STFW69N65M5
STW69N65M5
N-channel 650 V, 0.037 Ω typ., 58 A MDmesh™ V Power MOSFET in TO-3PF and TO-247 packages
Datasheet
−
production data
Features
Order codes V
DSS
@ T
Jmax
R
DS(on)
max I
D
STFW69N65M5
STW69N65M5
710 V < 0.045 Ω 58 A
■
■
■
■
Worldwide best R
DS(on)
* area
Higher V
DSS
rating and high dv/dt capability
Excellent switching performance
100% avalanche tested TO-3PF
1
2
3
TO-247
1
2
3
Applications
■ Switching applications
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Figure 1.
Internal schematic diagram
'
$
3
!-V
Table 1.
Device summary
Order codes
STFW69N65M5
STW69N65M5
Marking
69N65M5
Package
TO-3PF
TO-247
September 2012
This is information on a product in full production.
Doc ID 022906 Rev 2
Packaging
Tube
1/16 www.st.com
16
3
4
5
1
2
Contents
Contents
STFW69N65M5, STW69N65M5
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5 Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
V
GS
I
D
I
D
I
DM
(2)
P
TOT dv/dt
(3)
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
V
ISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t=1s; Tc=25°C)
T stg
T j
Storage temperature
Max. operating junction temperature
1.
Limited by maximum junction temperature.
2.
Pulse width limited by safe operating area
3.
I
SD
≤
58 A, di/dt
≤
DS peak
< V
(BR)DSS,
V
DD
=400 V
Table 3.
Thermal data
Symbol Parameter
Value
TO-3PF
58
(1)
36.5
(1)
232
(1)
79
± 25
15
TO-247
58
36.5
232
330
3500
- 55 to 150
150
R thj-case
Thermal resistance junction-case max
R thj-amb
Thermal resistance junction-ambient max
Table 4.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetetive or not repetetive
(pulse width limited by T jmax
)
Single pulse avalanche energy (starting t j
=25°C,
I d
= I
AR
; V dd
=50)
TO-3PF
1.58
Value
TO-247
0.38
50
Value
12
1410
Unit
°C/W
°C/W
Unit
A mJ
V
°C
°C
Unit
V
A
A
A
W
V/ns
Doc ID 022906 Rev 2 3/16
Electrical characteristics STFW69N65M5, STW69N65M5
(T
C
= 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
V
V
V
DS
DS
GS
= 650 V
= 650 V, T
= ± 25 V
C
=125 °C
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 29 A
Min.
Typ.
Max.
Unit
650
3
1
100
V
µA
µA
± 100 nA
4 5 V
0.037
0.045
Ω
Table 6.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C
C
C
C
C o(tr)
(1) o(er)
(2)
R iss oss rss
G
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
Intrinsic gate resistance
V
V
V
DS
GS
DS
= 100 V, f = 1 MHz,
= 0
= 0 to 520 V, V
GS f = 1 MHz open drain
= 0
-
-
-
-
6420
170
11
536
146
1.2
-
-
-
pF pF pF pF pF
Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
V
DD
GS
= 520 V, I
= 10 V
(see
Figure 18
D
)
= 29 A,
-
143
38
64
-
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss
when
V
DS
increases from 0 to 80% V
DSS
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V
DS
increases from 0 to 80% V
DSS nC nC nC
4/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5 Electrical characteristics
Table 7.
Symbol t d(v) t r(v) t f(i) t c(off)
Switching times
Parameter
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
V
DD
= 400 V, I
D
= 38 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(see Figure 19
and
Figure 22
)
Min.
Typ.
Max Unit
-
102
13.5
10
19
ns ns ns ns
Table 8.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
SD
SD
V
DD
I
SD
= 58 A, V
1.
Pulse width limited by safe operating area.
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
GS
= 0
= 58 A, di/dt = 100 A/µs
= 100 V (see Figure 19
= 58 A, di/dt = 100 A/µs
V
DD
= 100 V, T j
(see Figure 19
)
= 150 °C
)
Min.
Typ.
Max.
Unit
-
-
-
-
480
11
46
592
16
53
58
232
1.5
ns
µC
A ns
µC
A
A
A
V
Doc ID 022906 Rev 2 5/16
Electrical characteristics STFW69N65M5, STW69N65M5
Figure 2.
Safe operating area for TO-3PF
!-V
) $
!
Figure 3.
Thermal impedance for TO-3PF
TO 3 PF
K
δ
=0.5
0.2
/PER
,IMITEDB
$3ON
S
S
MS
MS
10
-1
0.1
0.02
0.05
4J #
4C #
3INLGE
PULSE
0.01
S ingle p u l s e
6 $3 6
10
-2
10
-5
10
-4
10
3
10
-2
10
-1 t p
( s )
Figure 4.
Safe operating area for TO-247
!-V
) $
!
Figure 5.
Thermal impedance for TO-247
S
S
$3ON
/PER
,IMITEDB
4J #
4C #
3INLGE
PULSE
MS
MS
Figure 6.
Output characteristics
) $
!
6
'3
6
6
6 $3 6
!-V
Figure 7.
Transfer characteristics
) $
!
6 $3 6
!-V
6
6/16
6
6 $3 6
Doc ID 022906 Rev 2
6 '3 6
STFW69N65M5, STW69N65M5 Electrical characteristics
Figure 8.
Gate charge vs gate-source voltage Figure 9.
Static drain-source on-resistance
!-V !-V
6 '3
6
2 $3ON
/HM
6 $3
6 $$ 6 6
'3
6 '3 6
) $ !
1 G N#
Figure 10.
Capacitance variations
#
P&
!-V
) $ !
Figure 11.
Output capacitance stored energy
!-V
% OSS
*
#ISS
#OSS
#RSS
6 $3 6 6 $3 6
Figure 12.
Normalized gate threshold voltage vs temperature
V
G S (th)
(norm)
1.10
I
D
=250 µ A
V
D S
=V
G S
AM05459v2
Figure 13.
Normalized on-resistance vs temperature
AM05460v2
R
D S (on)
(norm)
2.1
V
G S
=10V
I
D
=29A
1.9
1.00
1.7
0.90
1.5
1.
3
1.1
0.
8 0
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
0.9
0.7
0.5
-50 -25 0 25 50 75 100 T
J
(°C)
Doc ID 022906 Rev 2 7/16
Electrical characteristics STFW69N65M5, STW69N65M5
Figure 14.
Source-drain diode forward characteristics
V
S D
(V)
T
J
=-50°C
AM05461v1
1.2
Figure 15.
Normalized B
VDSS
vs temperature
V
D S
(norm)
1.0
8
I
D
= 1mA
AM10 3 99v1
1.06
1.0
1.04
0.
8 1.02
T
J
=25°C
0.6
1.00
T
J
=150°C
0.9
8
0.4
0.96
0.2
0
0 10 20 3 0 40 50 I
S D
(A)
0.94
0.92
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 16.
Switching losses vs gate resistance
(1)
%
*
) $ !
6
$$
6
6
'3
6
%ON
!-V
%OFF
1.
Eon including reverse recovery of a SiC diode
2 '
8/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
3 Test circuits
Test circuits
Figure 17.
Switching times test circuit for resistive load
Figure 18.
Gate charge test circuit
6 $$
6 K
N&
K
6 '3
6 $
2 '
2 ,
$54
& &
6 $$
6 I 66 '-!8
)
'
#/.34
& K
$54
6 '
0 7
K
0 7
K
!-V !-V
Figure 19.
Test circuit for inductive load switching and diode recovery times
Figure 20.
Unclamped inductive load test circuit
'
!
$
3
$54
"
2
'
!
&!34
$)/$%
!
"
"
'
$
3
, (
& &
6
$$
6 $
) $
,
&
&
6
$$
6 I $54
Figure 21.
Unclamped inductive waveform
6
"2 $33
6 $
!-V
0
W
!-V
Figure 22.
Switching time waveform
Ind u ctive Lo a d T u rn - off
Id
90 % Vd s 90 % Id t d (v)
) $-
Vg s
90 % Vg s
) $
Vg s (I(t))
6
$$ 6 $$
10 % Id
Vd s
10 % Vd s
!-V t r
(v) t c
(off) t f
(i)
AM05540v1
Doc ID 022906 Rev 2 9/16
Package mechanical data
4 Package mechanical data
STFW69N65M5, STW69N65M5
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
10/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
L
L2
L3
L4
L5
L6
L7
N
R
Dia
E
F
F2
G
G1
H
A
C
D
D1
Table 9.
Dim.
TO-3PF mechanical data
Min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
mm
Typ.
5.45
10
Package mechanical data
Max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
Doc ID 022906 Rev 2 11/16
Package mechanical data
Figure 23.
TO-3PF drawing
L 3
L
A
C
Di a
L2
H
L5
STFW69N65M5, STW69N65M5
D1
D
E
L6
F2( 3 x)
L7
F( 3 x)
G1
G
R
L4
N
76271 3 2_C
12/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5
A
A1 b b1 b2 c
D
L1
L2
∅ P
∅
R
S
E e
L
Table 10.
TO-247 mechanical data
Dim.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
mm.
Typ.
5.45
18.50
5.50
Package mechanical data
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
Doc ID 022906 Rev 2 13/16
Package mechanical data
Figure 24.
TO-247 drawing
STFW69N65M5, STW69N65M5
0075 3 25_G
14/16 Doc ID 022906 Rev 2
STFW69N65M5, STW69N65M5 Revision history
Table 11.
Document revision history
Date Revision
27-Feb-2012
28-Sep-2012
1
2
Changes
First release.
– Modified: note
3 of Table 2 , values in Table 4
, typ. values in
Table 6 ,
7 and 8
– Curves inserted
– Minor text changes
Doc ID 022906 Rev 2 15/16
STFW69N65M5, STW69N65M5
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16/16 Doc ID 022906 Rev 2
