STP200NF04
STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120 A - 3.3 m
Ω
TO-220/D²PAK/I²PAK
STripFET™II MOSFET
Table 1: General Features
Type
STB200NF04
STB200NF04-1
STP200NF04
V
DSS
40 V
40 V
40 V
R
DS(on)
< 0.0037
Ω
< 0.0037
Ω
< 0.0037
Ω
■
■
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
I
D
120 A
120 A
120 A
Pw
310 W
310 W
310 W
DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 1: Package
TO-220
1
2
3
1
D 2 PAK
1
2
3
I
2
PAK
Figure 2: Internal Schematic Diagram
3
APPLICATIONS
■
HIGH CURRENT, HIGH SWITCHING SPEED
■
AUTOMOTIVE
Table 2: Order Codes
SALES TYPE
STB200NF04T4
STB200NF04-1
STP200NF04
MARKING
B200NF04
B200NF04
P200NF04
PACKAGE
D
2
PAK
I
2
PAK
TO-220
October 2004
PACKAGING
TAPE & REEL
TUBE
TUBE
Rev. 3
1/15
STP200NF04 - STB200NF04 - STB200NF04-1
Table 3: Absolute Maximum ratings
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
(#)
I
D
(#)
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
Drain-gate Voltage (R
GS
Gate- source Voltage
= 0)
= 20 k
Ω
)
Drain Current (continuos) at T
C
Drain Current (continuos) at T
C
Drain Current (pulsed)
= 25°C
= 100°C dv/dt (1)
E
AS
(2)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
T j
T stg
Operating Junction Temperature
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I
SD
≤
120A, di/dt
≤
500A/µs, V
DD
≤
V
(BR)DSS
, T j
≤
T
JMAX.
(2) Starting T j
= 25°C, I d
= 60A, V
DD
=30 V
(#) Current Limited by Package
Table 4: Thermal Data
Value
40
40
± 20
120
120
480
310
2.07
1.5
1.3
-55 to 175
Rthj-case Thermal Resistance Junction-case Max
Rthj-pcb
Rthj-amb
T l
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-ambient (Free air) Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / I
2
PAK / D
2
PAK
0.48
(see Figure 17)
62.5
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
V
(BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I
D
= 250 µA, V
GS
= 0
Min.
40
Typ.
Max.
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
V
GS
= ± 20V
1
10
±100
V
GS(th)
R
DS(on)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 90 A
2
3.3
4
3.7
Unit
V
µA
µA nA
V m
Ω
A
A
A
Unit
V
V
V
W
W/°C
V/ns
J
°C
2/15
STP200NF04 - STB200NF04 - STB200NF04-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol Parameter Test Conditions g fs
(1)
C iss
C oss
C rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 15 V
,
I
D
= 90 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Table 7: Switching On/Off
Symbol Parameter t d(on) t r t d(off) t f
Q g
Q gs
Q gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 20 V, I
D
= 90 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 20)
V
DD
= 20V, I
D
= 120 A,
V
GS
= 10V
(see Figure 23)
Table 8: Source Drain Diode
Symbol Parameter Test Conditions
I
SD
I
SDM
(2)
V
SD
(1)
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage I
SD
= 120 A, V
GS
= 0 t rr
Q rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
I
SD
= 120 A, di/dt = 100A/µs
V
DD
= 30V, T j
= 150°C
(see Figure 21)
Min.
Min.
Typ.
150
5100
1600
600
Max.
Unit
S pF pF pF
Typ.
30
320
140
120
170
30
62
Max.
210
Unit ns ns ns ns nC nC nC
Typ.
Max.
120
480
1.3
85
190
4.5
Unit
A
A
V ns nC
A
3/15
STP200NF04 - STB200NF04 - STB200NF04-1
Figure 3: Safe Operating Area Figure 6: Thermal Impedance
Figure 4: Output Characteristics Figure 7: Transfer Characteristics
Figure 5: Transconductance Figure 8: Static Drain-source On Resistance
4/15
Figure 9: Gate Charge vs Gate-source Voltage
STP200NF04 - STB200NF04 - STB200NF04-1
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temperature
Figure 11: Dource-Drain Diode Forward Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature
5/15
STP200NF04 - STB200NF04 - STB200NF04-1
Figure 15: Thermal Resistance Rthj-a vs PCB
Copper Area
Figure 16: Max Power Dissipation vs PCB Copper Area
6/15
Figure 17: Allowable lav vs. Time in Avalanche
STP200NF04 - STB200NF04 - STB200NF04-1
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive, under the following conditions:
P
D(AVE)
= 0.5 * (1.3 * BV
DSS
* I
AV
)
E
AS(AR)
= P
D(AVE)
* t
AV
Where:
I
AV is the Allowable Current in Avalanche
P
D(AVE)
is the Average Power Dissipation in Avalanche (Single Pulse) t
AV
is the Time in Avalanche
To derate above 25 °C, at fixed I
AV, the following equation must be applied:
I
AV
= 2 * (T jmax
- T
CASE
) / (1.3 * BV
DSS
* Z th
)
Where:
Z th
= K * R th is the value coming from Normalized Thermal Response at fixed pulse width equal to T
AV
.
7/15
STP200NF04 - STB200NF04 - STB200NF04-1
SPICE THERMAL MODEL
Table 9: 6th Order RC Network
Parameter
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
Node
1 - 2
2 - 3
3 - 4
4 - 5
5 - 6
6 - 7
Value
1.4958E-3
3.5074E-2
5.939E-2
9.7411E-2
8.8596E-2
8.2755E-1
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
1 - 2
2 - 3
3 - 4
4 - 5
5 - 6
6 - 7
0.0384
0.0624
0.072
0.0912
0.1008
0.1152
Figure 18: Schematic of 6th Order RC Network
8/15
STP200NF04 - STB200NF04 - STB200NF04-1
Figure 19: Unclamped Inductive Load Test Circuit
Figure 22: Unclamped Inductive Wafeform
Figure 20: Switching Times Test Circuit For
Resistive Load
Figure 23: Gate Charge Test Circuit
Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times
9/15
STP200NF04 - STB200NF04 - STB200NF04-1
DIM.
D
E e e1
F
H1
J1
A b b1 c
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA mm.
TYP MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
16.40
28.90
3.85
2.95
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
10/15
STP200NF04 - STB200NF04 - STB200NF04-1
DIM.
E1
G
L
C2
D
D1
E
L2
L3
M
R
V2
A
A1
A2
B
B2
C
10
4.88
15
1.27
1.4
2.4
0º
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
D
2
PAK MECHANICAL DATA
TO-247 MECHANICAL DATA mm.
TYP MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
8
10.4
0.393
8.5
5.28
15.85
1.4
1.75
3.2
0.192
0.590
0.050
0.055
0.094
0.4
4º inch
TYP.
0.315
0.334
0.015
0.208
0.625
0.055
0.068
0.126
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
1
11/15
STP200NF04 - STB200NF04 - STB200NF04-1
DIM.
L
L1
L2
D e e1
E
A
A1 b b1 c c2
8.95
2.40
4.95
10
13
3.50
1.27
MIN.
4.40
2.40
0.61
1.14
0.49
1.23
TO-262 (I
2
PAK) MECHANICAL DATA
mm.
TYP inch
TYP.
9.35
2.70
5.15
10.40
14
3.93
1.40
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MIN.
0.173
0.094
0.024
0.044
0.019
0.048
0.368
0.106
0.202
0.410
0.551
0.154
0.055
MAX.
0.181
0.107
0.034
0.066
0.027
0.052
12/15
D
2
PAK FOOTPRINT
STP200NF04 - STB200NF04 - STB200NF04-1
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
C
D
A
B
G
N
T
REEL MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
330 12.992
1.5
0.059
12.8
13.2
0.504
0.520
20.2
0795
24.4
26.4
0.960
1.039
100 3.937
30.4
1.197
BASE QTY
1000
BULK QTY
1000
A0
B0
D
P0
P1
P2
R
T
D1
E
F
K0
W
TAPE MECHANICAL DATA
DIM.
mm inch
MIN.
MAX.
MIN.
MAX.
10.5
10.7
0.413
0.421
15.7
15.9
0.618
0.626
1.5
1.6
0.059
0.063
1.59
1.61
0.062
0.063
1.65
1.85
0.065
0.073
11.4
4.8
11.6
5.0
0.449
0.189
0.456
0.197
3.9
4.1
0.153
0.161
11.9
12.1
0.468
0.476
1.9
50
2.1
0.075
1.574
0.082
0.25
0.35
0.0098 0.0137
23.7
24.3
0.933
0.956
* on sales type
13/15
STP200NF04 - STB200NF04 - STB200NF04-1
Table 10: Revision History
Date
28-Sep-2004
11-Oct-2004
Revision
2
3
Description of Changes
New Stylesheet. No Content Change
Final datasheet
14/15
STP200NF04 - STB200NF04 - STB200NF04-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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