STFW6N120K3, STP6N120K3,
STW6N120K3
N-channel 1200 V, 1.95
Ω
typ., 6 A SuperMESH3™
Power MOSFET in TO-3PF, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes V
DSS
R
DS(on) max
I
D
P tot
STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W
STP6N120K3 1200 V < 2.4 Ω 6 A 150 W
STW6N120K3 1200 V < 2.4 Ω 6 A 150 W
■
■
■
■
■
100% avalanche tested
Extremely large avalanche performance
Gate charge minimized
Very low intrinsic capacitances
Zener-protected
TAB
TO-220
1
2
3
TO-3PF
1
2
3
TO-247
1
2
3
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to
STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Figure 1.
Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Table 1.
Device summary
Order codes
STFW6N120K3
STP6N120K3
STW6N120K3
Marking
6N120K3
Package
TO-3PF
TO-220
TO-247
Packaging
Tube
November 2012
This is information on a product in full production.
Doc ID 15572 Rev 3 1/17 www.st.com
17
3
4
5
1
2
Contents
Contents
STFW6N120K3, STP6N120K3, STW6N120K3
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol Parameter
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Gate- source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
I
AR
E
AS
ESD
V
ISO
Power dissipation at T
C
= 25 °C
Max current during repetitive or single pulse avalanche (pulse width limited by T
JMAX
)
Single pulse avalanche energy (starting
T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Gate-source human body model
(C = 100 pF, R = 1.5 k Ω)
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, T
C
= 25 °C)
Storage temperature T stg
T
J
Operating junction temperature
1.
Pulse width limited by safe operating area
TO-3PF TO-220 TO-247
63
± 30
6
3.8
20
150 150
3500
7
180
6
-55 to 150
Unit
A mJ kV
V
°C
V
A
A
A
W
Table 3.
Symbol
Thermal data
Parameter
R thj-case
R thj-amb
T
J
Thermal resistance junction-case
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Value
Unit
TO-3PF TO-220 TO-247
1.98
50 62.5
0.83
50
°C/W
°C/W
300 °C
Doc ID 15572 Rev 3 3/17
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
(T
C
= 25 °C unless otherwise specified)
Table 4.
Symbol
On / off states
Parameter Test conditions
V
(BR)DSS
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Drain-source breakdown voltage
I
D
= 1 mA, V
GS
= 0
Zero gate voltage drain current (V
GS
= 0)
Gate-body leakage current (V
DS
= 0)
V
V
DS
V
DS
GS
= 1200 V
= 1200 V, T
J
= ± 20 V
= 125 °C
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA
Static drain-source on- resistance
V
GS
= 10 V, I
D
= 2.5 A
Min.
Typ.
Max.
Unit
-
3
-
1200
-
-
-
4
1.95
-
5
2.4
V
1
50
µA
µA
± 10 µA
V
Ω
Table 5.
Symbol
Dynamic
Parameter Test conditions Min.
Typ.
Max.
Unit
C
C
C
C
C iss oss rss o(tr)
(1) o(er)
(2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time related
Equivalent capacitance energy related
V
V
V
V
DS
GS
GS
GS
= 100 V, f = 1 MHz,
= 0
= 0, V
= 0, V
DS
DS
= 0 to 960 V
= 0 to 960 V -
-
-
1050
90
1
40
25 -
-
pF pF pF pF pF
R
G
Intrinsic gate resistance f = 1 MHz open drain 3 Ω
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
= 960 V, I
D
= 10 V
(see
Figure 20 )
= 7.2 A,
-
39
7.7
23.5
-
1.
C oss
eq. time related is defined as a constant equivalent capacitance giving the same charging time as
C oss
when V
DS
increases from 0 to 80% V
DSS.
2.
C oss
eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
C oss
when V
DS
increases from 0 to 80% V
DSS.
nC nC nC
4/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Table 6.
Symbol t d(on) t r t d(off) t f
Switching times on/off
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 600 V, I
D
= 3.6 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 19 )
Min.
Typ.
Max.
Unit
-
30
12
58
32
ns ns ns ns
Table 7.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
I
SD
= 5 A, V
GS
= 0
= 7.2 A, di/dt = 100 A/µs
V
DD
= 60 V T
J
= 25 °C (see
Figure 24
)
I
SD
1.
Pulse width limited by safe operating area.
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
= 7.2 A, di/dt = 100 A/µs
V
DD
= 60 V, T
J
(see Figure 24 )
= 150 °C
Min.
Typ.
Max. Unit
-
-
6
20
1.6
-
-
--
580
7
25
840
9
22
-
ns
µC
A ns
µC
A
A
A
V
Table 8.
Symbol
Gate-source Zener diode
Parameter
V
(BR)GSO
Gate-source breakdown voltage
Test conditions
I
GS
= ± 1 mA (I
D
=0)
Min.
Typ.
Max. Unit
30 V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 15572 Rev 3 5/17
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-3PF
!-V
)
$
!
Figure 3.
Thermal impedance for TO-3PF
TO 3 PF
K
δ
=0.5
0.2
/PER
,IMITEDB
$3ON
4J #
4C #
3INLGE
PULSE
S
S
MS
MS
0.1
10
-1
0.02
0.05
0.01
10
-2
10
-5
S ingle p u l s e
10
-4
10
3
10
-2 6
$3
6
10
-1 t p
( s )
Figure 4.
Safe operating area for TO-220
AM07 3 0 8 v1
I
D
(A)
Figure 5.
Thermal impedance for TO-220
10
1
0.1
0.01
0.1
a b y m s a re a
i s
D
S
(on) a x R
Oper
Limited
1 10
Tj=150°C
Tc=25°C
S inlge p u l s e
100 1000 V
D S
(V)
10 µs
100 µs
1m s
10m s
Figure 6.
Safe operating area for TO-247
AM07 3 09v1
I
D
(A)
Figure 7.
Thermal impedance for TO-247
10
1
0.1
0.01
0.1
a b y m s a re a
i s
D
S
(on) a x R
Oper
Limited
1 10
Tj=150°C
Tc=25°C
S inlge p u l s e
100 1000 V
D S
(V)
10 µs
100 µs
1m s
10m s
6/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3 Electrical characteristics
Figure 8.
Output characteristics
) $
!
6 '3 6
6
6
!-V
Figure 9.
Transfer characteristics
) $
!
6
$3
6
!-V
6
6 $3 6 6 '3 6
Figure 10.
Normalized BV
DSS
vs temperature Figure 11.
Static drain-source on-resistance
AM07911v1 AM07909v1
BV
D SS
(norm)
R
D S (on)
( Ω )
1.10
2.6
V
G S
=10V
1.05
2.2
1.00
1.
8
0.95
1.4
0.90
0.
8 5
-50 0 50 100 T
J
(°C)
1
0.5
1.5
2.5
3 .5
Figure 12.
Output capacitance stored energy Figure 13.
Capacitance variations
!-V
% OSS *
C
(pF)
4.5
I
D
(A)
AM07912v1
Ci ss
1000
6 $3 6
100
Co ss
10
1
0.1
1 10
Cr ss
100 V
D S
(V)
Doc ID 15572 Rev 3 7/17
Electrical characteristics STFW6N120K3, STP6N120K3, STW6N120K3
Figure 14.
Gate charge vs gate-source voltage Figure 15.
Normalized on-resistance vs temperature
6 '3
6
!-V
6 $3
6
R
D S (on)
( Ω )
AM079071v1
6 $3 2.5
V
G S
=10V
2
1.5
1
0.5
1 G N#
0
-75 -25 25 75 125 T
J
(°C)
Figure 16.
Normalized gate threshold voltage vs temperature
!-V
6 '3TH
NORM
Figure 17.
Maximum avalanche energy vs temperature
% !3
M*
!-V
4 * #
Figure 18.
Source-drain diode forward characteristics
6 3$
6
4 * #
!-V
4 * #
4 * #
8/17
) 3$ !
Doc ID 15572 Rev 3
4 * #
STFW6N120K3, STP6N120K3, STW6N120K3
3 Test circuits
Test circuits
Figure 19.
Switching times test circuit for resistive load
Figure 20.
Gate charge test circuit
V
DD
12V
47k
Ω
100nF
1k Ω
V
G S
V
D
R
G
R
L
D.U.T.
2200
μ
F
3 .
3
μ
F
V
DD
V i
=20V=V
GMAX
2200
μ F
I
G
=CON S T
2.7k
Ω
100 Ω
D.U.T.
V
G
P
W
47k
Ω
P
W
1k
Ω
AM0146 8 v1 AM01469v1
Figure 21.
Test circuit for inductive load switching and diode recovery times
Figure 22.
Unclamped inductive load test circuit
25 Ω
G
A
D
D.U.T.
S
B
R
G
A
FA S T
DIODE
A
B
B
G
D
S
L=100 μ H
3 .
3
μ F
1000
μ F
V
DD
V i
V
D
I
D
L
D.U.T.
2200
μ F
3 .
3
μ F
V
DD
P w
AM01470v1
Figure 23.
Unclamped inductive waveform
V
(BR)D SS
V
D
Figure 24.
Switching time waveform t on t off t r td on td off t f
AM01471v1
I
DM
90 %
90 %
10 %
I
D 0
10 % V
D S
V
DD
V
DD
90 %
V
G S
AM01472v1
0
10 %
AM0147 3 v1
Doc ID 15572 Rev 3 9/17
Package mechanical data
4 Package mechanical data
STFW6N120K3, STP6N120K3, STW6N120K3
L
L2
L3
L4
L5
L6
L7
N
R
Dia
E
F
F2
G
G1
H
A
C
D
D1
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
Table 9.
TO-3PF mechanical data
Dim.
mm
Typ.
Min.
5.30
2.80
3.10
1.80
0.80
0.65
1.80
10.30
Max.
5.70
3.20
3.50
2.20
1.10
0.95
2.20
11.50
15.30
9.80
22.80
26.30
43.20
4.30
24.30
14.60
1.80
3.80
3.40
5.45
10
15.70
10.20
23.20
26.70
44.40
4.70
24.70
15
2.20
4.20
3.80
10/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 25.
TO-3PF drawing
L 3
L
A
C
Di a
L2
H
L5
D1
D
Package mechanical data
E
L6
F2( 3 x)
L7
F( 3 x)
G1
G
R
L4
N
76271 3 2_C
Doc ID 15572 Rev 3 11/17
Package mechanical data STFW6N120K3, STP6N120K3, STW6N120K3
D
D1
E e e1
F
H1
J1
L
A b b1 c
Table 10.
TO-220 type A mechanical data
Dim.
Min.
4.40
0.61
1.14
0.48
15.25
L1
L20
L30
∅
P
Q
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
mm
Typ.
1.27
16.40
28.90
3.85
2.95
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
12/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 26.
TO-220 type A drawing
Package mechanical data
00159 88 _typeA_Rev_ S
Doc ID 15572 Rev 3 13/17
Package mechanical data
A
A1 b b1 b2 c
D
L1
L2
∅ P
∅
R
S
E e
L
Table 11.
TO-247 mechanical data
Dim.
Min.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
3.55
4.50
5.30
STFW6N120K3, STP6N120K3, STW6N120K3 mm.
Typ.
5.45
18.50
5.50
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
14/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3
Figure 27.
TO-247 drawing
Package mechanical data
0075 3 25_G
Doc ID 15572 Rev 3 15/17
Revision history STFW6N120K3, STP6N120K3, STW6N120K3
Table 12.
Document revision history
Date Revision
15-Apr-2009
02-Aug-2010
14-Nov-2012
1
2
3
Changes
First release.
Document status promoted from preliminary data to datasheet.
Inserted
Section 2.1: Electrical characteristics (curves) .
Figure 13: Capacitance variations
and Figure 14: Gate charge vs gate-source voltage have been corrected.
Minor text changes.
16/17 Doc ID 15572 Rev 3
STFW6N120K3, STP6N120K3, STW6N120K3
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Doc ID 15572 Rev 3 17/17
