®
STPS80L60CY
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
2 x 40 A
60 V
150 °C
0.56 V
FEATURES AND BENEFITS
■
■
■
■
■
■
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW FORWARD VOLTAGE DROP
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier suited for CAD computers and servers.
Packaged in Max247, STPS80L60CY is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications.
A1
A2
Max247
K
A1
K
A2
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
RMS forward current
I
F(AV)
Average forward current Tc = 130°C
δ
= 0.5
Per diode
Per device
I
FSM
Surge non repetitive forward current tp = 10 ms sinusoidal
I
RRM
Repetitive peak reverse current
P
ARM
Repetitive peak avalanche power tp = 2 µs square F = 1kHz tp = 1µs Tj = 25°C
T stg
Tj
Storage temperature range
Maximum operating junction temperature * dV/dt Critical rate of rise of reverse voltage
Value
60
56
40
80
400
2
20000
- 55 to + 150
150
10000
* : dPtot dTj
<
July 2003 - Ed: 4A
1
(
− a ) thermal runaway condition for a diode on its own heatsink
Unit
V
A
A
A
A
W
°C
°
C
V/µs
1/4
35
P(W)
30
25
20
15
10
5
0
0
STPS80L60CY
THERMAL RESISTANCES
Symbol
R th (j-c)
Junction to case
Parameter
R th (c)
When the diodes 1 and 2 are used simultaneously :
∆
Tj(diode 1) = P(diode1) x R th(j-c)
(Per diode) + P(diode 2) x R th(c)
Per diode
Total
Coupling
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Value
0.70
0.50
0.3
°
Unit
C/W
Symbol
I
V
R
F
*
*
Parameter Tests conditions
Reverse leakage current Tj = 25°C V
R
= V
RRM
Forward voltage drop
Tj = 125°C
Tj = 25
°
C
Tj = 125°C
Tj = 25
°
C
Tj = 125°C
I
I
F
F
= 40 A
= 80 A
Pulse test : * tp = 380 µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.36 x I
F(AV)
+ 0.005 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
1.8
mA
0.4
0.9
0.57
A
V
0.50
0.56
0.69
0.78
0.77
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient temperature (
δ
= 0.5).
δ
= 0.05
δ
= 0.1
δ
= 0.2
10 20
IF(av)(A)
30
δ
= 0.5
δ
=tp/T
40
T
δ
= 1 tp
50
25
20
15
10
5
0
0
45
IF(av)(A)
40
35
30
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
50
Tamb(°C)
75 100 125 150
Fig. 3: Normalized avalanche power derating versus pulse duration.
1
P (t )
P
ARM
(1µs)
0.1
0.01
0.001
0.01
2/4
0.1
1 10 100 1000
Fig. 4: Normalized avalanche power derating versus junction temperature.
1.2
P (t )
P
ARM
(25°C)
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
STPS80L60CY
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values).
500
IM(A)
450
400
350
300
250
200
150
100
50
I M
0
1.E-03 t
δ
=0.5
1.E-02 t(s)
1.E-01
Tc=25°C
Tc=75°C
Tc=125°C
1.E+00
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
δ
= 0.5
0.5
0.4
0.3
δ
= 0.2
δ = 0.1
0.2
0.1
0.0
1.E-03
Single pulse
1.E-02 tp(s)
1.E-01
δ
=tp/T
T tp
1.E+00
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values).
1.E+03
IR(mA)
Tj=125°C
1.E+02
Tj=100°C
Tj=75°C
1.E+01
Tj=50°C
1.E+00
Tj=25°C
1.E-01
1.E-02
0
VR(V)
5 10 15 20 25 30 35 40 45 50 55 60
Fig. 8: Junction capacitance versus reverse voltage applied (typical values).
100.0
C(pF)
F=1MHz
Vosc=30mV
Tj=25°C
10.0
1.0
0.1
1
VR(V)
10 100
Fig. 9: Forward voltage drop versus forward current.
1000
IFM(A)
100
10
1
0.0
0.2
0.4
Tj=25°C
(Maximum values)
0.6
VFM(V)
0.8
1.0
1.2
1.4
3/4
STPS80L60CY
PACKAGE MECHANICAL DATA
Max247
E A
L1
L b1 e b2 b
A1 c
D
A
A1 b b1 b2 c
D e
E
L
L1
REF.
DIMENSIONS
Millimeters Inches
Min.
4.70
Max.
5.30
Min.
Max.
0.185
0.209
2.20
1.00
2.00
3.00
2.60
1.40
2.40
3.40
0.087
0.038
0.079
0.118
0.102
0.055
0.094
0.133
0.40
0.80
0.016
0.031
19.70
10.30
0.776
0.799
5.35
5.55
0.211
0.219
15.30
15.90
0.602
0.626
14.20
15.20
0.559
0.598
3.70
4.30
0.146
0.169
Ordering type Marking
STPS80L60CY STPS80L60CY
■
EPOXY MEETS UL94,V0
Package
Max247
Weight
4.4g
Base qty
30
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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