ST13003N
High voltage fast-switching NPN power transistor
Features
■
■
■
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Application
■ Compact fluorescent lamps (CFLs)
Description
The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
SOT-32
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
ST1 3 00 3 N
Marking
1 3 00 3 N
February 2010 Doc ID 15759 Rev 2
Package
SOT3 2
Packaging
BAG
1/9 www.st.com
9
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Collector-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 5 ms)
Total dissipation at T c
= 25 °C
Storage temperature
Max. operating junction temperature
Table 3.
Symbol
R thJC
Thermal data
Parameter
Thermal resistance junction-case
ST13003N
Value
700
400
9
1
2
0.5
1
20
-55 to 150
150
Unit
A
A
A
A
W
V
V
V
°C
Value
6.25
Unit
°C/W
2/9 Doc ID 15759 Rev 2
ST13003N Electrical characteristics
T case
= 25 °C; unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter Test conditions
V
I
I
CES
EBO
CEO(sus)
(1)
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
Collector-emitter sustaining voltage (I
B
= 0)
V
CE(sat)
(1)
Collector-emitter saturation voltage
I
V
V
V
CE
CE
EB
C
= 700 V
= 700 V T
= 9 V
= 10 mA
C
= 125 °C
V
BE(sat)
(1)
Base-emitter saturation voltage
I
C
= 0.5 A I
B
= 125 mA
I
C
= 1 A I
B
= 33 0 mA
I
C
= 0.5 A I
B
= 125 mA
I
C
= 1 A I
B
= 33 0 mA h
FE
DC current gain
I
C
= 0.5 A, V
CE
= 2 V
I
C
= 1 A V
CE
= 10 V t s t f
Inductive Load
Storage time
Fall time
I
C
= 0.4 A _ V clamp
= 3 00 V
I
B(on)
V
1.
Pulse test: pulse duration
≤
3 00 µs, duty cycle
≤
2 %
= -I
B(off)
BB(off)
= - 5 V
= 80 mA
Figure 8
Min.
Typ. Max. Unit
1
5 mA mA
400
6
5
2.5
180
1
0.7
1.2
1.2
1.
3
18
15 mA
V
V
V
V
V
µs ns
Figure 2.
Derating curve Figure 3.
DC current gain (V
CE
= 3 V)
Doc ID 15759 Rev 2 3 /9
Electrical characteristics ST13003N
Figure 4.
DC current gain (V
CE
= 5 V) Figure 5.
Collector-emitter saturation voltage
Figure 6.
Base-emitter saturation voltage
Figure 7.
Switching time inductive load
4/9 Doc ID 15759 Rev 2
ST13003N
Figure 8.
Inductive load switching test circuit
Electrical characteristics
1.
Fast electronic switch
2.
Non-inductive resistor
3 .
Fast recovery rectifier
Doc ID 15759 Rev 2 5/9
Package mechanical data
3 Package mechanical data
ST13003N
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
6/9 Doc ID 15759 Rev 2
ST13003N Package mechanical data
Doc ID 15759 Rev 2 7/9
Revision history
Table 5.
Date
26-May-2009
25-Feb-2010
Document revision history
Revision
1
2
First release.
Updated
Figure 1 on page 1 .
Changes
ST13003N
8/9 Doc ID 15759 Rev 2
ST13003N
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