®
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE h
FE
CLASSIFICATION
APPLICATIONS
■
LINEAR AND SWITCHING INDUSTRIAL
■
EQUIPMENT
AUDIO POWER AMPLIFIER
■
■
■
GENERAL POWER SWITCHING
DC-AC CONVERTER
EASY DRIVER FOR LOW VOLTAGE
DC MOTOR
DESCRIPTION
The TIP105 is a silicon Epitaxial-Base PNP transistor in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear and switching applications.
The preferred complementary NPN type is the
TIP102.
TIP105
PNP SILICON POWER
DARLINGTON TRANSISTOR
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 5 K
Ω
R
2
Typ. = 150
Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P tot
T stg
T j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T case
T amb
≤
25
≤
25 o o
C
C
Storage Temperature
Max. Operating Junction Temperature
April 2003
Value
-60
-60
-5
-8
-15
-1
80
2
-65 to 150
150
A
A
A
W
W o
C o
C
Unit
V
V
V
1/5
TIP105
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
o
C/W o
C/W
ELECTRICAL CHARACTERISTICS (T case
= 25 o
C unless otherwise specified)
Symbol Parameter
I
I
I
CEO
CBO
EBO
Collector Cut-off
Current (I
B
= 0)
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
* Collector-Emitter
Saturation Voltage
I
V
V
V
C
CE
CE
EB
Test Conditions
= -30 V
= -60 V
= -5 V
= -30 mA
Min.
-60
Typ.
Max.
-50
-50
-8
Unit
µ
µ
A
A mA
V
I
I
C
= -3 A I
C
= -8 A I
B
B
= -6 mA
= -80 mA
-2
-2.5
-2.8
V h
BE
FE
*
* Base-Emitter Voltage I
C
= -8 A V
CE
= -4 V
DC Current Gain I
C
= -3 A V
CE
= -4 V
I
C
= -8 A V
CE
= -4 V
I
C
= -3 A V
CE
= -4 V
Group R
Group O
Group Y
2000
200
18000
2000
4000
8000
5000
9000
18000
V
F
* Forward Voltage of
Commutation Diode
I
F
= - I
C
= 10 A -2.8
(I
B
= 0)
The product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery datails.
V
V
V
V
Safe Operating Area DC Current Gain
2/5
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
TIP105
3/5
TIP105
DIM.
F1
F2
G
G1
H2
L2
L4
A
C
D
E
F
L5
L6
L7
L9
M
DIA.
TO-220 MECHANICAL DATA
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
mm
TYP.
2.40
10.00
16.40
13.00
2.65
15.25
6.20
3.50
2.60
3.75
14.00
2.95
15.75
6.60
3.93
3.85
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
0.511
0.104
0.600
0.244
0.137
0.147
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
0.202
0.106
0.409
0.645
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
4/5
TIP105
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
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