®
L6387
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-
PERATURE RANGE
DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
INTERNAL BOOTSTRAP DIODE
OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6387 is an high-voltage device, manufactured with the BCD"OFF-LINE" technology. It has a Driver structure that enables to drive independent referenced N Channel Power MOS or
SO8 Minidip
ORDERING NUMBERS:
L6387D L6387
IGBT. The Upper (Floating) Section is enabled to work with voltage Rail up to 600V. The Logic Inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.
BLOCK DIAGRAM
BOOTSTRAP DRIVER
8 Vboot
H.V.
Cboot
V
CC
3
UV
DETECTION
HVG
DRIVER
HVG
R
7
HIN
2
LOGIC
S
OUT
LEVEL
SHIFTER
6 TO LOAD
V
CC
1 Obsolete Product(s) - Obsolete Product(s)
LVG
5
4
DRIVER
LVG
GND
D00IN1135
May 2001
1/9
L6387
ABSOLUTE MAXIMUM RATINGS
Symbol
Vout
Vcc
Vboot
Vhvg
Vlvg
Vi dVout/dt
Ptot
Tj
Ts
Output Voltage
Supply Voltage
Floating Supply Voltage
Upper Gate Output Voltage
Lower Gate Output Voltage
Logic Input Voltage
Allowed Output Slew Rate
Total Power Dissipation (Tj = 85 °C)
Junction Temperature
Storage Temperature
Parameter
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900V (Human Body Model)
PIN CONNECTION
Value
-3 to Vboot - 18
- 0.3 to +18
- 1 to 618
- 1 to Vboot
-0.3 to Vcc +0.3
-0.3 to Vcc +0.3
50
750
150
-50 to 150
V
V/ns mW
°C
°C
Unit
V
V
V
V
V
LIN
HIN
Vcc
GND
1
2
3
4
D97IN517
6
5
8
7
Vboot
HVG
OUT
LVG
THERMAL DATA
Symbol
R th j-amb
Parameter
Thermal Resistance Junction to Ambient
SO8
150
Minidip
100
Unit
°C/W
PIN DESCRIPTION
N.
1
2
3
4
6
7
8
Name
LIN
HIN
Vcc
GND
LVG (*)
VOUT
HVG (*)
Vboot
Type
I
I
I
O
O
O
Lower Driver Logic Input
Upper Driver Logic Input
Low Voltage Power Supply
Ground
Low Side Driver Output
Upper Driver Floating Reference
High Side Driver Output
Bootstrap Supply Voltage
Function
(*) The circuit guarantees 0.3V maximum on the pin (@ I sink
= 10mA). This allows to omit the "bleeder" resistor connected between the gate
and the source of the external MOSFET normally used to hold the pin low.
2/9
L6387
RECOMMENDED OPERATING CONDITIONS
Symbol Pin
Vout 6
8 Vboot-
Vout fsw
Vcc
T j
2
Parameter
Output Voltage
Floating Supply Voltage
Switching Frequency
Supply Voltage
Junction Temperature
Test Condition
HVG,LVG load CL = 1nF
Note 1: If the condition Vboot - Vout < 18V is guaranteed, Vout can range from -3 to 580V.
ELECTRICAL CHARACTERISTICS
AC Operation (Vcc = 15V; Tj = 25°C)
Min.
Note 1
Note 1
-45
Symbol Pin ton 1 vs 7
Parameter
High/Low Side Driver Turn-On
Propagation Delay toff tr tf
2 vs 5 High/Low Side Driver Turn-Off
Propagation Delay
7,5 Rise Time
7,5 Fall Time
DC OPERATION (Vcc = 15V; Tj = 25°C)
Test Condition
Vout = 0V
Vout = 600V
CL = 1000pF
CL = 1000pF
Min.
Typ.
Typ.
110
105
50
30
Max.
580
17
400
17
125
Max.
Unit
V
V kHz
V
°C
Unit ns ns ns ns
Symbol Pin
Low Supply Voltage Section
Parameter
3 Vcc
Vccth1
Vccth2
Supply Voltage
Vcc UV Turn On Threshold
Vcc UV Turn Off Threshold
Vcchys
Iqccu
Vcc UV Hysteresis
Undervoltage Quiescent Supply
Current
Quiescent Current Iqcc
R dson
Bootstrap Driver on Resistance (*)
Bootstrapped supply Voltage Section
VBS
IQBS
8 Bootstrap Supply Voltage
VBS Quiescent Current
ILK High Voltage Leakage Current
High/Low Side Driver
Iso
Isi
5,7 Source Short Circuit Current
Sink Short Circuit Current
Logic Inputs
Test Condition
Vcc
≤
9V
Vcc = 15V
Vcc
≥
12.5V
HVG ON
VS = VB = 600V
VIN = Vih (tp < 10
µ s)
VIN = Vil (tp < 10
µ s)
Min.
5.5
5
300
450
Typ.
6
5.5
0.5
150
250
125
400
650
Max.
17
6.5
6
220
320
17
200
10
Unit
µ
A
Ω
V
µ
A
µ
A mA mA
Vil 2,3 Low Level Logic Threshold Voltage 1.5
V
Vih
Iih
High Level Logic Threshold Voltage
High Level Logic Input Current VIN = 15V
3.6
50 70
V
µ
A
Iil Low Level Logic Input Current VIN = 0V 1
µ
A
V
V
V
V
µ
A
(*) R
DSON
is tested in the following way: R
DSON
=
(
V
I
1
(
CC
−
V
V
CC,
V
CBOOT1
CBOOT1
)
)
−
−
I
(
V
2
CC
(
V
−
V
CBOOT2
CC
,V
CBOOT2
)
) where I
1
is pin 8 current when V
CBOOT
= V
CBOOT1
, I
2
when V
CBOOT
= V
CBOOT2
.
3/9
L6387
Figure 1. Typical Rise and Fall Times vs.
Load Capacitance time
(nsec)
250
D99IN1054
200
Tr
150
100
50
Tf
0
0 1 2 3 4 5 C (nF)
For both high and low side buffers @25˚C Tamb
Figure 2. Quiescent Current vs. Supply
Voltage
Iq
(
µ
A)
10 4
D99IN1055
10 3
10 2
10
0 2 4 6 8 10 12 14 16 V
S
(V)
Input Logic
L6387 Input Logic is V
CC
(17V) compatible. An interlocking features is offered (see truth table below) to avoid undesired simultaneous turn ON of both Power Switches driven.
Table 1.
C
EXT
=
Q gate
V gate
The ratio between the capacitors C
EXT
and C
BOOT is proportional to the cyclical voltage loss .
It has to be:
Input HIN 0 0 1 1 C
BOOT
>>>C
EXT
LIN
HVG
0
0
1
0
0
1
1
0 Output
LVG 0 1 0 0 e.g.: if Q gate
is 30nC and V gate
is 10V, C
EXT
is
3nF. With C
BOOT
= 100nF the drop would be
300mV.
BOOTSTRAP DRIVER
If HVG has to be supplied for a long time, the
C
BOOT
selection has to take into account also the leakage losses.
A bootstrap circuitry is needed to supply the high voltage section. This function is normally accomplished by a high voltage fast recovery diode (fig.
3a). In the L6387 a patented integrated structure e.g.: HVG steady state consumption is lower than
200
µ
A, so if HVG T
ON
is 5ms, C
BOOT
has to supply 1
µ
C to C
EXT
. This charge on a 1 pacitor means a voltage drop of 1V.
µ
F careplaces the external diode. It is realized by a high voltage DMOS, driven synchronously with
The internal bootstrap driver gives great advanthe low side driver (LVG), with in series a diode, tages: the external fast recovery diode can be as shown in fig. 3b avoided (it usually has great leakage current).
An internal charge pump (fig. 3b) provides the
DMOS driving voltage .
This structure can work only if V
OUT
is close to
GND (or lower) and in the meanwhile the LVG is
Obsolete Product(s) - Obsolete Product(s)
is the time in which both conditions are fulfilled and it has to be long enough to charge the capacitor.
CBOOT selection and charging:
To choose the proper C
BOOT
value the external
MOS can be seen as an equivalent capacitor.
This capacitor C
EXT
is related to the MOS total gate charge :
The bootstrap driver introduces a voltage drop due to the DMOS R
DSON
(typical value: 125
Ohm). At low frequency this drop can be neglected. Anyway increasing the frequency it must be taken in to account.
The following equation is useful to compute the
4/9
drop on the bootstrap DMOS:
V drop
=
I charge
R dson
→
V drop
=
Q gate
T charge
R dson where Q gate
is the gate charge of the external power MOS, R dson
is the on resistance of the bootstrap DMOS, and T charge
is the charging time of the bootstrap capacitor.
For example: using a power MOS with a total gate charge of 30nC the drop on the bootstrap
Figure 3. Bootstrap Driver.
L6387
DMOS is about 1V, if the T charge
is 5
µ s. In fact:
V drop
=
30nC
5
µ s
⋅
125
Ω
~ 0.8V
V drop
has to be taken into account when the voltage drop on C
BOOT
is calculated: if this drop is too high, or the circuit topology doesn’t allow a sufficient charging time, an external diode can be used.
D
BOOT
V
S
HVG
V
BOOT
H.V.
V
OUT
C
BOOT
TO LOAD
V
S
HVG
V
BOOT
H.V.
V
OUT
C
BOOT
TO LOAD a
LVG b
LVG
D99IN1056
Figure 5. Turn Off Time vs. Temperature Figure 4. Turn On Time vs. Temperature
250
200
150
100
Typ.
@ Vcc = 15V
250
200
150
100
Typ.
@ Vcc = 15V
50 50
Obsolete Product(s) - Obsolete Product(s)
-45 -25 0 25 50 75 100 125 -45 -25 0 25 50 75 100 125
Tj (°C) Tj (°C)
5/9
L6387
Figure 6. Output Source Current vs.
Temperature
1000
@ Vcc = 15V
800
600
400
Typ.
200
0
-45 -25 0 25 50 75 100 125
Tj (°C)
Figure 7. Output Sink Current vs. Temperature
1000
800
600
Typ.
400
@ Vcc = 15V
200
0
-45 -25 0 25 50 75 100 125
Tj (°C)
6/9
DIM.
A a1
E e
B b b1
D e3 mm inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
3.32
0.131
0.51
0.020
1.15
0.356
0.204
7.95
1.65
0.55
0.045
0.014
0.304
0.008
10.92
9.75
0.313
0.065
0.022
0.012
0.430
0.384
2.54
7.62
7.62
0.100
0.300
0.300
e4
F
I
L
Z
3.18
6.6
5.08
3.81
0.125
1.52
0.260
0.200
0.150
0.060
OUTLINE AND
MECHANICAL DATA
L6387
Minidip
7/9
L6387
A a1 a2 a3 b b1
C c1
D (1)
E e e3
F (1)
L
M
S
DIM.
mm inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
0.1
1.75
0.25
0.004
0.069
0.010
0.65
0.35
0.19
0.25
4.8
5.8
1.65
0.85
0.48
0.026
0.014
0.25
0.007
0.5
0.010
45
°
(typ.)
5.0
0.189
6.2
0.228
0.065
0.033
0.019
0.010
0.020
0.197
0.244
1.27
3.81
0.050
0.150
3.8
0.4
4.0
0.15
1.27
0.016
0.6
8
°
(max.)
0.157
0.050
0.024
(1) D and F do not include mold flash or protrusions. Mold flash or
potrusions shall not exceed 0.15mm (.006inch).
OUTLINE AND
MECHANICAL DATA
SO8
8/9
L6387
Obsolete Product(s) - Obsolete Product(s) granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
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