®
BD909/911
BD910/912
COMPLEMENTARY SILICON POWER TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD909 and BD911 are silicon Epitaxial-Base
NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.
The complementary PNP types are BD910 and
BD912 respectively.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
V
CBO
V
V
CEO
EBO
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current I
E
,I
C
I
B
P tot
T stg
Base Current
Total Dissipation at T c
≤
25
Storage Temperature o
C
T j
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
Value
BD909
BD910
80
80
5
15
5
90
-65 to 150
150
BD911
BD912
100
100
Unit
V
A
V
V
A
W o
C o
C
1/6
BD909 / BD910 / BD911 / BD912
THERMAL DATA
R thj-case
Thermal Resistance Junction-case Max 1.4
o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CBO
Collector Cut-off
Current (I
E
= 0)
I
CEO
Collector Cut-off
Current (I
B
= 0)
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
V
BE
∗ h
FE
∗
Base-Emitter Voltage
DC Current Gain
I
I for BD909/910 V
CB
= 80 V for BD911/912 V
CB
T case
= 150 o
C
= 100 V for BD909/910 V
CB
= 80 V for BD911/912 V
CB
= 100 V for BD909/910 V for BD911/912 V
V
C
EB
= 5 V
CE
CE
= 40 V
= 50 V
for BD911/912
I
C
I
C
C
= 100 mA for BD909/910
= 5 A I
= 10 A I
= 10 A I
B
B
B
= 0.5 A
= 2.5 A
= 2.5 A
I
C
= 5 A V
CE
= 4 V
I
C
= 0.5 A V
CE
= 4 V
I
C
= 5 A V
CE
= 4 V
I
C
= 10 A V
CE
= 4 V f
T
Transition frequency I
C
= 0.5 A V
CE
= 4 V
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
80
100
40
15
5
3
Typ.
Max.
500
500
1
1
5
5
1
1
3
2.5
1.5
250
150
V
V
V
V
V
V
MHz
Unit
µ
A
µ
A mA mA mA mA mA
Safe Operating Area Derating Curves
2/6
DC Current Gain (NPN type)
BD909 / BD910 / BD911 / BD912
DC Current Gain (PNP type)
DC Transconductance (NPN type) DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type)
3/6
BD909 / BD910 / BD911 / BD912
Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type) Transition Frequency (PNP type)
4/6
DIM.
E
F
F1
F2
G
A
C
D
D1
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
BD909 / BD910 / BD911 / BD912
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
mm
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
inch
TYP.
MAX.
0.181
0.051
0.107
1.27
0.49
0.050
0.70
0.019
0.027
0.61
1.14
1.14
4.95
0.88
1.70
1.70
5.15
0.024
0.044
0.044
0.194
0.034
0.067
0.067
0.203
2.4
10.0
2.7
10.40
0.094
0.393
0.106
0.409
16.4
13.0
0.645
14.0
0.511
0.551
2.65
15.25
6.2
3.5
3.75
2.95
15.75
6.6
3.93
3.85
0.104
0.600
0.244
0.137
0.147
0.116
0.620
0.260
0.154
0.151
P011C
5/6
BD909 / BD910 / BD911 / BD912
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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