STP260N4F7
Nchannel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code V
DS
R
DS(on)max
I
D
P
TOT
STP260N4F7 40 V 2.2 mΩ 120 A 235 W
Features
Among the lowest R
DS(on)
on the market
Excellent FoM (figure of merit)
Low C rss
/C iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
S(3)
Order code
STP260N4F7
AM01475v1_Tab
Table 1: Device summary
Marking Package
260N4F7 TO-220
Packaging
Tube
June 2016 DocID028290 Rev 2
This is information on a product in full production.
1/13 www.st.com
Contents
Contents
STP260N4F7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information data ............................................................... 9
4.1
TO-220 type A package information ................................................ 10
5 Revision history ............................................................................ 12
2/13 DocID028290 Rev 2
STP260N4F7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
T
J
T stg
Drain-source voltage
Gate source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Operating junction temperature range
Storage temperature range
Notes:
(1)
Current limited by package.
(2)
Pulse width limited by safe operating area.
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Electrical ratings
Value
40
±20
120
120
480
235
-55 to 175
Unit
V
V
A
A
A
W
°C
Value
0.64
62.5
Unit
°C/W
°C/W
DocID028290 Rev 2 3/13
Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol Parameter
Table 4: On /off states
Test conditions
V
(BR)DSS
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, V
DS
= 40 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 40 V,
T
C
= 125 °C (1)
V
I
GSS
GS(th)
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= 20 V
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static drain-source on-resistance V
GS
= 10 V, I
D
= 60 A
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DD
= 20 V, I
D
= 120 A,
V
GS
= 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Symbol Parameter t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
Table 6: Switching times
Test conditions
V
DD
= 20V, I
D
= 60 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times"
and
Figure 18: "Switching time waveform" )
STP260N4F7
Min. Typ. Max. Unit
40 V
1 µA
100 µA
100 nA
2
1.8
4 V
2.2 mΩ
Min. Typ. Max. Unit
-
-
5600
2400
35
-
- pF pF
-
-
-
67
31
-
-
- pF nC nC
-
Min. Typ. Max. Unit
-
-
30
21
-
- ns ns
- 42 - ns
-
9
13
-
- nC ns
4/13 DocID028290 Rev 2
STP260N4F7
Symbol Parameter
V
SD
(1)
Forward on voltage t rr
Reverse recovery time
Table 7: Source-drain diode
Test conditions
V
GS
= 0 V, I
SD
= 120 A
I
Q rr
RRM
Reverse recovery charge
Reverse recovery current
I
SD
= 120 A, di/dt = 100 A/µs
V
DD
= 32 V, T
J
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
68
- 98
2.9
1.1 V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID028290 Rev 2 5/13
Electrical characteristics
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area
STP260N4F7
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/13 DocID028290 Rev 2
STP260N4F7
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized on-resistance vs temperature
Figure 10: Normalized V
(BR)DSS
vs temperature Figure 11: Normalized gate threshold voltage vs temperature
Figure 12: Source-drain diode forward characteristics
DocID028290 Rev 2 7/13
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STP260N4F7
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
8/13 DocID028290 Rev 2
STP260N4F7
4
Package information data
Package information data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID028290 Rev 2 9/13
Package information data
4.1 TO-220 type A package information
Figure 19: TO-220 type A package outline
STP260N4F7
10/13 DocID028290 Rev 2
STP260N4F7
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Package information data
Table 8: TO-220 type A mechanical data mm
Min. Typ. Max.
4.40
0.61
1.14
0.48
15.25
1.27
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
DocID028290 Rev 2 11/13
Revision history
5
STP260N4F7
Revision history
Date Revision
Table 9: Document revision history
Changes
21-Sep-2015
16-Jun-2016
1
2
First release.
Modified: title anf features in cover page
Modified: Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" ,
Table 4: "On /off states" , Table 5: "Dynamic" , Table 6: "Switching times" and Table 7: "Source-drain diode"
Added: Section 5.1: "Electrical characteristics (curves)"
Minortext changes
12/13 DocID028290 Rev 2
STP260N4F7
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