®
STPS40L40CT/CW
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
2 x 20 A
40 V
150 °C
0.49 V
FEATURES AND BENEFITS n n n
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters.
Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1
A2
TO-220AB
A1
K
A2
STPS40L40CT
K
TO-247
STPS40L40CW
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
RMS forward current
I
F(AV) Average forward current Tc = 130
°
C
δ
= 0.5
Per diode
Per device
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
I
RRM Repetitive peak reverse current
I
RSM Non repetitive peak reverse current tp = 2 µs square F = 1kHz tp = 100 µs square
P
ARM Repetitive peak avalanche power tp = 1µs Tj = 25°C
T stg Storage temperature range
Tj
Maximum operating junction temperature * dV/dt Critical rate of rise of reverse voltage
Value
40
30
20
40
230
2
3
8100
- 65 to + 150
150
10000
* : dPtot dTj
<
July 2003 - Ed: 7A
1
(
− a ) thermal runaway condition for a diode on its own heatsink
A1
K
Unit
V
A
A
A2
A
A
A
W
°
C
°
C
V/µs
1/5
STPS40L40CT/CW
THERMAL RESISTANCES
Symbol
R th (j-c) Junction to case
Parameter
R th(c)
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R th(j-c)
(Per diode) + P(diode 2) x R th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Value
1.5
0.8
0.1
Unit
°
C/W
°C/W
Symbol
I
V
R
F
*
*
Parameter Tests Conditions
Reverse leakage current Tj = 25
°
C
Tj = 100
°
C
Forward voltage drop Tj = 25
°
C
Tj = 125
°
C
Tj = 25
°
C
Tj = 125
°
C I
I
I
I
V
F
F
F
F
R
= V
RRM
= 20 A
= 20 A
= 40 A
= 40 A
Pulse test : * tp = 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x I
F(AV)
+ 0.0105 I
F
2
(RMS)
Fig. 1: Average forward power dissipation versus average forward current (per diode).
Min.
Typ.
Max.
Unit
0.8
mA
30
0.6
70
0.53
0.42
0.49
0.69
0.7
mA
V
Fig.
2: Average current versus ambient temperature (
δ
= 0.5, per diode).
16
PF(av)(W)
14
12
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
10
δ
= 1
8
6
T
4
2
IF(av) (A)
δ
=tp/T tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24
22
20
18
16
14
12
10
8
6
4
2
0
0
IF(av)(A)
δ
=tp/T
T
25 tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
50
Tamb(°C)
75 100 125 150
Fig. 3: Normalized avalanche power derating versus pulse duration.
1
P (t )
P
ARM
(1µs)
0.1
0.01
0.001
0.01
2/5
0.1
1 10 100 1000
Fig. 4: Normalized avalanche power derating versus junction temperature.
1.2
P (t )
P
ARM
(25°C)
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
STPS40L40CT/CW
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A)
250
225
200
175
150
125
100
75
50
25
0
1E-3
I M t
δ
=0.5
1E-2 t(s)
1E-1
Tc=25°C
Tc=75°C
Tc=125°C
1E+0
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
1.0
Zth(j-c)/Rth(j-c)
0.8
0.6
δ
= 0.5
0.4
δ
= 0.2
δ
= 0.1
0.2
Single pulse
0.0
1E-4 1E-3 tp(s)
1E-2
T
δ
=tp/T
1E-1 tp
1E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
5E+2
IR(mA)
1E+2
Tj=150°C
Tj=125°C
1E+1
Tj=75°C
1E+0
1E-1
1E-2
0 5
Tj=25°C
VR(V)
10 15 20 25 30 35 40
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
5.0
C(nF)
F=1MHz
Tj=25°C
1.0
0.1
1 2 5
VR(V)
10 20 50
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
200
IFM(A)
100
Typical values
Tj=150°C
10
Tj=125°C
Tj=75°C
Tj=25°C
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
3/5
STPS40L40CT/CW
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
REF.
C
A
D
M
E
L7
L2
L4
L5
L6
L7
L9
M
Diam.
F2
G
G1
H2
A
C
D
E
F
F1
DIMENSIONS
Millimeters Inches
Min.
Max.
Min.
Max.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10
4.60
1.32
2.72
0.70
0.88
1.70
0.173
0.181
0.048
0.051
0.094
0.107
0.019
0.027
0.024
0.034
0.044
0.066
1.70
5.15
0.044
0.194
0.066
0.202
2.70
0.094
0.106
10.40
0.393
0.409
13
16.4 typ.
14
0.645 typ.
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
3.50
6.60
3.93
2.6 typ.
3.75
3.85
0.244
0.137
0.259
0.154
0.102 typ.
0.147
0.151
n n n
COOLING METHOD : C
RECOMMENDED TORQUE VALUE : 0.55M.N
MAXIMUM TORQUE VALUE : 0.70 M.N
4/5
STPS40L40CT/CW
PACKAGE MECHANICAL DATA
TO-247
L
L5
V
V
F1
V2
F(x3)
H
G
= =
Dia.
L2 L4
F2
F3
F4
L1
L3
M
D
A
E
DIMENSIONS
REF.
Millimeters Inches
Min.
Typ. Max. Min.
Typ. Max.
A 4.85
D 2.20
E 0.40
F 1.00
F1
F2
F3 2.00
F4 3.00
G
H 15.45
L 19.85
L1 3.70
L2
L3 14.20
L4
L5
M 2.00
V
V2
Dia.
3.55
3.00
2.00
10.90
18.50
34.60
5.50
5°
60°
5.15 0.191
2.60 0.086
0.80 0.015
1.40 0.039
2.40 0.078
3.40 0.118
15.75 0.608
20.15 0.781
4.30 0.145
14.80 0.559
3.00 0.078
3.65 0.139
0.118
0.078
0.429
0.728
1.362
0.216
5°
60°
0.203
0.102
0.031
0.055
0.094
0.133
0.620
0.793
0.169
0.582
0.118
0.143
n n n
COOLING METHOD : C
RECOMMENDED TORQUE VALUE : 0.8M.N
MAXIMUM TORQUE VALUE : 1.0M.N
Ordering type Marking Package
STPS40L40CT STPS40L40CT TO-220AB
STPS40L40CW STPS40L40CW TO-247 n
EPOXY MEETS UL94,V0
Weight
2g
4.4g
Base qty
50
30
Delivery mode
Tube
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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