STMicroelectronics High voltage fast-switching NPN power transistor Datasheet
STMicroelectronics HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR is a reliable and efficient solution for various applications. Its key features include:
- High switching speeds and medium voltage capability, making it suitable for compact fluorescent lamp applications.
- Cellular Emitter structure with planar edge termination for enhanced switching speeds and wide RBSOA.
- Low spread of dynamic parameters and minimum lot-to-lot spread for consistent performance.
- Robust design with a maximum operating junction temperature of 150°C for increased reliability.
जाहिरात
जाहिरात
®
STBV68
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
MEDIUM VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The STBV68 is designed for use in compact fluorescent lamp application.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
600 V V
CES
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0) 400 V V
CEO
V
EBO
I
C
C
= 0) Emitter-Base Voltage (I
Collector Current
9
0.6
V
A
I
CM
Collector Peak Current (t p
< 5 ms) 1.2
A
I
B
I
BM
P tot
T stg
T j
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T amb
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
0.3
0.6
0.9
-65 to 150
150
A
A
W o
C o
C
1/4 September 2000
STBV68
THERMAL DATA
R thj-amb
Thermal Resistance Junction-ambient Max 140
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CEV
Collector Cut-off
Current (V
BE
= -1.5 V)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
V
V
C
CE
BE
= 600 V
= 9 V
= 1 mA L = 25mH
V
BE(sat)
∗
Base-Emitter
Saturation Voltage h
FE
∗
DC Current Gain
I
I
I
C
= 0.1 A I
B
= 20 mA
I
C
= 0.15 A I
B
= 50 mA
I
C
= 0.25 A I
B
= 100 mA
C
= 0.1 A I
C
= 0.15 A I
B
B
= 20 mA
= 50 mA
I
C
= 0.1 A V
CE
= 5 V
I
C
= 0.25 A V
CE
= 10 V t f
INDUCTIVE LOAD
Fall Time I
I
C
= 0.1 A V cla mp
= 300 V
B1
= - I
∗
Pulsed: Pulse duration = 300
µ s, duty cycle = 1.5 %
B2
= 20 mA L =3 mH
400
7
3
Typ.
0.35
0.8
3.0
0.3
Max.
250
Unit
µ
A
1
0.75
1.5
5
1.0
1.2
15
6 o
C/W mA
V
V
V
V
V
V
µ s
Obsolete Product(s) - Obsolete Product(s)
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DIM.
F
G
D
E
A
B
C
STBV68
TO-92 MECHANICAL DATA
MIN.
4.58
4.45
3.2
mm
TYP.
MAX.
5.33
5.2
4.2
12.7 0.500
1.27
MIN.
0.180
0.175
0.126
0.4
0.35
0.51
0.016
0.14
inch
TYP.
0.050
MAX.
0.210
0.204
0.165
0.020
Obsolete Product(s) - Obsolete Product(s)
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STBV68
Obsolete Product(s) - Obsolete Product(s) of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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