STB46N30M5
Automotive-grade N-channel 300 V, 53 A, 0.037 Ω typ.,
MDmesh™ V Power MOSFET in a D
2
PAK package
Datasheet
-
production data
Features
TAB
Figure 1. Internal schematic diagram
Order code
STB46N30M5
V
DS
300 V
R
DS(on)
max.
0.04 Ω
• Designed for automotive applications and
AEC-Q101 qualified
• Amongst the best R
DS(on)
* area
• High dv/dt capability
• Excellent switching performance
• Easy to drive
• 100% avalanche tested
I
D
53 A
Applications
•
Switching applications
'7$%
1
3
*
6
$0Y
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Order code
STB46N30M5
Table 1. Device summary
Marking
46N30M5
Packages
D
2
PAK
Packaging
Tape and reel
April 2014
This is information on a product in full production.
DocID026126 Rev 2 1/17 www.st.com
5
6
3
4
1
2
Contents
Contents
STB46N30M5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 DocID026126 Rev 2
STB46N30M5 Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT dv/dt
(2)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Pulse width limited by safe operating area
2.
I
SD
≤
53 A, di/dt
≤
400 A/µs, V
DS(peak)
< V
(BR)DSS,
V
DD
=240 V
Value
± 25
53
34
212
250
15
- 55 to 150
150
Symbol
Table 3. Thermal data
Parameter
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1.
When mounted on 1 inch² FR-4, 2 Oz copper board
Value
0.5
30
Symbol
I
AR
E
AS
Table 4. Thermal data
Parameter
Avalanche current, repetitive or notrepetitive (pulse width limited by T j
max)
Single pulse avalanche energy
(starting T j
= 25°C, I
D
= I
AR
, V
DD
= 50 V)
Value
16
550
Unit
°C/W
°C/W
Unit
A mJ
Unit
A
W
V/ns
°C
°C
V
A
A
DocID026126 Rev 2 3/17
17
Electrical characteristics STB46N30M5
4/17
(T
C
= 25 °C unless otherwise specified).
Symbol Parameter
Table 5. On /off states
Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
(V
GS
= 0)
I
D
= 1 mA
Zero gate voltage drain current (V
GS
= 0)
V
DS
= 300 V
V
DS
= 300 V, T
C
=125 °C
Gate-body leakage current (V
DS
= 0)
V
GS
= ± 25 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 26.5 A
Min.
Typ.
Max.
Unit
300 V
3
1 µA
100 µA
±100 nA
4 5
0.037
0.04
V
Ω
Symbol Parameter
Table 6. Dynamic
Test conditions Min.
Typ.
Max.
Unit
C
C
C iss oss rss
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
= 100 V, f = 1 MHz,
= 0
-
-
-
4240
205
9.5
-
-
pF pF pF
C
C o(tr)
(1) o(er)
(2)
Equivalent capacitance time related
Equivalent capacitance energy related
V
DS
= 0 to 240 V, V
GS
= 0
-
373
202 -
pF pF
R g
Gate input resistance f = 1 MHz, gate DC
Bias = 0, test signal level = 20 mV,
I
D
= 0
1.4
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 240 V, I
= 10 V
(see Figure 16
D
)
= 24 A,
-
-
95
23
37 -
-
-
1.
C o(tr)
is defined as a constant equivalent capacitance giving the same charging time as C increases from 0 to 80% V
DS
.
oss
when V
DS
2.
C o(er)
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DS
.
when V
DS nC nC nC
DocID026126 Rev 2
STB46N30M5 Electrical characteristics
Symbol t d(v) t r(v) t f(i) t c(off)
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 7. Switching times
Test conditions
V
DD
= 240 V, I
D
= 32 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 15
)
Min.
Typ.
Max Unit
-
-
-
-
66
15
24
22.5
-
-
-
ns ns ns ns
Symbol Parameter
Table 8. Source drain diode
Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
I
SD
= 53 A, V
GS
= 0
Q rr
I
RRM t
Q rr rr
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
I
SD
V
= 48 A, di/dt = 100 A/µs
DD
= 60 V (see
Figure 20 )
I
SD
= 48 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 20
)
I
RRM
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
53
212
1.5
223
2.5
23
280
3.9
28
A
A
V ns
μ
C
A ns
μ
C
A
DocID026126 Rev 2 5/17
17
Electrical characteristics STB46N30M5
2.1
I
D
(A)
Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
AM18133v1
100
10
1
0.1
0.1
100
80
60
40
20
0
0
1
5
DS(on)
Operation in this area is
Limited by max R
10
10
Tj=150°C
Tc=25°C
Single pulse
100 V
DS
(V)
15 20
10µs
100µs
1ms
10ms
Figure 4. Output characteristics
AM18134v1
I
D
(A)
V
GS
=10V
140
9V
8V
120
7V
6V
V
DS
(V)
120
100
80
60
Figure 5. Transfer characteristics
AM18135v1
I
D
(A)
140
V
DS
=25V
40
20
0
3 4 5 6 7 8 9 V
GS
(V)
Figure 6. Gate charge vs gate-source voltage
AM18136v1
V
GS
(V)
12
V
DS
V
DD
=240V
I
D
=24A
V
DS
(V)
250
10
200
8
150
6
100
4
2
50
Figure 7. Static drain-source on-resistance
AM18137v1
R
DS(on)
( Ω )
0.04
V
GS
=10V
0.038
0.036
0.034
0.032
0
0 20 40 60 80 100
0
Q g
(nC)
0.03
0 10 20 30 40 50 I
D
(A)
6/17 DocID026126 Rev 2
STB46N30M5 Electrical characteristics
Figure 8. Capacitance variations
C
(pF)
AM18138v1
Figure 9. Output capacitance stored energy
AM18139v1
E oss
(µJ)
10000
10
Ciss
8
1000
6
Coss
100
4
10 Crss
2
1
0.1
1 10 100 V
DS
(V)
Figure 10. Normalized gate threshold voltage vs temperature
$0Y
9 *6WK
QRUP
,
' $
0
0 50 100 150 200 250 300 V
DS
(V)
Figure 11. Normalized on-resistance vs temperature
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5 '6RQ
QRUP
, ' $
9
*6 9
7 &
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm)
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25 0
I
D
= 1mA
25 50 75 100
AM10399v1
T
J
(°C)
7 &
Figure 13. Source-drain diode forward characteristics
$0Y
9 6'
9
7
-
&
7 &
7 &
, 6' $
DocID026126 Rev 2 7/17
17
Electrical characteristics
Figure 14. Switching losses vs gate resistance
(1)
AM18140v1
E (µJ)
Eon
1000
V
DD
=240V
V
GS
=10V
I
D
=32A
800
600
Eoff
400
200
0
0 10 20 30 40
1.
Eon including reverse recovery of a SiC diode
R
G
(
Ω
)
STB46N30M5
8/17 DocID026126 Rev 2
STB46N30M5
3 Test circuits
Test circuits
Figure 15. Switching times test circuit for resistive load
Figure 16. Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k
Ω
V
GS
V
D
R
G
R
L
D.U.T.
2200
μ
F
3.3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ
F
I
G
=CONST
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
AM01468v1
Figure 17. Test circuit for inductive load switching and diode recovery times
47k
Ω
P
W
1k
Ω
AM01469v1
Figure 18. Unclamped inductive load test circuit
25 Ω
G
D
A
D.U.T.
S
B
R
G
A
FAST
DIODE
A
B
B
G
D
S
L=100 μ H
3.3
μ
F
1000
μ
F
V
DD
V i
V
D
I
D
L
2200
μ
F
3.3
μ
F
V
DD
D.U.T.
P w
AM01470v1
Figure 19. Unclamped inductive waveform
V
(BR)DSS
V
D
Id
90%Vds
AM01471v1
Figure 20. Switching time waveform
Concept waveform for Inductive Load Turn-off
90%Id
I
DM
V
DD
I
D
V
DD
Vgs
90%Vgs
Vds
10%Vds
AM01472v1
10%Id
AM05540v1
DocID026126 Rev 2 9/17
17
Package mechanical data
4 Package mechanical data
STB46N30M5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/17 DocID026126 Rev 2
STB46N30M5
Figure 21. D²PAK (TO-263) drawing
Package mechanical data
0079457_T
DocID026126 Rev 2 11/17
17
Dim.
e e1
H
J1
L
L1
L2
R
V2 c c2
D
D1
E
E1
A
A1 b b2
Package mechanical data STB46N30M5
4.88
15
2.49
2.29
1.27
1.30
Table 9. D²PAK (TO-263) mechanical data mm
Typ.
Min.
0.45
1.23
8.95
7.50
10
8.50
4.40
0.03
0.70
1.14
2.54
0.4
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
12/17 DocID026126 Rev 2
STB46N30M5
12.20
Figure 22. D²PAK footprint
(a)
16.90
Package mechanical data
9.75
3.50
1.60
5.08
Footprint a.
All dimension are in millimeters
DocID026126 Rev 2 13/17
17
Packaging mechanical data
5 Packaging mechanical data
T
Top cover tape
Figure 23. Tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
STB46N30M5
F
E
W
User direction of feed
R
Bending radius
AM08852v1
14/17 DocID026126 Rev 2
STB46N30M5
A
REEL DIMENSIONS
D
B
Figure 24. Reel
40mm min.
Access hole
At slot location
C
Packaging mechanical data
T
N
Dim.
P0
P1
P2
R
T
W
D1
E
F
K0
A0
B0
D
Full radius Tape slot in core for tape start 25 mm min.
width
G measured at hub
AM08851v2
Min.
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
Table 10. D²PAK (TO-263) tape and reel mechanical data
Tape Reel mm mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Max.
330
13.2
26.4
30.4
1000
1000
DocID026126 Rev 2 15/17
17
Revision history STB46N30M5
Date
24-Mar-2014
11-Apr-2014
Revision
Table 11. Document revision history
Changes
1
2
Initial release.
– Document status promoted from preliminary data to production data
– Minor text changes
16/17 DocID026126 Rev 2
STB46N30M5
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