®
L6386
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY +- 50 V/nsec iN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
UNDER VOLTAGE LOCK OUT ON LOWER
AND UPPER DRIVING SECTION
INTEGRATED BOOTSTRAP DIODE
OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6386 is an high-voltage device, manufactured with the BCD "OFF-LINE" technology. It has a Driver structure that enables to drive inde-
BLOCK DIAGRAM
SO14 DIP14
ORDERING NUMBERS:
L6386D L6386 pendent referenced Channel Power MOS or
IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
V
CC
4
UV
DETECTION
HIN
SD
SGND
3
2
1
7
BOOTSTRAP DRIVER
LOGIC
UV
DETECTION
LEVEL
SHIFTER
VREF
-
+
R
R
S
Vboot
14
LVG
DRIVER
V
CC
HVG
DRIVER
13
HVG
OUT
12
LVG
9
PGND
8
H.V.
DIAG
5
C
BOOT
TO LOAD
6 CIN
D97IN520D
July 1999
1/10
L6386
ABSOLUTE MAXIMUM RATINGS
Symbol
Vout
Vcc
Vboot
Vhvg
Vlvg
Vi
Vdiag
Vcin dVout/dt
Ptot
Tj
Ts
Parameter
Output Voltage
Supply Voltage
Floating Supply Voltage
Upper Gate Output Voltage
Lower Gate Output Voltage
Logic Input Voltage
Open Drain Forced Voltage
Comparator Input Voltage
Allowed Output Slew Rate
Total Power Dissipation (Tj = 85 °C)
Junction Temperature
Storage Temperature
Note: ESD immunity for pins 12, 13 and 14 is guaranteed up to 900V (Human Body Model)
PIN CONNECTION
Value
-3 to Vboot - 18
- 0.3 to +18
-1 to 618
- 1 to Vboot
-0.3 to Vcc +0.3
-0.3 to Vcc +0.3
-0.3 to Vcc +0.3
-0.3 to Vcc +0.3
50
750
150
-50 to 150
LIN
SD
HIN
V
CC
DIAG
CIN
SGND
5
6
7
1
2
3
4
D97IN521A
11
10
9
8
14
13
12
V boot
HVG
OUT
N.C.
N.C.
LVG
PGND
THERMAL DATA
Symbol
R th j-amb
Parameter
Thermal Resistance Junction to Ambient
PIN DESCRIPTION
SO14
165
DIP14
100
Unit
°C/W
3
4
5
6
N.
1
2
8
9
10, 11
12
13
14
Name
LIN
SD (*)
HIN
VCC
DIAG
CIN
SGND
PGND
LVG (*)
N.C.
OUT
HVG (*)
Vboot
Type
I
I
I
I
O
I
O
O
O
Lower Driver Logic Input
Shut Down Logic Input
Upper Driver Logic Input
Low Voltage Supply
Open Drain Diagnostic Output
Comparator Input
Ground
Power Ground
Low Side Driver Output
Not Connected
Upper Driver Floating Driver
High Side Driver Output
Bootstrapped Supply Voltage
Function
(*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA), with VCC >3V. This allows to omit the "bleeder" resistor connected
between the gate and the source of the external MOSFET normally used to hold the pin low; the gate driver assures low impedance also
in SD condition.
2/10
V
V
V
V/ns mW
°C
°C
Unit
V
V
V
V
V
L6386
RECOMMENDED OPERATING CONDITIONS
Symbol Pin
Vout 12
14 Vboot-
Vout fsw
Vcc
T j
4
Parameter
Output Voltage
Floating Supply Voltage
Switching Frequency
Supply Voltage
Junction Temperature
Test Condition
HVG,LVG load CL = 1nF
Note 1: if the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
ELECTRICAL CHARACTERISTICS
AC Operation (Vcc = 15V; Tj = 25°C)
Symbol ton toff tsd tr tf
Pin
1.3
vs 9,
13
2 vs
9,13
Parameter
High/Low Side Driver Turn-On
Propagation Delay
High/Low Side Driver Turn-Off
Propagation Delay
Shut Down to High/Low Side
Propagation Delay
13,9 Rise Time
13,9 Fall Time
DC Operation (Vcc = 15V; Tj = 25°C)
Test Condition
Vout = 0V
Vout = 0V
Vout = 0V
CL = 1000pF
CL = 1000pF
Min.
Note1
Note1
-45
Min.
Typ.
Typ.
110
105
105
50
30
Max.
580
17
400
17
125
Max.
150
150
150
Unit
V
V kHz
V
°C
Unit ns ns ns ns ns
Symbol Pin
Low Supply Voltage Section
Parameter
Vcc
Vccth1
4 Supply Voltage
Vcc UV Turn On Threshold
Vccth2
Vcchys
Iqccu
Iqcc
Test Condition
Vcc UV Turn Off Threshold
Vcc UV Hysteresis
Undervoltage Quiescent Supply Current Vcc
≤
11V
Quiescent Current Vcc = 15V
Bootstrapped Supply Section
Vboot 14 Bootstrapped Supply Voltage
Vbth1
Vbth2
Vboot UV Turn On Threshold
Vboot UV Turn Off Threshold
Vbhys
Iqboot
Ilk
Rdson
Vboot UV Hysteresis
Vboot Quiescent Current
Leakage Current
Bootstrap Driver on Resistance (*)
Driving Buffers Section
Iso 9, 13 High/Low Side Driver Short Circuit
Source Current
Vout = Vboot
Vout = Vboot = 600V
Vcc
≥
12.5V; Vin = 0V
VIN = Vih (tp < 10
µ s)
Min.
11.5
9.5
10.7
8.8
300
Typ.
12
10
2
200
250
11.9
9.9
2
125
400
Max.
17
12.5
10.5
320
17
12.9
10.7
200
10
Unit mA
500 650 mA Isi High/Low Side Driver Short Circuit Obsolete Product(s) - Obsolete Product(s)
Logic Inputs
Vil 1,2,3 Low Level Logic Threshold Voltage 1.5
V
Vih
Iih
Iil
High Level Logic Threshold Voltage
High Level Logic Input Current
Low Level Logic Input Current
VIN = 15V
VIN = 0V
3.6
50 70
1
V
µ
A
µ
A
V
V
V
V
µ
A
µ
A
V
V
V
V
µ
A
µ
A
Ω
(*) R
DSON
is tested in the following way: R
DSON
=
(
V
CC
−
I
1
(
V
CC,
V
CBOOT1
V
CBOOT1
)
)
− (
V
−
I
2
CC
(
V
−
CC
V
,V
CBOOT2
CBOOT2
)
)
where I
1
is pin 8 current when V
CBOOT
= V
CBOOT1
, I
2
when V
CBOOT
= V
CBOOT2
.
3/10
L6386
DC OPERATION (continued)
Symbol Pin
Sense Comparator
Vio
Parameter
Input Offset Voltage
Iio
Vol
Vref
6
2
Input Bias Current
Open Drain Low Level Output
Voltage, Iod = -2.5mA
Comparator Reference voltage
Test Condition
Vcin
≥
0.5
Min.
-10
0.460
Typ.
Max.
Unit
0.2
0.5
10
0.8
0.540
mV
µ
A
V
V
Figure 1. Timing Waveforms
HIN
LIN
SD
HOUT
LOUT
V
REF
V
CIN
DIAG
Note: SD active condition is latched until next negative IN edge.
D97IN522A
Figure 2. Typical Rise and Fall Times vs.
Load Capacitance time
(nsec)
250
D99IN1054
200
Tr
Tf
100
50
0
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25˚C Tamb
4/10
Figure 3. Quiescent Current vs. Supply
Voltage
Iq
(
µ
A)
10 4
D99IN1057
10 3
10 2
10
0 2 4 6 8 10 12 14 16 V
S
(V)
L6386
BOOTSTRAP DRIVER
A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (fig.
4a). In the L6386 a patented integrated structure replaces the external diode. It is realized by a high voltage DMOS, driven synchronously with the low side driver (LVG), with in series a diode, as shown in fig. 4b
An internal charge pump (fig. 4b) provides the
DMOS driving voltage .
The diode connected in series to the DMOS has been added to avoid undesirable turn on of it.
CBOOT selection and charging:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total gate charge :
C
EXT
=
Q gate
V gate
The ratio between the capacitors C
EXT
and C
BOOT is proportional to the cyclical voltage loss .
It has to be:
C
BOOT
>>>C
EXT e.g.: if Q gate
is 30nC and V gate
is 10V, C
EXT
is
3nF. With C
BOOT
= 100nF the drop would be
300mV.
If HVG has to be supplied for a long time, the
C
BOOT
selection has to take into account also the leakage losses.
e.g.: HVG steady state consumption is lower than
200
µ
A, so if HVG T
ON
is 5ms, C
BOOT
has to
Figure 4. Bootstrap Driver.
supply 1
µ
C to C
EXT
. This charge on a 1
µ
F capacitor means a voltage drop of 1V.
The internal bootstrap driver gives great advantages: the external fast recovery diode can be avoided (it usually has great leakage current).
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is on. The charging time (T charge
) of the C
BOOT
is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor.
The bootstrap driver introduces a voltage drop due to the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account.
The following equation is useful to compute the drop on the bootstrap DMOS:
V drop
=
I charge
R dson
→
V drop
=
Q gate
T charge
R dson where Q gate
is the gate charge of the external power MOS, R dson
is the on resistance of the bootstrap DMOS, and T charge
is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
DMOS is about 1V, if the T charge
is 5
µ s. In fact:
V drop
=
30nC
5
µ s
⋅
125
Ω
~ 0.8V
V drop
has to be taken into account when the voltage drop on C
BOOT
is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used.
D
BOOT
V
S
V
BOOT
V
S
V
BOOT Obsolete Product(s) - Obsolete Product(s)
HVG
C
BOOT
HVG
H.V.
C
BOOT
V
OUT
V
OUT
TO LOAD TO LOAD
LVG LVG
D99IN1056 a b
5/10
L6386
Figure 5. Turn On Time vs. Temperature
250
200
150
100
Typ.
50
0
-45 -25 0
@ Vcc = 15V
25 50 75 100 125
Tj (°C)
Figure 6. Turn Off Time vs. Temperature
250
200
150
100
Typ.
@ Vcc = 15V
50
0
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 7. Shutdown Time vs. Temperature
Figure 8. V
BOOT
UV Turn On Threshold vs.
Temperature
15
14
13
12
Typ.
11
10
9
8
7
-45 -25 0
@ Vcc = 15V
25 50 75 100 125
Tj (°C)
Figure 9. V
BOOT
UV Turn Off Threshold vs.
Temperature
15
14
13
12
11
10
Typ.
9
8
7
-45 -25 0
@ Vcc = 15V
25 50 75 100 125
Tj (°C)
250
200
@ Vcc = 15V
100
Typ.
50
0
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 10. V
BOOT
UV Hysteresis
3
@ Vcc = 15V
2.5
2
Typ.
1.5
1
-45 -25 0 25 50 75 100 125
Tj (°C)
6/10
L6386
Figure 11. Vcc UV Turn On Threshold vs. Temperature
15
14
13
12
Typ.
11
10
9
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 14. Output Source Current vs. Temperature
1000
@ Vcc = 15V
800
600
Typ.
400
200
0
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 12. Vcc UV Turn Off Threshold vs.
Temperature
12
11
10
9
Typ.
8
7
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 13. Vcc UV Hysteresis vs. Temperature
3
Figure 15. Output Sink Current vs. Temperature
1000
@ Vcc = 15V
800
Typ.
600
400
200
0
-45 -25 0 25 50 75 100 125
Tj (°C)
2.5
Typ.
Obsolete Product(s) - Obsolete Product(s)
1.5
1
-45 -25 0 25 50 75 100 125
Tj (°C)
7/10
L6386
L
Z
F
I e e3
D
E
DIM.
a1 mm inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
0.51
0.020
1.39
1.65
0.055
0.065
B b b1
0.5
0.25
0.020
0.010
20 0.787
8.5
2.54
15.24
0.335
0.100
0.600
1.27
3.3
7.1
5.1
2.54
0.050
0.130
0.280
0.201
0.100
OUTLINE AND
MECHANICAL DATA
DIP14
8/10
A a1 a2 b b1
C
DIM.
F (1)
G
L
M
S c1
D (1) 8.55
E e
5.8
e3
3.8
4.6
0.4
mm inch
MIN..
TYP.
MAX..
MIN..
TYP..
MAX..
1.75
0.069
0.1
0.35
0.19
0.25
0.004
1.6
0.46
0.014
0.25
0.007
0.009
0.063
0.018
0.010
0.5
0.020
45˚ (typ.)
8.75
0.336
6.2
0.228
0.344
0.244
1.27
7.62
4
5.3
1.27
0.68
0.150
0.181
0.016
8˚ (max.)
0.050
0.300
0.157
0.209
0.050
0.027
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
OUTLINE AND
MECHANICAL DATA
L6386
SO14
9/10
L6386
Obsolete Product(s) - Obsolete Product(s) of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
10/10
