STD15NF10
N-channel 100 V, 0.060
Ω
, 23 A, DPAK low gate charge STripFET™ II Power MOSFET
Features
Type
STD15NF10
V
DSSS
100 V
R
DS(on)
max
< 0.065
Ω
I
D
23 A
■
■
■
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Application
■ Switching applications
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications.
It is also intended for any applications with low gate drive requirements.
DPAK
1
3
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order code
STD15NF10T4
Marking
D15NF10
Package
DPAK
Packaging
Tape and reel
November 2008 Rev 6 1/13 www.st.com
13
5
6
3
4
1
2
Contents
Contents
STD15NF10
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STD15NF10 Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate-source voltage
= 0)
= 20 k
Ω
)
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
C
C
= 25 °C
=100 °C
Total dissipation at T
C
= 25 °C
Derating factor
E
AS
(2) dv/dt
(3)
Single pulse avalanche energy
Peak diode recovery voltage slope
T stg
T
J
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
Starting T
J
= 25 o
C, I
D
= 10A, V
DD
= 30V
3.
I
SD
≤ 13 A, di/dt ≤ 300 A/µs, V
DS
≤ V
(BR)DSS
, T
J
≤ T
JMAX
Table 3.
Thermal data
Symbol Parameter
R thJC
R thJA
T l
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
100
100
± 20
23
16
92
70
0.46
180
9
-55 to 175
Value
2.14
100
300
Obsolete Product(s) - Obsolete Product(s)
Unit
A
W
A
A
V
V
V
W/°C mJ
V/ns
°C
Unit
°C/W
°C/W
°C
3/13
Electrical characteristics STD15NF10
(T
CASE
= 25 °C unless otherwise specified)
Table 4.
On (1) /off states
Symbol Parameter Test conditions
V
(BR)DSS
Drain-source breakdown voltage
I
D
= 250
µ
A, V
GS
= 0
I
DSS
Zero gate voltage drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,@ 125 °C
I
GSS
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
V
GS
= ± 20 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source on resistance
V
GS
= 10 V, I
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
D
= 12 A
Min.
100
2
Typ.
3
0.06
Max.
1
10
±100
4
0.065
Unit
V
µA
µA nA
V
Ω
Table 5.
Dynamic
Symbol Parameter Test conditions Min.
Typ.
Max.
Unit g fs
(1)
C iss
C oss
C rss
Forward transconductance V
DS
= 15 V
,
I
D
= 7.5 A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 25 V, f = 1 MHz,
= 0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
= 80 V, I
D
= 10 V
= 24 A
12
870
125
50
30
6
10
40
S pF pF pF nC nC nC
Table 6.
Switching times
Symbol t d(on)
Parameter
Turn-on delay time
Test conditions Min.
Typ.
Max.
Unit
Obsolete Product(s) - Obsolete Product(s)
Rise time
60
45 ns ns t r
V
DD
= 50 V, I
D
= 12 A,
R
G
= 4.7
Ω,
V
GS
= 10 V t d(off)
Turn-off delay time 49 ns
Figure 13 on page 8
t f
Fall time 17 ns
4/13
STD15NF10 Electrical characteristics
Table 7.
Source drain diode
Symbol Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2)
Source-drain current
Source-drain current (pulsed)
I t
Q rr rr
RRM
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20 A, V
GS
= 0
I
SD
= 24 A, di/dt = 100 A/µs,
V
DD
= 30 V, T
J
= 150 °C
Figure 15 on page 8
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ.
Max Unit
23 A
92 A
1.5
V
100
375
7.5
ns nC
A
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Electrical characteristics
Figure 2.
Safe operating area Figure 3.
Thermal impedance
STD15NF10
Figure 4.
Output characteristics Figure 5.
Transfer characteristics
Figure 6.
Transconductance Figure 7.
Static drain-source on resistance
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STD15NF10 Electrical characteristics
Figure 8.
Gate charge vs. gate-source voltage Figure 9.
Capacitance variations
Figure 10. Normalized gate threshold voltage vs. temperature
Figure 11. Normalized on resistance vs. temperature
Figure 12. Source-drain diode forward characteristics
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Test circuit
3 Test circuit
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
STD15NF10
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped Inductive load test circuit
Figure 17. Unclamped inductive waveform
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STD15NF10
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
DIM.
H
L
L1
L2
E
E1 e e1 b 4 c c2
D
D1
A
A1
A2 b
L4
R
V2 min.
2.20
0.
9 0
0.0
3
0.64
5.20
0.45
0.4
8
6.00
6.40
TO-252 (DPAK) mechanical data
mm.
typ
5.10
4.70
2.2
8
4.40
9 .
3 5
1
0.60
0 o
2.
8 0
0.
8 0
0.20
max.
2.40
1.10
0.2
3
0.
9 0
5.40
0.60
0.60
6.20
6.60
4.60
10.10
1
8 o
STD15NF10
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006 8 772_G
10/13
STD15NF10
5 Packaging mechanical data
DPAK FOOTPRINT
Packaging mechanical data
All dimensions are in millimeters
TAPE MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
P1
P2
R
W
A0 6.8
7 0.267
0.275
B0 10.4
10.6
0.409
0.417
B1
D
D1
1.5
1.5
12.1
1.6
0.059
0.059
0.476
0.063
E
F
1.65
1.85
0.065
0.073
7.6
0.291
0.299
K0 2.55
2.75
0.100
0.108
P0 3.9
4.1
0.153
0.161
7.9
1.9
40
8.1
2.1
0.311
0.075
1.574
0.319
0.082
15.7
16.3
0.618
0.641
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA mm inch
DIM.
MIN.
MAX.
MIN.
MAX.
G
N
T
A
B
C
D
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0.795
16.4
18.4
0.645
0.724
50 1.968
22.4
0.881
BASE QTY
2500
BULK QTY
2500
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Revision history
Table 8.
Revision history
Date Revision
21-Jun-2004
09-Sep-2004
08-Aug-2006
04-Nov-2008
3
4
5
6
Changes
No history because migration.
Complete document
New template, updated SOA
Q
G
max value in
Table 5
has been corrected.
STD15NF10
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STD15NF10
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