STD29NF06L
Nchannel 60 V, 0.022 Ω typ., 35 A STripFET™ II
Power MOSFET in a DPAK package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
G(1)
D(2, TAB)
Order code
STD29NF06L
S(3)
Features
Order code V
DS
R
DS(on)
max.
STD29NF06L 60 V
Low threshold drive
100% avalanche tested
Low gate charge
0.028 Ω
I
D
35 A
Applications
Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process is specifically designed to minimize input capacitance and gate charge. It is therefore ideal as a primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any application with low gate charge drive requirements.
AM01475v1_noZen
Table 1: Device summary
Marking Package
D29NF06L DPAK
Packing
Tape and reel
February 2017 DocID030329 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/15 www.st.com
Contents
Contents
STD29NF06L
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
DPAK (TO-252) type C package information .................................... 9
DPAK (TO-252) packing information ............................................... 12
5 Revision history ............................................................................ 14
2/15 DocID030329 Rev 1
STD29NF06L
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
DS
V
GS
V
DGR
I
D
I
DM
(1)
P
TOT
dv/dt (2)
T stg
T j
Drain-source voltage
Gate-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed)
Total dissipation at T case
= 25 °C
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
I
SD
≤ 35 A, di/dt ≤ 400 A/μs, V
DS(peak)
≤ V
(BR)DSS
Symbol
Table 3: Thermal data
Parameter
R thj-case
R
thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Notes:
(1)
When mounted on a 1-inch² FR-4, 2 Oz copper board.
Symbol
Table 4: Avalanche characteristics
Parameter
I
AR
E
AS
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax.
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Electrical ratings
Value
60
±20
60
35
25
140
70
25
-55 to 175
Unit
V
V
V
A
A
W
V/ns
°C
Value
2.14
50
Value
35
150
Unit
°C/W
Unit
A mJ
DocID030329 Rev 1 3/15
Electrical characteristics
2
STD29NF06L
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Symbol Parameter
Table 5: On/off-state
Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 250 µA 60 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 60 V
V
GS
= 0 V, V
DS
= 60 V,
T case
= 125 °C (1)
1
10
µA
I
GSS
Gate-body leakage current
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 18 A
V
GS
= 5 V, I
D
= 18 A
1
±100 nA
1.7 2.5
0.022 0.028
V
Ω
0.025 0.030
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 25 V, f = 1 MHz, V
GS
= 0 V
V
DD
= 48 V, I
D
= 35 A,
V
GS
= 0 to 5 V (see Figure 15:
"Test circuit for inductive load switching and diode recovery times" )
Min. Typ. Max. Unit
-
-
1600
215 pF
- 60
-
-
23
7
31 nC
- 10
Symbol Parameter
Table 7: Switching times
Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= 30 V, I
D
= 18 A,
R
G
= 4.7
Ω, V
GS
= 4.5 V (see
Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
-
-
-
-
30
105
65
25
-
-
-
- ns
4/15 DocID030329 Rev 1
STD29NF06L
Symbol Parameter
I
I t
SD
SDM
V
I
SD
Q rr rr
RRM
(1)
(2)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 8: Source-drain diode
Test conditions
V
GS
= 0 V, I
SD
= 35 A
I
SD
= 35 A, di/dt = 100 A/µs, V
DD
= 15 V,
T
J
= 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 35 A
-
-
-
-
-
70
140
4
140
1.5
A
V ns nC
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID030329 Rev 1 5/15
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STD29NF06L
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
6/15 DocID030329 Rev 1
STD29NF06L
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
DocID030329 Rev 1 7/15
Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STD29NF06L
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform
Figure 18: Switching time waveform
8/15 DocID030329 Rev 1
STD29NF06L
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DPAK (TO-252) type C package information
Figure 19: DPAK (TO-252) type C package outline
DocID030329 Rev 1
0068772_C_21
9/15
Package information
Dim.
D1
E
E1 e
H
L
L1
L2
L3
L4
L6
θ1
θ2
V2 b4 c c2
D
A
A1
A2 b
Table 9: DPAK (TO-252) type C mechanical data mm
Min. Typ.
5.25
6.50
4.70
2.186
9.80
1.40
2.20
0.90
0.00
0.72
5.13
0.47
0.47
6.00
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
STD29NF06L
1.25
1.00
9°
9°
8°
Max.
2.38
1.10
0.10
0.85
5.46
0.60
0.60
6.20
6.70
2.386
10.40
1.70
10/15 DocID030329 Rev 1
STD29NF06L Package information
Figure 20: DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_21
DocID030329 Rev 1 11/15
Package information
4.2 DPAK (TO-252) packing information
Figure 21: DPAK (TO-252) tape outline
STD29NF06L
12/15 DocID030329 Rev 1
STD29NF06L
Figure 22: DPAK (TO-252) reel outline
Package information
Dim.
F
K0
P0
P1
P2
R
T
W
A0
B0
B1
D
D1
E
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
2.55
3.9
Table 10: DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
1.85
7.6
2.75
4.1
8.1
2.1
A
B
C
D
G
N
T
Base qty.
Bulk qty.
Min.
1.5
12.8
20.2
16.4
50
0.35
16.3 mm
Max.
330
13.2
18.4
22.4
2500
2500
DocID030329 Rev 1 13/15
Revision history
5
STD29NF06L
Revision history
Date
13-Feb-2017
Table 11: Document revision history
Revision
1
Changes
First release.
14/15 DocID030329 Rev 1
STD29NF06L
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