®
STTH12003TV
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max) trr (max)
2 x 60 A
300 V
150 °C
1 V
70 ns
A1
A2
K1
K1
K2
A1
K2
FEATURES AND BENEFITS
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulated voltage: 2500 V
RMS
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLIFIED LAYOUT
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.
A2
ISOTOP
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter
V
RRM Repetitive peak reverse voltage
I
F(RMS) RMS forward current
I
F(AV) Average forward current Tc = 85°C
δ
= 0.5
I
FSM
I
RSM
Per diode
Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive peak reverse current tp = 100
µ s square
T stg Storage temperature range
Tj
Maximum operating junction temperature
Value
300
150
60
120
600
5
- 55 to + 150
150
Unit
V
A
A
A
A
°
C
°C
ISOTOP is a registered trademark of STMicroelectronics
October 1999 - Ed: 4D
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STTH12003TV
THERMAL RESISTANCES
Symbol
R th (j-c)
Parameter
Junction to case
R th (c)
When the diodes 1 and 2 are used simultaneously:
∆
Tj (diode 1) = P (diode 1) x R th(j-c)
(per diode) + P (diode 2) x R th(C)
Per diode
Total
Coupling
Value
0.8
0.45
0.1
Unit
°
C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions
I
R
*
Reverse leakage current
V
R
= 300 V Tj = 25
°
C
Tj = 125
°
C
V
F
**
Forward voltage drop I
F
= 60 A Tj = 25
°
C
Tj = 125
°
C
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µ s,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.75 x I
F(AV)
+ 0.0042 x I
F
2
(RMS)
Min.
Typ.
Max.
Unit
120
µ
A
0.12
0.85
1.2
1.25
1 mA
V
RECOVERY CHARACTERISTICS
Symbol trr
S
V
I tfr
FP factor
RM
Tests conditions
I
F
= 0.5 A Irr = 0.25 A I
R
= 1A Tj = 25
°
C
I
F
= 1 A dI
F
/dt = - 50 A/
µ s V
R
= 30 V Tj = 25
°
C
I
F
= 60 A dI
F
/dt = 200 A/
µ s
V
FR
= 1.1 x V
F
max.
Tj = 25
°
C
Tj = 25
°
C
Vcc = 200 V I dI
F
/dt = 200 A/
µ s
F
= 60 A Tj = 125
°
C
Min.
Typ.
Max.
Unit
55 ns
70
600
5 ns
V
0.3
14
-
A
2/5
Fig. 1: Conduction losses versus average current
(per diode).
90
80
70
60
50
40
30
20
10
0
0
P1(W)
10
δ
= 0.05
20
δ = 0.1
30
δ
= 0.2
IF(av) (A)
40
δ
= 0.5
50
δ
=tp/T
60
δ
= 1
T
70 tp
80
STTH12003TV
Fig. 2: Forward voltage drop versus forward current (per diode)
.
600
IFM(A)
Tj=125°C
Typical values
100
Tj=25°C
Maximum values
Tj=125°C
Maximum values
10
VFM(V)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
1.0
Zth(j-c)/Rth(j-c)
0.8
0.6
δ
= 0.5
0.4
δ
= 0.2
δ
= 0.1
0.2
Single pulse
0.0
1E-3 1E-2 tp(s)
1E-1
T
δ
=tp/T
1E+0 tp
1E+1
Fig. 4: Peak reverse recovery current versus dI
F
/dt (90% confidence, per diode).
30
IRM(A)
25
VR=200V
Tj=125°C
20
IF=IF(av)
IF=2*IF(av)
15
10
IF=0.5*IF(av)
5 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dI
F
/dt (90% confidence, per diode).
trr(ns)
200
180
160
VR=200V
Tj=125°C
140
120
100
80
IF=2*IF(av)
IF=IF(av)
60
40
IF=0.5*IF(av)
20 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 6: Softness factor (tb/ta) versus dI
F
/dt (typical values, per diode).
0.6
S factor
0.5
0.4
VR=200V
Tj=125°C
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
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STTH12003TV
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C).
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25 50
S factor
IRM
Tj(°C)
75 100 125
Fig. 8: Transient peak forward voltage versus dI
F
/dt (90% confidence, per diode).
10
VFP(V)
IF=IF(av)
Tj=125°C
8
6
4
2 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 9: Forward recovery time versus dI
F
/dt (90% confidence, per diode).
500 tfr(ns)
400
300
IF=IF(av)
VFR=1.1*VFmax
Tj=125°C
200
100 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
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PACKAGE MECHANICAL DATA
ISOTOP
STTH12003TV
REF.
DIMENSIONS
Millimeters Inches
Min.
Max.
Min.
Max.
A
A1
11.80
12.20
0.465
0.480
8.90
9.10
0.350
0.358
B
C
C2
D
7.8
0.75
1.95
37.80
8.20
0.85
2.05
38.20
0.307
0.030
0.077
1.488
0.323
0.033
0.081
1.504
D1 31.50
31.70
1.240
1.248
E 25.15
25.50
0.990
1.004
E1 23.85
24.15
0.939
0.951
E2 24.80 typ.
0.976 typ.
G 14.90
15.10
0.587
0.594
G1 12.60
12.80
0.496
0.504
G2
F
F1
3.50
4.10
4.60
4.30
4.30
5.00
0.138
0.161
0.181
0.169
0.169
0.197
P
P1
S
4.00
4.30
0.157
0.69
4.00
4.40
0.157
0.173
30.10
30.30
1.185
1.193
Ordering code Marking
STTH12003TV1 STTH12003TV
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL 94,V0
Package
ISOTOP
Weight
27g without screws
Base qty
10 with screws
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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