®
STTH12002TV
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(typ) t rr
(typ)
2 x 60 A
200 V
150 °C
0.73 V
35 ns
A1
A2
K1
K2
FEATURES AND BENEFITS
■
■
■
■
■
■
Suited for welding and high power equipment
Very low forward losses
Low recovery times
High surge current capability
Insulated:
Insulating voltage = 2500 V
RMS
Capacitance < 45 pF
Low leakage current
DESCRIPTION
Dual center tap rectifier suited for welding equipment and high power industrial application.
Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters.
K1
K2
A2
ISOTOP
STTH12002TV1
A1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
Repetitive peak reverse voltage 200 V V
RRM
RMS forward current Per diode 100 A I
F(RMS)
Obsolete Product(s) - Obsolete Product(s)
A
I
FSM
T stg
Surge non repetitive forward current
Storage temperature range tp = 10 ms Sinusoidal per diode 700 A
- 55 + 150 °C
Tj Maximum operating junction temperature 150 °C
February 2004 - Ed: 1
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STTH12002TV
THERMAL PARAMETERS
Symbol
R th (j-c)
Junction to case
Parameter
Per diode
Per device
R th (j-c)
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode1) = P(diode1) x R th(j-c)
(per diode) + P(diode2) x R th(c)
Maximum
0.76
0.43
0.1
Unit
°
C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
I
R
F
*
**
Parameter
Reverse leakage current
Tests conditions
Tj = 25°C
Tj = 125°C
Forward voltage drop Tj = 25°C I
V
F
R
= V
RRM
= 60 A
Tj = 25°C
Tj = 150°C
Tj = 150°C
I
F
= 120 A
I
F
= 60 A
I
F
= 120 A
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
Min.
Typ.
Max.
50
50 500
1.05
1.15
0.73
0.82
0.98
Unit
µA
V
To evaluate the maximum conduction losses use the following equation :
P = 0.66 x I
F(AV)
+ 0.00266 I
F
2
(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
I
RM
V t fr
FP
Parameter
Reverse recovery time
Tj = 25°C
Tests conditions
I
F
= 1 A V
R
= 30V dI
F
/dt = 200 A/µs
Forward recovery time
Forward recovery voltage
Tj = 125°C I
F
= 60 A V
R
= 160V dI
F
/dt = 200 A/µs
Tj = 25°C
Tj = 25°C I
I
F
V
FR
= 1.1 x V
F max
F
= 60 A dI
= 60 A dI
F
F
/dt = 200 A/µs
/dt = 200 A/µs
Min.
Typ.
Max.
Unit
35 43 ns
10.4
2.5
13.5
560
A ns
V
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STTH12002TV
Fig. 1: Peak current versus duty cycle (per diode).
400
350
300
250
200
150
100
50
0
0.0
P = 40W
0.1
0.2
P = 60W
0.3
0.4
δ
0.5
P = 80W
I
M
δ
=tp/T
0.6
0.7
0.8
T tp
0.9
1.0
Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode).
100
80
60
40
20
0
0.2
200
I
FM
(A)
180
160
140
120
0.3
0.4
0.5
0.6
0.7
0.8
V
FM
(V)
0.9
1.0
1.1
1.2
Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode).
200
I
FM
(A)
180
160
140
120
100
80
60
40
20
0
0.2
0.3
0.4
0.5
V
FM
(V)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
1.0
Z th(j-c)
/R th(j-c)
0.1
1.E-03
Single pulse
1.E-02 1.E-01 1.E+00 1.E+01
Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode).
Fig. 5: Reverse recovery charges versus dI
F
/dt
(typical values, per diode).
C(pF)
V
OSC
=30mV
RMS
650
600
550
500
450
Obsolete Product(s) - Obsolete Product(s)
350
300
250
200
150
100
50
0 100
0 50 100 150 200 10 100 1000
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STTH12002TV
100
90
80
70
60
50
40
30
20
10
0
10
Fig. 6: Reverse recovery time versus dI
F
/dt
(typical values, per diode).
Fig. 7: Peak reverse recovery current versus dI
F
/dt
(typical values, per diode).
100 1000
18
I
RM
(A)
16
14
12
10
8
6
4
2
0
10 100 1000
Fig. 8: Dynamic parameters versus junction temperature.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
I
RM
[T ]/Q ;I [T =125°C]
50
I
RM
75
Q rr
100 125 150
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
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STTH12002TV
PACKAGE MECHANICAL DATA
ISOTOP
E1 G 1
P1
D
D 1
B
G
S
F E2
F1
C 2
A
A 1
C
G 2
E
E1
E2
G
G1
G2
F
F1
P
A
A1
B
C
C2
D
D1
E
REF.
DIMENSIONS
Millimeters Inches
Min.
Max.
Min.
Max.
11.80
12.20
0.465
0.480
8.90
7.8
9.10
8.20
0.350
0.358
0.307
0.323
0.75
1.95
0.85
2.05
0.030
0.033
0.077
0.081
37.80
38.20
1.488
1.504
31.50
31.70
1.240
1.248
25.15
25.50
0.990
1.004
23.85
24.15
0.939
0.951
24.80 typ.
0.976 typ.
14.90
15.10
0.587
0.594
12.60
12.80
0.496
0.504
3.50
4.30
0.138
0.169
4.10
4.60
4.00
4.30
5.00
4.30
0.161
0.169
0.181
0.197
0.157
0.69
Ordering code
STTH12002TV1
Marking
STTH12002TV1
Package
ISOTOP
Weight
27 g
(without screws)
Base qty Delivery mode
10
(with screws)
Tube use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not au-
Obsolete Product(s) - Obsolete Product(s)
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All other names are the property of their respective owners.
© 2004 STMicroelectronics - All rights reserved.
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