STH45N60DM6-7
N-channel 600 V, 0.084
Ω typ., 29 A MDmesh™ DM6
Power MOSFET in an H²PAK-7 package
Datasheet - preliminary data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
STH45N60DM6-7 600 V 0.099 Ω 29 A
Fast-recovery body diode
Lower R
DS(on)
x area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Q rr
), recovery time (t rr
) and excellent improvement in R
DS(on)
* area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.
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Order code Marking Package Packing
STH45N60DM6-7 45N60DM6 H²PAK-7 Tape and reel
February 2017 DocID029454 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/15 www.st.com
Contents
Contents
STH45N60DM6-7
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ..................................................................................... 8
4 Package information ....................................................................... 9
4.1
4.2
H²PAK-7 package information ........................................................... 9
H²PAK-7 packing information .......................................................... 12
5 Revision history ............................................................................ 14
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Electrical ratings STH45N60DM6-7
1 Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
D
(1)
P
TOT
dv/dt (2) dv/dt (3)
T
J
T stg
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
Value
±25
29
18
103
210
50
100
-55 to 150 °C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 29 A, di/dt ≤ 800 A/μs; V
DS peak
< V
(BR)DSS
, V
DD
= 480 V
(3)
V
DS
≤ 480 V
Symbol
Table 3: Thermal data
Parameter
R thj-case
R thj-pcb
Thermal resistance junction-case
Thermal resistance junction-pcb (1)
Value
0.6
30
Unit
°C/W
Notes:
(1)
When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol
Table 4: Avalanche characteristics
Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive
(pulse width limited by T jmax
)
6 A
E
AS
Single pulse avalanche energy
(starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 100 V)
630
Obsolete Product(s) - Obsolete Product(s) mJ
Unit
V
A
A
A
W
V/ns
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STH45N60DM6-7 Electrical characteristics
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol Parameter
Table 5: On/off-state
Test conditions
V
(BR)DSS
I
DSS
Drain-source breakdown voltage
V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C (1)
Gate body leakage current V
DS
= 0 V, V
GS
= ±25 V I
GSS
V
GS(th)
Gate threshold voltage
R
DS(on)
Static drain-source onresistance
V
V
DS
GS
= V
GS
, I
D
= 10 V, I
= 250 µA
D
= 14.5 A
Min. Typ. Max. Unit
600 V
1 µA
100 µA
4
±5
5
µA
V
0.084 0.099 Ω
3
Notes:
(1)
Defined by design, not subject to production test.
Symbol Parameter
Table 6: Dynamic
Test conditions
C iss
C oss
C rss
C oss
eq.
(1)
R
G
Q g
Q gs
Q gd
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= 0 to 480 V, V
GS
= 0 V f = 1 MHz open drain
V
DD
= 480 V, I
D
= 29 A,
V
GS
= 0 to 10 V
(see Figure 14: "Test circuit for gate charge behavior" )
Min. Typ. Max. Unit
-
-
1960
140
-
- pF pF
-
-
-
-
-
-
2
335
1.5
46
13
22
-
-
-
-
-
- pF pF
Ω nC nC nC
Notes:
(1)
C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS increases from 0 to 80% V
DSS
.
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Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on)
Turn-on delay time t r
Rise time t d(off)
Turn-off delay time t f
Fall time
V
DD
= 300 V, I
D
= 14.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform" )
-
-
-
-
16
5.3
50
7
-
-
-
- ns ns ns ns
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STH45N60DM6-7
Symbol
I
SD
Source-drain current
I
SDM
(1)
Source-drain current
(pulsed)
V
SD
(2)
Forward on voltage t rr
Q rr
Reverse recovery time
Reverse recovery charge
I
RRM
Parameter
Table 8: Source-drain diode
Test conditions
Reverse recovery current
I
SD
= 29 A, V
GS
= 0 V
I
SD
= 29 A, di/dt = 100 A/µs,
V
DD
= 60 V
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
Electrical characteristics
Min. Typ. Max. Unit
- 29 A
- 103 A
-
-
-
110
0.5
1.6 V ns
µC
- 9 A t rr
Q rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 29 A, di/dt = 100 A/µs,
V
DD
= 60 V, T j
= 150 °C
(see Figure 15: "Test circuit for inductive load switching and diode recovery times" )
-
-
-
215
2
17 ns
µC
A
Notes:
(1)
Pulse width limited by safe operating area.
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Symbol
Table 9: Gate-source Zener diode
Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ±1 mA, I
D
= 0 A ±30 - - V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
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Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
STH45N60DM6-7
Figure 3: Thermal impedance
Figure 4: Output characteristics Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
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STH45N60DM6-7
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage vs temperature
Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V
(BR)DSS
vs temperature
Figure 12: Source-drain diode forward characteristics
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Test circuits
3 Test circuits
Figure 13: Test circuit for resistive load switching times
STH45N60DM6-7
Figure 14: Test circuit for gate charge behavior
Figure 15: Test circuit for inductive load switching and diode recovery times
Figure 16: Unclamped inductive load test circuit
Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform
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STH45N60DM6-7
4
4.1
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
H²PAK-7 package information
Figure 19: H²PAK-7 package outline
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Package information
Dim.
H
H1
L
L1
L2
L3
M
R
V e1 e2
E
F
A
A1
C e
STH45N60DM6-7
Table 10: H²PAK-7 package mechanical data mm
Min.
10.00
7.40
14.75
1.27
4.35
6.85
1.90
0.20
0°
4.30
0.03
1.17
2.34
4.88
7.42
0.45
0.50
Max.
10.40
7.60
15.25
1.40
4.95
7.25
2.50
0.60
8°
4.80
0.20
1.37
2.74
5.28
7.82
0.60
0.70
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STH45N60DM6-7
Figure 20: H²PAK-7 recommended footprint
Package information
Dimensions are in mm.
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Package information
4.2 H²PAK-7 packing information
Figure 21: Tape outline
STH45N60DM6-7
Figure 22: Reel outline
T
REE L DIMENS IONS
40 mm min.
Acc ess ho le
At slot location
B
D Obsolete Product(s) - Obsolete Product(s)
C
N
A
G mea sured
At hu b
Full rad ius
Tape slot
In core for
Tape start
12/15 DocID029454 Rev 2
STH45N60DM6-7
Dim.
P1
P2
R
T
W
A0
B0
D
D1
E
F
K0
P0
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
1.65
11.4
4.8
3.9
Tape
Package information
Table 11: Tape and reel mechanical data
Reel mm mm
Dim.
Min. Max. Min. Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
0.35
24.3
A
B
C
D
G
1.5
12.8
20.2
24.4
N
T
100
Base quantity
Bulk quantity
330
13.2
26.4
30.4
1000
1000
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Revision history
5
STH45N60DM6-7
Revision history
Date Revision
Table 12: Document revision history
Changes
13-Jun-2017
23-Feb-2017
1
2
Initial release
Modified title and features on cover page.
Datasheet promoted from target data to preliminary data.
Modified Table 2: "Absolute maximum ratings" , Table 3: "Thermal data" ,
Table 5: "On/off-state" , Table 6: "Dynamic" , Table 7: "Switching times"
and Table 8: "Source-drain diode" .
Added Section 2.1: "Electrical characteristics (curves)".
Minor text changes.
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STH45N60DM6-7
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– All rights reserved
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