STB23NM50N, STF23NM50N
STP23NM50N, STW23NM50N
N-channel 500 V, 0.162
Ω
, 17 A TO-220, TO-220FP, TO-247, D²PAK
MDmesh™ II Power MOSFET
Features
Order codes
V
DSS
(@Tjmax)
R
DS(on) max.
I
D
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
550 V < 0.19 Ω
■
■
■
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
17 A
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
1
TO-220FP
2
3
TO-247
1
2
3
1
2
3
TO-220
1
D²PAK
3
Figure 1.
Internal schematic diagram
'
$
3
!-V
Table 1.
Device summary
Order codes
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
Marking
23NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
May 2011 Doc ID 16913 Rev 4 1/21 www.st.com
21
5
6
3
4
1
2
Contents
Contents
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N Electrical ratings
Table 2.
Absolute maximum ratings
Symbol Parameter
Value
TO-220, D²PAK TO-247 TO-220FP
Unit
V
DS
V
GS
I
D
I
D
I
DM
(2)
P
TOT
V
ISO
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
GS
= 0)
C
C
= 25 °C
= 100 °C
Total dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1 s;T
C
=25 °C)
Peak diode recovery voltage slope
17
11
68
125
500
± 25 dv/dt
(3)
15
T stg
T j
Storage temperature
Max. operating junction temperature
-55 to 150
1.
Limited only by maximum temperature allowed
2.
Pulse width limited by safe operating area
3.
I
SD
≤
17 A, di/dt
≤
400 A/µs, V
DS peak
≤
V
(BR)DSS
, V
DD
= 80% V
(BR)DSS
150
17
(1)
11
(1)
68
(1)
30
2500
A
A
V
V
A
W
V
V/ns
°C
°C
Table 3.
Thermal data
Symbol Parameter
Value
D²PAK TO-247 TO-220 TO-220FP
Unit
1 4.17
°C/W R thj-case
Thermal resistance junction-case max
R thj-pcb
(1)
Thermal resistance junction-pcb minimum footprint
R thj-amb
Thermal resistance junctionambient max
T l
Maximum lead temperature for soldering purpose
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
30
62.5
50
300
62.5
°C/W
°C/W
°C
Table 4.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Doc ID 16913 Rev 4
Value
6
254
Unit
A mJ
3/21
Electrical characteristics STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
(T
CASE
=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating, @125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 8.5 A
Min.
Typ.
Max.
Unit
500 V
1
100
µA
µA
100 nA
2 3 4 V
0.162
0.19
Ω
Table 6.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max. Unit
C
C
C oss
C oss eq.
(1)
Equivalent output capacitance
Q g
Q gs
Q gd
R iss rss g
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
V
V
DS
GS
GS
= 50 V, f = 1 MHz,
= 0
= 0, V
DS
= 0 to 400 V
V
DD
= 400 V, I
D
= 17 A,
V
GS
= 10 V,
(see Figure 18)
f=1 MHz Gate DC Bias=0
Test signal level=20 mV open drain
-
-
-
-
1330
84
4.8
210
45
7
24
4.6
-
-
-
-
1.
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss increases from 0 to 80% V
DS
when V
DS pF pF pF pF nC nC nC
Ω
4/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Table 7.
Symbol t d(on) t r t d(off) t f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Electrical characteristics
Test conditions
V
DD
= 250 V, I
D
= 17 A
R
G
= 4.7 Ω V
GS
= 10 V
(see Figure 17)
Min.
Typ.
Max. Unit
-
6.6
19
71
29
ns ns ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
I
SD
= 17 A, V
GS
= 0
= 17 A, di/dt = 100 A/µs
V
DD
= 60 V
(see Figure 22)
I
SD
= 17 A, di/dt = 100 A/µs
V
DD
= 60 V, T j
= 150 °C
(see Figure 22)
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min Typ.
Max Unit
-
-
17
68
1.5
-
-
286
3700
26
350
4800
27 ns nC
A ns nC
A
A
A
V
Doc ID 16913 Rev 4 5/21
Electrical characteristics STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
2.1 Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
!-V
)
$
!
Figure 3.
Thermal impedance for TO-220,
D²PAK
$3ON
/PER
,IMITEDB
S
S
MS
4J #
4C #
3INGLE
PULSE
MS
6
$3
6
Figure 4.
Safe operating area for TO-220FP Figure 5.
Thermal impedance for TO-220FP
!-V
)
$
!
/PER
,IMITEDB
$3ON S
S
MS
MS
4J #
4C #
3INGLE
PULSE
6 $3 6
Figure 6.
Safe operating area for TO-247
!-V
) $
!
Figure 7.
Thermal impedance for TO-247
$3ON
YMAX2
ATIONINTHISAREAIS
/PER
,IMITEDB
4J #
4C #
3INGLE
PULSE
6 $3 6
S
S
MS
MS
6/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 8.
Output characteristics
) $
!
6
'3
6
!-V
Electrical characteristics
Figure 9.
Transfer characteristics
) $ !
6
$3
6
!-V
6
6
6 $3 6 6 '3 6
Figure 10.
Normalized B
VDSS
vs temperature Figure 11.
Static drain-source on resistance
!-V !-V
"6 $33
NORM
2 $3ON
/HM
) $ M!
6 '3 6
4 * #
Figure 12.
Gate charge vs gate-source voltage Figure 13.
Capacitance variations
!-V
6 '3
6
6 $3
6
$$
6
#
P&
) $ !
) $ !
!-V
#ISS
1 G N#
#OSS
#RSS
6 $3 6
Doc ID 16913 Rev 4 7/21
Electrical characteristics STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 14.
Normalized gate threshold voltage vs temperature
!-V
6 '3TH
NORM
)
$
!
Figure 15.
Normalized on resistance vs temperature
!-V
2 $3ON
NORM
) $ !
4 * #
Figure 16.
Source-drain diode forward characteristics
V
S D
(V)
1.4
T
J
=-50°C
AM09169v1
1.2
1.0
T
J
=25°C
T
J
=150°C
0.
8
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 16 1 8 I
S D
(A)
4 * #
8/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
3 Test circuits
Test circuits
Figure 17.
Switching times test circuit for resistive load
Figure 18.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100
Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 19.
Test circuit for inductive load switching and diode recovery times
Figure 20.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 21.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 22.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID 16913 Rev 4 9/21
Package mechanical data
4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Table 9.
TO-220FP mechanical data
Dim.
L5
L6
L7
Dia
G1
H
L2
L3
L4
F
F1
F2
G
D
E
A
B
28.6
9.8
2.9
15.9
9
3
Figure 23.
TO-220FP drawing
Min.
0.75
1.15
1.15
4.95
4.4
2.5
2.5
0.45
2.4
10
L7 mm
Typ.
16
A
B
Di a
L5
L6
D
Package mechanical data
F1 F2
E
Max.
1
1.70
1.70
5.2
4.6
2.7
2.75
0.7
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
H
F
G1
G
L4
L2
L 3
Doc ID 16913 Rev 4
7012510_Rev_K
11/21
Package mechanical data STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
D
D1
E e
A b b1 c e1
F
H1
J1
L
Table 10.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
6.20
2.40
13
3.50
10
2.40
4.95
1.23
3.75
2.65
mm
Typ.
1.27
16.40
28.90
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
12/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 24.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID 16913 Rev 4 13/21
Package mechanical data STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N b2 c
D
E
A
A1 b b1 e
L
L1
L2
∅ P
∅
R
S
Table 11.
TO-247 mechanical data
Dim.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
14.20
3.70
3.55
4.50
mm
Typ.
5.45
18.50
5.50
14.80
4.30
3.65
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
14/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 25.
TO-247 drawing
Package mechanical data
0075 3 25_F
Doc ID 16913 Rev 4 15/21
Package mechanical data STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
E
E1 e e1
H
J1
L
L1
L2
R
V2 c c2
D
D1
A
A1 b b2
Table 12.
D²PAK (TO-263) mechanical data
Dim.
Min.
0.45
1.23
8.95
7.50
4.40
0.03
0.70
1.14
10
8.50
4.88
15
2.49
2.29
1.27
1.30
0° mm
Typ.
2.54
0.4
Max.
4.60
0.23
0.93
1.70
0.60
1.36
9.35
10.40
5.28
15.85
2.69
2.79
1.40
1.75
8°
16/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 26.
D²PAK footprint
(a)
16.90
Package mechanical data
12.20
9.75
Figure 27.
D²PAK (TO-263) drawing
3 .50
1.60
5.0
8
Footprint a.
All dimension are in millimeters
Doc ID 16913 Rev 4
0079457_ S
17/21
Package mechanical data
5
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Package mechanical data
D1
E
F
K0
P0
A0
B0
D
P1
P2
R
T
W
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape mm
Dim.
Dim.
Min.
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
N
T
D
G
A
B
C
Min.
1.5
12.8
20.2
24.4
100
Base qty
Bulk qty
Reel mm
Max.
330
13.2
26.4
30.4
1000
1000
18/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Figure 28.
Tape
T
Top cover t a pe
10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm
P0 D P2
Package mechanical data
K0
F
E
W
B0
A0 P1
U s er direction of feed
D1
R
Figure 29.
Reel
REEL DIMEN S ION S
A
U s er direction of feed
Bending r a di us
AM0 88 52v2
T
D
B
40mm min.
Acce ss hole
At s l ot loc a tion
C
N
F u ll r a di us
Doc ID 16913 Rev 4
T a pe s lot in core for t a pe s t a rt 25 mm min.
width
G me asu red a t h ub
AM0 88 51v2
19/21
Revision history STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Table 14.
Document revision history
Date Revision
11-Dec-2009
26-May-2010
16-Sep-2010
23-May-2011
1
2
3
4
Changes
First release.
Document status promoted from preliminary data to datasheet.
Added new value in Figure 14
,
Figure 15 and
Figure 10 .
Section 2.1: Electrical characteristics (curves) has been
updated.
20/21 Doc ID 16913 Rev 4
STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
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Doc ID 16913 Rev 4 21/21
