®
STTH8003CY
HIGH FREQUENCY SECONDARY RECTIFIERS
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
V
F
(max) trr (max)
2x40 A
300 V
1 V
60 ns
FEATURES AND BENEFITS n n n
COMBINES HIGHEST RECOVERY AND
VOLTAGE PERFORMANCE.
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY.
HIGH OPERATING TEMPERATURE THANKS
TO LOW LEAKAGE CURRENT.
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in Max247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.
ABSOLUTE RATINGS (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
I
FSM
RSM
T stg
Tj
RMS forward current
Average forward current
Parameter
Repetitive peak reverse voltage
Tc = 105°C
δ
= 0.5
Surge non repetitive forward current
Non repetitive avalanche current
Storage temperature range
Maximum operating junction temperature
Per diode
Per device tp = 10 ms sinusoidal tp = 100
µ s square
Max247
Value
300
50
40
80
400
4
-55 +175
+ 175
A1
K
A2
A
°C
°C
Unit
V
A
A
A
September 2002 - Ed: 3A
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STTH8003CY
THERMAL RESISTANCES
Symbol Parameter
R th (j-c)
Junction to case thermal resistance
R th (c)
Per diode
Total
Coupling
Value
0.8
0.5
0.2
°
Unit
C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
I
R
F
*
**
Parameter
Reverse leakage current
Forward voltage drop I
Tests Conditions
V
R
= 300 V Tj = 25°C
F
= 40 A
Tj = 125°C
Tj = 25
°
C
Tj = 125°C
Min.
Typ.
Max.
Unit
80
µ
A
80 800
0.85
1.25
1
V
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µ s,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I
F(AV)
+ 0.0062 I
F(RMS)
2
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol trr
Tests Conditions
I
F
= 0.5 A Irr = 0.25 A I
R
= 1 A Tj = 25°C
I
F
= 1 A dI
F
/dt = - 50 A/
µ s V
R
= 30 V
Vcc = 200 V I
F
= 40 A d
IF
/dt = -200 A/
µ s Tj = 125°C I
RM
S factor tfr
V
FP
V
I
F
FR
= 40 A dI
= 1.1 x V
F
F
/dt = 200 A/ max
µ s, Tj = 25°C
Min.
Typ.
Max.
Unit
50 ns
60
13
0.3
450
5 ns
V
A
-
2/5
Fig. 1: Conduction losses versus average current
(per diode)
STTH8003CY
Fig. 2: Forward voltage drop versus forward current (per diode)
55
50
45
40
35
30
25
20
15
10
5
0
0
P(W)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
= 1
T
IF(av) (A)
δ
=tp/T tp
5 10 15 20 25 30 35 40 45 50
200
100
IFM(A)
Tj=125°C
Typical values
Tj=125°C
Maximum values
10
VFM(V)
Tj=25°C
Maximum values
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode)
1.0
Zth(j-c)/Rth(j-c)
0.8
0.6
δ
= 0.5
0.4
δ
= 0.2
δ
= 0.1
0.2
Single pulse
0.0
1E-3 1E-2 tp(s)
1E-1
δ
=tp/T
T tp
1E+0
25
IRM(A)
VR=200V
Tj=125°C
20
15
10
IF=IF(av)
IF=2 x IF(av)
IF=0.5 x IF(av)
5 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence, per diode)
Fig. 6: Softness factor (tb/ta) versus dIF/dt
(typical values, per diode) trr(ns)
180
160
140
120
100
80
IF=2 x IF(av)
IF=IF(av)
VR=200V
Tj=125°C
60
40
IF=0.5 x IF(av)
20 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
0.6
S factor
0.5
0.4
VR=200V
Tj=125°C
0.3
0.2
0.1
dIF/dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
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STTH8003CY
Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj = 125°C)
Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25 50
S factor
IRM
Tj(°C)
75 100 125
10
VFP(V)
IF=IF(av)
Tj=125°C
8
6
4
2 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
Fig. 9: Forward recovery time versus dIF/dt
(90% confidence, per diode)
500 tfr(ns)
400
IF=IF(av)
VFR=1.1 x VFmax
Tj=125°C
300
200
100 dIF/dt(A/µs)
0
0 50 100 150 200 250 300 350 400 450 500
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STTH8003CY
PACKAGE MECHANICAL DATA
Max247
E A
L1
L b1 e b2 b
A1 c
D b2 c
D e
E
L
L1
A
A1 b b1
REF.
DIMENSIONS
Millimeters
Min.
Max.
Inches
Min.
Max.
4.70
2.20
1.00
2.00
5.30
2.60
1.40
2.40
0.185
0.087
0.038
0.079
0.209
0.102
0.055
0.094
3.00
0.40
3.40
0.80
0.118
0.133
0.016
0.031
19.70
10.30
0.776
0.799
5.35
5.55
0.211
0.219
15.30
15.90
0.602
0.626
14.20
15.20
0.559
0.598
3.70
4.30
0.146
0.169
Ordering code Marking
STTH8003CY STTH8003CY n n
Cooling method: C
Epoxy meets UL94,V0
Package
Max247
Weight
4.4 g.
Base qty
30
Delivery mode
Tube
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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