STPSC8065
Features
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
Operating T j
from -40 °C to 175 °C
ECOPACK®2 compliant component
650 V power Schottky silicon carbide diode
Datasheet - production data
Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Table 1: Device summary
Symbol Value
I
F(AV)
V
RRM
T j
(max.)
V
F
(typ.)
8 A
650 V
175 °C
1.30 V
Ju ly
2017 DocID030730 Rev 2
This is information on a product in full production.
1/9 www.st.com
Characteristics
1 Characteristics
STPSC8065
Symbol
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Parameter Value
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
Forward rms current
I
F(AV)
Average forward current T
C
= 150 °C (1) , DC current
650
22
8
I
FRM
Repetitive peak forward current
T c
= 150 °C, T j
= 175 °C, δ = 0.1
36
I
FSM
T
T stg j t p
= 10 ms sinusoidal, T c
= 25 °C
Surge non repetitive forward current
Storage temperature range
Operating junction temperature (2)
t p
= 10 ms sinusoidal, T c
= 125 °C t p
= 10 µs square, T c
= 25 °C
46
38
200
Unit
V
A
A
A
A
-65 to +175 °C
-40 to +175 °C
Notes:
(1)
Value based on R th(j-c)
max.
(2)
(dP tot
/dT j
) < (1/R th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol Parameter
Value
Typ. Max.
Unit
R th(j-c)
Junction to case 1.1 1.65 °C/W
Symbol
I
R
(1)
V
F
(2)
Table 4: Static electrical characteristics
Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage current
Forward voltage drop
T j
= 25 °C
T j
= 150 °C
T j
= 25 °C
T j
= 150 °C
T j
= 175 °C
I
V
F
R
= V
RRM
= 8 A
-
-
-
-
-
2
20
1.50
105
750
1.30 1.45
1.45 1.65
µA
V
Notes:
(1)
Pulse test: t p
= 5 ms, δ < 2%
(2)
Pulse test: t p
= 500 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.95 x I
F(AV)
+ 0.087 x I
F
2
(RMS)
2/9 DocID030730 Rev 2
STPSC8065
Symbol
Q
Cj
(1)
C j
Table 5: Dynamic electrical characteristics
Parameter Test conditions
Total capacitive charge
Total capacitance
V
R
= 400 V
V
R
= 0 V, T c
= 25 °C, F = 1 MHz
V
R
= 400 V, T c
= 25 °C, F = 1 MHz
Notes:
(1)
Most accurate value for the capacitive charge: 𝑄 𝑐𝑗
= ∫
0
𝑉
𝑂𝑈𝑇 𝐶
𝐽
(𝑉
𝑅
) • 𝑑𝑉
𝑅
Characteristics
Typ. Unit
28
540
45 nC pF
DocID030730 Rev 2 3/9
Characteristics
1.1 Characteristics (curves)
Figure 1: Forward voltage drop versus forward current (typical values)
STPSC8065
Figure 2: Reverse leakage current versus reverse voltage applied (typical values)
12
10
8
6
4
16
I
F
(A)
Pulse test : t p
=500µs
14
T a
=25 °C
T a
=100 °C
T a
=150 °C
T a
=175 °C
1.E+02
I
R
(µA)
1.E+01
1.E+00
1.E-01
T j
=150 °C
T j
=175 °C
1.E-02 T j
=25 °C
80
60
2
V
F
(V)
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
Figure 3: Peak forward current versus case temperature
I
M
(A)
δ = 0.1
δ=tp/T
T tp
V
R
(V)
1.E-03
0 50 100 150 200 250 300 350 400 450 500 550 600 650
600
Figure 4: Junction capacitance versus reverse voltage applied (typical values)
Cj(pF)
500
F=1 MHz
V
OSC
=30 mV
RMS
T j
=25 °C
400
40
δ = 0.3
δ = 0.5
300
200
20
δ = 1 δ = 0.7
100
V
R
(V)
0
0 25 50 75
T
C
(°C)
100 125 150 175
0
0.1
1.0
10.0
100.0
1000.0
Figure 5: Relative variation of thermal impedance junction to case versus pulse duration
Figure 6: Non-repetitive peak surge forward current versus pulse duration
(sinusoidal waveform)
Zth(j-c) /Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-05
Single pulse
1.E-04 1.E-03 1.E-02 1.E-01 t p
(s)
1.E+00
1.E+03
I
FSM
(A)
1.E+02
1.E+01
1.E-05
T a
=25 °C
T a
=125 °C
1.E-04 1.E-03 t p
(s)
1.E-02
4/9 DocID030730 Rev 2
STPSC8065 Characteristics
Figure 7: Total capacitive charges versus reverse voltage applied (typical values)
DocID030730 Rev 2 5/9
Package information
2
2.1
Package information
STPSC8065
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 N·m
Maximum torque value: 0.7 N·m
TO-220AC package information
Figure 8: TO-220AC package outline
6/9 DocID030730 Rev 2
STPSC8065
Ref.
L7
L9
M
ØI
L2
L4
L5
L6
F
F1
G
H2
A
C
D
E
Package information
Table 6: TO-220AC package mechanical data
Dimensions
Millimeters
Min.
4.40
1.23
2.40
0.49
0.61
1.14
4.95
10.00
Max.
4.60
1.32
2.72
0.70
0.88
1.70
5.15
10.40
Min.
0.173
0.048
0.094
0.019
0.024
0.044
0.194
0.393
Inches
Max.
0.181
0.051
0.107
0.027
0.034
0.066
0.202
0.409
16.40 typ. 0.645 typ.
13.00
2.65
15.25
6.20
3.50
14.00
2.95
15.75
6.60
3.93
0.511
0.104
0.600
0.244
0.137
0.551
0.116
0.620
0.259
0.154
2.6 typ. 0.102 typ.
3.75 3.85 0.147 0.151
DocID030730 Rev 2 7/9
Ordering information
3 Ordering information
Order code
STPSC8065D
Marking
PSC8065D
Table 7: Ordering information
Package Weight Base qty.
TO-220AC 1.86 g 50
STPSC8065
Delivery mode
Tube
4 Revision history
Date Revision
Table 8: Document revision history
Changes
13-Jun-2017
1
8-Ju l
-2017
1
2
First issue.
Updated Table 4: "Static electrical characteristics"
8/9 DocID030730 Rev 2
STPSC8065
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DocID030730 Rev 2 9/9
