STD10P10F6
Pchannel 100 V, 0.136 Ω typ., 10 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM11258v1
Features
Order code V
DSS
R
DS(on) max
STD10P10F6 100 V 0.18 Ω
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
I
D
10 A
Description
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting
Power MOSFET exhibits very low R
DS(on)
in all packages.
Table 1: Device summary
Order code Marking Package Packaging
STD10P10F6 10P10F6 DPAK Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
October 2014 DocID026365 Rev 2
This is information on a product in full production.
1/15 www.st.com
Contents
Contents
STD10P10F6
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Package mechanical data ............................................................... 8
3.1
DPAK (TO-252) type A mechanical data ........................................... 9
4 DPAK (TO-252) tape and reel mechanical data ........................... 12
5 Revision history ............................................................................ 14
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STD10P10F6
1
Electrical ratings
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
T j
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Storage temperature
Max. operating junction temperature
Value
100
± 20
10
7.5
40
40
-55 to 175
175
Notes:
(1)
Pulse width limited by safe operating area
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Value
3.75
50
Notes:
(1)
When mounted on 1 inch
2
FR-4, 2 Oz copper board
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
Unit
°C/W
°C/W
Unit
A
A
W
°C
V
V
A
°C
DocID026365 Rev 2 3/15
Electrical characteristics
2
STD10P10F6
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Symbol Parameter
Table 4: Static
Test conditions
V
(BR)DSS
Drain-source breakdown
Voltage
V
GS
= 0, I
D
= 250 µA
I
DSS
Symbol
Zero gate voltage drain current
Parameter
V
GS
= 0, V
DS
= 100 V
V
GS
= 0, V
DS
= 100 V, Tc =
125 °C
I
GSS
Gate body leakage current V
DS
= 0, V
GS
= ± 20 V
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source onresistance
V
GS
= 10 V, I
D
= 5 A
Table 5: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 80 V, f=1 MHz,
V
GS
= 0
V
DD
= 80 V, I
D
= 10 A
V
GS
= 10 V
Symbol t d(on) t r t d(off) t f
Min. Typ. Max. Unit
100
2
V
1 µA
10 µA
±100 nA
4 V
0.136 0.18
Ω
Min. Typ. Max. Unit
-
-
-
-
-
-
864
45
25
16.5
3.5
3.8
-
-
-
-
-
- pF pF pF nC nC nC
Table 6: Switching on/off (inductive load)
Parameter Test conditions Min. Typ. Max. Unit
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
R
DD
G
= 80 V, I
D
= 4.7 Ω, V
= 5 A,
GS
= 10 V
-
-
-
-
10.5
4.8
24
4.5
-
-
-
- ns ns ns ns
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
4/15 DocID026365 Rev 2
STD10P10F6
Symbol
V
SD
(1)
t rr
Q rr
I
RRM
Parameter
Table 7: Source drain diode
Test conditions
I
SD
= 5 A, V
GS
= 0 Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 10 A, di/dt = 100 A/µs,
V
DD
= 80 V
Electrical characteristics
Min. Typ. Max. Unit
-
-
-
-
26.5
36.5
2.7
1.1 V ns nC
A
Notes:
(1)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed.
DocID026365 Rev 2 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
GIPG021020141123FSR
I D
(A)
STD10P10F6
K
δ= 0.5
Figure 3: Thermal impedance
GIPG021020141545FSR
10 ar ea
is
D
S(o n)
O pe ra tio
Li m ite d n in
th is ax
R by m
100µs
1ms
1
10ms
Tj=175°C
Tc=25°C
Single pulse
0.1
0.1
1 10 V DS (V)
Figure 4: Output characteristics
0.2
10 -1
0.1
10 -2
10 -5
SINGLE PULSE
10 -4
0.05
0.02
0.01
10 -3 10 -2
Figure 5: Transfer characteristics tp(s)
6/15
Figure 6: Gate charge vs gate-source voltage
GIPG270520141105SA
V GS
(V)
V DD =80V
12
I D =10 A
10
8
6
4
2
0
0 5 10 15 20 Q g (nC)
Figure 7: Static drain-source on-resistance
GIPG270520141110SA
R DS(on)
(m Ω)
V GS =10V
135.5
135
134.5
134
133.5
133
1 2 3 4 5 I D (A)
DocID026365 Rev 2
STD10P10F6
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance
GIPG270520141149SA
R DS(on)
(norm)
2.5
V GS =10V
Figure 11: Normalized V(BR)DSS vs temperature
2
1.5
1
0.5
0
-75 -25 25 75 125 T
J
(°C)
Figure 12: Source-drain diode forward characteristics
DocID026365 Rev 2 7/15
Package mechanical data
3 Package mechanical data
STD10P10F6
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
8/15 DocID026365 Rev 2
STD10P10F6
3.1 DPAK (TO-252) type A mechanical data
Package mechanical data
Figure 13: DPAK (TO-252) type A drawings
DocID026365 Rev 2 9/15
Package mechanical data
Dim.
E1 e e1
H c2
D
D1
E
A
A1
A2 b b4 c
L
(L1)
L2
L4
R
V2
Table 8: DPAK (TO-252) type A mechanical data mm
Typ. Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
5.10
6.40
4.70
2.28
4.40
9.35
1.00
2.80
0.80
0.60
0.20
0°
STD10P10F6
4.60
10.10
1.50
1.00
8°
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
10/15 DocID026365 Rev 2
STD10P10F6 Package mechanical data
Figure 14: DPAK (TO-252) type A footprint
All dimensions are in mm
DocID026365 Rev 2 11/15
DPAK ( TO-252) tape and reel mechanical data
4
STD10P10F6
DPAK (TO-252) tape and reel mechanical data
Figure 15: Tape for DPAK (TO-252)
12/15 DocID026365 Rev 2
STD10P10F6 DPAK ( TO-252) tape and reel mechanical data
Figure 16: Reel for DPAK (TO-252)
Dim.
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
F
K0
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
Table 9: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min. Max. Min.
6.8
10.4
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
D
G
N
T
A
B
C
Base qty.
Bulk qty.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID026365 Rev 2 13/15
Revision history
5
STD10P10F6
Revision history
Date Revision
Table 10: Document revision history
Changes
20-May-2014
02-Oct-2014
1
2
First release.
Document status promoted from preliminary to production data
Added Section 2.1: "Electrical characteristics (curves)" .
14/15 DocID026365 Rev 2
STD10P10F6
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