®
BUL381D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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■
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■
■
■
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STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
LARGE RBSOA
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
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ELECTRONIC TRANSFORMERS FOR
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HALOGEN LAMPS
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies.
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P tot
T stg
T j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t p
< 5 ms)
Base Current
Base Peak Current (t p
< 5 ms)
Total Dissipation at T c
= 25 o
C
Storage Temperature
Max. Operating Junction Temperature
July 2003
Value
800
400
9
5
8
2
4
70
-65 to 150
150
Unit
V
A
A
V
V
A
A
W o
C o
C
1/6
BUL381D
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Min.
Symbol Parameter Test Conditions
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V T j
= 125 o
C
V
CE
= 400 V I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
Emitter-Base Voltage
(I
C
= 0)
V
CE(sat)
∗
Collector-Emitter
Saturation Voltage
I
I
C
E
= 100 mA L = 25 mH
= 10 mA
V
BE(sat)
∗
Base-Emitter h
FE
∗
Saturation Voltage
DC Current Gain
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.75 A
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 2 A V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
I
C
= 2 A V
CC
= 250 V t p
= 30
µ s
I
B1
= - I
B2
= 0.4 A t s t f
RESISTIVE LOAD
Storage Time
Fall Time t t s f
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
V
T
C j
= 2 A I
= 125 C
B1
BE(o ff)
CL
= -5 V R
BB
= 250 V L = 200
µ
H o
= 0.4 A
= 0
Ω
V f
Diode Forward Voltage I
C
∗
Pulsed: Pulse duration = 300
µ s, duty cycle 1.5 %
= 2 A
400
9
8
10
1.5
Typ.
1.3
100
0.5
0.7
1.1
1.1
1.2
2.5
0.8
o
C/W o
C/W
Max.
100
500
250
Unit
µ
A
µ
A
µ
A
2.5
V
V
V
V
V
V
V
V
µ s
µ s
µ s ns
Safe Operating Area Derating Curve
2/6
DC Current Gain DC Current Gain
BUL381D
Collector Emitter Saturation Voltage Base Emitter Saturation Voltage
Inductive Fall Time Inductive Storage Time
3/6
BUL381D
Reverse Biased SOA
Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Resistive Load Switching Test Ciurcuit
1) Fast electronic switch
2) Non-inductive Resistor
4/6
DIM.
H2
L2
L4
L5
L6
L7
L9
M
DIA.
A
C
D
E
F
F1
F2
G
G1
BUL381D
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
mm
TYP.
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
5/6
BUL381D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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