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SD4931
M174
Epoxy sealed
HF/VHF/UHF RF power N-channel MOSFET
Datasheet
-
production data
Features
• Improved ruggedness V
(BR)DSS
> 200 V
• Excellent thermal stability
• 20:1 all phases load mismatch capability
• P
OUT
= 150 W min. with 14.8 dB gain @
175 MHz
• In compliance with the 2002/95/EC European directive
Figure 1. Pin connection
4 1
Description
The SD4931 is an N-channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 250 MHz.
1. Drain
2. Source
3 2
3. Gate
4. Source
Order code
SD4931
Marking
SD4931
(1)
Table 1. Device summary
Base qty.
25 pcs
Package
M174
1. For more details please refer to
Chapter 5: Marking, packing and shipping specifications
.
Packaging
(1)
Plastic tray
June 2013
This is information on a product in full production.
DocID15486 Rev 4 1/13 www.st.com
5
6
3
4
Contents
Contents
1
2
SD4931
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Marking, packing and shipping specifications . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 DocID15486 Rev 4
SD4931 Electrical data
Symbol
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
J
T
STG
Table 2. Absolute maximum ratings (T
CASE
= 25 °C)
Parameter Value
Drain source voltage
Drain-gate voltage (R
GS
= 1 M Ω )
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
200
200
±20
20
389
200
-65 to +150
Unit
A
W
° C
° C
V
V
V
Symbol
R thJC
Table 3. Thermal data
Parameter
Junction - case thermal resistance
Value
0.45
Unit
° C/W
DocID15486 Rev 4 3/13
13
Electrical characteristics SD4931
T
CASE
= +25 °C
2.1 Static
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON)
G
FS
C
ISS
C
OSS
CRSS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
GS
= 10 V
V
DS
= 10 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
Table 4. Static
Test conditions
I
DS
= 100 mA
V
DS
= 100 V
V
DS
= 0 V
I
D
= 250 mA
I
D
= 10 A
I
D
= 2.5 A
V
DS
= 50 V
V
DS
= 50 V
V
DS
= 50 V f = 1 MHz f = 1 MHz f = 1 MHz
Min Typ Max Unit
200
1.5
2.5
2.5
3.5
4.0
500
200
8
1
250
4.0
5.0
V
S pF pF pF
V mA nA
V
2.2 Dynamic
Symbol
P
1dB
G
PS n
D
Load mismatch
Table 5. Dynamic
Test conditions Min Typ Max Unit
V
DD
= 50 V I
DQ
= 250 mA f = 175 MHz 150
V
DD
= 50 V I
DQ
= 250 mA P
OUT =
150 W f = 175 MHz 13
175
14.8
V
DD
= 50 V I
DQ
= 250 mA P
OUT
= 150 W f = 175 MHz 50
V
DD
= 50 V I
DQ
= 250 mA P
OUT =
150 W f = 175 MHz
All phase angles
10:1
56
20:1
W dB
%
VSWR
4/13 DocID15486 Rev 4
SD4931
Figure 2. Transient thermal impedance
6LQJOHĆĆUHSHWLWLYHĆSXOVH
Typical performance
VLQJOHĆSXOVH
( ( ( ( (
5HFWDQJXODUĆSRZHUĆSXOVHĆZLGWKĆVHF
(
$09
DocID15486 Rev 4 5/13
13
Typical performance SD4931
Figure 3. Transient thermal impedance model
'LVVLSDWHGĆ3RZHUĆ:DWWV
5
5 Ć2KP
&
&
& Ć)
5
5
5 Ć2KP
&
&
& Ć)
5
5
5 Ć2KP
&
&
& Ć)
5
5
5 Ć2KP
&
&
& Ć)
$09
6/13 DocID15486 Rev 4
SD4931 Typical performance
Figure 4. Power gain and efficiency vs output power_Vdd = 50 V, Idq = 250 mA,
Freq = 175 MHz
Marking
L
M
J
K
H
I
F
G
P
Q
N
O
D
E
B
C
DD
EE
FF
A
Table 6. Vgs sort (@250 mA)
Min.
2.7
2.8
2.9
3
2.3
2.4
2.5
2.6
3.1
3.2
3.3
3.4
1.9
2
2.1
2.2
1.5
1.6
1.7
1.8
DocID15486 Rev 4
Max.
2.8
2.9
3
3.1
2.4
2.5
2.6
2.7
3.2
3.3
3.4
3.5
2
2.1
2.2
2.3
1.6
1.7
1.8
1.9
7/13
13
Typical performance
Marking
T
U
R
S
V
Table 6. Vgs sort (@250 mA) (continued)
Min.
3.5
3.6
3.7
3.8
3.9
Max.
3.6
3.7
3.8
3.9
4
SD4931
8/13 DocID15486 Rev 4
SD4931
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK is an ST trademark.
Dim.
H
I
J
K
L
M
A
B
C
D
E
F
G
Table 7. M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data mm.
Inch
Min
5.56
Typ Max
5.584
Min
0.219
Typ
3.18
0.125
6.22
18.28
6.48
18.54
0.245
0.720
3.18
0.125
24.64
12.57
0.08
2.11
3.81
25.53
3.05
24.89
12.83
0.18
3.00
4.45
7.11
26.67
3.30
0.970
0.495
0.003
0.083
0.150
1.005
0.120
Max
0.230
0.255
0.730
0.980
0.505
0.007
0.118
0.175
0.280
1.050
0.130
DocID15486 Rev 4 9/13
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Package mechanical data
Figure 5. Package dimensions
SD4931
Controlling Dimension: Inches
1011000D
10/13 DocID15486 Rev 4
SD4931
5
Marking, packing and shipping specifications
Marking, packing and shipping specifications
Order code
SD4931
Table 8. Packing and shipping specifications
Packaging
Pcs per tray
Dry pack humidity
V GS sort
Plastic tray 25 < 10% Not mixed
Lot code
Not mixed
Figure 6. Marking layout
Table 9. Marking specifications
Symbol Description
X V
GS sort xxx Last 3 digits of diffusion lot
MAR
CZ
Country of origin
Test and finishing plant
DocID15486 Rev 4 11/13
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Revision history SD4931
Date
17-Mar-2008
14-Jan-2010
23-May-2011
10-Jun-2013
Revision
Table 10. Document revision history
Changes
1
2
3
4
Initial release.
Updated test conditions in
.
Inserted Figure 2: Transient thermal impedance ,
Figure 3: Transient thermal impedance model
and Section 5: Marking, packing and shipping specifications .
– Modified document title to “HF/VHF/UHF RF power N-channel
MOSFET”
– Corrected error in V
GS(Q)
symbol and test conditions in
– Minor text edits.
12/13 DocID15486 Rev 4
SD4931
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