SD2918
RF power transistor HF/VHF/UHF n-channel MOSFETs
Features
■
■
■
■
Gold metallization
Excellent thermal stability
Common source configuration
P
OUT
= 30 W min. with 18 dB gain @ 30 MHz
Description
The SD2918 is a n-channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 200 MHz.
M113
Epoxy sealed
Figure 1.
Pin connection
4
1. Drain
2. Source
3. Gate
3
1
2
4. Source
Table 1.
Device summary
Order code
SD2918
Marking
SD2918
November 2009 Doc ID 6866 Rev 2
Package
M113
Packaging
Plastic tray
1/14
www.st.com
14
5
6
3
4
7
8
Contents
Contents
1
2
SD2918
Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit and BOM list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14 Doc ID 6866 Rev 2
SD2918 Electrical data
Table 2.
Symbol
Absolute maximum ratings (T
CASE
= 25 °C)
Parameter
V
(BR)DSS
V
DGR
V
GS
I
D
P
DISS
T
J
T
STG
Drain source voltage
Drain-gate voltage (R
GS
= 1 M
Ω)
Gate-source voltage
Drain current
Power dissipation
Max. operating junction temperature
Storage temperature
Value
125
125
± 20
6
175
200
-65 to +150
Unit
W
°C
°C
V
A
V
V
Table 3.
Symbol
Thermal data
Parameter Value Unit
R thJ-C
R thC-S
Junction-case thermal resistance
Junction-heatsink thermal resistance
(1)
1.0
0.3
°C/W
1.
Determined using a flat aluminum or copper heatsink with thermal compound applied (dow corning 340 or equivalent).
Doc ID 6866 Rev 2 3/14
4/14
Electrical characteristics SD2918
T
CASE
= +25 o
C
2.1 Static
Table 4.
Symbol
Static
Test conditions
V
(BR)DSS
I
DSS
I
GSS
V
GS(Q)
V
DS(ON) g
FS
C
ISS
C
OSS
C
RSS
V
GS
= 0 V I
DS
= 10 mA
V
GS
= 0 V V
DS
= 50 V
V
GS
= 20 V V
DS
= 0 V
V
DS
= 10 V I
D
= 10 mA
V
GS
= 10 V I
D
= 2.5 A
V
DS
= 10 V I
D
= 2.5 A
V
GS
= 0 V V
DS
= 50 V f = 1 MHz
V
GS
= 0 V V
DS
= 50 V f = 1 MHz
V
GS
= 0 V V
DS
= 50 0 V f = 1 MHz
Min Typ Max Unit
125
1.0
0.8
58
35.5
7.5
1.0
1
5.0
5.0
V mA
µA
V
V mho pF pF pF
2.2 Dynamic
Table 5.
Symbol
Dynamic
Test conditions
P
OUT
G
PS h
D
Load mismatch
V
DD
= 50 V, I
DQ
= 100 mA, f = 30 MHz, P
IN
= 0.475 W
V
DD
= 50 V, I
DQ
= 100 mA, f = 30 MHz, P out
= 30 W
V
DD
= 50 V, I
DQ
= 100 mA, f = 30 MHz, P out
= 30 W
V
DD
= 50 V, I
DQ
= 100 mA, f = 30 MHz, P out
= 30 W
All phase angles
Min Typ Max Unit
30
18
50
22
55
-
W dB
%
30:1 VSWR
Doc ID 6866 Rev 2
SD2918 Impedance data
Figure 2.
Impedance data
Typical Input
Impedance
G
Z in
S
Table 6.
Impedance data
Freq
30 MHz
Z
IN
(
Ω)
24.4 - j 13.4
D
Z
DL
Typical Drain
Load Impedance
Z
DL
(
Ω)
28.8 + j 7.2
Doc ID 6866 Rev 2 5/14
Typical performances SD2918
Figure 3.
Capacitance vs drain-source voltage
Figure 4.
Maximum thermal resistance vs case temperature
Figure 5.
Drain current vs gate voltage Figure 6.
Gate-source voltages vs case temperature
Figure 7.
Output power vs input power Figure 8.
Output power vs input power at different T
C
6/14 Doc ID 6866 Rev 2
SD2918 Typical performances
Figure 9.
Output power vs supply voltage Figure 10.
Output power vs gate voltage
Figure 11.
Power gain and efficiency vs output power
Doc ID 6866 Rev 2 7/14
Test circuit and BOM list
5 Test circuit and BOM list
Figure 12.
30 MHz test circuit schematic
V
B
+
RF
INPUT
+50V
+
RF
OUTPUT
SD2918
8/14
Table 7.
Component
Bill of material
Part n.
R4 CR2512-1W-101JB
R3
R2
R1
FB3
FB2
FB1
L3
29SJ901
29SJ901
CR2512-1W-3R9JT
2843000102
2743021447
2743021447
8073
L2
L1
1557
8073
Supplier Description
VENKEL
XICON
XICON
VENKEL
100
Ω, 1 W surface mount chip resistor
160
Ω, 1 W carbon film axial-lead resistor
160
Ω, 1 W carbon film axial-lead resistor
3.9
Ω, 1 W surface mount chip resistor
FAIR-RITE CORP. Multi-aperture core
FAIR-RITE CORP. Shield bead surface mount EMI
FAIR-RITE CORP. Shield bead surface mount EMI
BELDEN
Inductor, 3 turns air wound #14AWG,
ID= 0.375[9.53], poly coated magnet wire
ALPHA
BELDEN
Inductor, 7 turns around shield bead
(PT# Fair-rite 2643801102) #16AWG hook up wire.
Inductor, 4 turns air wound #14AWG,
ID= 0.375[9.53], poly coated magnet wire
Doc ID 6866 Rev 2
SD2918 Test circuit and BOM list
Table 7.
Component
Bill of material (continued)
Part n.
Supplier
C10
C9
C8
C7
C6
C5
C4
C3
C2
C1
T2
T1
PCB
SKA100M160
G0300M1026
MALLORY
C1812X7R501-103KNE VENKEL
C1812X7R501-103KNE VENKEL
C1812X7R501-103KNE VENKEL
RVS-50V100M-R ELNA
C1812X7R501-103KNE VENKEL
ATC200B103KW50X
463
ATC200B103KW50X
ATC200B103KW50X
ATC
ARCO
ATC
ATC
ROGERS CORP.
Description
10 µF/160 V axial-lead aluminium electrolytic capacitor
0.01 µF/500 V surface mount ceramic chip capacitor
0.01 µF/500 V surface mount ceramic chip capacitor
0.01 µF/500 V surface mount ceramic chip capacitor
10 µF/50 V vertical surface mount chip aluminium electrolytic capacitor
0.01 µF/500 V surface mount ceramic chip capacitor
10000 pF ATC 200B surface mount ceramic chip capacitor
20-180 pF type ST46 standard 3 turns variable capacitor
10000 pF ATC 200B surface mount ceramic chip capacitor
10000 pF ATC 200B surface mount ceramic chip capacitor
Transformer: 4:9, 75.0
Ω, o.d. 0.090 1”
LG. coaxial cable 5 turns around shield bead (PT#2643801002 FAIR-
RITE CORP.)
Transformer: 9:4, 75.0
Ω, o.d. 0.090 1”
LG. coaxial cable 5 turns around shield bead (PT#2643801002 FAIR-
RITE CORP.)
Woven fiberglass reinforced PTFE
0.030” THK,
ε
r
= 2.55, 2Oz ED Cu both sides
Doc ID 6866 Rev 2 9/14
Circuit layout
Figure 13.
30 MHz test circuit photomaster
SD2918
Figure 14.
30 MHz production test fixture
REF. 7143542A
10/14 Doc ID 6866 Rev 2
SD2918
7 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at:
www.st.com
.
ECOPACK
®
is an ST trademark.
Doc ID 6866 Rev 2 11/14
Package mechanical data
Table 8.
M113 (.380 DIA 4/L N/HERM W/FLG) mechanical data mm.
Inch
Dim.
Min Typ Max
A 5.59
B 19.81
C 18.29
D 24.64
E 9.40
F 0.10
G 2.16
H 4.06
I 7.14
J 6.22
6.48
K 3.05
3.30
5.84
20.83
18.54
24.89
9.78
0.15
2.67
4.57
Min
0.220
0.780
0.720
0.970
0.370
0.004
0.085
0.160
0.245
0.120
Typ
Figure 15.
Package dimensions
SD2918
Max
0.230
0.820
0.730
0.980
0.385
0.006
0.105
0.180
0.281
0.255
0.130
12/14
Controlling dimensions: inches
Doc ID 6866 Rev 2
1010936D
SD2918
Table 9.
Date
21-Jun-2004
05-Nov-2009
Document revision history
Revision
1
2
First release
Updated marking on
Table 1
.
Changes
Revision history
Doc ID 6866 Rev 2 13/14
SD2918
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