STMicroelectronics SD2918 Datasheet

Below you will find brief information for RF power transistor SD2918. The SD2918 is a n-channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 200 MHz. For example, the device is a good option for use in RF amplifier circuit design for applications that require a high power output, including wireless communications, industrial heating, and medical devices. The SD2918 offers excellent thermal stability and can be used in a variety of applications, but is particularly well-suited for high-power applications.

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RF power transistor SD2918 Datasheet | Manualzz

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Key features

  • Gold metallization

  • Excellent thermal stability

  • Common source configuration

  • POUT = 30 W min. with 18 dB gain @ 30 MHz

  • Epoxy sealed

  • n-channel MOSFETs

  • 50 V dc large signal applications

  • up to 200 MHz

Frequently asked questions

The maximum drain current for the SD2918 is 6A.

The SD2918 is intended for use in applications up to 200 MHz.

The SD2918 has a typical power output of 30W at 30 MHz and 18 dB gain.

The maximum power dissipation for the SD2918 is 175W.

The maximum operating junction temperature is 200°C.

The typical input impedance of the SD2918 at 30 MHz is 24.4- j 13.4 ohms.

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