STD30PF03LT4
STD30PF03L-1
P-channel 30 V - 0.025
Ω - 24 A - DPAK / IPAK
STripFET™ II Power MOSFET
Features
Type
STD30PF03LT4
STD30PF03L-1
V
DSS
30 V
30 V
R
DS(on) max
< 0.028
Ω
< 0.028
Ω
I
D
24 A
24 A
■
■
■
Standard outline for easy automated surface mount assembly
Low threshold device
Low gate charge
Application
■
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge.
1
DPAK
3
IPAK
1
2
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
STD30PF03LT4
STD30PF03L-1
Marking
D30PF03L
D30PF03L
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
January 2008 Rev 2 1/13
www.st.com
13
Electrical ratings STD30PF03LT4 - STD30PF03L-1
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
(1)
I
D
(1)
I
DM
(2)
P
TOT
Drain-source voltage (V
Gate-source voltage
GS
=0)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25 °C
= 100 °C
Total dissipation at T
C
=25 °C
Derating factor
E
AS
(3)
T stg
T j
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1.
Current limited by wire bonding
2.
Pulse width limited by safe operating area
3.
Starting T
J
= 25 °C, I
D
= 12 A, V
DD
=15 V
Value
30
± 16
24
24
96
70
0.47
850
-55 to 175
175
Table 3.
Thermal data
Symbol Parameter
R thj-case
R thj-amb
Thermal resistance junction-case max
Thermal resistance junction-ambient max
R thj-pcb
T l
Thermal resistance junction-pcb max
Maximum lead temperature for soldering purpose
1.
When mounted on FR- 4board of 1 inch².
Max value
DPAK IPAK
2.14
--
50
(1)
--
100
--
275
Unit
°C/W
°C/W
°C/W
°C/W
A
A
W
W/°C mJ
°C
°C
Unit
V
V
A
Note:
2/13
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
STD30PF03LT4 - STD30PF03L-1 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4.
On/off states
Symbol Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
I
D
= 250 µA, V
GS
= 0
V
DS
=Max rating
V
DS
=Max rating,Tc=100 °C
V
GS
= ±16 V
R
DS(on)
Static drain-source on resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 12 A
V
GS
= 5 V, I
D
= 12 A
Min.
Typ.
Max.
Unit
30
1
1
10
0.025
0.032
0.028
0.040
V
µA
µA
±
100 nA
V
Ω
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions
g fs
(1)
C iss
C oss
C rss
Forward transconductance
V
DS
=15 V, I
D
= 12 A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25 V, f=1MHz, V
GS
=0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
=15 V, I
=5 V
Figure 15
1.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
D
= 24 A
Min.
Typ.
Max.
Unit
23 S
1670
345
120
18.6
5.5
11
28 pF pF pF nC nC nC
Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/13
Electrical characteristics STD30PF03LT4 - STD30PF03L-1
Table 6.
Symbol
t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
=25 V, I
D
=24 A,
R
G
=4.7
Ω, V
GS
=5 V
Figure 14
Min Typ Max Unit
64
122
36
26 ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
I
SD
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
SD
= 12 A, V
GS
=0
I
SD
=24 A, di/dt =100 A/µs,
V
DD
=50 V, Tj=150 °C
Figure 16
Min Typ Max Unit
24
96
1.3
40
52
2.6
A
A
V ns
µC
A
Note:
4/13
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
STD30PF03LT4 - STD30PF03L-1
Figure 2.
Safe operating area
Electrical characteristics
Figure 3.
Thermal impedance
Figure 4.
Output characteristics Figure 5.
Transfer characteristics
Figure 6.
Transconductance Figure 7.
Static drain-source on resistance
5/13
Electrical characteristics STD30PF03LT4 - STD30PF03L-1
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Capacitance variations
Figure 10.
Normalized gate threshold voltage vs temperature
Figure 11.
Normalized on resistance vs temperature
Figure 12.
Source-drain diode forward characteristics
Figure 13.
Normalized breakdown voltage vs temperature
6/13
STD30PF03LT4 - STD30PF03L-1
3 Test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Test circuit
Figure 16. Test circuit for diode recovery behavior
7/13
Package mechanical data
4 Package mechanical data
STD30PF03LT4 - STD30PF03L-1
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
8/13
STD30PF03LT4 - STD30PF03L-1
DIM.
C2
D
D1
E
E1 e
B b4
C
A
A1
A2
L2
L4
R
V2 e1
H
L
(L1)
4.4
9.35
1
0.6
0°
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
DPAK MECHANICAL DATA
mm.
TYP
5.1
4.7
2.28
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
4.6
10.1
0.173
0.368
0.039
2.8
0.8
0.2
1
8°
0.023
0°
Package mechanical data inch
TYP.
0.200
0.185
0.090
0.110
0.031
0.008
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
8°
0068772-F
9/13
Package mechanical data STD30PF03LT4 - STD30PF03L-1
DIM.
G
H
L
L1
L2
C
C2
D
E
B2
B3
B5
B6
A
A1
A3
B
0.45
0.48
6
6.4
4.4
15.9
9
0.8
MIN.
2.2
0.9
0.7
0.64
5.2
TO-251 (IPAK) MECHANICAL DATA
mm
TYP.
0.3
0.8
0.95
0.6
0.6
6.2
6.6
4.6
16.3
9.4
1.2
1
MAX.
2.4
MIN.
0.086
1.1
0.035
1.3 0.027
0.9
5.4
0.85
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.626
0.354
0.031
inch
TYP.
0.012
0.031
H
0.037
0.023
0.023
0.244
0.260
0.181
0.641
0.370
0.047
0.039
MAX.
0.094
0.043
0.051
0.031
0.212
0.033
L2
D
L
L1
0068771-E
10/13
STD30PF03LT4 - STD30PF03L-1
5 Packaging mechanical data
DPAK FOOTPRINT
Packaging mechanical data
All dimensions are in millimeters
TAPE MECHANICAL DATA
mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
D1
E
F
K0
A0
B0
B1
D
P0
P1
P2
R
W
6.8
7 0.267 0.275
10.4
10.6
0.409 0.417
1.5
1.5
12.1
1.6
0.476
0.059 0.063
0.059
1.65
1.85
0.065 0.073
7.4
7.6
0.291 0.299
2.55
2.75
0.100 0.108
3.9
7.9
4.1
8.1
0.153 0.161
0.311
0.319
1.9
40
2.1
0.075 0.082
1.574
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
G
N
T
A
B
C
D
REEL MECHANICAL DATA
mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
11/13
Revision history STD30PF03LT4 - STD30PF03L-1
Table 8.
Date
14-Jan-2008
Document revision history
Revision
2
Changes
– Document reformatted
– Corrected marking on
Table 1: Device summary
12/13
STD30PF03LT4 - STD30PF03L-1
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