STGIPS14K60T-H Electrical characteristics
Symbol
Table 8. Low voltage power supply (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min.
Typ.
Max.
Unit
V cc_hys
V cc_thON
V cc_thOFF
V cc
UV hysteresis
V cc
UV turn ON threshold
V cc
UV turn OFF threshold
1.2
11.5
10
1.5
12
10.5
1.8
12.5
11
V
V
V
I qccu
I qcc
Undervoltage quiescent supply current
Quiescent current
V
CC
= 10 V
SD = 5 V; LIN = 0 V;
H
IN
= 0
V cc
= 15 V
SD = 5 V; LIN = 0 V
H
IN
= 0
450
3.5
µA mA
Symbol
I
LINh
I
LINl
I
SDh
I
SDl
Dt
V il
V ih
I
HINh
I
HINl
Symbol
Table 9. Bootstrapped voltage (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions
V
BS_hys
V
BS
UV hysteresis
V
BS_thON
V
BS
UV turn ON threshold
V
BS_thOFF
V
BS
UV turn OFF threshold
I
R
I
QBSU
QBS
DS(on)
Undervoltage V current
BS
quiescent
V
BS
= 9 V
SD = 5 V; LIN = 0
HIN = 5 V
V
BS
quiescent current
V
BS
= 15 V
SD = 5 V; LIN = 0
HIN = 5 V
Bootstrap driver on resistance LVG ON
Min.
1.2
11.1
9.8
Typ.
1.5
11.5
10
70
200
120
Max.
1.8
12.1
10.6
110
300
Table 10. Logic inputs (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min.
Typ.
Low logic level voltage
High logic level voltage
HIN logic “1” input bias current HIN = 15 V
HIN logic “0” input bias current HIN = 0 V
LIN logic “1” input bias current LIN = 15 V
LIN logic “0” input bias current LIN = 0 V
SD logic “0” input bias current SD = 15 V
SD logic “1” input bias current SD = 0 V
Dead time
see Figure 9
0.8
1.9
20
20
30
40
40
120
600
Max.
1.1
2.25
100
1
100
1
300
3
Unit
V
V
V
µA
µA
Ω
Unit
V
V
µA
µA
µA
µA
µA
µA ns
DocID024476 Rev 3 9/19
19
Electrical characteristics STGIPS14K60T-H
Symbol
Table 11. Shut down characteristics (V
CC
= 15 V unless otherwise specified)
Parameter Test conditions Min.
Typ.
Max.
t sd
Shut down to high / low side driver propagation delay
V
OUT
= 0, V boot
= V
CC
,
V
IN
= 0 to 3.3 V
50 125 200
Unit ns
Condition
Shutdown enable half-bridge tri-state
Interlocking half-bridge tri-state
0 ‘’logic state” half-bridge tri-state
1 “logic state” low side direct driving
1 “logic state” high side direct driving
H
H
SD
L
H
H
Table 12. Truth table
Logic input (V
I
)
LIN HIN
X X
H
L
H
L
L
H
H
L
LVG
L
L
L
H
L
Output
Note: X: don’t care
Figure 5. Maximum I
C(RMS)
current vs. switching frequency
(1)
I c(RMS) [A] AM03801v2
V
PN
= 300 V, Modulation index = 0.8,
PF = 0.6, T j
= 150 °C, f
SINE
= 60 Hz
18
Figure 6. Maximum I
C(RMS)
current vs. f
SINE
(1)
I c(RMS)
[A]
11
V
PN
= 300 V, Modulation index = 0.8,
PF = 0.6, T j
= 150 °C, T c
= 100 °C
AM03802v2
16 10
T
C
= 80°C
14 9
12
T
C
= 100°C
8
7 10
8
4 6 8 10 12 14 16 18 f sw
[kHz]
1.
Simulated curves refer to typical IGBT parameters and maximum R thJC
.
6
1 fsw = 12 kHz fsw = 16 kHz fsw = 20 kHz
10 f
SINE
[Hz]
HVG
L
L
L
L
H
10/19 DocID024476 Rev 3
