®
BUXD87
HIGH VOLTAGE NPN POWER TRANSISTOR
■
■
■
■
■
REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAGE
HIGH VOLTAGE CAPABILITY
HIGH DC CURRENT GAIN
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
GENERAL PURPOSE SWITCHING
DESCRIPTION
The BUXD87 is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
1
2
3
1
3
IPAK DPAK
TO-251 TO-252
(Suffix "-1") (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5 ms)
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T c
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
April 1999
Value
1000
450
5
0.5
1
0.3
0.6
20
-65 to 150
150
A
A
A
A
Unit
V
V
V
W o
C o
C
1/6
BUXD87
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
100
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
BEO
Collector-Base
Sustaining Voltage
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
I
I
V
CE
= 1000 V
V
CE
= 1000 V T j
= 125 o
C
V
EB
= 5 V
C
C
= 100 mA
= 10 mA
C
= 0.1 A I
C
= 0.2 A I
C
= 0.2 A I
B
B
B
= 0.01 A
= 0.02 A
= 0.02 A
I
C
= 50 mA V
CE
= 5 V
I
C
= 40 mA V
CE
= 5 V f
T
Transition Frequency I
C
= 50 mA V
CE
= 10 V f=1MHz
RESISTIVE LOAD V
CC
= 250 V I
C
= 200 mA t t s f
Storage Time
Fall Time
I
B1
= 40 mA I t p
= 20
µ s
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
B2
= -80 mA
450
5
12
Typ.
50
20
4.5
0.5
o
C/W o
C/W
Max.
100
1
1
Unit
µ
A mA mA
0.8
1
1
V
V
V
V
V
MHz
µ s
µ s
Safe Operating Area Derating Curves
2/6
DC Current Gain DC Current Gain
BUXD87
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Reverse Biased SOA
3/6
BUXD87
DIM.
G
H
L
C
C2
D
E
L1
L2
V1
B
B2
B3
B5
B6
A
A1
A3
MIN.
2.20
0.90
0.70
0.64
5.20
0.45
0.48
6.00
6.40
4.40
15.90
9.00
0.80
TO-251 (IPAK) MECHANICAL DATA mm
TYP.
0.30
0.80
10 o
4.60
16.30
9.40
1.20
1.00
0.95
0.60
0.60
6.20
6.60
MAX.
2.40
1.10
1.30
0.90
5.40
0.85
0.018
0.019
0.237
0.252
0.173
0.626
0.354
0.031
MIN.
0.087
0.035
0.028
0.025
0.204
inch
TYP.
0.012
0.031
10 o
0.037
0.024
0.024
0.244
0.260
0.181
0.642
0.370
0.047
0.039
MAX.
0.094
0.043
0.051
0.035
0.213
0.033
P032N_E
4/6
DIM.
L2
L4
V2
E
G
H
B
B2
C
C2
D
A
A1
A2
BUXD87
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
MIN.
2.20
0.90
0.03
0.60
0 o
TO-252 (DPAK) MECHANICAL DATA
mm
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.8
1.00
8 o
0.024
0 o inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
0.039
0 o
P032P_B
5/6
BUXD87
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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