STMicroelectronics STM32H7B0VB Datasheet
تبلیغات
تبلیغات
STM32H7B0xB
Datasheet
32-bit Arm
®
Cortex
®
-M7 280 MHz MCUs, 128-Kbyte Flash memory, 1.4-Mbyte
RAM, 46 com. and analog interfaces, SMPS, crypto
FBGA
LQFP64
(10 x 10 mm)
LQFP100
(14 x 14 mm)
LQFP144
(20x20 mm)
LQFP176
(24 x 24 mm)
UFBGA169
(7 x 7 mm)
UFBGA176+25
(10x10 mm)
Product summary
STM32H7B0xB
STM32H7B0AB ,
STM32H7B0IB ,
STM32H7B0RB ,
STM32H7B0ZB ,
STM32H7B0VB
Features
Includes ST state-of-the-art patented technology
Core
• 32-bit Arm ® Cortex ® -M7 core with double-precision FPU and L1 cache:
16 Kbytes of data and 16 Kbytes of instruction cache allowing to fill one cache line in a single access from the 128-bit embedded Flash memory; frequency up to 280 MHz, MPU, 599 DMIPS/ 2.14 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
Memories
• 128 Kbytes of Flash memory plus 1 Kbyte of OTP memory
• ~1.4 Mbytes of RAM: 192 Kbytes of TCM RAM (inc. 64 Kbytes of ITCM RAM +
128 Kbytes of DTCM RAM for time critical routines), 1.18 Mbytes of user SRAM, and 4 Kbytes of SRAM in Backup domain
• 2x Octo-SPI memory interfaces with on-the-fly decryption, I/O multiplexing and support for serial PSRAM/NOR, Hyper RAM/Flash frame formats, running up to
140 MHz in SRD mode and up to 110 MHz in DTR mode
• Flexible external memory controller with up to 32-bit data bus:
– SRAM, PSRAM, NOR Flash memory clocked up to 125 MHz in
Synchronous mode
– SDRAM/LPSDR SDRAM
– 8/16-bit NAND Flash memories
• CRC calculation unit
Security
• ROP, PC-ROP, active tamper, secure firmware upgrade support, Secure access mode
General-purpose input/outputs
• Up to 138 I/O ports with interrupt capability
– Fast I/Os capable of up to 133 MHz
– Up to 164 5-V-tolerant I/Os
Low-power consumption
• Stop: down to 32 µA with full RAM retention
• Standby: 2.8 µA (Backup SRAM OFF, RTC/LSE ON, PDR OFF)
• V
BAT
: 0.8 µA (RTC and LSE ON)
Clock management
• Internal oscillators: 64 MHz HSI, 48 MHz HSI48, 4 MHz CSI, 32 kHz LSI
• External oscillators: 4-50 MHz HSE, 32.768 kHz LSE
• 3× PLLs (1 for the system clock, 2 for kernel clocks) with fractional mode
DS13196 - Rev 6 - May 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
DS13196 - Rev 6
STM32H7B0xB
Reset and power management
• 2 separate power domains, which can be independently clock gated to maximize power efficiency:
– CPU domain (CD) for Arm ® Cortex ® core and its peripherals, which can be independently switched in Retention mode
– Smart run domain (SRD) for reset and clock control, power management and some peripherals
• 1.62 to 3.6 V application supply and I/Os
• POR, PDR, PVD and BOR
• Dedicated USB power embedding a 3.3 V internal regulator to supply the internal PHYs
• Dedicated SDMMC power supply
• High power efficiency SMPS step-down converter regulator to directly supply
V
CORE
or an external circuitry
• Embedded regulator (LDO) with configurable scalable output to supply the digital circuitry
• Voltage scaling in Run and Stop mode
• Backup regulator (~0.9 V)
• Low-power modes: Sleep, Stop and Standby
• V
BAT
battery operating mode with charging capability
• CPU and domain power state monitoring pins
Interconnect matrix
• 3 bus matrices (1 AXI and 2 AHB)
• Bridges (5× AHB2APB, 3× AXI2AHB)
5 DMA controllers to unload the CPU
• 1× high-speed general-purpose master direct memory access controller
(MDMA)
• 2× dual-port DMAs with FIFO and request router capabilities
• 1× basic DMA with request router capabilities
• 1x basic DMA dedicated to DFSDM
Up to 35 communication peripherals
• 4× I2C FM+ interfaces (SMBus/PMBus)
• 5× USART/5x UARTs (ISO7816 interface, LIN, IrDA, modem control) and 1x
LPUART
• 6× SPIs, including 4 with muxed full-duplex I2S audio class accuracy via internal audio PLL or external clock and 1 x SPI/I2S in LP domain (up to 125 MHz)
• 2x SAIs (serial audio interface)
• SPDIFRX interface
• SWPMI single-wire protocol master interface
• MDIO Slave interface
• 2× SD/SDIO/MMC interfaces (up to 133 MHz)
• 2× CAN controllers: 2 with CAN FD, 1 with time-triggered CAN (TT-CAN)
• 1× USB OTG interfaces (1HS/FS)
• HDMI-CEC
• 8- to 14-bit camera interface up to 80 MHz
• 8-/16-bit parallel synchronous data input/output slave interface (PSSI) page 2/199
DS13196 - Rev 6
STM32H7B0xB
11 analog peripherals
• 2× ADCs with 16-bit max. resolution (up to 24 channels, up to 3.6 MSPS)
• 1× analog and 1x digital temperature sensors
• 1× 12-bit single-channel DAC (in SRD domain) + 1× 12-bit dual-channel DAC
• 2× ultra-low-power comparators
• 2× operational amplifiers (8 MHz bandwidth)
• 2× digital filters for sigma delta modulator (DFSDM), 1x with 8 channels/8 filters and 1x in SRD domain with 2 channels/1 filter
Graphics
• LCD-TFT controller up to XGA resolution
• Chrom-ART graphical hardware Accelerator (DMA2D) to reduce CPU load
• Hardware JPEG Codec
• Chrom-GRC
™
(GFXMMU)
Up to 19 timers and 2 watchdogs
• 2× 32-bit timers with up to 4 IC/OC/PWM or pulse counter and quadrature
(incremental) encoder input (up to 280 MHz)
• 2× 16-bit advanced motor control timers (up to 280 MHz)
• 10× 16-bit general-purpose timers (up to 280 MHz)
• 3× 16-bit low-power timers (up to 280 MHz)
• 2× watchdogs (independent and window)
• 1× SysTick timer
• RTC with sub-second accuracy and hardware calendar
Cryptographic acceleration
• AES chaining modes: ECB,CBC,CTR,GCM,CCM for 128, 192 or 256
• HASH (MD5, SHA-1, SHA-2), HMAC
• 2x OTFDEC AES-128 in CTR mode for Octo-SPI memory encryption/decryption
• 1x 32-bit, NIST SP 800-90B compliant, true random generator
Debug mode
• SWD and JTAG interfaces
• 4 KB Embedded Trace Buffer
96-bit unique ID
All packages are ECOPACK2 compliant page 3/199
1
Note:
STM32H7B0xB
Introduction
Introduction
This datasheet provides the ordering information and mechanical device characteristics of the STM32H7B0xB microcontrollers.
This document should be read in conjunction with the STM32H7B0xB reference manual (RM0455). The reference manual is available from the STMicroelectronics website .
For information on the device errata with respect to the datasheet and reference manual, refer to the
STM32H7B0xB errata sheet (ES0478), available on the STMicroelectronics website .
For information on the Arm ® Cortex from the www.arm.com website
® -M7 core, refer to the Cortex ® -M7 Technical Reference Manual, available
Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
DS13196 - Rev 6 page 4/199
2
STM32H7B0xB
Description
Description
STM32H7B0xB devices are based on the high-performance Arm ® Cortex ® -M7 32-bit RISC core operating at up to 280 MHz. The Cortex ® -M7 core features a floating point unit (FPU) which supports Arm ® double-precision
(IEEE 754 compliant) and single-precision data-processing instructions and data types. STM32H7B0xB devices support a full set of DSP instructions and a memory protection unit (MPU) to enhance application security.
STM32H7B0xB devices incorporate high-speed embedded memories with a Flash memory of 128 Kbytes, around
1.4 Mbyte of RAM (including 192 Kbytes of TCM RAM, 1.18 Mbytes of user SRAM and 4 Kbytes of backup
SRAM), as well as an extensive range of enhanced I/Os and peripherals connected to four APB buses, three AHB buses, a 32-bit multi-AHB bus matrix and a multi layer AXI interconnect supporting internal and external memory access.
All the devices offer two ADCs, two DACs (one dual and one single DAC), two ultra-low power comparators, a low-power RTC, 12 general-purpose 16-bit timers, two PWM timers for motor control, three low-power timers, a true random number generator (RNG), and a cryptographic acceleration cell and a HASH processor. The devices support nine digital filters for external sigma delta modulators (DFSDM). They also feature standard and advanced communication interfaces.
• Standard peripherals
– Four I2Cs
– Five USARTs, five UARTs and one LPUART
– Six SPIs, four I2Ss in full-duplex mode. To achieve audio class accuracy, the I 2 S peripherals can be clocked via a dedicated internal audio PLL or via an external clock to allow synchronization.
– Two SAI serial audio interfaces, out of which one with PDM
– One SPDIFRX interface
– One single wire protocol master interface (SWPMI)
– One 16-bit parallel synchronous slave interface (PSSI) sharing the same interface as the digital camera)
– Management Data Input/Output (MDIO) slaves
– Two SDMMC interfaces (one can be supplied from a supply voltage separate from that of all other I/Os)
– A USB OTG high-speed with full-speed capability (with the ULPI)
– One FDCAN plus one TT-CAN interface
– Chrom-ART Accelerator
– HDMI-CEC
• Advanced peripherals including
– A flexible memory control (FMC) interface
– Two octo-SPI memory interface with on-the-fly decryption (OTFDEC)
– A digital camera interface for CMOS sensors (DCMI)
– A graphic memory management unit (GFXMMU)
– An LCD-TFT display controller (LTDC)
– A JPEG hardware compressor/decompressor
Refer to
number.
STM32H7B0xB devices operate in the –40 to +85 °C ambient temperature range from a 1.62 to 3.6 V power supply. The supply voltage can drop down to 1.62 V by using an external power supervisor (see
Section 3.5.2 Power supply supervisor ) and connecting the PDR_ON pin to V
SS
. Otherwise the supply voltage must stay above 1.71 V with the embedded power voltage detector enabled.
The USB OTG_HS/FS interfaces can be supplied either by the integrated USB regulator or through a separate supply input.
A dedicated supply input is available for one of the SDMMC interface for package with more than 100 pins. It allows running from a different voltage level than all other I/Os.
A comprehensive set of power-saving mode allows the design of low-power applications.
The CPU and domain states can be directly monitored on some GPIOs configured as alternate functions.
STM32H7B0xB devices are offers in several packages ranging from 64 pins to 225 pins/balls. The set of included peripherals changes with the device chosen.
DS13196 - Rev 6 page 5/199
STM32H7B0xB
Description
•
•
•
•
•
These features make the STM32H7B0xB microcontrollers suitable for a wide range of applications:
•
•
•
Motor drive and application control
Medical equipment
Industrial applications: PLC, inverters, circuit breakers
Printers, and scanners
Alarm systems, video intercom, and HVAC
Home audio appliances
Mobile applications, Internet of Things
Wearable devices: smart watches.
Figure 1. STM32H7B0xB block diagram shows the general block diagram of the device family.
DS13196 - Rev 6 page 6/199
Peripherals
Flash memory (Kbytes)
SRAM in Kbytes
SRAM on AXI
SRAM on AHB (CD domain)
SRAM on AHB (SRD domain)
TCM RAM in Kbytes
ITCM RAM (instruction)
DTCM RAM (data)
Backup SRAM (Kbytes)
FMC
Interface
NOR Flash memory/RAM controller
Multiplexed I/O NOR Flash memory
16-bit NAND Flash memory
SDRAM controller
Octo-SPI interfaces
General-purpose
Advanced-control (PWM)
Timers
Basic
Low-power
Window watchdog / independent watchdog
Real-time Clock (RTC)
Passive
Tamper pins
Active
Random number generator
Cryptographic accelerator
Hash processor (HASH)
Table 1. STM32H7B0xB features and peripheral counts
x
x x
2
2
1 x x
2
3
2
10
2
2
3
1/1
1
1
1
1 x x
64
128
4
1
128
1024
128
32 x
x
no-SMPS
x
x
1 Octo-SPI
-
-
-
1 Quad-SPI
2
1
no-SMPS
Peripherals
On-the-fly decryption
Communi-cation interfaces for external Octo-SPI memory
SPI/I2S
I2C
USART/UART
/LPUART
SAI/PDM
SPDIFRX
SWPMI
MDIOS
SDMMC
FDCAN/TT-CAN
USB OTG_HS ULPI, OTG_FS
PHY
Digital camera interface/PSSI (10)
LCD-TFT display controller
JPEG Codec
Chrom-ART Accelerator (DMA2D)
Graphic memory management unit (GFXMMU)
HDMI CEC
DFSDM
Number of filters for DFSDM1/DFSDM2
ADCs
8 to 16 bits
Number of channels
DACs
12 bits
Number of channels
Comparators
Operational amplifier
GPIOs
1
24
128
2
6/4
5/5
/1
2/1
4 inputs
2
8/1
2
2
1
24
121
2
6/4
4
5/5
/1
2/1
4 inputs
1
1
2
1/1
1
1/1
1
1
1
1
1
2
8/1
2
20
2
3 (1 single channel + 1 dual-channel interfaces)
2
2
138 112
1
2
5/4
/1
80
4/4
3
/1
/-
1/1
1
1/1
7/1
1
1
49
no-SMPS
Peripherals
Wakeup pins
Maximum CPU frequency (MHz)
SMPS step-down converter
USB internal regulator
USB separate supply pad
VDDMMC separate supply pad
VREF+ separate pad and internal buffer
Operating voltage
Operating temperatures
4
1
1
1
6 4
280
-
-
1
1
-
-
1
1
UFBGA169
Ambient temperature range: −40 to 85 °C
Junction temperature range: −40 to 130 °C (13)
LQFP176 LQFP144
USART, I2C, SPI,
USB-DFU, FDCAN
USART, I2C, SPI,
USB-DFU, FDCAN
LQFP100
USART, I2C, SPI, USB-DFU
Packages
Bootloader
UFBGA176+25
USART, I2C, SPI, USB-
DFU, FDCAN
1. The devices with SMPS correspond to commercial code STM32H7B0xIxxQ.
.
3. To maximize the performance, the I/O high-speed at low-voltage feature (HSLV) must be activated when V
DD
< 2.7 V. This feature is not available on all I/Os (see
Table 87. OCTOSPI characteristics in SDR mode , and
Table 88. OCTOSPI characteristics in DTR mode (with DQS)/Octal and
).
4. The I/O high-speed at low-voltage feature (HSLV) at V
DD
< 2.7 V is not available for OCTOSPIM_P2.
5. A tamper pin can be configured either as passive or active (not both).
6. SPI1, SPI2, SPI3 and SPI6 interfaces give the flexibility to work in an exclusive way in either SPI mode or I2S audio mode.
7. Dedicated I/O supply pad (VDDMMC) or external level shifter are not supported.
8. The ULPI interface is supported. PC2 and PC3 are available on PC2_C and PC3_C, respectively, by closing the internal analog switch (see
Table 7. STM32H7B0xB pin/ball definition ).
9. The ULPI interface is not supported.
10. DCMI and PSSI cannot be used simultaneously since they share the same circuitry.
11. For limitations on fast pads or channels depending on packages, check to the available pins/balls in
Table 7. STM32H7B0xB pin/ball definition .
12. V
DD
/V
DDA
pin to V
SS
. Otherwise the supply voltage must stay above 1.71 V with the embedded power voltage detector enabled.
13. The junction temperature is limited to 105 °C in VOS0 voltage range.
-
LQFP64
STM32H7B0xB
Figure 1. STM32H7B0xB block diagram
SDMMC_D[7:0],SDMMC_D[7:3,1]Dir
SDMMC_D0dir, SDMMC_D2dir
CMD, CMDdir, CK, Ckin,
CKio as AF
HSYNC, VSYNC, PIXCLK, D[13:0]
PDCK, DE, RDY, D[15:0]
DFSDM_CKOUT,
DFSDM_DATAIN[7:0],
DFSDM_CKIN[7:0]
SD, SCK, FS, MCLK, PDM_D[3:1],
PDM_CK[2:1] as AF
SD, SCK, FS, MCLK, AF
MOSI, MISO, SCK, NSS /
SDO, SDI, CK, WS, MCK, as AF
MOSI, MISO, SCK, NSS as AF
MOSI, MISO, SCK, NSS as AF
RX, TX, SCK, CTS, RTS as AF
RX, TX, SCK, CTS, RTS as AF
RX, TX as AF
RX, TX, SCK, CTS, RTS as AF
2 compl. chan.(TIM15_CH1[1:2]N),
2 chan. (TIM_CH15[1:2], BKIN as AF
1 compl. chan.(TIM16_CH1N),
1 chan. (TIM16_CH1, BKIN as AF
1 compl. chan.(TIM17_CH1N),
1 chan. (TIM17_CH1, BKIN as AF
4 compl. chan. (TIM1_CH1[1:4]N),
4 chan. (TIM1_CH1[1:4]ETR, BKIN as AF
4 compl. chan. (TIM1_CH1[1:4]N),
4 chan. (TIM1_CH1[1:4]ETR, BKIN as AF
PA..I[15:0]
JTRST, JTDI,
JTCK/SWCLK
JTDO/SWD, JTDO
TRACECK
TRACED[3:0]
LCD_R[7:0], LCD_G[7:0],
LCD_B[7:0], LCD_HSYNC,
LCD_VSYNC, LCD_DE, LCD_CLK
DFSDM_CKOUT,
DFSDM_DATAIN[1:0],
DFSDM_CKIN[1:0]
COMPx_INP, COMPx_INM,
COMPx_OUT as AF
DAC2_OUT1 as AF
LPTIM2_OUT as AF
LPTIM3_OUT as AF
SCL, SDA, SMBAL as AF
MOSI, MISO, SCK, NSS /
SDO, SDI, CK, WS, MCK, as AF
RX, TX, CK, CTS, RTS as AF
VREF+
To APB1-2 peripherals
DP, DM, ID,
VBUS
SDMMC_
D[7:0],
CMD, CK as AF
D-TCM
64KB
D-TCM
64KB
CPU_AHBP
AHB1
DMA1 DMA2
AHB2
I-TCM
64KB
D-Cache
16KB
AHBS
AXI/AHB12 (280 MHz)
8 Stream
FIFOs
8 Stream
FIFOs
PHY
OTG_FS SDMMC2 BDMA1 8ch for DFSDM
JTAG/SW
ETM
ARM CPU
Cortex-M7
280 MHz
I-Cache
16KB
MDMA
CHROM-ART
(DMA2D)
LCD-TFT
AHBP
AXIM
16 Streams
FIFO
FIFO
FIFO
128 KB
FLASH
256 KB
AXI_SRAM1
384 KB
AXI_SRAM2
384 KB
AXI_SRAM3
FMC
FMC_signals
OCTOSPI1_signals
DMA/
FIFO
32-bit AHB BUS-MATRIX
DMA
Mux1
CRC
RNG
HSEM
HASH
3DES/AES
DB-SDMMC2
FIFO
AHB_SRAM1
64 KB
AHB_SRAM2
64 KB
AHB/APB
ADC1
ADC2
Analog Temp Sensor
32b
TIM2
TIM3
Up to 20 analog inputs
Some inputs are common to ADC1&2
Up to 20 analog inputs
4 channels, ETR as AF
WWDG
AHB/APB
JPEG
AHB3 (280 MHz)
SDMMC1 FIFO
OCTOSPI2_signals
DB-SDMMC1
DB-OCTOSPI1
DB-OCTOSPI2
AXI/AHB34 (280 MHz) AHB3
16b
16b
32b
16b
TIM4
TIM5
TIM12
4 channels, ETR as AF
4 channels, ETR as AF
4 channels
2 channels as AF
DCMI
PSSI
DFSDM1 8ftrs
SAI1/PDM
SAI2
SPI/I2S1
SPI4
SPI5 smcard irDA
USART1 smcard irDA
USART6
UART9 irDA
TIM15
16b
TIM16
16b
TIM17
16b
TIM1/PWM
16b
TIM8/PWM
16b
GPIO PORTA.. I
COMP1&2
DAC2
LPTIM2
16b
LPTIM3
16b
I2C4
SPI6/I2S6
LPUART1
VREF
Vref internal
AHB2 280 MHz (max)
16b
16b
TIM13
TIM14
1 channel as AF
1 channel as AF
AHB/APB AHB1 280 MHz (max) irDA
RX, TX, SCK, CTS,
RTS as AF
RX, TX, SCK
CTS, RTS as AF irDA
DMA
Mux2
BDMA2 DAP
32-bit AHB BUS-MATRIX
32 KB
SRD_SRAM
4 KB
TIM6
TIM7
SWPMI
BKP_SRAM
16b
16b
RAM
I/F
UART4
UART5
UART7
UART8
SPI2/I2S2
SPI3/I2S3
I2C1/SMBUS
I2C2/SMBUS
I2C3/SMBUS
MDIOS
TT-FDCAN1
FDCAN2
CRS
SPIF-RX1
HDMI-CEC
DAC1
DAC
DAC
LPTIM1
16b
RX, TX as AF
RX, TX as AF
RX, TX as AF
RX, TX as AF
MOSI, MISO, SCK, NSS /
SDO, SDI, CK, WS, MCK, as AF
MOSI, MISO, SCK, NSS /
SDO, SDI, CK, WS, MCK, as AF
SCL, SDA, SMBAL as AF
SCL, SDA, SMBAL as AF
SCL, SDA, SMBAL as AF
MDC, MDIO
TX, RX
TX, RX
SYNC
SPDIFRX[3:0] as AF
HDMI_CEC as AF
AHB4 280 MHz (max) DAC1_OUT1 as AF
DAC1_OUT2 as AF
LPTIM1_IN1, LPTIM1_IN2,
LPTIM2_OUT as AF
OPAMP1&2
OPAMPx_VINM
OPAMPx_VINP
Digital Temp Sensor
IWDG
Tamper monitor
RCC
Reset &
Clock
Control
AHB/
APB
VDD12
@VDD33
BBgen + POWER MNGT
Voltage regulator
3.3 to 1.2V
Temp
Monitor
SMPS
Step-down converter
USB regulator
Vbat charging
OPAMPx_VOUT as AF
VDD
VDDMMC
VSS
VCAP, VDDLDO
VDDSMPS, VSSSMPS
VLXSMPS, VFBSMPS
VDD50USB
VDD33USB
APB4 140 MHz (max) VBAT
SYSCFG
EXTI WKUP
CSI
HSI
@VDD
CSI RC 4MHz
PLL1+PLL2+PLL3
HSI RC 64MHz
@VSW
VDD
LSE XTAL 32 kHz
Backup registers
AWU
RTC
@VDD
HSE XTAL OSC
4 - 48MHz
WDG_LS_D1
OSC32_IN
OSC32_OUT
RTC_TS
RTC_TAMP[1:3]
RTC_OUT
RTC_REFIN
OSC_IN
OSC_OUT
HSI48 HSI48 RC 48MHz
MCO1
MCO2
LSI LSI RC 32kHz reset
Int
@VDD
SUPPLY SUPERVISION
POR/PDR/BOR
PVD
NRESET
WKUP[6:1]
DS13196 - Rev 6 page 10/199
3
3.1
Note:
3.2
3.3
3.3.1
STM32H7B0xB
Functional overview
Functional overview
Arm
®
Cortex
®
-M7 with FPU
The Arm ® Cortex ® -M7 with double-precision FPU processor is the latest generation of Arm processors for embedded systems. It was developed to provide a low-cost platform that meets the needs of MCU implementation, with a reduced pin count and optimized power consumption, while delivering outstanding computational performance and low interrupt latency.
The Cortex ® -M7 processor is a highly efficient high-performance featuring:
•
•
•
•
•
Six-stage dual-issue pipeline
Dynamic branch prediction
Harvard architecture with L1 caches (16 Kbytes of I-cache and 16 Kbytes of D-cache)
64-bit AXI4 interface
64-bit ITCM interface
• 2x32-bit DTCM interfaces
The following memory interfaces are supported:
•
•
•
•
Separate Instruction and Data buses (Harvard Architecture) to optimize CPU latency
Tightly Coupled Memory (TCM) interface designed for fast and deterministic SRAM accesses
AXI Bus interface to optimize Burst transfers
Dedicated low-latency AHB-Lite peripheral bus (AHBP) to connect to peripherals.
The processor supports a set of DSP instructions which allow efficient signal processing and complex algorithm execution.
It also supports single and double precision FPU (floating point unit) speeds up software development by using metalanguage development tools, while avoiding saturation.
Refer to
Figure 1. STM32H7B0xB block diagram
for the general block diagram of the STM32H7B0xB family.
Cortex ® -M7 with FPU core is binary compatible with the Cortex ® -M4 core.
Memory protection unit (MPU)
The memory protection unit (MPU) manages the CPU access rights and the attributes of the system resources.
It has to be programmed and enabled before use. Its main purposes are to prevent an untrusted user program to accidentally corrupt data used by the OS and/or by a privileged task, but also to protect data processes or read-protect memory regions.
The MPU defines access rules for privileged accesses and user program accesses. It allows defining up to 16 protected regions that can in turn be divided into up to 8 independent subregions, where region address, size, and attributes can be configured. The protection area ranges from 32 bytes to 4 Gbytes of addressable memory.
When an unauthorized access is performed, a memory management exception is generated.
Memories
Embedded Flash memory
The STM32H7B0xB devices embed up to 128 Kbytes of Flash memory that can be used for storing programs and data.
The Flash memory is organized as 137-bit Flash words memory that can be used for storing both code and data constants. Each word consists of:
•
•
•
•
One Flash word (4 words, 16 bytes or 128 bits)
9 ECC bits.
The Flash memory is organized as follows:
• 128 Kbytes of user Flash memory, containing 16 user sectors of 8 Kbytes each
128 Kbytes of System Flash memory from which the device can boot.
1 Kbyte of OTP (one-time programmable) memory containing option bytes for user configuration.
DS13196 - Rev 6 page 11/199
3.3.2
3.3.3
3.4
STM32H7B0xB
Boot modes
Secure access mode
In addition to other typical memory protection mechanism (RDP, PCROP), STM32H7B0xB devices embed the
Secure access mode, an enhanced security feature. This mode allows developing user-defined secure services by ensuring, on the one hand code and data protection and on the other hand code safe execution.
Two types of secure services are available:
• STMicroelectronics Root Secure Services:
These services are embedded in System memory. They provide a secure solution for firmware and third-party modules installation. These services rely on cryptographic algorithms based on a device unique private key.
• User-defined secure services:
These services are embedded in user Flash memory. Examples of user secure services are proprietary user firmware update solution, secure Flash integrity check or any other sensitive applications that require a high level of protection.
The secure firmware is embedded in specific user Flash memory areas configured through option bytes.
Secure services are executed just after a reset and preempt all other applications to guarantee protected and safe execution. Once executed, the corresponding code and data are no more accessible.
The above secure services are available only for Cortex ® -M7 core operating in Secure access mode. The other masters cannot access the option bytes involved in Secure access mode settings or the Flash secured areas.
Embedded SRAM
All devices feature:
• 1 Mbyte of AXI-SRAM mapped onto AXI bus matrix in CPU domain (CD) split into:
– AXI-SRAM1: 256 Kbytes
– AXI-SRAM2: 384 Kbytes
•
– AXI-SRAM3: 384 Kbytes
128 Kbytes of AHB-RAM mapped onto AHB bus matrix in CPU domain (CD) split into:
– AHB-SRAM1: 64 Kbytes
– AHB-SRAM2: 64 Kbytes
32 Kbytes of SRD-SRAM mapped in Smart Run Domain (SRD) •
• 4 Kbytes of backup SRAM
The content of this area is protected against possible unwanted write accesses, and is retained in Standby or
V
BAT
mode.
• RAM mapped to TCM interface (ITCM and DTCM):
Both ITCM and DTCM RAMs are 0 wait state memories that are accessible from the CPU or the MDMA (even in
Sleep mode) through a specific AHB slave of the CPU(AHBP).
• 64 Kbytes of ITCM-RAM (instruction RAM)
This RAM is connected to ITCM 64-bit interface designed for execution of critical real-times routines by the CPU.
• 128 Kbytes of DTCM-RAM (2x 64 Kbyte DTCM-RAMs on 2x32-bit DTCM ports)
The DTCM-RAM could be used for critical real-time data, such as interrupt service routines or stack/heap memory. Both DTCM-RAMs can be used in parallel (for load/store operations) thanks to the Cortex ® -M7 dual issue capability.
Boot modes
•
•
At startup, the boot memory space is selected by the BOOT pin and BOOT_ADDx option bytes, allowing to program any boot memory address from 0x0000 0000 to 0x3FFF FFFF which includes:
All Flash address space
All RAM address space: ITCM, DTCM RAMs and SRAMs
• The system memory bootloader
The boot loader is located in non-user System memory. It is used to reprogram the Flash memory through a serial interface (USART, I2C, SPI, USB-DFU, FDCAN). Refer to STM32 microcontroller system memory boot mode application note (AN2606) for details.
DS13196 - Rev 6 page 12/199
3.5
3.5.1
Note:
STM32H7B0xB
Power supply management
Power supply management
Power supply scheme
•
•
•
•
V
DD
= 1.62 to 3.6 V: external power supply for I/Os, provided externally through V
DD
pins.
V
DDLDO
= 1.62 to 3.6 V: supply voltage for the internal regulator supplying V
CORE
V
DDA
= 1.62 to 3.6 V: external analog power supplies for ADC, DAC, Reset blocks, RCs and PLL.
V
DD33USB and V
DD50USB
:
V
DD50USB can be supplied through the USB cable to generate the V
DD33USB
via the USB internal regulator. This allows supporting a V
DD
supply different from 3.3 V.
The USB regulator can be bypassed to supply directly V
DD33USB
if V
DD
= 3.3 V.
•
•
•
V
DDMMC
= 1.62 to 3.6 V external power supply for independent I/Os. V
DDMMC
can be higher than V
DD
.
VDDMMC pin should be tied to VDD when it is not used.
V
BAT
= 1.2 to 3.6 V: power supply for the V
SW
domain when V
DD
is not present.
V
CAP
: V
CORE
supply, which value depends on voltage scaling (0.74 V, 0.9 V, 1.0 V, 1.1 V, 1.2 V or 1.3 V). It is configured through VOS bits in PWR_CR3 register. The V
CORE domain (CD) and the Smart Run Domain (SRD).
domain is split into two domains the CPU
•
•
•
– CD domain containing most of the peripherals and the Arm ® Cortex ® -M7 core
– SRD domain containing some peripherals and the system control.
V
DDSMPS
= 1.62 to 3.6 V: step-down converter power supply
V
LXSMPS
= V
CORE
or 1.8 to 2.5 V: external regulated step-down converter output
V
FBSMPS
= V
CORE
or 1.8 to 2.5 V: external step-down converter feedback voltage sense input
For I/O speed optimization at low V
DD
supply, refer to Section 3.8 General-purpose input/outputs (GPIOs) .
).
During power-up and power-down phases, the following power sequence requirements must be respected (see
Figure 2. Power-up/power-down sequence
):
•
•
When V
DD
is below 1 V, other power supplies (V
DDA
, V
DD33USB
and V
DD50USB
) must remain below V
DD
+
300 mV.
When V
DD
is above 1 V, all power supplies are independent (except for V
DDSMPS
, which must remain at the same level as V
DD
).
During the power-down phase, V
DD
can temporarily become lower than other supplies only if the energy provided to the microcontroller remains below 1 mJ. This allows external decoupling capacitors to be discharged with different time constants during the power-down transient phase.
DS13196 - Rev 6 page 13/199
STM32H7B0xB
Power supply management
Figure 2. Power-up/power-down sequence
V
3.6
V
DDX
(1)
V
DD
3.5.2
V
POR
V
PDR
1
0.3
Power-on
Invalid supply area
Operating mode
V
DDX
< V
DD
+ 300 mV
Power-down
V
DDX
independent from V
DD time
1.
V
DDx
refers to any power supply among V
DDA
, V
DD33USB
and V
DD50USB
.
2.
V
DD
and V
DDSMPS
must be wired together into order to follow the same voltage sequence.
•
•
•
•
•
•
•
Power supply supervisor
The devices have an integrated power-on reset (POR)/ power-down reset (PDR) circuitry coupled with a
Brownout reset (BOR) circuitry:
Power-on reset (POR)
The POR supervisor monitors V
DD
power supply and compares it to a fixed threshold. The devices remain in reset mode when V
DD
is below this threshold,
Power-down reset (PDR)
The PDR supervisor monitors V
DD
power supply. A reset is generated when V threshold.
DD drops below a fixed
The PDR supervisor can be enabled/disabled through PDR_ON pin.
Brownout reset (BOR)
The BOR supervisor monitors V
DD
power supply. Three BOR thresholds (from 2.1 to 2.7 V) can be configured through option bytes. A reset is generated when V
DD
drops below this threshold.
Programmable voltage detector (PVD)
The PVD monitors the V
DD
power supply by comparing it with a threshold selected from a set of predefined values.
It can also monitor the voltage level of the PVD_IN pin by comparing it with an internal V
REFINT
voltage reference level.
Analog voltage detector (AVD)
The AVD monitors the V
DDA values.
power supply by comparing it with a threshold selected from a set of predefined
V
BAT
threshold
The V
BAT
battery voltage level can be monitored by comparing it with two thresholds levels.
Temperature threshold
A dedicated temperature sensor monitors the junction temperature and compare it with two threshold levels.
DS13196 - Rev 6 page 14/199
3.5.3
3.5.4
3.6
STM32H7B0xB
Low-power modes
•
•
Voltage regulator
The same voltage regulator supplies the two power domains (CD and SRD). The CD domain can be independently switched off.
Voltage regulator output can be adjusted according to application needs through six power supply levels:
Run mode (VOS0 to VOS3)
– Scale 0 and scale 1: high performance
– Scale 2: medium performance and consumption
– Scale 3: optimized performance and low-power consumption
Stop mode (SVOS3 to SVOS5)
– Scale 3: peripheral with wakeup from stop mode capabilities (UART, SPI, I2C, LPTIM) are operational
– Scale 4 and 5 where the peripheral with wakeup from Stop mode is disabled
The peripheral functionality is disabled but wakeup from Stop mode is possible through GPIO or asynchronous interrupt.
•
•
SMPS step-down converter
The built-in SMPS step-down converter is a highly power-efficient DC/DC non-linear switching regulator that provides lower power consumption than a conventional voltage regulator (LDO).
The step-down converter can be used to:
Directly supply the V
CORE
domain
– the SMPS step-down converter operating modes follow the device system operating modes (Run,
Stop, Standby).
– the SMPS step-down converter output voltage are set according to the selected VOS and SVOS bits
(voltage scaling)
Provide intermediate voltage level to supply the internal voltage regulator (LDO)
•
– The SMPS step-down converter operating modes follow the device system operating modes (Run,
Stop, Standby).
– The SMPS step-down converter output equals 1.8 V or 2.5 V according to the selected step-down level
Provide an external supply
– The SMPS step-down converter is forced to external operating mode
– The SMPS step-down converter output equals 1.8 V or 2.5 V according to the selected step-down level
The 1.8 V or 2.5 V SMPS step-down converter output voltage imposes a minimum V
DDSMPS
supply of 2.5 V or
3.3 V, respectively. It defines indirectly the minimum V
DD
supply and I/O level.
Low-power modes
There are several ways to reduce power consumption on STM32H7B0xB:
•
•
Decrease dynamic power consumption by slowing down the system clocks even in Run mode and individually clock gating the peripherals that are not used.
Save power consumption when the CPU is idle, by selecting among the available low-power mode according to the user application needs. This allows achieving the best compromise between short startup time, low-power consumption, as well as available wakeup sources.
The devices feature several low-power modes:
•
•
•
System Run with CSleep (CPU clock stopped)
Autonomous with CD domain in DStop (CPU and CPU Domain bus matrix clocks stopped)
Autonomous with CD domain in DStop2 (CPU and CPU Domain bus matrix clocks stopped, CPU domain in retention mode)
•
•
•
System Stop (SRD domain clocks stopped) and CD domain in DStop (CPU and CPU Domain bus matrix clocks stopped)
System Stop (SRD domain clocks stopped) and CD domain in DStop2 (CPU and CPU Domain bus matrix clocks stopped, CPU domain in retention mode)
Standby (System, CD and SRD domains powered down)
DS13196 - Rev 6 page 15/199
3.7
3.7.1
STM32H7B0xB
Reset and clock controller (RCC)
CSleep and CStop low-power modes are entered by the MCU when executing the WFI (Wait for Interrupt) or WFE
(Wait for Event) instructions, or when the SLEEPONEXIT bit of the Cortex ® -M7 core is set after returning from an interrupt service routine.
The CPU domain can enter low-power mode (DStop or DStop2) when the processor, its subsystem and the peripherals allocated in the domain enter low-power mode.
If part of the domain is not in low-power mode, the domain remains in the current mode.
Finally the system can enter Stop or Standby when all EXTI wakeup sources are cleared and the power domains are in DStop or DStop2 mode.
System power mode
Run
Stop
Standby
Table 2. System vs domain low-power mode
CD domain power mode
DRun/DStop/DStop2
DStop/DStop2
Standby
Some GPIO pins can be used to monitor CPU and domain power states:
SRD domain power mode
DRun
DStop
Standby
Table 3. Overview of low-power mode monitoring pins
Power state monitoring pins
PWR_CSLEEP
PWR_CSTOP
PWR_NDSTOP2
Description
CPU clock OFF
CPU domain in low-power mode
CPU domain retention mode selection
Reset and clock controller (RCC)
The clock and reset controller is located in the SRD domain. The RCC manages the generation of all the clocks, as well as the clock gating and the control of the system and peripheral resets. It provides a high flexibility in the choice of clock sources and allows to apply clock ratios to improve the power consumption. In addition, on some communication peripherals that are capable to work with two different clock domains (either a bus interface clock or a kernel peripheral clock), the system frequency can be changed without modifying the baud rate.
Clock management
The devices embed four internal oscillators, two oscillators with external crystal or resonator, two internal oscillators with fast startup time and three PLLs.
The RCC receives the following clock source inputs:
•
•
Internal oscillators:
– 64 MHz HSI clock (1% accuracy)
– 48 MHz RC oscillator
– 4 MHz CSI clock
– 32 kHz LSI clock
External oscillators:
– 4-50 MHz HSE clock
– 32.768 kHz LSE clock
The RCC provides three PLLs: one for system clock, two for kernel clocks.
The system starts on the HSI clock. The user application can then select the clock configuration.
A high precision can be achieved for the 48 MHz clock by using the embedded clock recovery system (CRS). It uses the USB SOF signal, the LSE or an external signal (SYNC) to fine tune the oscillator frequency on-the- fly.
DS13196 - Rev 6 page 16/199
3.7.2
3.8
STM32H7B0xB
General-purpose input/outputs (GPIOs)
•
•
•
•
•
•
•
•
System reset sources
Power-on reset initializes all registers while system reset reinitializes the system except for the debug, part of the
RCC and power controller status registers, as well as the backup power domain.
A system reset is generated in the following cases:
Power-on reset (pwr_por_rst)
Brownout reset
Low level on NRST pin (external reset)
Window watchdog
Independent watchdog
Software reset
Low-power mode security reset
Exit from Standby
General-purpose input/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain, with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down) or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog alternate functions. All GPIOs are high-current-capable and have speed selection to better manage internal noise, power consumption and electromagnetic emission.
After reset, all GPIOs are in Analog mode to reduce power consumption.
The I/O configuration can be locked if needed by following a specific sequence in order to avoid spurious writing to the I/Os registers.
To maximize the performance, the I/O high-speed feature, HSLV, must be activated at low device supply voltage.
This is needed to achieve the performance required for peripherals such as the SDMMC, FMC and OCTOSPI.
The GPIOs are divided into four groups which can be optimized separately (refer to the description of HSLVx bits of SYSCFG_CCCSR register in RM0455).
The I/O high-speed feature must be used only when V
DD
is lower than 2.7 V, and both the HSLV user option bits
(VDDIO_HSLV and VDDMMC_HSLV) and HSLVx bits must be set to enable it (refer to RM0455 for details).
DS13196 - Rev 6 page 17/199
3.9
Bus-interconnect matrix
The devices feature an AXI bus matrix, two AHB bus matrices and bus bridges that allow interconnecting bus masters with bus slaves (see
Figure 3. STM32H7B0xB bus matrix
).
Figure 3. STM32H7B0xB bus matrix
AHBS
CPU
Cortex-M7
I$
16KB
D$
16KB
ITCM
64 Kbytes
DTCM
128 Kbytes
DMA1 DMA2 SDMMC2 USBHS1 BDMA1
SDMMC1 MDMA DMA2D LTDC
AXI to AHB
GFX-MMU
AHB3
APB3
Flash memory
128 Kbytes
FMC
OTFDEC1 OCTOSPI1
OTFDEC2 OCTOSPI2
AXI SRAM1
256 Kbytes
AXI SRAM2
384 Kbytes
AXI SRAM3
384 Kbytes
32-bit AHB bus matrix
CD domain
AHB SRAM1
64 Kbytes
AHB SRAM2 64
Kbytes
AHB1
AHB2
APB1
APB2
64-bit AXI bus matrix
CD domain
Legend
32-bit bus
64-bit bus
Bus multiplexer
TCM
AXI
AHB
APB
Master interface
Slave interface
CD-to-SRD AHB
BDMA2
32-bit AHB bus matrix
SRD domain
AHB4
SRD SRAM
32 Kbytes
Backup
SRAM
4 Kbytes
APB4
3.10
3.11
3.12
3.13
STM32H7B0xB
DMA controllers
DMA controllers
The devices feature five DMA instances to unload CPU activity:
• A master direct memory access (MDMA)
The MDMA is a high-speed DMA controller, which is in charge of all types of memory transfers (peripheral to memory, memory to memory, memory to peripheral), without any CPU action. It features a master AXI interface and a dedicated AHB interface to access Cortex ® -M7 TCM memories.
The MDMA is located in the CD domain. It is able to interface with the other DMA controllers located in this domain to extend the standard DMA capabilities, or can manage peripheral DMA requests directly.
Each of the 16 channels can perform single block transfers, repeated block transfers and linked list transfers.
•
•
Two dual-port DMAs (DMA1, DMA2) located in the CD domain and connected to the AHB matrix, with FIFO and request router capabilities.
One basic DMA (BDMA1) located in the CD domain and connected to the AHB matrix. This DMA is
dedicated to the DFSDM (see Section 3.26 Digital filter for sigma-delta modulators (DFSDM) )
One basic DMA (BDMA2) located in the SRD domain, with request router capabilities.
•
The DMA request router could be considered as an extension of the DMA controller. It routes the DMA peripheral requests to the DMA controller itself. This allowing managing the DMA requests with a high flexibility, maximizing the number of DMA requests that run concurrently, as well as generating DMA requests from peripheral output trigger or DMA event.
Chrom-ART Accelerator (DMA2D)
•
•
The Chrom-Art Accelerator (DMA2D) is a graphical accelerator which offers advanced bit blitting, row data copy and pixel format conversion. It supports the following functions:
Rectangle filling with a fixed color
Rectangle copy
•
•
Rectangle copy with pixel format conversion
Rectangle composition with blending and pixel format conversion
Various image format coding are supported, from indirect 4bpp color mode up to 32bpp direct color. It embeds dedicated memory to store color lookup tables. The DMA2D also supports block based YCbCr to handle JPEG decoder output.
An interrupt can be generated when an operation is complete or at a programmed watermark.
All the operations are fully automatized and are running independently from the CPU or the DMAs.
Chrom-GRC™ (GFXMMU)
The Chrom-GRC ™ is a graphical oriented memory management unit aimed at:
• Optimizing memory usage according to the display shape
•
•
Manage cache linear accesses to the frame buffer
Prefetch data
The display shape is programmable to store only the visible image pixels.
A virtual memory space is provided which is seen by all system masters and can be physically mapped to any system memory.
An interrupt can be generated in case of buffer overflow or memory transfer error.
Nested vectored interrupt controller (NVIC)
•
•
•
•
•
The devices embed a nested vectored interrupt controller which is able to manage 16 priority levels, and handle up to 150 maskable interrupt channels plus the 16 interrupt lines of the Cortex ® -M7 with FPU core.
Closely coupled NVIC gives low-latency interrupt processing
Interrupt entry vector table address passed directly to the core
Allows early processing of interrupts
Processing of late arriving, higher-priority interrupts
Support tail chaining
DS13196 - Rev 6 page 19/199
3.14
3.15
3.16
3.17
STM32H7B0xB
Extended interrupt and event controller (EXTI)
•
•
Processor context automatically saved
Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt latency.
Extended interrupt and event controller (EXTI)
The EXTI controller performs interrupt and event management. In addition, it can wake up the processor, power domains and/or SRD domain from Stop mode.
The EXTI handles up to 89 independent event/interrupt lines split into 28 configurable events and 61 direct events.
Configurable events have dedicated pending flags, active edge selection, and software trigger capable.
Direct events provide interrupts or events from peripherals having a status flag.
Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a programmable polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of verifying the Flash memory integrity. The
CRC calculation unit helps compute a signature of the software during runtime, to be compared with a reference signature generated at link-time and stored at a given memory location.
Flexible memory controller (FMC)
•
•
•
•
•
•
•
The FMC controller main features are the following:
• Interface with static-memory mapped devices including:
– Static random access memory (SRAM)
– NOR Flash memory/OneNAND Flash memory
– PSRAM (4 memory banks)
– NAND Flash memory with ECC hardware to check up to 8 Kbytes of data
Interface with synchronous DRAM (SDRAM/Mobile LPSDR SDRAM) memories
8-,16-,32-bit data bus width
Independent Chip Select control for each memory bank
Independent configuration for each memory bank
Write FIFO
Read FIFO for SDRAM controller
The maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is the FMC kernel clock divided by 2.
Octo-SPI memory interface (OCTOSPI)
The OCTOSPI is a specialized communication interface targeting single, dual, quad or octal SPI memories.
The STM32H7B0xB embeds two separate Octo-SPI interfaces.
Each OCTOSPI instance supports single/dual/quad/octal SPI formats.
Multiplex of single/dual/quad/octal SPI over the same bus can be achieved using the integrated I/O manager.
The OCTOSPI can operate in any of the three following modes:
•
•
•
Indirect mode: all the operations are performed using the OCTOSPI registers
Status-polling mode: the external memory status register is periodically read and an interrupt can be generated in case of flag setting
Memory-mapped mode: the external memory is memory mapped and it is seen by the system as if it was an internal memory supporting both read and write operations.
The OCTOSPI support two frame formats supported by most external serial memories such as serial PSRAMs, serial NOR Flash memories, Hyper RAMs and Hyper Flash memories:
•
•
The classical frame format with the command, address, alternate byte, dummy cycles and data phase
The HyperBus ™ frame format.
DS13196 - Rev 6 page 20/199
3.18
3.19
3.20
3.21
Note:
3.22
STM32H7B0xB
Analog-to-digital converters (ADCs)
Multichip package (MCP) combining any of the above mentioned memory types can also be supported.
Analog-to-digital converters (ADCs)
•
•
The STM32H7B0xB devices embed two analog-to-digital converters, whose resolution can be configured to 16,
14, 12, 10 or 8 bits. Each ADC shares up to 24 external channels, performing conversions in the single-shot or scan mode. In scan mode, automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
Simultaneous sample and hold
Interleaved sample and hold
The ADC can be served by the DMA controller, thus allowing to automatically transfer ADC converted values to a destination location without any software action.
In addition, an analog watchdog feature can accurately monitor the converted voltage of one, some or all selected channels. An interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1, TIM2, TIM3, TIM4, TIM6,
TIM8, TIM15, and LPTIM1 timers.
Analog temperature sensor
The STM32H7B0xB embeds an analog temperature sensor that generates a voltage (V
TS
) that varies linearly with the temperature. This temperature sensor is internally connected to ADC2_IN18. The conversion range is between 1.7 V and 3.6 V. It can measure the device junction temperature ranging from −40 to +125 °C.
The temperature sensor have a good linearity, but it has to be calibrated to obtain a good overall accuracy of the temperature measurement. As the temperature sensor offset varies from chip to chip due to process variation, the uncalibrated internal temperature sensor is suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is individually factory-calibrated by ST. The temperature sensor factory calibration data are stored by ST in the System memory area, which is accessible in read-only mode.
Digital temperature sensor (DTS)
The STM32H7B0xB embeds a sensor that converts the temperature into a square wave which frequency is proportional to the temperature. The PCLK or the LSE clock can be used as reference clock for the measurements. A formula given in the product reference manual (RM0455) allows to calculate the temperature according to the measured frequency stored in the DTS_DR register.
V
BAT
operation
The V
BAT
power domain contains the RTC, the backup registers and the backup SRAM.
To optimize battery duration, this power domain is supplied by V
DD
when available or by the voltage applied on
VBAT pin (when V
DD
supply is not present). V
BAT
power is switched when the PDR detects that V
DD
dropped below the PDR level.
The voltage on the VBAT pin could be provided by an external battery, a supercapacitor or directly by V
DD which case, the V
DD
mode is not functional.
, in
V
BAT
operation is activated when V
DD
is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.
The devices embed an internal V
BAT
battery charging circuitry that can be activated when V
DD
is present.
When the microcontroller is supplied from V
BAT
, external interrupts and RTC alarm/events do not exit it from
V
BAT
operation.
When PDR_ON pin is connected to V
SS
(Internal Reset OFF), the V
BAT
functionality is no more available and
V
BAT
pin should be connected to VDD.
Digital-to-analog converters (DAC)
The devices features one dual-channel DAC (DAC1), located in the CD domain, plus one single-channel DAC
(DAC2), located in the SRD domain.
DS13196 - Rev 6 page 21/199
3.23
3.24
3.25
STM32H7B0xB
Voltage reference buffer (VREFBUF)
The three 12-bit buffered DAC channels can be used to convert three digital signals into three analog voltage signal outputs.
The following feature are supported:
•
•
•
•
•
• three DAC converters: one for each output channel
8-bit or 12-bit monotonic output left or right data alignment in 12-bit mode synchronized update capability noise-wave generation triangular-wave generation
•
•
•
•
Triple DAC channel independent or simultaneous conversions
DMA capability for each channel including DMA underrun error detection external triggers for conversion input voltage reference V
REF+ or internal VREFBUF reference.
The DAC channels are triggered through the timer update outputs that are also connected to different DMA streams.
Voltage reference buffer (VREFBUF)
The built-in voltage reference buffer can be used as voltage reference for ADCs and DACs, as well as voltage reference for external components through the VREF+ pin.
Five different voltages are supported (refer to the reference manual for details).
Ultra-low-power comparators (COMP)
The STM32H7B0xB devices embed two rail-to-rail comparators (COMP1 and COMP2). They feature programmable reference voltage (internal or external), hysteresis and speed (low speed for low-power) as well as selectable output polarity.
The reference voltage can be one of the following:
• An external I/O
•
•
•
•
A DAC output channel
An internal reference voltage or submultiple (1/4, 1/2, 3/4)
The analog temperature sensor
The V
BAT
/4 supply.
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers, and be combined into a window comparator.
Operational amplifiers (OPAMP)
•
•
•
The STM32H7B0xB devices embed two rail-to-rail operational amplifiers (OPAMP1 and OPAMP2) with external or internal follower routing and PGA capability, and two inputs and one output each. These three I/Os can be connected to the external pins, thus enabling any type of external interconnections. The operational amplifiers can be configured internally as a follower, as an amplifier with a non-inverting gain ranging from 2 to 16 or with inverting gain ranging from -1 to -15.
The operational amplifier main features are:
PGA with a non-inverting gain ranging of 2, 4, 8 or 16 or inverting gain ranging of -1, -3, -7 or -15
Up to two positive inputs connected to DAC
Output connected to internal ADC
•
•
•
Low input bias current down to 1 nA
Low input offset voltage down to 1.5 mV
Gain bandwidth up to 8 MHz
The devices embed two operational amplifiers (OPMAP1 and OPAMP2) with two inputs and one output each.
These three I/Os can be connected to the external pins, thus enabling any type of external interconnections. The operational amplifiers can be configured internally as a follower, as an amplifier with a non-inverting gain ranging from 2 to 16 or with inverting gain ranging from -1 to -15.
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STM32H7B0xB
Digital filter for sigma-delta modulators (DFSDM)
Digital filter for sigma-delta modulators (DFSDM)
•
•
•
•
•
•
•
•
The device embeds two DFSDM interfaces:
• DSFDM1
It is located in the CD domain and features eight external digital serial interfaces (channels) and eight digital filters, or alternately eight internal parallel inputs.
• DSFDM2
It is located in the SRD domain. DFSDM2 is a lite version including two external digital serial interfaces
(channels) and one digital filters.
The DFSDM peripherals interface the external Σ∆ modulators to microcontroller and then perform digital filtering of the received data streams (which represent analog value on Σ∆ modulators inputs). DFSDMs can also interface
PDM (Pulse Density Modulation) microphones and perform PDM to PCM conversion and filtering in hardware.
The DFSDMs feature optional parallel data stream inputs from internal ADC peripherals or microcontroller memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆ modulators). DFSDM digital filter modules perform digital processing according user selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripherals support:
• Multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
•
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0..20 MHz
Alternative inputs from eight internal digital parallel channels (up to 16 bit input resolution):
•
•
•
– internal sources: ADC data or memory data streams (DMA)
Digital filter modules with adjustable digital signal processing:
– Sinc x filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
– integrator: oversampling ratio (1..256)
Up to 24-bit output data resolution, signed output data format
Automatic data offset correction (offset stored in register by user)
Continuous or single conversion
Start-of-conversion triggered by:
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM0)
Analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
– input from final output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
Short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
Break signal generation on analog watchdog event or on short circuit detector event
Extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
DMA capability to read the final conversion data
Interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial channel clock absence
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STM32H7B0xB
Digital camera interface (DCMI)
• “Regular” or “injected” conversions:
– “regular” conversions can be requested at any time or even in continuous mode without having any impact on the timing of “injected” conversions
– “injected” conversions for precise timing and with high conversion priority
Digital camera interface (DCMI)
•
•
•
•
•
The devices embed a camera interface that can connect with camera modules and CMOS sensors through an
8-bit to 14-bit parallel interface, to receive video data. The camera interface can achieve a data transfer rate up to
140 Mbyte/s using a 80 MHz pixel clock. It features:
Programmable polarity for the input pixel clock and synchronization signals
Parallel data communication can be 8-, 10-, 12- or 14-bit
Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2 progressive video, RGB
565 progressive video or compressed data (like JPEG)
Supports continuous mode or snapshot (a single frame) mode
Capability to automatically crop the image
Parallel synchronous slave interface (PSSI)
The PSSI is a generic synchronous 8-/16-bit parallel data input/output slave interface. It allows the transmitter to send a data valid signal to indicate when the data is valid, and the receiver to output a flow control signal to indicate when it is ready to sample the data.
The PSSI main features are:
•
•
•
•
Slave mode operation
8- or 16-bit parallel data input or output
8-word (32-byte) FIFO
Data enable (DE) alternate function input and Ready (RDY) alternate function output.
When enabled, these signals can either allow the transmitter to indicate when the data is valid or the receiver to indicate when it is ready to sample the data, or both.
The PSSI shares most of the circuitry with the digital camera interface (DCMI). It thus cannot be used simultaneously with the DCMI.
LCD-TFT display controller (LTDC)
•
•
•
•
•
•
•
•
The LCD-TFT display controller provides a 24-bit parallel digital RGB (Red, Green, Blue) and delivers all signals to interface directly to a broad range of LCD and TFT panels up to XGA (1024x768) resolution with the following features:
2 display layers with dedicated FIFO (64x32-bit)
Color Look-Up table (CLUT) up to 256 colors (256x24-bit) per layer
Up to 8 input color formats selectable per layer
Flexible blending between two layers using alpha value (per pixel or constant)
Flexible programmable parameters for each layer
Color keying (transparency color)
Up to 4 programmable interrupt events
AXI master interface with burst of 16 words
JPEG codec (JPEG)
•
•
•
The JPEG codec can encode and decode a JPEG stream as defined in the
ISO/IEC10918-1 specification. It provides an fast and simple hardware compressor and decompressor of JPEG images with full management of JPEG headers.
The JPEG codec main features are as follows:
8-bit/channel pixel depths
Single clock per pixel encoding and decoding
Support for JPEG header generation and parsing
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STM32H7B0xB
True random number generator (RNG)
•
•
•
•
•
•
•
•
•
•
•
•
Up to four programmable quantization tables
Fully programmable Huffman tables (two AC and two DC)
Fully programmable minimum coded unit (MCU)
Encode/decode support (non simultaneous)
Single clock Huffman coding and decoding
Two-channel interface: Pixel/Compress In, Pixel/Compressed Out
Stallable design
Support for single greyscale component
Ability to enable/disable header processing
Internal register interface
Fully synchronous design
Configuration for high-speed decode mode
True random number generator (RNG)
All devices embed an RNG that delivers 32-bit random numbers generated by an integrated analog circuit. The
RNG is a true random number generator that provides full entropy outputs to the application as 32-bit samples. It is composed of a live entropy source (analog) and an internal conditioning component.
Cryptographic acceleration (CRYP and HASH)
The devices embed a cryptographic processor that supports the advanced cryptographic algorithms usually required to ensure confidentiality, authentication, data integrity and non-repudiation when exchanging messages with a peer:
•
•
Encryption/Decryption
– DES/TDES (data encryption standard/triple data encryption standard): ECB (electronic codebook) and
CBC (cipher block chaining) chaining algorithms, 64-, 128- or 192-bit key
– AES (advanced encryption standard): ECB, CBC, GCM, CCM, and CTR (counter mode) chaining algorithms, 128, 192 or 256-bit key
Universal HASH
– SHA-1 and SHA-2 (secure HASH algorithms)
– MD5
– HMAC
The cryptographic accelerator supports DMA request generation.
On-the-fly decryption engine (OTFDEC)
The embedded OTFDEC decrypts in real-time the encrypted content stored in the external Octo-SPI memories used in Memory-mapped mode.
The OTFDEC uses the AES-128 algorithm in counter mode (CTR).
Code execution on external Octo-SPI memories can be protected against fault injection thanks to
STMicroelectronics enhanced encryption mode (refer to RM0455 for details).
The OTFDEC main features are as follow:
• On-the-fly 128-bit decryption during STM32 Octo-SPI read operations (single or multiple).
– AES-CTR algorithm with keystream FIFO (depth= 4)
•
•
– Support for any read size
Up to four independent encrypted regions
– Region definition granularity: 4096 bytes
– Region configuration write locking mechanism
– Two optional decryption modes: execute-only and execute-never
128-bit key for each region, two-byte firmware version, and eight-byte application-defined nonce
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Timers and watchdogs
3.34
•
•
•
Encryption keys confidentiality and integrity protection
– Write only registers with software locking mechanism
– Availability of 8-bit CRC as public key information
Support for STM32 Octo-SPI prefetching mechanism.
Encryption mode
Timers and watchdogs
The devices include two advanced-control timers, ten general-purpose timers, two basic timers, three low-power timers, two watchdogs and a SysTick timer.
All timer counters can be frozen in Debug mode.
Table 4. Timer feature comparison
compares the features of the advanced-control, general-purpose and basic timers.
Table 4. Timer feature comparison
Timer type Timer
Counter resolution
Counter type
Prescaler factor
DMA request generation
Capture/ compare channels
Complementary output
Max interface clock
(MHz)
Advancedcontrol
General purpose
Basic
TIM1,
TIM8
TIM2,
TIM5
TIM3,
TIM4
TIM12
TIM13,
TIM14
TIM15
TIM16,
TIM17
TIM6,
TIM7
16-bit
32-bit
16-bit
16-bit
16-bit
16-bit
16-bit
16-bit
Up, Down,
Up/down
Up, Down,
Up/down
Up, Down,
Up/down
Up
Up
Up
Up
Up
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Any integer between 1 and
65536
Yes
Yes
Yes
No
No
Yes
Yes
Yes
4
4
4
2
1
2
1
0
Low-power timer
LPTIM1,
LPTIM2,
LPTIM3
16-bit Up
1, 2, 4, 8, 16, 32,
64, 128
No 0
1. The maximum timer clock is up to 280 MHz depending on TIMPRE bit in the RCC_CFGR register and
CDPRE1/2 bits in RCC_CDCFGR register.
Yes
No
No
No
No
1
1
No
No
140
140
140
140
140
140
140
140
140
Max timer clock
(MHz)
280
280
280
280
280
280
280
280
280
3.34.1
•
Advanced-control timers (TIM1, TIM8)
The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators multiplexed on 6 channels. They have complementary PWM outputs with programmable inserted dead times. They can also be considered as complete general-purpose timers. Their 4 independent channels can be used for:
Input capture
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3.34.3
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STM32H7B0xB
Timers and watchdogs
•
•
•
Output compare
PWM generation (edge- or center-aligned modes)
One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link feature for synchronization or event chaining.
The advanced-control timers support independent DMA request generation.
•
•
General-purpose timers (TIMx)
There are ten synchronizable general-purpose timers embedded in the STM32H7B0xB devices (see
Table 4. Timer feature comparison
for differences).
TIM2, TIM3, TIM4 and TIM5
The devices include 4 full-featured general-purpose timers: TIM2, TIM3, TIM4 and TIM5. TIM2 and TIM5 are based on a 32-bit auto-reload up/downcounter and a 16-bit prescaler while TIM3 and TIM4 are based on a 16-bit auto-reload up/downcounter and a 16-bit prescaler. All timers feature 4 independent channels for input capture/output compare, PWM or one-pulse mode output. This gives up to 16 input capture/output compare/PWMs on the largest packages.
TIM2, TIM3, TIM4 and TIM5 general-purpose timers can work together, or with the other general-purpose timers and the advanced-control timers (TIM1, TIM8) via the Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4 and TIM5 all have independent DMA request generation. They are capable of handling quadrature (incremental) encoder signals and the digital outputs from 1 to 4 hall-effect sensors.
TIM12, TIM13, TIM14, TIM15, TIM16 and TIM17
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler. TIM13, TIM14, TIM16 and
TIM17 feature one independent channel, whereas TIM12 and TIM15 have two independent channels for input capture/output compare, PWM or one-pulse mode output. They can be synchronized with the TIM2,
TIM3, TIM4 and TIM5 full-featured general-purpose timers or used as simple time bases.
Basic timers (TIM6 and TIM7)
These timers are mainly used for DAC trigger and waveform generation. They can also be used as a generic
16-bit time base.
TIM6 and TIM7 support independent DMA request generation.
•
•
•
•
•
•
•
•
•
•
Low-power timers (LPTIM1, LPTIM2, LPTIM3)
The low-power timers feature an independent clock and are running also in Stop mode if they are clocked by LSE,
LSI or an external clock. The low-power timers are able to wakeup the devices from Stop mode.
The low-power timers support the following features:
16-bit up counter with 16-bit autoreload register
16-bit compare register
Configurable output: pulse, PWM
Continuous / one-shot mode
Selectable software / hardware input trigger
Selectable clock source:
Internal clock source: LSE, LSI, HSI or APB clock
External clock source over LPTIM input (working even with no internal clock source running, used by the
Pulse Counter Application)
Programmable digital glitch filter
Encoder mode
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3.36
STM32H7B0xB
Real-time clock (RTC)
Independent watchdog
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is clocked from an independent 32 kHz internal RC and as it operates independently from the main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog to reset the device when a problem occurs, or as a free-running timer for application timeout management. It is hardware- or software-configurable through the option bytes.
Window watchdog
The window watchdog is based on a 7-bit downcounter that can be set as free-running. It can be used as a watchdog to reset the device when a problem occurs. It is clocked from the main clock. It has an early warning interrupt capability and the counter can be frozen in debug mode.
•
•
•
•
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard downcounter. It features:
A 24-bit downcounter
Autoreload capability
Maskable system interrupt generation when the counter reaches 0
Programmable clock source.
Real-time clock (RTC)
•
•
•
•
•
The RTC is an independent BCD timer/counter. It supports the following features:
•
•
•
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date, month, year, in BCD
(binary-coded decimal) format.
Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
Two programmable alarms.
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to synchronize it with a master clock.
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be used to enhance the calendar precision.
Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal inaccuracy.
Timestamp feature which can be used to save the calendar content. This function can be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to V
BAT
mode.
17-bit auto-reload wakeup timer (WUT) for periodic events with programmable resolution and period.
•
•
•
•
The RTC is supplied through a switch that takes power either from the V
DD
supply when present or from the V
BAT pin.
The RTC clock sources can be:
A 32.768 kHz external crystal (LSE)
An external resonator or oscillator (LSE)
The internal low-power RC oscillator (LSI, with typical frequency of 32 kHz)
The high-speed external clock (HSE) divided by 32.
The RTC is functional in V
BAT
mode and in all low-power modes when it is clocked by the LSE. When clocked by the LSI, the RTC is not functional in V
BAT
mode, but is functional in all low-power modes.
All RTC events (Alarm, Wakeup Timer, Timestamp or Tamper) can generate an interrupt and wakeup the device from the low-power modes.
Tamper and backup registers (TAMP)
The TAMP main features are the following:
• 32 backup registers:
– The backup registers (TAMP_BKPxR) are implemented in the RTC domain that remains powered-on by V
BAT
when the V
DD
power is switched off.
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Inter-integrated circuit interface (I2C)
•
•
•
•
•
Three external tamper detection events
– Each external event can be configured to be active or passive
– External passive tampers with configurable filter and internal pull-up
Seven internal tamper events
Any tamper detection can generate an RTC timestamp event
Any tamper detection can erase the RTC backup registers, the backup SRAM and the memory regions protected by the on-the-fly decryption engine (OTFDEC)
Monotonic counter
Inter-integrated circuit interface (I
2
C)
•
•
•
•
•
The STM32H7B0xB embed four I 2 C interfaces.
The I 2 C bus interface handles communications between the microcontroller and the serial I 2 C bus. It controls all
I 2 C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
•
•
I 2 C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bit rate up to 100 kbit/s
– Fast-mode (Fm), with a bit rate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bit rate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Optional clock stretching
System management bus (SMBus) specification rev 2.0 compatibility:
– Hardware PEC (packet error checking) generation and verification with ACK control
– Address resolution protocol (ARP) support
– SMBus alert
Power system management protocol (PMBus ™ ) specification rev 1.1 compatibility
Independent clock: a choice of independent clock sources allowing the I2C communication speed to be independent from the PCLK reprogramming.
Wakeup from Stop mode on address match
Programmable analog and digital noise filters
1-byte buffer with DMA capability
Universal synchronous/asynchronous receiver transmitter (USART)
•
•
•
•
The STM32H7B0xB devices have five embedded universal synchronous receiver transmitters (USART1,
USART2, USART3, USART6 and USART10) and five universal asynchronous receiver transmitters (UART4,
UART5, UART7, UART8 and UART9). Refer to the table below for a summary of USARTx and UARTx features.
These interfaces provide asynchronous communication, IrDA SIR ENDEC support, multiprocessor communication mode, single-wire half-duplex communication mode and have LIN Master/Slave capability. They provide hardware management of the CTS and RTS signals, and RS485 Driver Enable. They are able to communicate at speeds of up to 10Mbit/s.
USART1, USART2, USART3, USART6 and USART10 also provide Smartcard mode (ISO 7816 compliant) and
SPI-like communication capability.
The USARTs embed a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO mode is enabled by software and is disabled by default.
All USART have a clock domain independent from the CPU clock, allowing the USARTx to wake up the MCU from Stop mode.The wakeup from Stop mode are programmable and can be done on:
Start bit detection
Any received data frame
A specific programmed data frame
Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
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STM32H7B0xB
Low-power universal asynchronous receiver transmitter (LPUART)
All USART interfaces can be served by the DMA controller.
Table 5. USART features
X = supported.
USART modes/features
Hardware flow control for modem
Continuous communication using DMA
Multiprocessor communication
Synchronous mode (Master/Slave)
Smartcard mode
Single-wire Half-duplex communication
IrDA SIR ENDEC block
LIN mode
Dual clock domain and wakeup from low power mode
Receiver timeout interrupt
Modbus communication
Auto baud rate detection
Driver Enable
USART data length
Tx/Rx FIFO
Tx/Rx FIFO size
USART1/2/3/6/10
X
X
X
X
X
X
X
X
X
X
X
X
X
7, 8 and 9 bits
UART4/5/7/8/9
X
X
X
-
-
X
X
X
X
X
X
X
X
X X
16
Low-power universal asynchronous receiver transmitter (LPUART)
The device embeds one Low-power UART (LPUART1). The LPUART supports asynchronous serial communication with minimum power consumption. It supports half duplex single wire communication and modem operations (CTS/RTS). It allows multiprocessor communication.
The LPUART embeds a Transmit FIFO (TXFIFO) and a Receive FIFO (RXFIFO). FIFO mode is enabled by software and is disabled by default.
The LPUART has a clock domain independent from the CPU clock, and can wakeup the system from Stop mode.
The wakeup from Stop mode are programmable and can be done on:
•
•
•
•
Start bit detection
Any received data frame
A specific programmed data frame
Specific TXFIFO/RXFIFO status when FIFO mode is enabled.
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600 baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while having an extremely low energy consumption.
Higher speed clock can be used to reach higher baud rates.
LPUART interface can be served by the DMA controller.
Serial peripheral interfaces (SPI)/integrated interchip sound interfaces (I2S)
The devices feature up to six SPIs (SPI1/I2S1, SPI2/I2S2, SPI3/I2S3, SPI6/I2S6 and SPI4, SPI5) that allow communicating up to 125 Mbits/s in master and slave modes, in half-duplex, full-duplex and simplex modes. The
3-bit prescaler gives 8 master mode frequencies and the frame is configurable from 4 to 32 bits for SPI1/I2S1,
SPI2/I2S2, SPI3/I2S3, from 4 to 16 bits for the others. All SPI interfaces support NSS pulse mode, TI mode,
Hardware CRC calculation, and 16x 8-bit embedded Rx and Tx FIFOs (SPI1/I2S1, SPI2/I2S2, SPI3/I2S3) or 8x
8-bit embedded Rx and Tx FIFOs (SPI4, SPI5, SPI6/I2S6), all with DMA capability. .
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STM32H7B0xB
Serial audio interfaces (SAI)
Four standard I 2 S interfaces (multiplexed with SPI1, SPI2, SPI3, SPI6) are available. They can be operated in master or slave mode, in simplex communication modes, and can be configured to operate with a 16-/32-bit resolution as an input or output channel. Audio sampling frequencies from 8 kHz up to 192 kHz are supported.
When one or all I 2 S interfaces is/are configured in master mode, the master clock can be output to the external
DAC/codec at 256 times the sampling frequency. All I 2 S interfaces support 16x 8-bit embedded Rx and Tx FIFOs with DMA capability.
Serial audio interfaces (SAI)
The devices embed two SAIs (SAI1, SAI2) that allow designing many stereo or mono audio protocols such as
I2S, LSB or MSB-justified, PCM/DSP, TDM or AC’97. An SPDIF output is available when the audio block is configured as a transmitter. To bring this level of flexibility and reconfigurability, the SAI contains two independent audio sub-blocks. Each block has it own clock generator and I/O line controller.
Audio sampling frequencies up to 192 kHz are supported.
One of the SAI supports up to 8 microphones thanks to an embedded PDM interface.
The SAI can work in master or slave configuration. The audio sub-blocks can be either receiver or transmitter and can work synchronously or asynchronously (with respect to the other one). The SAI can be connected with other
SAIs to work synchronously.
SPDIFRX receiver interface (SPDIFRX)
•
•
•
•
•
•
•
•
The SPDIFRX peripheral is designed to receive an S/PDIF flow compliant with IEC-60958 and IEC-61937. These standards support simple stereo streams up to high sample rate, and compressed multi-channel surround sound, such as those defined by Dolby or DTS (up to 5.1).
The main SPDIFRX features are the following:
Up to 4 inputs available
Automatic symbol rate detection
Maximum symbol rate: 12.288 MHz
Stereo stream from 32 to 192 kHz supported
Supports Audio IEC-60958 and IEC-61937, consumer applications
Parity bit management
Communication using DMA for audio samples
Communication using DMA for control and user channel information
• Interrupt capabilities
The SPDIFRX receiver provides all the necessary features to detect the symbol rate, and decode the incoming data stream. The user can select the wanted SPDIF input, and when a valid signal will be available, the SPDIFRX will re-sample the incoming signal, decode the Manchester stream, recognize frames, sub-frames and blocks elements. It delivers to the CPU decoded data, and associated status flags.
The SPDIFRX also offers a signal named spdif_frame_sync, which toggles at the S/PDIF sub-frame rate that will be used to compute the exact sample rate for clock drift algorithms.
Single wire protocol master interface (SWPMI)
•
•
•
•
The single wire protocol master interface (SWPMI) is the master interface corresponding to the contactless frontend (CLF) defined in the ETSI TS 102 613 technical specification. The main features are: full-duplex communication mode automatic SWP bus state management (active, suspend, resume) configurable bit rate up to 2 Mbit/s automatic SOF, EOF and CRC handling
SWPMI can be served by the DMA controller.
Management data input/output (MDIO) slaves
The devices embed an MDIO slave interface it includes the following features:
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STM32H7B0xB
SD/SDIO/MMC card host interfaces (SDMMC)
•
•
•
•
32 MDIO register addresses, each of which is managed using separate input and output data registers:
– 32 x 16-bit firmware read/write, MDIO read-only output data registers
– 32 x 16-bit firmware read-only, MDIO write-only input data registers
Configurable slave (port) address
Independently maskable interrupts/events:
– MDIO register write
– MDIO register read
– MDIO protocol error
Able to operate in and wake up from STOP mode
SD/SDIO/MMC card host interfaces (SDMMC)
Two SDMMC host interfaces are available. They support MultiMediaCard System Specification version 4.51 in three different databus modes: 1 bit (default), 4 bits and 8 bits.
One of the SDMMC interface can be supplied through a separate V
DDMMC at a different voltage level than all other I/Os.
supply. If required, it can thus operate
Both interfaces support the SD memory card specifications version 4.1. and the SDIO card specification version
4.0. in two different databus modes: 1 bit (default) and 4 bits.
Each SDMMC host interface supports only one SD/SDIO/MMC card at any one time and a stack of MMC Version
4.51 or previous.
The SDMMC host interface embeds a dedicated DMA controller allowing high-speed transfers between the interface and the SRAM.
Controller area network (FDCAN1, FDCAN2)
The controller area network (CAN) subsystem consists of two CAN modules, a shared message RAM memory and a clock calibration unit.
Both CAN modules (FDCAN1 and FDCAN2) are compliant with ISO 11898-1 (CAN protocol specification version
2.0 part A, B) and CAN FD protocol specification version 1.0.
FDCAN1 supports time triggered CAN (TTCAN) specified in ISO 11898-4, including event synchronized time-triggered communication, global system time, and clock drift compensation. FDCAN1 contains additional registers, specific to the time triggered feature. The CAN FD option can be used together with event-triggered and time-triggered CAN communication.
A 10 Kbyte message RAM memory implements filters, receive FIFOs, receive buffers, transmit event FIFOs, transmit buffers (and triggers for TTCAN). This message RAM is shared between the two FDCAN1 and FDCAN2 modules.
The common clock calibration unit is optional. It can be used to generate a calibrated clock for both FDCAN1 and
FDCAN2 from the HSI internal RC oscillator and the PLL, by evaluating CAN messages received by the FDCAN1.
Universal serial bus on-the-go high-speed (OTG_HS)
The devices embed an USB OTG high-speed (up to 480 Mbit/s) device/host/OTG peripheral that supports both full-speed and high-speed operations. It integrates the transceivers for full-speed operation (12 Mbit/s) and a
UTMI low-pin interface (ULPI) for high-speed operation (480 Mbit/s). When using the USB OTG_HS interface in
HS mode, an external PHY device connected to the ULPI is required.
The USB OTG_HS peripheral is compliant with the USB 2.0 specification and with the OTG 2.0 specification.
It features software-configurable endpoint setting and supports suspend/resume. The USB OTG_HS controller requires a dedicated 48 MHz clock that is generated by a PLL connected to the HSE oscillator.
DS13196 - Rev 6 page 32/199
3.48
3.49
STM32H7B0xB
High-definition multimedia interface (HDMI) - consumer electronics control (CEC)
•
•
•
The main features are:
•
•
•
Combined Rx and Tx FIFO size of 4 Kbytes with dynamic FIFO sizing
Supports the session request protocol (SRP) and host negotiation protocol (HNP)
8 bidirectional endpoints
•
•
•
•
•
16 host channels with periodic OUT support
Software configurable to OTG1.3 and OTG2.0 modes of operation
USB 2.0 LPM (Link Power Management) support
Battery Charging Specification Revision 1.2 support
Internal FS OTG PHY support
• External HS or HS OTG operation supporting ULPI in SDR mode
The OTG PHY is connected to the microcontroller ULPI port through 12 signals. It can be clocked using the
60 MHz output.
Internal USB DMA
HNP/SNP/IP inside (no need for any external resistor)
For OTG/Host modes, a power switch is needed in case bus-powered devices are connected
High-definition multimedia interface (HDMI) - consumer electronics control
(CEC)
The device embeds a HDMI-CEC controller that provides hardware support for the consumer electronics control
(CEC) protocol (supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an environment. It is specified to operate at low speeds with minimum processing and memory overhead. It has a clock domain independent from the CPU clock, allowing the HDMI-CEC controller to wake up the MCU from Stop mode on data reception.
Debug infrastructure
•
•
•
•
•
•
The devices offer a comprehensive set of debug and trace features to support software development and system integration.
• Breakpoint debugging
Code execution tracing
Software instrumentation
JTAG debug port
Serial-wire debug port
Trigger input and output
Serial-wire trace port
•
•
Trace port
Arm ® CoreSight ™ debug and trace components
The debug can be controlled via a JTAG/Serial-wire debug access port, using industry standard debugging tools.
The trace port performs data capture for logging and analysis.
DS13196 - Rev 6 page 33/199
4
STM32H7B0xB
Memory mapping
Memory mapping
Refer to the product line reference manual (RM0455) for details on the memory mapping as well as the boundary addresses for all peripherals.
DS13196 - Rev 6 page 34/199
5
Pin descriptions
Figure 4. LQFP64 (STM32H7B0xB without SMPS) pinout
STM32H7B0xB
Pin descriptions
VBAT
PC13
PC14-OSC32_IN
PC15-OSC32_OUT
PH0-OSC_IN
PH1-OSC_OUT
NRST
PC0
PC1
PC2
PC3
VSSA
VDDA
PA0
PA1
PA2
8
9
10
11
5
6
7
12
13
14
15
16
1
2
3
4
LQFP64
VDD
VSS
VCAP
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC7
PC6
PB15
PB14
PB13
PB12
41
40
39
38
44
43
42
37
36
35
34
33
48
47
46
45
1.
The above figure shows the package top view.
DS13196 - Rev 6 page 35/199
DS13196 - Rev 6
Figure 5. LQFP100 (STM32H7B0xB without SMPS) pinout
STM32H7B0xB
Pin descriptions
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
PE2
PE3
PE4
PE5
PE6
VBAT
PC13
PC14-OSC32_ON
PC15-OSC32_OUT
VSS 10
VDD 11
PH0-OSC_IN 12
PH1-OSC_OUT 13
NRST 14
7
8
5
6
9
1
2
3
4
PC0 15
PC1 16
PC2_C 17
PC3_C 18
VSSA 19
VREF+ 20
VDDA 21
PA0 22
PA1 23
PA2 24
PA3 25
LQFP100
57
56
55
54
53
60
59
58
52
51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
63
62
61
66
65
64
71
70
69
68
67
75
74
73
72
VDD
VSS
VCAP
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
PD15
PD14
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
1.
The above figure shows the package top view.
page 36/199
DS13196 - Rev 6
PE2
PE3
PE4
PE5
PE6
VBAT
PC13
PC14-OSC32_IN
PC15-OSC32_OUT
PF0
PF1
PF2
PF10
PH0-OSC_IN
PH1-OSC_OUT
NRST
PC0
PC1
PC2_C
PC3_C
VDD
VSSA
VREF+
VDDA
PA0
PA1
PA2
PF3
PF4
PF5
VSS
VDD
PF6
PF7
PF8
PF9
31
32
33
34
27
28
29
30
35
36
21
22
23
24
25
26
13
14
15
16
17
18
19
20
7
8
9
10
11
12
5
6
1
2
3
4
Figure 6. LQFP144 (STM32H7B0xB without SMPS) pinout
STM32H7B0xB
Pin descriptions
LQPF144
VDD
VSS
VCAP
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
VDD33USB
VSS
PG8
PG7
PG6
PG5
PG4
PG3
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
PG2
PD15
PD14
VDD
VSS
PD13
PD12
103
102
101
100
99
108
107
106
105
104
93
92
91
90
89
88
98
97
96
95
94
76
75
74
73
80
79
78
77
84
83
82
81
87
86
85
1.
The above figure shows the package top view.
page 37/199
Figure 7. LQFP176 (STM32H7B0xB without SMPS) pinout
STM32H7B0xB
Pin descriptions
37
38
39
40
41
42
43
44
31
32
33
34
35
36
25
26
27
28
29
30
20
21
22
23
24
9
10
11
12
13
14
15
16
17
18
19
6
7
8
1
2
3
4
5
PC14-OSC32_IN
PC15-OSC32_OUT
PI9
PI10
PI11
VSS
VDD
PF0
PF1
PF2
PF3
PF4
PF5
PE2
PE3
PE4
PE5
PE6
VBAT
PI8
PC13
VSS
VDD
PF6
PF7
PF8
PF9
PF10
PH0-OSC_IN
PH1-OSC_OUT
NRST
PC0
PC1
PC2_C
PC3_C
VDD
VSSA
VREF+
VDDA
PA0
PA1
PA2
PH2
PH3
LQFP176
1.
The above figure shows the package top view.
PI1
PI0
PH15
PH14
PH13
VSS
PG8
PG7
PG6
PG5
PG4
PG3
PG2
VDD
VSS
VCAP
PA13
PA12
PA11
PA10
PA9
PA8
PC9
PC8
PC7
PC6
VDD33USB
PD15
PD14
VDD
VSS
PD13
PD12
PD11
PD10
PD9
PD8
PB15
PB14
PB13
PB12
VDD
VSS
PH12
122
121
120
119
118
117
116
115
114
127
126
125
124
123
132
131
130
129
128
113
112
111
110
109
108
107
106
98
97
96
95
94
93
92
91
90
89
105
104
103
102
101
100
99
DS13196 - Rev 6 page 38/199
DS13196 - Rev 6
STM32H7B0xB
Pin descriptions
Figure 8. UFBGA169 (STM32H7B0xB with SMPS) ballout
K
L
H
J
M
N
F
G
D
E
A
B
C
1
PE4
PC15-
OSC32_
OUT
PC14-
OSC32_IN
VDD
VLXSMPS VSSSMPS VBAT
VDDSMPS VFBSMPS
VDD
PH0-
OSC_IN
VSS
PH1-
OSC_OUT
PC0 PC1
PC3_C
VDDA
VDD
PA2
2
PE2
PE3
PE6
VSS
PC2_C
VREF+
VSS
PH2
3
VDD
VSS
PE5
PC13
PF0
PF4
PF10
VSSA
PA0_C
PA1_C
PH3
PA3
4
VCAP
PF2
PF6
PF8
PC3
PA1
PA5
VDDLDO
PDR_ON
PE1
PF1
VSS
VDD
5
PB6
6
VDDMMC
PF5
PF9
PC2
PA0
PA6
PB1
PB8
PB9
PE0
PF3
PB0
PC5
PF7
NRST
PA4
PA7
PC4
PB2
PB4
PB5
PB7
BOOT0
PF11
PF12
7
VDD
VSS
PG14
PG13
PG15
PB3
PF13
PF14
PF15
PG0
PG1
VSS
VDD
8
PG10
PG4
PE7
PE8
PE9
PE13
PE12
PG11
PG9
PD7
PG12
PE10
PE11
9
PD5
PC6
PG6
PG2
PE14
PH10
PB10
PD6
PD4
PD3
PD2
PB11
PE15
10
VDD
11
PC12
12
PC10
13
PH14
PC7
PG7
PG3
PD11
PH12
PH11
VSS
PD1
PD0
PA10
VDDLDO
VCAP
PC11
PA15
PA14
VSS
PH13
VDD
PA13
PA9
VDDLDO VCAP
PA8
PC8
PA12
PA11 PC9
PG8 VDD50USB VDD33USB
PG5
PD13
PD9
PB13
VSS
VDD
VSS
PD15
PD10
VSS
PD8
PB12
VDD
PD14
PD12
VDD
PB15
PB14
1.
The above figure shows the package top view.
page 39/199
STM32H7B0xB
Pin descriptions
P
R
M
N
1
VSS
Figure 9. UFBGA176+25 (STM32H7B0xB with SMPS) ballout
2 3 4
PB8 VDDLDO VCAP
5
PB6
6
PB3
7
PG11 A
G
H
B
C
D
E
PC13 VSS PE2
PC15-
OSC32_
OUT
PC14-
OSC32_IN
PE5
VSS VBAT PE6
PE1 BOOT0
PDR_ON
VDD
MMC
PB5
VSS
VDD
F
PE4 PE3 PB9
VLX
SMPS
VDD
SMPS
PF6
VSS
SMPS
VFB
SMPS
PF4
PF1
PF2
PF5
PE0
PF0
VDD
PF3
PB7 PB4
VSS
VSS
VSS
PG13
PG14
PG15
VSS
VSS
VSS
8
PG9
PD7
PG10
PG12
VSS
VSS
VSS
9
PD3
PD5
PD4
PD6
VSS
VSS
VSS
10
PD1
PD2
PD0
VSS
VSS
VSS
VSS
11
PA15
PC12
PC11
VDD
12 13 14
PA14 VDDLDO VCAP
PH14 PA13 PA8
15
VSS
PA12
PC10 PH13 PA10 PA11
PH15
VDD
PA9 PC8
VSS
PG8
VDD33
USB
PG7
PG6
PG4
VDD
PC9
PG3
PC6
PD14
PC7
VDD50
USB
PG5
PG2
PD13
J
K
L
PH0-
OSC_IN
PH1-
OSC_
OUT
NRST
PF8
VSS
PF7
PF10
PF9
VDD
PC0 PC1 VREF−
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
PD15 PD11
VSS PD9
VSS
PB15
PD12
PB14
VDD PD10 PD8 PB13
PC2 PC3 VREF+
PC2_C PC3_C VSSA
VDDA
PH2
VDD VSS
PA3 PA7
PC5
PF11
PA0
VSS
PA1 PA1_C PH4
PA2 PA0_C PH3
PA4
PH5
PA5
PC4
PB2
PA6
PB1
PE8
PG0
PB0
VDD VSS
PG1 PF15
PE7 PB11
PE10 PF14
PH7
PF13
PE14 PH11
PB10 PH8
PH9 PB12
PH10 PH12
PF12
PE9
PE12 PE13 PE15 PH6
PE11 VCAP VDDLDO VSS
1.
The above figure shows the package top view.
2.
The devices with SMPS correspond to commercial code STM32H7B0IIK6Q.
Name
Pin name
Pin type
Table 6. Legend/abbreviations used in the pinout table
I/O structure
Abbreviation Definition
Unless otherwise specified in brackets below the pin name, the pin function during and after reset is the same as the actual pin name
S
I
Supply pin
Input only pin
I/O
ANA
FT
TT
B
RST
_f
Input / output pin
Analog-only Input
5 V tolerant I/O
3.3 V tolerant I/O
Dedicated BOOT0 pin
Bidirectional reset pin with embedded weak pull-up resistor
Option for TT and FT I/Os
I2C FM+ option
DS13196 - Rev 6 page 40/199
STM32H7B0xB
Pin descriptions
Name
I/O structure
Abbreviation
_a
_u
_h0
_h1
Definition analog option (supplied by V
DDA
)
USB option (supplied by
V
DD33
USB)
High-speed low voltage (mainly
SDMMC2 on V
DDMMC
power rail)
High-speed low voltage (mainly for OCTOSPI)
High-speed low voltage (mainly for FMC)
Notes
High-speed low voltage
_s
Secondary supply (supplied by
V
DDMMC
Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset.
Functions selected through GPIOx_AFR registers
Functions directly selected/enabled through peripheral registers
Pin functions
Alternate functions
Additional functions
1. Refer to SYSCFG_CCCSR register in the device reference manual for how to set a group of I/Os in
High-speed low-voltage mode. Depending on the chosen I/Os (for example OCTOSPI), it can belong to several groups of I/Os and several HSLVx bits need to be set (refer to Table Pin/ball definition). Take care that the VDDIO_HSLV and/or VDDMMC_HSLV option bits must also be set.
2. Refer to the table Features and peripheral counts for the list of packages featuring a V
DDMMC supply pad.
separate
Table 7. STM32H7B0xB pin/ball definition
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
A2
B2
A1
C3
B2
B1
-
-
-
C3 D3 -
1
2
3
4
1
2
3
4
1
2
3
4
C2
B3
A3
E3
E3
A1
-
E2
-
-
-
1
5
-
-
6
5
6
-
-
5
-
-
6
PE2
PE3
PE4
PE5
PE6
VSS
VDD
VBAT
I/O
S
S
S
I/O
I/O
I/O
I/O
-
-
-
FT_h2
FT_h2
FT_h2
FT_h2
FT_h2
TRACECLK, SAI1_CK1, SPI4_SCK,
SAI1_MCLK_A, OCTOSPIM_P1_IO2,
USART10_RX, FMC_A23, EVENTOUT
TRACED0, TIM15_BKIN, SAI1_SD_B,
USART10_TX, FMC_A19, EVENTOUT
TRACED1, SAI1_D2, DFSDM1_DATIN3,
TIM15_CH1N, SPI4_NSS, SAI1_FS_A,
FMC_A20, DCMI_D4/PSSI_D4,
LCD_B0, EVENTOUT
TRACED2, SAI1_CK2,
DFSDM1_CKIN3, TIM15_CH1,
SPI4_MISO, SAI1_SCK_A, FMC_A21,
DCMI_D6/PSSI_D6, LCD_G0,
EVENTOUT
TRACED3, TIM1_BKIN2, SAI1_D1,
TIM15_CH2, SPI4_MOSI, SAI1_SD_A,
SAI2_MCK_B, TIM1_BKIN2_COMP12,
FMC_A22, DCMI_D7/PSSI_D7,
LCD_G1, EVENTOUT
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 41/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
D2
-
A15
-
-
-
-
-
-
7
VSS
PI8
7
-
8
9
-
-
-
-
10
11
-
-
-
-
-
-
-
-
-
-
-
-
-
D3
-
C1
B1
C1
C2
D2
D1
2
-
3
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
H2
H3
E1
E4
H1
G3
H4
-
D10
D11
F2
F1
G1
G2
F4
F3
J3
-
-
G3
F5
B7
A7
G4
F4
E5
-
-
D1
E2
E1
F1
F2
F3
E4
F6
7
8
-
9
-
-
14
15
16
17
18
12
13
-
-
-
-
-
-
-
10
11
19
8 PC13 I/O
12
20
21
22
23
24
18
19
13
-
-
14
15
-
-
16
17
-
9
10
11
VSS
PC14-OSC32_IN
(OSC32_IN)
PC15-
OSC32_OUT
(OSC32_OUT)
PI9
S
I/O
I/O
I/O
PI10
PF2
PF3
PF4
PF5
VSS
VDD
PF6
PI11
VSS
VDD
VSSSMPS
VLXSMPS
VDDSMPS
VFBSMPS
PF0
PF1
I/O
I/O
I/O
I/O
I/O
S
S
I/O
I/O
S
S
S
S
S
S
I/O
I/O
25 PF7 I/O
S
I/O
-
FT
FT
-
FT
-
EVENTOUT
EVENTOUT
-
EVENTOUT
FT_h2
FT_h2
FT_h2
FT_h2
-
-
FT_h1
FT
-
-
-
-
-
-
FT_f
FT_f
FT
FT_h2
FT_h2
FT_h1
EVENTOUT
OCTOSPIM_P2_IO0, UART4_RX,
FDCAN1_RX, FMC_D30, LCD_VSYNC,
EVENTOUT
OCTOSPIM_P2_IO1, FMC_D31,
PSSI_D14, LCD_HSYNC, EVENTOUT
OCTOSPIM_P2_IO2, LCD_G6,
OTG_HS_ULPI_DIR, PSSI_D15,
EVENTOUT
-
-
-
-
-
-
I2C2_SDA, OCTOSPIM_P2_IO0,
FMC_A0, EVENTOUT
I2C2_SCL, OCTOSPIM_P2_IO1,
FMC_A1, EVENTOUT
I2C2_SMBA, OCTOSPIM_P2_IO2,
FMC_A2, EVENTOUT
OCTOSPIM_P2_IO3, FMC_A3,
EVENTOUT
OCTOSPIM_P2_CLK, FMC_A4,
EVENTOUT
OCTOSPIM_P2_NCLK, FMC_A5,
EVENTOUT
-
-
TIM16_CH1, SPI5_NSS, SAI1_SD_B,
UART7_Rx, OCTOSPIM_P1_IO3,
EVENTOUT
TIM17_CH1, SPI5_SCK,
SAI1_MCLK_B, UART7_Tx,
OCTOSPIM_P1_IO2, EVENTOUT
-
TAMP_IN2/
TAMP_OUT3,
RTC_OUT2, WKUP4
TAMP_IN1/
TAMP_OUT2/
TAMP_OUT3,
RTC_OUT1/RTC_TS,
WKUP3
-
OSC32_IN
OSC32_OUT
-
-
-
-
-
-
-
-
-
-
WKUP5
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 42/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
H4
G5
H3
H1
H2
G6
J1
J2
H5
K2
J4
G1
G2
J3
-
L2
L1
J5
J2
J4
K3
J1
K1
L1
L2
L3
N1
M2
P1
-
5
6
7
8
10
11
14
-
-
-
-
9
-
-
16
-
-
E12
F6
N3
L4
M3
M4
-
-
-
13
-
-
12
-
-
19
-
20
21
-
12
13
14
15
22
-
20
21
22
23
24
25
26
27
34
-
-
30
-
31
-
32
33
26
27
34
35
36
-
37
-
38
39
PF8
PF9
28
29
30
31
32
PF10
PH0-
OSC_IN(PH0)
PH1-OSC_OUT
(PH1)
NRST
PC0
I/O
I/O
I/O
I/O
I/O
33
-
-
40
-
PC1
PC2
PC2_C
PC3
PC3_C
VDD
VSS
VSSA
VREF-
VREF+
VDDA
PA0
PA0_C
I/O
I/O
I/O
I/O
ANA
I/O
ANA
S
S
S
S
S
S
I/O
ANA
FT_h1
FT_h1
FT_h1
FT
FT
RST
FT_a
FT_ah0
FT_a
TT_a
FT_a
TT_a
FT_a
TT_a
TIM16_CH1N, SPI5_MISO,
SAI1_SCK_B, UART7_RTS,
TIM13_CH1, OCTOSPIM_P1_IO0,
EVENTOUT
TIM17_CH1N, SPI5_MOSI,
SAI1_FS_B, UART7_CTS, TIM14_CH1,
OCTOSPIM_P1_IO1, EVENTOUT
TIM16_BKIN, SAI1_D3, PSSI_D15,
OCTOSPIM_P1_CLK, DCMI_D11/
PSSI_D11, LCD_DE, EVENTOUT
EVENTOUT
-
-
-
OSC_IN
EVENTOUT OSC_OUT
-
DFSDM1_CKIN0, DFSDM1_DATIN4,
SAI2_FS_B, FMC_A25,
OTG_HS_ULPI_STP, LCD_G2,
FMC_SDNWE, LCD_R5, EVENTOUT
TRACED0, SAI1_D1,
DFSDM1_DATIN0, DFSDM1_CKIN4,
SPI2_MOSI/I2S2_SDO, SAI1_SD_A,
SDMMC2_CK, OCTOSPIM_P1_IO4,
MDIOS_MDC, LCD_G5, EVENTOUT
PWR_CSTOP, DFSDM1_CKIN1,
SPI2_MISO/I2S2_SDI,
DFSDM1_CKOUT, OCTOSPIM_P1_IO2,
OTG_HS_ULPI_DIR,
OCTOSPIM_P1_IO5, FMC_SDNE0,
EVENTOUT
-
ADC12_INP10
ADC12_INP11,
ADC12_INN10,
TAMP_IN3, WKUP6
ADC12_INP12,
ADC12_INN11
-
ADC2_INP0,
ADC2_INN1
PWR_CSLEEP, DFSDM1_DATIN1,
SPI2_MOSI/I2S2_SDO,
OCTOSPIM_P1_IO0,
OTG_HS_ULPI_NXT,
OCTOSPIM_P1_IO6, FMC_SDCKE0,
EVENTOUT
-
-
-
-
-
-
-
TIM2_CH1/TIM2_ETR, TIM5_CH1,
TIM8_ETR, TIM15_BKIN,
SPI6_NSS/I2S6_WS, USART2_CTS/
USART2_NSS, UART4_TX,
SDMMC2_CMD, SAI2_SD_B,
EVENTOUT
ADC12_INP13,
ADC12_INN12
ADC2_INP1
-
-
-
-
-
-
ADC1_INP16,
WKUP1
-
ADC1_INP0,
ADC1_INN1
DS13196 - Rev 6 page 43/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
-
-
N2
M1
M2
M3
P2
15 23
L3
N1
P3
R2
-
16
-
24
35
-
36
41
-
42
N4
G4
F7
R4
P4
R5 -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
46
43
-
-
44
N3
M4
N4
H6
N5 17 25
F8
H12
P5
18
19
20
26
27
28
37
38
39
40
47
48
49
50
L4 P6 21 29 41 51
K5 R7 22 30 42 52
J6 N6 23 31 43 53
K6 R6 24 32 44 54
N5 M7 25 33 45 55
PA1
PA1_C
PA2
PH2
VDD
VSS
PH3
PH4
PH5
PA3
VSS
VDD
PA4
PA5
PA6
PA7
PC4
PC5
S
S
I/O
I/O
I/O
I/O
S
S
I/O
I/O
ANA
I/O
I/O
I/O
I/O
I/O
I/O
I/O
FT_ah1
TT_a
FT_a
FT_h2
-
-
FT_ah2
FT_fa
FT_fa
FT_ah1
-
-
TT_a
TT_ah0
TT_ah1
FT_ah1
FT_a
FT_ah1
TIM2_CH2, TIM5_CH2, LPTIM3_OUT,
TIM15_CH1N, USART2_RTS,
UART4_RX, OCTOSPIM_P1_IO3,
SAI2_MCK_B, OCTOSPIM_P1_DQS,
LCD_R2, EVENTOUT
-
TIM2_CH3, TIM5_CH3, TIM15_CH1,
DFSDM2_CKIN1, USART2_TX,
SAI2_SCK_B, MDIOS_MDIO, LCD_R1,
EVENTOUT
LPTIM1_IN2, OCTOSPIM_P1_IO4,
SAI2_SCK_B, FMC_SDCKE0, LCD_R0,
EVENTOUT
-
-
OCTOSPIM_P1_IO5, SAI2_MCK_B,
FMC_SDNE0, LCD_R1, EVENTOUT
I2C2_SCL, LCD_G5,
OTG_HS_ULPI_NXT, PSSI_D14,
LCD_G4, EVENTOUT
I2C2_SDA, SPI5_NSS, FMC_SDNWE,
EVENTOUT
TIM2_CH4, TIM5_CH4,
OCTOSPIM_P1_CLK, TIM15_CH2,
I2S6_MCK, USART2_RX, LCD_B2,
OTG_HS_ULPI_D0, LCD_B5,
EVENTOUT
-
-
TIM5_ETR, SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS, USART2_CK,
SPI6_NSS/I2S6_WS, DCMI_HSYNC/
PSSI_DE, LCD_VSYNC, EVENTOUT
PWR_NDSTOP2, TIM2_CH1/
TIM2_ETR, TIM8_CH1N, SPI1_SCK/
I2S1_CK, SPI6_SCK/I2S6_CK,
OTG_HS_ULPI_CK, PSSI_D14,
LCD_R4, EVENTOUT
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO/I2S1_SDI,
OCTOSPIM_P1_IO3, SPI6_MISO/
I2S6_SDI, TIM13_CH1,
TIM8_BKIN_COMP12, MDIOS_MDC,
TIM1_BKIN_COMP12, DCMI_PIXCLK/
PSSI_PDCK, LCD_G2, EVENTOUT
TIM1_CH1N, TIM3_CH2, TIM8_CH1N,
DFSDM2_DATIN1, SPI1_MOSI/
I2S1_SDO, SPI6_MOSI/I2S6_SDO,
TIM14_CH1, OCTOSPIM_P1_IO2,
FMC_SDNWE, LCD_VSYNC,
EVENTOUT
DFSDM1_CKIN2, I2S1_MCK,
SPDIFRX1_IN2, FMC_SDNE0,
LCD_R7, EVENTOUT
SAI1_D3, DFSDM1_DATIN2, PSSI_D15,
SPDIFRX1_IN3, OCTOSPIM_P1_DQS,
FMC_SDCKE0, COMP1_OUT, LCD_DE,
EVENTOUT
ADC1_INP17,
ADC1_INN16
ADC1_INP1
ADC1_INP14,
WKUP2
-
-
-
-
-
-
-
-
ADC1_INP15
ADC1_INP18,
DAC1_OUT1
ADC1_INP19,
ADC1_INN18,
DAC1_OUT2
ADC12_INP3,
DAC2_OUT1
ADC12_INP7,
ADC12_INN3,
OPAMP1_VINM
ADC12_INP4,
OPAMP1_VOUT,
COMP1_INM
ADC12_INP8,
ADC12_INN4,
OPAMP1_VINM
DS13196 - Rev 6 page 44/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
N7
M7
K4
F9
-
-
-
-
-
-
-
M5 R8 26 34 46 56
L5 M8 27 35 47 57
L6 P7 28 36 48 58
N7
R10
N10
P8
F12
M5
N9
P11
F10
L12
N11
P9
M6
H7
J7
K7
-
-
L7
N6
-
-
G7
G8
-
-
-
-
-
-
-
-
-
-
-
-
49
54
55
56
-
-
57
50
51
52
53
58
-
-
-
-
-
-
-
-
-
-
-
37
59
64
65
66
-
-
67
60
61
62
63
68
H8 N8 38 59 69
J8
M11
N11
M8
R11
G6
M9
R9
-
-
-
-
39
-
-
40
60
61
62
63
70
71
72
73
VDD
VSS
PB0
PB1
PB2
PF11
PF14
PF15
PG0
VSS
VDD
PG1
PF12
VSS
VDD
PF13
PE7
PE8
PE9
VSS
VDD
PE10
S
S
I/O
I/O
I/O
I/O
S
S
I/O
I/O
S
S
I/O
I/O
I/O
I/O
I/O
I/O
I/O
S
S
I/O
-
-
FT_ah0
FT_ah0
FT_ah1
FT_ah1
FT_ah2
-
-
FT_ah2
FT_fah2
FT_fh2
FT_h2
-
-
FT_h2
FT_ah2
FT_ah2
FT_ah2
-
-
FT_ah2
-
-
TIM1_CH2N, TIM3_CH3,
TIM8_CH2N, DFSDM2_CKOUT,
DFSDM1_CKOUT, UART4_CTS,
LCD_R3, OTG_HS_ULPI_D1,
OCTOSPIM_P1_IO1, LCD_G1,
EVENTOUT
TIM1_CH3N, TIM3_CH4,
TIM8_CH3N, DFSDM1_DATIN1,
LCD_R6, OTG_HS_ULPI_D2,
OCTOSPIM_P1_IO0, LCD_G0,
EVENTOUT
RTC_OUT2, SAI1_D1,
DFSDM1_CKIN1, SAI1_SD_A,
SPI3_MOSI/I2S3_SDO,
OCTOSPIM_P1_CLK,
OCTOSPIM_P1_DQS, EVENTOUT
SPI5_MOSI, OCTOSPIM_P1_NCLK,
SAI2_SD_B, FMC_SDNRAS,
DCMI_D12/PSSI_D12, EVENTOUT
OCTOSPIM_P2_DQS, FMC_A6,
EVENTOUT
-
-
DFSDM1_DATIN6, I2C4_SMBA,
FMC_A7, EVENTOUT
DFSDM1_CKIN6, I2C4_SCL, FMC_A8,
EVENTOUT
I2C4_SDA, FMC_A9, EVENTOUT
OCTOSPIM_P2_IO4, UART9_RX,
FMC_A10, EVENTOUT
-
-
OCTOSPIM_P2_IO5, UART9_TX,
FMC_A11, EVENTOUT
TIM1_ETR, DFSDM1_DATIN2,
UART7_Rx, OCTOSPIM_P1_IO4,
FMC_D4/FMC_DA4, EVENTOUT
TIM1_CH1N, DFSDM1_CKIN2,
UART7_Tx, OCTOSPIM_P1_IO5,
FMC_D5/FMC_DA5, COMP2_OUT,
EVENTOUT
TIM1_CH1, DFSDM1_CKOUT,
UART7_RTS, OCTOSPIM_P1_IO6,
FMC_D6/FMC_DA6, EVENTOUT
-
-
TIM1_CH2N, DFSDM1_DATIN4,
UART7_CTS, OCTOSPIM_P1_IO7,
FMC_D7/FMC_DA7, EVENTOUT
-
-
ADC12_INP9,
ADC12_INN5,
OPAMP1_VINP,
COMP1_INP
ADC12_INP5,
COMP1_INM
COMP1_INP
ADC1_INP2
ADC1_INP6,
ADC1_INN2
-
-
ADC2_INP2
ADC2_INP6,
ADC2_INN2
-
-
-
-
OPAMP2_VINM
OPAMP2_VOUT,
COMP2_INM
OPAMP2_VINM
OPAMP2_VINP,
COMP2_INP
-
-
COMP2_INM
DS13196 - Rev 6 page 45/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
N8 R12 41 64 74
L8 P12 42 65 75
K8 P13 43 66 76
J9
N9
M12 -
P14 -
44
45
67
68
77
78
L9 N12 29 46 69 79
-
K9
M9
N10
-
M10
-
-
-
-
-
30
31
-
32
-
-
-
P10
R13
M10
R14
-
P15
M11
N13
47
48
49
-
50
-
-
-
M14 -
N14 -
-
L10
K10
L12
L13
M13
N15
G10
-
-
-
-
-
-
-
-
-
-
70
71
-
-
72
-
-
-
-
-
-
-
86
87
80
81
-
-
82
83
84
85
88
89
90
91
PE13
PE14
PE15
PE11
PE12
PB10
PB11
VCAP
VSS
VDDLDO
VDD
PH6
PH7
PH8
PH9
PH10
PH11
PH12
VSS
VDD
I/O
I/O
I/O
I/O
I/O
S
S
S
S
I/O
I/O
I/O
I/O
I/O
S
S
I/O
I/O
I/O
I/O
-
-
-
-
FT
FT_ah2
FT_h2
FT_h2
FT_h2
FT_h2
FT_f
FT_f
FT_f
FT_fh2
FT_h2
FT_h2
FT_fh2
FT_fh2
-
-
TIM1_CH2, DFSDM1_CKIN4,
SPI4_NSS, SAI2_SD_B,
OCTOSPIM_P1_NCS, FMC_D8/
FMC_DA8, LCD_G3, EVENTOUT
TIM1_CH3N, DFSDM1_DATIN5,
SPI4_SCK, SAI2_SCK_B, FMC_D9/
FMC_DA9, COMP1_OUT, LCD_B4,
EVENTOUT
TIM1_CH3, DFSDM1_CKIN5,
SPI4_MISO, SAI2_FS_B, FMC_D10/
FMC_DA10, COMP2_OUT, LCD_DE,
EVENTOUT
TIM1_CH4, SPI4_MOSI, SAI2_MCK_B,
FMC_D11/FMC_DA11, LCD_CLK,
EVENTOUT
TIM1_BKIN, USART10_CK, FMC_D12/
FMC_DA12, TIM1_BKIN_COMP12,
LCD_R7, EVENTOUT
TIM2_CH3, LPTIM2_IN1, I2C2_SCL,
SPI2_SCK/I2S2_CK, DFSDM1_DATIN7,
USART3_TX, OCTOSPIM_P1_NCS,
OTG_HS_ULPI_D3, LCD_G4,
EVENTOUT
TIM2_CH4, LPTIM2_ETR, I2C2_SDA,
DFSDM1_CKIN7, USART3_RX,
OTG_HS_ULPI_D4, LCD_G5,
EVENTOUT
-
-
-
-
TIM12_CH1, I2C2_SMBA, SPI5_SCK,
FMC_SDNE1, DCMI_D8/PSSI_D8,
EVENTOUT
I2C3_SCL, SPI5_MISO, FMC_SDCKE1,
DCMI_D9/PSSI_D9, EVENTOUT
TIM5_ETR, I2C3_SDA, FMC_D16,
DCMI_HSYNC/PSSI_DE, LCD_R2,
EVENTOUT
TIM12_CH2, I2C3_SMBA, FMC_D17,
DCMI_D0/PSSI_D0, LCD_R3,
EVENTOUT
TIM5_CH1, I2C4_SMBA, FMC_D18,
DCMI_D1/PSSI_D1, LCD_R4,
EVENTOUT
TIM5_CH2, I2C4_SCL, FMC_D19,
DCMI_D2/PSSI_D2, LCD_R5,
EVENTOUT
TIM5_CH3, I2C4_SDA, FMC_D20,
DCMI_D3/PSSI_D3, LCD_R6,
EVENTOUT
-
-
COMP2_INP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 46/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
N12
L11
N13
M13
K13 J15 59 81 100
J11
J12
-
-
H9
H12
H13
J13
M12
K11
K12
-
J10
M15
L15 34
K15
K14
H15
R1
-
H14
J12
D6
G7
G15
L14
K13
L13
H6
J13
33
35
36
-
-
-
-
-
-
-
-
-
-
-
-
-
51
52
53
54
57
-
58
55
56
60
62
-
-
-
-
-
61
73
74
75
76
79
-
80
77
78
92
93
94
95
101
105
-
-
106
102
103
104
82
86
-
-
87
83
84
85
98
-
99
96
97
PB12
PB13
PB14
PD13
VSS
VDD
PD14
PD15
VSS
VSS
PG2
PB15
PD8
PD9
PD10
VSS
PD11
PD12
I/O
I/O
S
S
I/O
S
S
I/O
I/O
S
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
-
-
FT_h2
FT_h2
-
-
FT_h2
FT_h1
FT_h0
FT_h0
FT_h0
FT_h2
FT_h2
FT_h2
-
FT_h2
FT_fh2
FT_fh2
TIM1_BKIN, OCTOSPIM_P1_NCLK,
I2C2_SMBA, SPI2_NSS/
I2S2_WS, DFSDM1_DATIN1,
USART3_CK, FDCAN2_RX,
OTG_HS_ULPI_D5, DFSDM2_DATIN1,
TIM1_BKIN_COMP12, UART5_RX,
EVENTOUT
TIM1_CH1N, LPTIM2_OUT,
DFSDM2_CKIN1, SPI2_SCK/I2S2_CK,
DFSDM1_CKIN1, USART3_CTS/
USART3_NSS, FDCAN2_TX,
OTG_HS_ULPI_D6, SDMMC1_D0,
DCMI_D2/PSSI_D2, UART5_TX,
EVENTOUT
TIM1_CH2N, TIM12_CH1, TIM8_CH2N,
USART1_TX, SPI2_MISO/I2S2_SDI,
DFSDM1_DATIN2, USART3_RTS,
UART4_RTS, SDMMC2_D0, LCD_CLK,
EVENTOUT
RTC_REFIN, TIM1_CH3N, TIM12_CH2,
TIM8_CH3N, USART1_RX, SPI2_MOSI/
I2S2_SDO, DFSDM1_CKIN2,
UART4_CTS, SDMMC2_D1, LCD_G7,
EVENTOUT
DFSDM1_CKIN3, USART3_TX,
SPDIFRX1_IN1, FMC_D13/FMC_DA13,
EVENTOUT
DFSDM1_DATIN3, USART3_RX,
FMC_D14/FMC_DA14, EVENTOUT
DFSDM1_CKOUT, DFSDM2_CKOUT,
USART3_CK, FMC_D15/FMC_DA15,
LCD_B3, EVENTOUT
-
LPTIM2_IN2, I2C4_SMBA,
USART3_CTS/USART3_NSS,
OCTOSPIM_P1_IO0, SAI2_SD_A,
FMC_A16/FMC_CLE, EVENTOUT
LPTIM1_IN1, TIM4_CH1, LPTIM2_IN1,
I2C4_SCL, USART3_RTS,
OCTOSPIM_P1_IO1, SAI2_FS_A,
FMC_A17/FMC_ALE, DCMI_D12/
PSSI_D12, EVENTOUT
LPTIM1_OUT, TIM4_CH2, I2C4_SDA,
OCTOSPIM_P1_IO3, SAI2_SCK_A,
UART9_RTS, FMC_A18, DCMI_D13/
PSSI_D13, EVENTOUT
-
-
TIM4_CH3, UART8_CTS, UART9_RX,
FMC_D0/FMC_DA0, EVENTOUT
TIM4_CH4, UART8_RTS, UART9_TX,
FMC_D1/FMC_DA1, EVENTOUT
-
-
TIM8_BKIN, TIM8_BKIN_COMP12,
FMC_A12, EVENTOUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 47/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
H10
C12
C13
F8
H11
G9
G10
G11
-
G12
G13
F9
F10
F12
F11
-
H13
H10
-
G14
F15
F14
G13
G12
J6
E15
F13
E14 37
D15
D14
E13
J7
38
-
-
-
-
-
-
-
-
-
-
-
-
39
-
-
-
-
-
-
-
-
-
-
-
-
63
64
65
66
-
E12 B14 40 67
E11 D13 41 68
88
-
-
89
90
91
92
93
94
-
95
112
113
-
114
PG8
VSS
VDD50USB
VDD33USB
96
97
98
99
-
115
116
117
118
-
100 119
101
107
-
-
108
109
110
111
120
PG3
VSS
VDD
PG4
PG5
PG6
PG7
PC6
PC7
PC8
PC9
VSS
PA8
PA9
I/O
S
S
I/O
I/O
I/O
S
I/O
I/O
I/O
S
S
S
I/O
I/O
I/O
I/O
I/O
FT_h2
-
-
FT_h2
FT_h2
FT_h2
FT_h2
FT_h2
-
-
-
FT_h0
FT_h0
FT_h0
FT_fh0
-
FT_fh0
FT_u
TIM8_BKIN2, TIM8_BKIN2_COMP12,
FMC_A13, EVENTOUT
-
-
TIM1_BKIN2, TIM1_BKIN2_COMP12,
FMC_A14/FMC_BA0, EVENTOUT
TIM1_ETR, FMC_A15/FMC_BA1,
EVENTOUT
TIM17_BKIN, OCTOSPIM_P1_NCS,
FMC_NE3, DCMI_D12/PSSI_D12,
LCD_R7, EVENTOUT
SAI1_MCLK_A, USART6_CK,
OCTOSPIM_P2_DQS, FMC_INT,
DCMI_D13/PSSI_D13, LCD_CLK,
EVENTOUT
TIM8_ETR, SPI6_NSS/I2S6_WS,
USART6_RTS, SPDIFRX1_IN2,
FMC_SDCLK, LCD_G7, EVENTOUT
-
-
-
TIM3_CH1, TIM8_CH1,
DFSDM1_CKIN3, I2S2_MCK,
USART6_TX, SDMMC1_D0DIR,
FMC_NWAIT, SDMMC2_D6,
SDMMC1_D6, DCMI_D0/PSSI_D0,
LCD_HSYNC, EVENTOUT
TRGIO, TIM3_CH2, TIM8_CH2,
DFSDM1_DATIN3, I2S3_MCK,
USART6_RX, SDMMC1_D123DIR,
FMC_NE1, SDMMC2_D7, SWPMI_TX,
SDMMC1_D7, DCMI_D1/PSSI_D1,
LCD_G6, EVENTOUT
TRACED1, TIM3_CH3, TIM8_CH3,
USART6_CK, UART5_RTS, FMC_NE2/
FMC_NCE, FMC_INT, SWPMI_RX,
SDMMC1_D0, DCMI_D2/PSSI_D2,
EVENTOUT
MCO2, TIM3_CH4, TIM8_CH4,
I2C3_SDA, I2S_CKIN, UART5_CTS,
OCTOSPIM_P1_IO0, LCD_G3,
SWPMI_SUSPEND, SDMMC1_D1,
DCMI_D3/PSSI_D3, LCD_B2,
EVENTOUT
-
MCO1, TIM1_CH1, TIM8_BKIN2,
I2C3_SCL, USART1_CK,
OTG_HS_SOF, UART7_RX,
TIM8_BKIN2_COMP12, LCD_B3,
LCD_R6, EVENTOUT
TIM1_CH2, LPUART1_TX, I2C3_SMBA,
SPI2_SCK/I2S2_CK, USART1_TX,
DCMI_D0/PSSI_D0, LCD_R5,
EVENTOUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SWPMI_IO
OTG_HS_VBUS
DS13196 - Rev 6 page 48/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
E10
F13
A12
C14
C15
C12
42
43
51
69
70
78
102
103
111
121
122
139
PA10
PA11
E13 B15 44 71 104 123
D11
D13
B10
D12
A10
B13
A13
-
-
-
-
-
-
45
46
47
-
48
-
-
-
-
B13
A14
M6
A13
-
C13
B12
D12
-
J9
-
-
-
72
73
74
-
75
-
-
-
-
124
125
126
-
127
128
129
130
131
-
132
-
-
105
106
107
-
108
-
-
-
-
PA12
PA13(JTMS/
SWDIO)
VCAP
VSS
VDDLDO
VDD
PH13
PH14
PH15
PI0
VSS
PI1
I/O
I/O
I/O
I/O
S
S
S
S
I/O
I/O
S
I/O
-
-
-
-
B12
-
J10
-
A12
-
-
-
49
-
-
-
76
133
-
-
-
109
134
135
136
137
C11 A11 50 77 110 138
PI2
PI3
VSS
VDD
PA14(JTCK/
SWCLK)
PA15(JTDI)
I/O
I/O
S
S
I/O
I/O
PC10
I/O
I/O
I/O
FT_u
FT_u
FT_u
FT
-
-
-
-
FT_h2
FT_h2
FT_h2
FT_h2
-
FT_h2
FT_h2
FT_h2
-
-
FT
FT
FT_h0
TIM1_CH3, LPUART1_RX,
USART1_RX, OTG_HS_ID,
MDIOS_MDIO, LCD_B4, DCMI_D1/
PSSI_D1, LCD_B1, EVENTOUT
TIM1_CH4, LPUART1_CTS, SPI2_NSS/
I2S2_WS, UART4_RX, USART1_CTS/
USART1_NSS, FDCAN1_RX, LCD_R4,
EVENTOUT
TIM1_ETR, LPUART1_RTS, SPI2_SCK/
I2S2_CK, UART4_TX, USART1_RTS,
SAI2_FS_B, FDCAN1_TX, LCD_R5,
EVENTOUT
JTMS/SWDIO, EVENTOUT
-
-
-
-
TIM8_CH1N, UART4_TX, FDCAN1_TX,
FMC_D21, LCD_G2, EVENTOUT
TIM8_CH2N, UART4_RX, FDCAN1_RX,
FMC_D22, DCMI_D4/PSSI_D4,
LCD_G3, EVENTOUT
TIM8_CH3N, FMC_D23, DCMI_D11/
PSSI_D11, LCD_G4, EVENTOUT
TIM5_CH4, SPI2_NSS/I2S2_WS,
FMC_D24, DCMI_D13/PSSI_D13,
LCD_G5, EVENTOUT
-
TIM8_BKIN2, SPI2_SCK/I2S2_CK,
TIM8_BKIN2_COMP12, FMC_D25,
DCMI_D8/PSSI_D8, LCD_G6,
EVENTOUT
TIM8_CH4, SPI2_MISO/I2S2_SDI,
FMC_D26, DCMI_D9/PSSI_D9,
LCD_G7, EVENTOUT
TIM8_ETR, SPI2_MOSI/I2S2_SDO,
FMC_D27, DCMI_D10/PSSI_D10,
EVENTOUT
-
-
JTCK/SWCLK, EVENTOUT
JTDI, TIM2_CH1/TIM2_ETR,
HDMI_CEC, SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS, SPI6_NSS/
I2S6_WS, UART4_RTS, LCD_R3,
UART7_TX, LCD_B6, EVENTOUT
DFSDM1_CKIN5, DFSDM2_CKIN0,
SPI3_SCK/I2S3_CK, USART3_TX,
UART4_TX, OCTOSPIM_P1_IO1,
LCD_B1, SWPMI_RX, SDMMC1_D2,
DCMI_D8/PSSI_D8, LCD_R2,
EVENTOUT
-
-
-
-
OTG_HS_DM
OTG_HS_DP
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 49/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
B11
A11
-
D10
C10
E9
D9
C9
A9
-
-
B9
A8
B8
C11 52 79
B11
J14
C10
A10
B10 54 83 116 144
A9
C9
B9
K2
-
D9
C8
A7
53
-
-
-
-
-
-
-
-
-
-
-
80
-
81
82
-
-
112 140
113 141
-
114
115
125
126
-
142
143
84 117 145
85
86
-
-
118
119
120
121
146
147
148
149
87 122 150
153
154
PC11
PC12
VSS
PD0
PD1
PD2
PD3
PD4
PD5
VSS
VDDMMC
PD6
D8
-
A6
C8
B8
K6
D5
A8
-
-
-
-
88 123 151
-
-
-
-
-
-
124 152
PD7
VSS
VDDMMC
PG9
PG10
PG11
I/O
S
S
I/O
I/O
S
I/O
I/O
I/O
I/O
I/O
S
S
I/O
I/O
I/O
I/O
I/O
FT_h0
FT_h0
-
FT_h2
FT_h2
FT_h0
FT_h2
FT_h1
FT_h1
-
-
FT_sh3
FT_sh3
-
-
FT_sh3
FT_sh3
FT_sh3
DFSDM1_DATIN5, DFSDM2_DATIN0,
SPI3_MISO/I2S3_SDI, USART3_RX,
UART4_RX, OCTOSPIM_P1_NCS,
SDMMC1_D3, DCMI_D4/PSSI_D4,
LCD_B4, EVENTOUT
TRACED3, TIM15_CH1,
DFSDM2_CKOUT, SPI6_SCK/I2S6_CK,
SPI3_MOSI/I2S3_SDO, USART3_CK,
UART5_TX, SDMMC1_CK, DCMI_D9/
PSSI_D9, LCD_R6, EVENTOUT
-
DFSDM1_CKIN6, UART4_RX,
FDCAN1_RX, UART9_CTS, FMC_D2/
FMC_DA2, LCD_B1, EVENTOUT
DFSDM1_DATIN6, UART4_TX,
FDCAN1_TX, FMC_D3/FMC_DA3,
EVENTOUT
TRACED2, TIM3_ETR, TIM15_BKIN,
UART5_RX, LCD_B7, SDMMC1_CMD,
DCMI_D11/PSSI_D11, LCD_B2,
EVENTOUT
DFSDM1_CKOUT, SPI2_SCK/
I2S2_CK, USART2_CTS/USART2_NSS,
FMC_CLK, DCMI_D5/PSSI_D5,
LCD_G7, EVENTOUT
USART2_RTS, OCTOSPIM_P1_IO4,
FMC_NOE, EVENTOUT
USART2_TX, OCTOSPIM_P1_IO5,
FMC_NWE, EVENTOUT
-
-
SAI1_D1, DFSDM1_CKIN4,
DFSDM1_DATIN1, SPI3_MOSI/
I2S3_SDO, SAI1_SD_A, USART2_RX,
OCTOSPIM_P1_IO6, SDMMC2_CK,
FMC_NWAIT, DCMI_D10/PSSI_D10,
LCD_B2, EVENTOUT
DFSDM1_DATIN4, SPI1_MOSI/
I2S1_SDO, DFSDM1_CKIN1,
USART2_CK, SPDIFRX1_IN0,
OCTOSPIM_P1_IO7, SDMMC2_CMD,
FMC_NE1, EVENTOUT
-
-
SPI1_MISO/I2S1_SDI, USART6_RX,
SPDIFRX1_IN3, OCTOSPIM_P1_IO6,
SAI2_FS_B, SDMMC2_D0, FMC_NE2/
FMC_NCE, DCMI_VSYNC/PSSI_RDY,
EVENTOUT
OCTOSPIM_P2_IO6, SPI1_NSS/
I2S1_WS, LCD_G3, SAI2_SD_B,
SDMMC2_D1, FMC_NE3, DCMI_D2/
PSSI_D2, LCD_B2, EVENTOUT
LPTIM1_IN2, SPI1_SCK/I2S1_CK,
SPDIFRX1_IN0, OCTOSPIM_P2_IO7,
SDMMC2_D2, USART10_RX,
DCMI_D3/PSSI_D3, LCD_B3,
EVENTOUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 50/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
D6
E6
C7
-
-
-
E7
E8
D7
F7
B6
C6
A5
B5
D8
B7
C7
K7
-
K8
D7
A6
B6 56
C6
A5
B5
C5
A2
-
-
-
-
-
-
-
55
57
58
59
60
61
-
-
-
-
-
-
-
89
91
92
93
94
95
127
128
129
130
131
-
132
133 161
135
136
137
138
139
155
156
157
158
159
-
160
163
164
165
166
167
PG12
PG13
PG14
VSS
VDD
VSS
PG15
PB3(JTDO/
TRACESWO)
90 134 162 PB4(NJTRST)
PB5
PB6
PB7
BOOT0
PB8
S
S
S
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I
I/O
FT_sh3
FT_sh3
FT_sh3
-
-
-
FT_h1
FT_h0
FT_h0
FT_h0
FT_f
FT_fa
B
FT_fsh3
LPTIM1_IN1, OCTOSPIM_P2_NCS,
SPI6_MISO/I2S6_SDI, USART6_RTS,
SPDIFRX1_IN1, LCD_B4,
SDMMC2_D3, USART10_TX,
FMC_NE4, LCD_B1, EVENTOUT
TRACED0, LPTIM1_OUT,
SPI6_SCK/I2S6_CK, USART6_CTS/
USART6_NSS, SDMMC2_D6,
USART10_CTS/USART10_NSS,
FMC_A24, LCD_R0, EVENTOUT
TRACED1, LPTIM1_ETR,
SPI6_MOSI/I2S6_SDO, USART6_TX,
OCTOSPIM_P1_IO7, SDMMC2_D7,
USART10_RTS, FMC_A25, LCD_B0,
EVENTOUT
-
-
-
USART6_CTS/USART6_NSS,
OCTOSPIM_P2_DQS, USART10_CK,
FMC_SDNCAS, DCMI_D13/PSSI_D13,
EVENTOUT
JTDO/TRACESWO, TIM2_CH2,
SPI1_SCK/I2S1_CK, SPI3_SCK/
I2S3_CK, SPI6_SCK/I2S6_CK,
SDMMC2_D2, CRS_SYNC, UART7_RX,
EVENTOUT
NJTRST, TIM16_BKIN, TIM3_CH1,
SPI1_MISO/I2S1_SDI, SPI3_MISO/
I2S3_SDI, SPI2_NSS/I2S2_WS,
SPI6_MISO/I2S6_SDI, SDMMC2_D3,
UART7_TX, EVENTOUT
TIM17_BKIN, TIM3_CH2, I2C1_SMBA,
SPI1_MOSI/I2S1_SDO, I2C4_SMBA,
SPI3_MOSI/I2S3_SDO, SPI6_MOSI/
I2S6_SDO, FDCAN2_RX,
OTG_HS_ULPI_D7, LCD_B5,
FMC_SDCKE1, DCMI_D10/PSSI_D10,
UART5_RX, EVENTOUT
TIM16_CH1N, TIM4_CH1,
I2C1_SCL, HDMI_CEC, I2C4_SCL,
USART1_TX, LPUART1_TX,
FDCAN2_TX, OCTOSPIM_P1_NCS,
DFSDM1_DATIN5, FMC_SDNE1,
DCMI_D5/PSSI_D5, UART5_TX,
EVENTOUT
TIM17_CH1N, TIM4_CH2,
I2C1_SDA, I2C4_SDA, USART1_RX,
LPUART1_RX, DFSDM1_CKIN5,
FMC_NL, DCMI_VSYNC/PSSI_RDY,
EVENTOUT
-
TIM16_CH1, TIM4_CH3,
DFSDM1_CKIN7, I2C1_SCL,
I2C4_SCL, SDMMC1_CKIN,
UART4_RX, FDCAN1_RX,
SDMMC2_D4, SDMMC1_D4, DCMI_D6/
PSSI_D6, LCD_B6, EVENTOUT
-
-
-
-
-
-
PVD_IN
VPP
-
-
-
-
-
-
DS13196 - Rev 6 page 51/199
STM32H7B0xB
Pin descriptions
Pin name
(function after reset)
Pin type
I/O structure
Alternate functions Additional functions
C5
D5
D4
A4
-
C4
B4
-
-
-
-
-
B3
B4
C4
A4
K10
D4
A3
-
-
-
-
-
62
-
-
-
-
-
63
64
-
-
-
-
96
97
98
-
-
-
99
100
-
-
-
-
140
141
142
143
-
-
-
144
-
-
-
-
168
169
170
171
-
-
-
172
173
174
175
176
PB9
PE0
PE1
VCAP
VSS
PDR_ON
VDDLDO
VDD
PI4
PI5
PI6
PI7
I/O
I/O
I/O
S
S
S
S
S
I/O
I/O
I/O
I/O
FT_fsh3
FT_h2
FT_h2
-
-
-
-
-
FT_h2
FT_h2
FT_h2
FT_h2
-
-
-
-
-
-
-
-
-
H8
H9
J8
K9
R15
K12
G8
G9
H7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
S
S
S
S
S
S
S
S
S
-
-
-
-
-
-
-
-
-
1. The devices with SMPS correspond to commercial code STM32H7B0xIxxQ.
2. A non-connected I/O in a given package is configured as an output tied to V
SS
. Any analog peripheral connected to such a pad (such as OPAMP, VREF+) must be disabled.
3. Pxy_C and Pxy pins/balls are two separate pads (analog switch open). The analog switch is configured through a SYSCFG register. Refer to the product reference manual for a detailed description of the switch configuration bits.
4. There is a direct path between Pxy_C and Pxy pins/balls, through an analog switch. Pxy alternate functions are available on Pxy_C when the analog switch is closed. The analog switch is configured through a SYSCFG register. Refer to the product reference manual for a detailed description of the switch configuration bits.
TIM17_CH1, TIM4_CH4,
DFSDM1_DATIN7, I2C1_SDA,
SPI2_NSS/I2S2_WS, I2C4_SDA,
SDMMC1_CDIR, UART4_TX,
FDCAN1_TX, SDMMC2_D5,
I2C4_SMBA, SDMMC1_D5, DCMI_D7/
PSSI_D7, LCD_B7, EVENTOUT
LPTIM1_ETR, TIM4_ETR,
LPTIM2_ETR, UART8_RX,
SAI2_MCK_A, FMC_NBL0, DCMI_D2/
PSSI_D2, LCD_R0, EVENTOUT
LPTIM1_IN2, UART8_TX, FMC_NBL1,
DCMI_D3/PSSI_D3, LCD_R6,
EVENTOUT
-
-
-
-
-
TIM8_BKIN, SAI2_MCK_A,
TIM8_BKIN_COMP12, FMC_NBL2,
DCMI_D5/PSSI_D5, LCD_B4,
EVENTOUT
TIM8_CH1, SAI2_SCK_A, FMC_NBL3,
DCMI_VSYNC/PSSI_RDY, LCD_B5,
EVENTOUT
TIM8_CH2, SAI2_SD_A, FMC_D28,
DCMI_D6/PSSI_D6, LCD_B6,
EVENTOUT
TIM8_CH3, SAI2_FS_A, FMC_D29,
DCMI_D7/PSSI_D7, LCD_B7,
EVENTOUT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 52/199
Table 8. Port A alternate functions
Port
PA0
PA1
PA2
PA3
PA4
PA6
AF0
SYS
-
-
-
-
-
-
PA5 PWR_NDSTOP2
AF1
LPTIM1/
TIM1/2/16/17
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
TIM2_CH1/
TIM2_ETR
TIM2_CH2
TIM2_CH3
TIM2_CH4
-
TIM2_CH1/
TIM2_ETR
TIM1_BKIN
AF2
TIM5_CH1
TIM5_CH2
TIM5_CH3
TIM5_CH4
TIM5_ETR
-
TIM3_CH1
AF3
TIM8_ETR
LPTIM3_OUT
-
OCTOSPIM_
P1_CLK
-
TIM8_CH1N
TIM8_BKIN
AF4
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
TIM15_BKIN
TIM15_CH1N
TIM15_CH1
TIM15_CH2
-
-
-
AF5 AF6 AF7 AF8
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
DFSDM1/2/
I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/
SPI2/I2S2/
SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
AF9 AF10
FDCAN1/2/FMC/
LCD/
OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/
TIM13/14
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/OTG1_HS/
SAI2/SDMMC2/TIM8
AF11
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/
TIM1/8/
UART7/9/
USART10
SPI6_NSS/
I2S6_WS
-
-
I2S6_MCK
SPI1_NSS/
I2S1_WS
SPI1_SCK/
I2S1_CK
SPI1_MISO/
I2S1_SDI
-
-
DFSDM2_
CKIN1
-
SPI3_NSS/
I2S3_WS
-
OCTOSPIM_
P1_IO3
USART2_
CTS/
USART2_
NSS
USART2_
RTS
USART2_
TX
USART2_
RX
USART2_
CK
-
-
UART4_TX
UART4_RX
SAI2_SCK_B
-
SPI6_NSS/
I2S6_WS
SPI6_SCK/
I2S6_CK
SPI6_MISO/
I2S6_SDI
SDMMC2_CMD
OCTOSPIM_
P1_IO3
-
LCD_B2
-
-
TIM13_CH1
SAI2_SD_B
SAI2_MCK_B
-
OTG_HS_
ULPI_D0
-
OTG_HS_
ULPI_CK
TIM8_BKIN_COMP12
-
OCTOSPIM_
P1_DQS
-
-
-
-
MDIOS_MDC
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
-
-
MDIOS_MDIO
-
-
-
TIM1_BKIN_
COMP12
AF13
COMP/DCMI/
PSSI/LCD/
TIM1
-
-
-
-
DCMI_HSYNC/
PSSI_DE
PSSI_D14
DCMI_PIXCLK/
PSSI_PDCK
AF14
LCD/UART5
-
LCD_R2
LCD_R1
LCD_B5
LCD_
VSYNC
LCD_R4
LCD_G2
PA7 TIM1_CH1N TIM3_CH2 TIM8_CH1N
DFSDM2_
DATIN1
SPI1_MOSI/
I2S1_SDO
-
SPI6_MOSI/
I2S6_SDO
TIM14_CH1 OCTOSPIM_P1_IO2 FMC_SDNWE LCD_VSYNC
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
PA8
PA9
PA10
PA11
PA12
MCO1
-
-
-
-
TIM1_CH1
TIM1_CH2
TIM1_CH3
TIM1_CH4
TIM1_ETR -
-
-
-
TIM8_BKIN2
LPUART1_TX
LPUART1_RX
LPUART1_CTS
LPUART1_RTS
I2C3_SCL
I2C3_SMBA
-
-
-
SPI2_SCK/
I2S2_CK
-
-
SPI2_NSS/
I2S2_WS
SPI2_SCK/
I2S2_CK
-
-
-
UART4_RX
UART4_TX
USART1_
CK
USART1_
TX
USART1_
RX
USART1_
CTS/
USART1_NSS
USART1_
RTS
-
-
-
-
SAI2_FS_B
-
-
-
FDCAN1_
RX
FDCAN1_
TX
OTG_HS_
SOF
-
OTG_HS_
ID
-
-
UART7_RX
-
MDIOS_MDIO
-
-
TIM8_BKIN2_
COMP12
-
LCD_B4
-
-
LCD_B3
DCMI_D0/
PSSI_D0
DCMI_D1/
PSSI_D1
-
-
LCD_R6
LCD_R5
LCD_B1
LCD_R4
LCD_R5
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
PA13
PA14
JTMS/
SWDIO
JTCK/
SWCLK
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
EVENTOUT
EVENTOUT
PA15 JTDI
TIM2_CH1/
TIM2_ETR
HDMI_CEC
SPI1_NSS/
I2S1_WS
SPI3_NSS/
I2S3_WS
SPI6_NSS/
I2S6_WS
UART4_
RTS
LCD_R3 UART7_TX LCD_B6 EVENTOUT
Table 9. Port B alternate functions
Port
PB0
PB1
PB2
PB3
JTDO/
TRACESWO
PB4
PB5
PB6
AF0
SYS
-
-
-
-
RTC_OUT2
NJTRST
AF1
LPTIM1/
TIM1/2/16/17
TIM1_CH2N
TIM1_CH3N
-
TIM2_CH2
TIM16_BKIN
TIM17_BKIN
TIM16_CH1N
AF2
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
TIM3_CH3
TIM3_CH4
SAI1_D1
-
TIM3_CH1
TIM3_CH2
TIM4_CH1
AF3
TIM8_CH2N
TIM8_CH3N
-
-
-
-
-
AF4
CEC/DCMI/PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/TIM15/
USART1
DFSDM2_CKOUT
-
DFSDM1_CKIN1
-
-
I2C1_SMBA
I2C1_SCL
AF5
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
-
-
-
SPI1_SCK/
I2S1_CK
SPI1_MISO/
I2S1_SDI
SPI1_MOSI/
I2S1_SDO
HDMI_CEC
AF6
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
DFSDM1_CKOUT
DFSDM1_DATIN1
SAI1_SD_A
SPI3_SCK/
I2S3_CK
SPI3_MISO/
I2S3_SDI
I2C4_SMBA
I2C4_SCL
AF7
SDMMC1/SPI2/
I2S2/SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
-
-
SPI3_MOSI/
I2S3_SDO
-
SPI2_NSS/
I2S2_WS
SPI3_MOSI/
I2S3_SDO
USART1_TX
AF8
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
UART4_CTS
-
-
AF9 AF10
FDCAN1/2/FMC/LC
D/OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/TIM13/14
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/
SAI2/SDMMC2/
TIM8
LCD_R3
LCD_R6
OCTOSPIM_P1_CLK
OTG_HS_
ULPI_D1
OTG_HS_
ULPI_D2
OCTOSPIM_
P1_DQS
AF11
DFSDM1/2/
I2C4/LCD/MDIOS/
OCTOSPIM_P1/
SDMMC2/SWPMI1/
TIM1/8/UART7/9/
USART10
OCTOSPIM_P1_IO1
OCTOSPIM_
P1_IO0
-
SPI6_SCK/
I2S6_CK
SPI6_MISO/
I2S6_SDI
SPI6_MOSI/
I2S6_SDO
LPUART1_TX
SDMMC2_D2
SDMMC2_D3
FDCAN2_RX
FDCAN2_TX
CRS_SYNC
-
OTG_HS_
ULPI_D7
OCTOSPIM_
P1_NCS
UART7_RX
UART7_TX
LCD_B5
DFSDM1_DATIN5
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
-
-
-
-
-
FMC_SDCKE1
FMC_SDNE1
PB7 TIM17_CH1N TIM4_CH2 I2C1_SDA I2C4_SDA USART1_RX LPUART1_RX DFSDM1_CKIN5 FMC_NL
PB8 TIM16_CH1 TIM4_CH3 DFSDM1_CKIN7 I2C1_SCL FDCAN1_RX SDMMC2_D4 SDMMC1_D4
AF13
COMP/DCMI/
PSSI/LCD/TIM1
-
-
-
-
-
DCMI_D10/
PSSI_D10
DCMI_VSYNC/
PSSI_RDY
DCMI_D6/PSSI_D6
AF14
LCD/
UART5
LCD_G1
LCD_G0
-
-
-
UART5_RX
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
DCMI_D5/PSSI_D5 UART5_TX EVENTOUT
-
LCD_B6
EVENTOUT
EVENTOUT
PB9
PB10
PB11
PB12
PB13
PB14
PB15
-
-
-
-
-
-
RTC_REFIN
TIM17_CH1
TIM2_CH3
TIM2_CH4
TIM1_BKIN
TIM1_CH1N
TIM1_CH2N
TIM1_CH3N
TIM4_CH4
-
-
-
-
TIM12_CH1
TIM12_CH2
DFSDM1_DATIN7
LPTIM2_IN1
LPTIM2_ETR
OCTOSPIM_
P1_NCLK
LPTIM2_OUT
TIM8_CH2N
TIM8_CH3N
I2C1_SDA
I2C2_SCL
I2C2_SDA
I2C2_SMBA
-
SPI2_NSS/
I2S2_WS
SPI2_SCK/
I2S2_CK
I2C4_SCL
I2C4_SDA
DFSDM1_DATIN7
SDMMC1_CKIN
SDMMC1_CDIR
USART3_TX
UART4_RX
UART4_TX
-
DFSDM1_CKIN7
SPI2_NSS/
I2S2_WS
DFSDM1_DATIN1
USART3_RX
USART3_CK
DFSDM2_CKIN1
USART1_TX
USART1_RX
SPI2_SCK/
I2S2_CK
SPI2_MOSI/
I2S2_SDO
DFSDM1_CKIN1
SPI2_MISO/
I2S2_SDI
DFSDM1_DATIN2
DFSDM1_CKIN2
USART3_CTS/
USART3_NSS
USART3_RTS
-
-
-
-
UART4_RTS
UART4_CTS
FDCAN1_TX
OCTOSPIM_
P1_NCS
-
FDCAN2_RX
FDCAN2_TX
SDMMC2_D0
SDMMC2_D1
SDMMC2_D5
OTG_HS_
ULPI_D3
OTG_HS_
ULPI_D4
OTG_HS_
ULPI_D5
OTG_HS_
ULPI_D6
-
-
I2C4_SMBA
-
-
DFSDM2_DATIN1
-
-
-
SDMMC1_D5
-
-
-
SDMMC1_D0
-
-
DCMI_D7/PSSI_D7
-
-
TIM1_BKIN_COMP12
DCMI_D2/PSSI_D2
-
-
LCD_B7
LCD_G4
LCD_G5
UART5_RX
UART5_TX
LCD_CLK
LCD_G7
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
Table 10. Port C alternate functions
PC12
PC13
PC14
PC15
AF0
TRACED3
-
-
-
AF1
-
-
-
-
AF2
TIM15_CH1
-
-
-
AF3
-
-
-
-
AF4
DFSDM2_CKOUT
-
-
-
AF5
SPI6_SCK/
I2S6_CK
-
-
-
AF6
SPI3_MOSI/
I2S3_SDO
-
-
-
AF7
USART3_CK
-
-
-
AF8
UART5_TX
-
-
-
AF9
-
-
-
-
AF10
-
-
-
-
AF11
-
-
-
-
AF12
SDMMC1_CK
-
-
-
AF13
DCMI_D9/
PSSI_D9
-
-
-
AF14 AF15
Port
PC0
PC1
PC2
PC3 PWR_CSLEEP
PC4
PC5
PC6
PC7
PC8
PC9
PC10
PC11
SYS
-
-
-
TRACED0
PWR_CSTOP
-
-
-
TRGIO
TRACED1
MCO2
LPTIM1/
TIM1/2/16/17
-
-
-
-
-
-
-
-
-
-
-
-
PDM_SAI1/
TIM3/4/5/12/15
-
-
-
SAI1_D1
-
-
-
SAI1_D3
TIM3_CH1
TIM3_CH2
TIM3_CH3
TIM3_CH4
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
DFSDM1_CKIN0
DFSDM1_DATIN0
DFSDM1_CKIN1
DFSDM1_DATIN1
DFSDM1_CKIN2
DFSDM1_DATIN2
TIM8_CH1
TIM8_CH2
TIM8_CH3
TIM8_CH4
DFSDM1_CKIN5
CEC/DCMI/PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/TIM15/
USART1
-
DFSDM1_CKIN4
-
-
-
PSSI_D15
DFSDM1_CKIN3
DFSDM1_DATIN3
-
I2C3_SDA
DFSDM2_CKIN0
DFSDM1_DATIN5 DFSDM2_DATIN0
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
-
SPI2_MOSI/
I2S2_SDO
SPI2_MISO/
I2S2_SDI
SPI2_MOSI/
I2S2_SDO
I2S1_MCK
-
I2S2_MCK
I2S_CKIN
-
-
-
-
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
DFSDM1_DATIN4
SAI1_SD_A
DFSDM1_CKOUT
I2S3_MCK
-
-
-
-
-
-
SPI3_SCK/
I2S3_CK
SPI3_MISO/
I2S3_SDI
SDMMC1/
SPI2/I2S2/
SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
-
-
-
-
-
-
USART6_TX
USART6_RX
USART6_CK
-
USART3_TX
USART3_RX
LPUART1/
SAI2/SDMMC1/
SPDIFRX1/SPI6/
I2S6/UART4/5/8
SAI2_FS_B
-
-
-
-
-
SDMMC1_D0DIR
SDMMC1_D123DIR
UART5_RTS
UART5_CTS
UART4_TX
UART4_RX
FDCAN1/2/FMC/LCD
/OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/TIM13/14
FMC_A25
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/
SAI2/SDMMC2/
TIM8
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/
TIM1/8/
UART7/9/
USART10
OTG_HS_
ULPI_STP
LCD_G2
SDMMC2_CK
OCTOSPIM_P1_IO2
OCTOSPIM_P1_IO0
SPDIFRX1_IN2
SPDIFRX1_IN3
OCTOSPIM_
P1_IO4
OTG_HS_
ULPI_DIR
OTG_HS_
ULPI_NXT
-
OCTOSPIM_
P1_DQS
OCTOSPIM_
P1_IO5
OCTOSPIM_
P1_IO6
-
-
-
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
FMC_SDNWE
MDIOS_MDC
FMC_SDNE0
FMC_SDCKE0
FMC_SDNE0
COMP/DCMI/
PSSI/LCD/
TIM1
-
-
-
-
-
FMC_SDCKE0 COMP1_OUT
FMC_NWAIT
FMC_NE1
FMC_NE2/
FMC_NCE
OCTOSPIM_P1_IO0
OCTOSPIM_P1_IO1
OCTOSPIM_P1_NCS
SDMMC2_D6
SDMMC2_D7
FMC_INT
LCD_G3
LCD_B1
-
-
SWPMI_TX
SWPMI_RX
SWPMI_
SUSPEND
SWPMI_RX
-
SDMMC1_D6
SDMMC1_D7
SDMMC1_D0
SDMMC1_D1
SDMMC1_D2
SDMMC1_D3
DCMI_D0/
PSSI_D0
DCMI_D1/
PSSI_D1
DCMI_D2/
PSSI_D2
DCMI_D3/
PSSI_D3
DCMI_D8/
PSSI_D8
DCMI_D4/
PSSI_D4
LCD/UART5
LCD_R5
LCD_G5
-
-
LCD_R7
LCD_DE
LCD_HSYNC
LCD_G6
-
LCD_B2
LCD_R2
LCD_B4
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
LCD_R6
-
-
-
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
Table 11. Port D alternate functions
Port
PD0
PD1
PD2 TRACED2
PD3
PD4
PD5
PD6
PD7
PD8
PD9
PD10
PD11
PD12
PD13
AF0
SYS
-
-
-
-
-
-
-
-
-
-
-
-
-
AF1
-
-
-
-
-
-
-
-
AF2
-
-
TIM3_ETR
-
-
-
SAI1_D1
-
AF3
LPTIM1/
TIM1/2/16/17
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
CEC/DCMI/PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/TIM15/
USART1
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/
SPI2/I2S2/
SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
FDCAN1/2/FMC/LC
D/OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/
TIM13/14
DFSDM1_CKIN6
DFSDM1_DATIN6
-
DFSDM1_CKOUT
-
-
DFSDM1_CKIN4 DFSDM1_DATIN1
SPI3_MOSI/
I2S3_SDO
DFSDM1_DATIN4
AF4
TIM15_BKIN
-
-
-
-
-
-
AF5
-
-
-
SPI2_SCK/
I2S2_CK
-
-
AF6
-
-
-
-
-
-
SAI1_SD_A
SPI1_MOSI/
I2S1_SDO
DFSDM1_CKIN1
AF7
-
-
-
USART2_CTS/
USART2_NSS
USART2_RTS
USART2_TX
USART2_RX
USART2_CK
AF8
UART4_RX
UART4_TX
UART5_RX
-
-
-
-
-
AF9
FDCAN1_RX
FDCAN1_TX
LCD_B7
-
-
-
-
SPDIFRX1_IN0
AF10
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/SAI2/
SDMMC2/TIM8
AF11
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/
TIM1/8/
UART7/9/
USART10
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
AF13
COMP/
DCMI/
PSSI/LCD/
TIM1
-
-
-
-
OCTOSPIM_P1_IO4
OCTOSPIM_P1_IO5
UART9_CTS
-
-
-
-
-
OCTOSPIM_P1_IO6 SDMMC2_CK
FMC_D2/
FMC_DA2
FMC_D3/
FMC_DA3
SDMMC1_CMD
DCMI_D11/
PSSI_D11
FMC_CLK
DCMI_D5/
PSSI_D5
FMC_NOE
FMC_NWE
FMC_NWAIT
-
-
-
-
DCMI_D10/
PSSI_D10
AF14
LCDUART5
LCD_B1
-
LCD_B2
LCD_G7
-
-
LCD_B2
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
OCTOSPIM_P1_IO7 SDMMC2_CMD FMC_NE1 EVENTOUT
-
-
-
-
LPTIM1_IN1
LPTIM1_OUT
-
-
-
-
TIM4_CH1
TIM4_CH2
DFSDM1_CKIN3
DFSDM1_DATIN3
DFSDM1_CKOUT
LPTIM2_IN2
LPTIM2_IN1
-
-
-
DFSDM2_CKOUT
I2C4_SMBA
I2C4_SCL
I2C4_SDA -
-
-
-
-
-
-
-
-
-
-
USART3_TX
USART3_RX
USART3_CK
USART3_CTS/
USART3_NSS
USART3_RTS
-
-
-
-
-
SPDIFRX1_IN1
-
-
OCTOSPIM_P1_IO0
OCTOSPIM_P1_IO1
OCTOSPIM_P1_IO3
-
-
-
SAI2_SD_A
SAI2_FS_A
SAI2_SCK_A
-
-
-
-
-
UART9_RTS
FMC_D13/
FMC_DA13
FMC_D14/
FMC_DA14
FMC_D15/
FMC_DA15
FMC_A16/
FMC_CLE
FMC_A17/
FMC_ALE
FMC_A18
-
-
-
-
DCMI_D12/
PSSI_D12
DCMI_D13/
PSSI_D13
LCD_B3
-
-
-
-
-
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
PD14
PD15 -
-
-
TIM4_CH3
TIM4_CH4 -
-
-
-
-
-
-
-
-
UART8_CTS
UART8_RTS -
-
-
UART9_RX
UART9_TX
FMC_D0/
FMC_DA0
FMC_D1/
FMC_DA1
-
-
-
EVENTOUT
EVENTOUT
Table 12. Port E alternate functions
Port
PE0
PE1
PE2
PE3
PE4
PE5
AF0
SYS
-
-
TRACECLK
TRACED0
TRACED1
TRACED2
PE6 TRACED3
PE7
PE8
PE9
PE10
PE11
PE12
PE13
PE14
PE15 -
-
-
-
-
-
-
-
-
AF1 AF2 AF3
LPTIM1/
TIM1/2/16/17
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
AF4
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
AF5 AF6 AF7 AF8 AF9
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
DFSDM1/2/
I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/
SPI2/I2S2/
SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
FDCAN1/2/FMC/LC
D/OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/
TIM13/14
LPTIM1_ETR
LPTIM1_IN2
-
-
-
-
TIM1_BKIN2
TIM1_ETR
TIM1_CH1N
TIM1_CH1
TIM1_CH2N
TIM1_CH2
TIM1_CH3N
TIM1_CH3
TIM1_CH4
TIM1_BKIN
TIM4_ETR
-
SAI1_CK1
-
SAI1_D2
SAI1_CK2
SAI1_D1
-
-
-
-
-
-
-
-
-
-
-
-
-
DFSDM1_DATIN3
DFSDM1_CKIN3
-
DFSDM1_DATIN2
DFSDM1_CKIN2
DFSDM1_CKOUT
DFSDM1_DATIN4
DFSDM1_CKIN4
DFSDM1_DATIN5
DFSDM1_CKIN5
LPTIM2_ETR
-
-
TIM15_BKIN
TIM15_CH1N
TIM15_CH1
TIM15_CH2
-
-
-
-
-
-
-
-
-
-
-
SPI4_SCK
-
SPI4_NSS
SPI4_MISO
SPI4_MOSI
-
-
-
-
SPI4_NSS
SPI4_SCK
SPI4_MISO
SPI4_MOSI
-
-
-
SAI1_MCLK_A
SAI1_SD_B
SAI1_FS_A
SAI1_SCK_A
SAI1_SD_A
-
-
-
-
-
-
-
-
-
AF10
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/SAI2/
SDMMC2/TIM8
AF11
DFSDM1/2/
I2C4/LCD/MDIOS/
OCTOSPIM_P1/
SDMMC2/SWPMI1/
TIM1/8/UART7/9/
USART10
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
AF13
COMP/DCMI/
PSSI/LCD/TIM1
AF14
LCD/
UART5
AF15
SYS
-
-
-
-
-
-
-
-
-
-
-
-
UART7_RX
UART7_TX
UART7_RTS
UART7_CTS
UART8_Rx
UART8_Tx
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
OCTOSPIM_P1_IO2
-
SAI2_MCK_A
-
-
-
-
-
-
SAI2_MCK_B
OCTOSPIM_P1_IO4
OCTOSPIM_P1_IO5
OCTOSPIM_P1_IO6
OCTOSPIM_P1_IO7
SAI2_SD_B
SAI2_SCK_B
SAI2_FS_B
SAI2_MCK_B
-
-
USART10_RX
USART10_TX
-
-
TIM1_BKIN2_
COMP12
-
-
-
-
OCTOSPIM_P1_NCS
-
-
-
USART10_CK
FMC_NBL0
FMC_NBL1
FMC_A23
FMC_A19
FMC_A20
FMC_A21
FMC_A22
DCMI_D2/
PSSI_D2
DCMI_D3/
PSSI_D3
-
-
DCMI_D4/
PSSI_D4
DCMI_D6/
PSSI_D6
DCMI_D7/
PSSI_D7
LCD_R0
LCD_R6
-
-
LCD_B0
LCD_G0
LCD_G1
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
FMC_D4/
FMC_DA4
FMC_D5/
FMC_DA5
FMC_D6/
FMC_DA6
FMC_D7/
FMC_DA7
FMC_D8/
FMC_DA8
FMC_D9/
FMC_DA9
-
COMP2_OUT
-
-
-
-
-
-
-
LCD_G3
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
COMP1_
OUT
LCD_B4 EVENTOUT
FMC_D10/
FMC_DA10
FMC_D11/
FMC_DA11
COMP2_OUT
-
LCD_DE
LCD_CLK
FMC_D12/
FMC_DA12
TIM1_BKIN_COMP12 LCD_R7
EVENTOUT
EVENTOUT
EVENTOUT
Table 13. Port F alternate functions
Port
PF0
PF1
PF2
PF3
PF4
PF5
PF6
PF7
PF8
PF9
PF10
PF11
PF12
PF13
PF14
PF15
AF0 AF1
SYS
LPTIM1/
TIM1/2/16/17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TIM16_CH1
TIM17_CH1
TIM16_CH1N
TIM17_CH1N
TIM16_BKIN
-
-
-
-
-
-
-
-
-
-
-
AF2
PDM_SAI1/
TIM3/4/5/12/15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SAI1_D3
AF3
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
-
-
-
-
-
-
-
-
-
-
-
-
-
DFSDM1_DATIN6
DFSDM1_CKIN6
-
AF4
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
I2C2_SDA
I2C2_SCL
I2C2_SMBA
-
-
-
-
-
-
-
AF5 AF6 AF7
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/SPI4/5/
SPI6/I2S6
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/SPI2/
I2S2/SPI3/
I2S3/SPI6/
I2S6/UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
-
-
-
-
-
-
SPI5_NSS
SPI5_SCK
SPI5_MISO
SPI5_MOSI
-
-
-
-
-
-
SAI1_SD_B
SAI1_MCLK_B
SAI1_SCK_B
SAI1_FS_B
-
-
-
-
-
-
UART7_Rx
UART7_Tx
UART7_RTS
UART7_CTS
AF8
-
-
-
-
-
-
-
-
-
-
AF9
FDCAN1/2/FMC/LCD/
OCTOSPIM_P1/2/
SDMMC2/SPDIFRX1/
TIM13/14
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/OTG1_HS/
SAI2/SDMMC2/TIM8
OCTOSPIM_P2_IO0
OCTOSPIM_P2_IO1
OCTOSPIM_P2_IO2
OCTOSPIM_P2_IO3
OCTOSPIM_P2_CLK
OCTOSPIM_
P2_NCLK
-
-
TIM13_CH1
TIM14_CH1
AF10
-
-
-
-
-
-
OCTOSPIM_P1_IO3
OCTOSPIM_P1_IO2
OCTOSPIM_P1_IO0
OCTOSPIM_P1_IO1
AF11
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/TIM1/8/
UART7/9/
USART10
-
-
-
-
-
-
-
-
-
-
PSSI_D15
-
-
SPI5_MOSI -
-
-
-
-
OCTOSPIM_P1_CLK -
SAI2_SD_B -
-
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
FMC_A0
FMC_A1
FMC_A2
FMC_A3
FMC_A4
FMC_A5
AF13
COMP/
DCMI/
PSSI/LCD/
TIM1
-
-
-
-
-
-
AF14
LCD/
UART5
-
-
-
-
-
-
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
-
-
-
-
-
FMC_SDNRAS
-
-
-
-
DCMI_D11/
PSSI_D11
DCMI_D12/
PSSI_D12
-
-
-
-
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
LCD_DE EVENTOUT
EVENTOUT
-
I2C4_SMBA
I2C4_SCL
I2C4_SDA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
OCTOSPIM_
P1_NCLK
OCTOSPIM_
P2_DQS
-
-
-
-
-
-
-
-
-
-
FMC_A6
FMC_A7
FMC_A8
FMC_A9
-
-
-
-
-
-
-
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
Table 14. Port G alternate functions
AF6 AF7 AF8 AF9
Port
PG0
PG1
PG2
PG3
PG4
PG5
PG6
PG7
PG8
PG9
PG10
PG11
PG12
PG13
PG14
PG15
AF0
SYS
-
-
-
-
-
-
-
-
-
-
-
-
-
TRACED0
TRACED1
-
AF1 AF2 AF3 AF4 AF5
LPTIM1/
TIM1/2/16/17
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/
SPI4/5/
SPI6/I2S6
DFSDM1/2/
I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/
SPI2/I2S2/
SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
FDCAN1/2/FMC/LCD
/OCTOSPIM_P1/2/
SDMMC2/SPDIFRX1/
TIM13/14
-
-
-
-
TIM1_BKIN2
TIM1_ETR
TIM17_BKIN
-
-
-
-
LPTIM1_IN2
LPTIM1_IN1
LPTIM1_OUT
LPTIM1_ETR
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TIM8_BKIN
TIM8_BKIN2
-
-
-
-
TIM8_ETR
-
OCTOSPIM_P2_IO6
-
OCTOSPIM_P2_NCS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
OCTOSPIM_P2_IO4
OCTOSPIM_P2_IO5
-
-
-
-
-
-
SPI6_NSS/
I2S6_WS
SPI1_MISO/
I2S1_SDI
SPI1_NSS/
I2S1_WS
SPI1_SCK/
I2S1_CK
SPI6_MISO/
I2S6_SDI
SPI6_SCK/
I2S6_CK
SPI6_MOSI/
I2S6_SDO
-
SAI1_MCLK_A USART6_CK
-
-
-
-
-
-
-
USART6_RTS
USART6_RX
-
-
USART6_RTS
USART6_CTS/
USART6_NSS
USART6_TX
USART6_CTS/
USART6_NSS
-
SPDIFRX1_IN2
SPDIFRX1_IN3
-
SPDIFRX1_IN0
SPDIFRX1_IN1
-
-
-
OCTOSPIM_P2_DQS
-
OCTOSPIM_P1_IO6
LCD_G3
OCTOSPIM_P2_IO7
LCD_B4
-
OCTOSPIM_P1_IO7
OCTOSPIM_P2_DQS
AF10
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/SAI2/
SDMMC2/TIM8
-
-
-
-
-
-
AF11
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/
TIM1/8/
UART7/9/
USART10
UART9_RX
UART9_TX
TIM8_BKIN_
COMP12
TIM8_BKIN2_
COMP12
TIM1_BKIN2_
COMP12
-
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
FMC_A10
FMC_A11
FMC_A12
FMC_A13
FMC_A14/
FMC_BA0
FMC_A15/
FMC_BA1
OCTOSPIM_P1_NCS
-
-
-
-
-
AF13
COMP/DCMI/
PSSI/LCD/
TIM1
-
-
-
-
-
AF14
LCD/
UART5
-
-
-
-
-
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
FMC_NE3
FMC_INT
FMC_SDCLK
EVENTOUT
DCMI_D12/
PSSI_D12
DCMI_D13/
PSSI_D13
LCD_R7 EVENTOUT
LCD_CLK EVENTOUT
LCD_G7 EVENTOUT
SAI2_FS_B
SAI2_SD_B
SDMMC2_D2
SDMMC2_D3
SDMMC2_D6
SDMMC2_D7
-
SDMMC2_D0
SDMMC2_D1
USART10_RX
USART10_TX
USART10_CTS/
USART10_NSS
USART10_RTS
-
FMC_NE2/
FMC_NCE
FMC_NE3
-
DCMI_VSYNC/
PSSI_RDY
DCMI_D2/
PSSI_D2
DCMI_D3/
PSSI_D3
-
LCD_B2 EVENTOUT
LCD_B3
EVENTOUT
EVENTOUT
LCD_B1 EVENTOUT
-
-
-
-
-
DCMI_D13/
PSSI_D13
LCD_R0
LCD_B0
-
EVENTOUT
EVENTOUT
EVENTOUT
Table 15. Port H alternate functions
Port
PH0
PH1
PH2
PH3
PH4
PH5
PH6
PH7
PH8
PH9
PH10
PH11
PH12
PH13
PH14
PH15
AF0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AF1
SYS
LPTIM1/
TIM1/2/16/17
-
-
LPTIM1_IN2
-
-
-
-
-
-
-
-
-
-
-
-
-
AF2
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/
LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
-
-
-
-
-
-
TIM12_CH1
-
TIM5_ETR
TIM12_CH2
TIM5_CH1
TIM5_CH2
TIM5_CH3
-
-
-
AF3
-
-
-
-
-
-
-
-
-
-
-
-
-
TIM8_CH1N
TIM8_CH2N
TIM8_CH3N
AF4
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
-
-
-
-
I2C2_SCL
I2C2_SDA
I2C2_SMBA
I2C3_SCL
I2C3_SDA
I2C3_SMBA
I2C4_SMBA
I2C4_SCL
I2C4_SDA
-
-
-
AF5 AF6 AF7 AF8 AF9 AF10
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/SPI4/5/
SPI6/I2S6
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/SPI2/
I2S2/SPI3/I2S3/
SPI6/I2S6/
UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
FDCAN1/2/FMC/LCD
/OCTOSPIM_P1/2/
SDMMC2/SPDIFRX1/
TIM13/14
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/SAI2/
SDMMC2/TIM8
-
-
-
-
-
SPI5_NSS -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
OCTOSPIM_P1_IO4
OCTOSPIM_P1_IO5
LCD_G5
-
-
-
SAI2_SCK_B
SAI2_MCK_B
OTG_HS_
ULPI_NXT
-
AF11
DFSDM1/2/
I2C4/LCD/
MDIOS/
OCTOSPIM_P1/
SDMMC2/
SWPMI1/TIM1/8/
UART7/9/
USART10
-
-
-
-
AF12
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
-
-
FMC_SDCKE0
FMC_SDNE0
-
-
FMC_SDNWE
AF13
COMP/DCMI/
PSSI/LCD/TIM1
LCD/
UART5
-
-
-
-
PSSI_D14
AF14
-
-
LCD_R0
LCD_R1
LCD_G4
AF15
SYS
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
SPI5_SCK
SPI5_MISO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UART4_TX
UART4_RX
-
-
-
-
-
-
-
-
FDCAN1_TX
FDCAN1_RX
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FMC_SDNE1
FMC_SDCKE1
FMC_D16
FMC_D17
FMC_D18
FMC_D19
FMC_D20
FMC_D21
FMC_D22
FMC_D23
-
DCMI_D8/
PSSI_D8
DCMI_D9/
PSSI_D9
DCMI_HSYNC/
PSSI_DE
DCMI_D0/
PSSI_D0
DCMI_D1/
PSSI_D1
DCMI_D2/
PSSI_D2
DCMI_D3/
PSSI_D3
-
DCMI_D4/
PSSI_D4
DCMI_D11/
PSSI_D11
-
-
-
LCD_R2
LCD_R3
LCD_R4
LCD_R5
LCD_R6
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
LCD_G2 EVENTOUT
LCD_G3 EVENTOUT
LCD_G4 EVENTOUT
Table 16. Port I alternate functions
Port
PI0
PI1
PI2
PI3
PI4
PI5
PI6
PI7
PI8
PI9
PI10
AF0
-
-
-
-
-
-
-
-
-
-
-
AF1
-
-
-
-
-
-
-
-
-
-
-
AF2
TIM5_CH4
-
-
-
-
-
-
-
-
-
-
AF3
SYS
LPTIM1/
TIM1/2/16/17
PDM_SAI1/
TIM3/4/5/12/15
DFSDM1/LPTIM2/3/
LPUART1/
OCTOSPIM_P1/2/
TIM8
-
TIM8_BKIN2
TIM8_CH4
TIM8_ETR
TIM8_BKIN
TIM8_CH1
TIM8_CH2
TIM8_CH3
-
OCTOSPIM_P2_IO0
OCTOSPIM_P2_IO1
AF4
CEC/DCMI/
PSSI/
DFSDM1/2/
I2C1/2/3/4/
LPTIM2/
TIM15/
USART1
AF5
CEC/SPI1/
I2S1/SPI2/
I2S2/SPI3/
I2S3/SPI4/5/
SPI6/I2S6
-
-
-
SPI2_NSS/
I2S2_WS
SPI2_SCK/
I2S2_CK
SPI2_MISO/
I2S2_SDI
AF6 AF7 AF8
DFSDM1/2/I2C4/
OCTOSPIM_P1/
SAI1/SPI3/I2S3/
UART4
SDMMC1/SPI2/
I2S2/SPI3/
I2S3/SPI6/
I2S6/UART7/
USART1/2/3/6
LPUART1/
SAI2/
SDMMC1/
SPDIFRX1/
SPI6/I2S6/
UART4/5/8
FDCAN1/2/FMC/L
CD/
OCTOSPIM_P1/2/
SDMMC2/
SPDIFRX1/
TIM13/14
-
-
-
-
-
-
-
-
-
AF9
-
-
-
-
-
-
-
-
-
-
-
SPI2_MOSI/
I2S2_SDO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UART4_RX
-
-
-
-
-
-
-
FDCAN1_RX
-
AF10
CRS/FMC/LCD/
OCTOSPIM_P1/
OTG1_FS/
OTG1_HS/SAI2/
SDMMC2/TIM8
DFSDM1/2/I2C4/LCD/
MDIOS/OCTOSPIM_P1/
SDMMC2/SWPMI1/
TIM1/8/UART7/9/
USART10
FMC/LCD/
MDIOS/
SDMMC1/
TIM1/8
-
-
-
-
SAI2_MCK_A
SAI2_SCK_A
SAI2_SD_A
SAI2_FS_A
-
-
-
AF11
-
TIM8_BKIN2_COMP12
-
-
TIM8_BKIN_COMP12
-
-
-
-
-
-
AF12
FMC_D30
FMC_D31
AF13
COMP/DCMI/
PSSI/LCD/TIM1
FMC_D24
FMC_D25
FMC_D26
FMC_D27
FMC_NBL2
FMC_NBL3
FMC_D28
FMC_D29
-
DCMI_D13/
PSSI_D13
DCMI_D8/
PSSI_D8
DCMI_D9/
PSSI_D9
DCMI_D10/
PSSI_D10
DCMI_D5/
PSSI_D5
DCMI_VSYNC/
PSSI_
RDY
DCMI_D6/
PSSI_D6
DCMI_D7/
PSSI_D7
-
-
PSSI_D14
AF14
LCD/
UART5
AF15
SYS
LCD_G5 EVENTOUT
LCD_G6 EVENTOUT
LCD_G7 EVENTOUT
-
LCD_B4
LCD_B5
LCD_B6
LCD_B7
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
EVENTOUT
-
LCD_
VSYNC
LCD_
HSYNC
EVENTOUT
EVENTOUT
EVENTOUT
PI11 OCTOSPIM_P2_IO2 LCD_G6
OTG_HS_
ULPI_DIR
PSSI_D15 EVENTOUT
6
6.1
6.1.1
6.1.2
6.1.3
6.1.4
6.1.5
STM32H7B0xB
Electrical characteristics
Electrical characteristics
Parameter conditions
Unless otherwise specified, all voltages are referenced to V
SS
.
Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst conditions of junction temperature, supply voltage and frequencies by tests in production on 100% of the devices with an junction temperature at T
J
= 25 °C and T
J
= T
Jmax
(given by the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics are indicated in the table footnotes. Based on characterization, the minimum and maximum values refer to sample tests and represent the mean value plus or minus three times the standard deviation (mean±3σ).
Typical values
Unless otherwise specified, typical data are based on T
J
= 25 °C, V
DD
= 3.3 V (for the 1.62 V ≤ V
DD
≤ 3.6 V voltage range). They are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from a standard diffusion lot over the full temperature range, where 95% of the devices have an error less than or equal to the value indicated (mean±2σ).
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are not tested.
Loading capacitor
The loading conditions used for pin parameter measurement are shown in
Figure 10. Pin loading conditions .
Pin input voltage
The input voltage measurement on a pin of the device is described in
Figure 11. Pin input voltage .
Figure 10. Pin loading conditions
C = 50 pF
MCU pin
Figure 11. Pin input voltage
MCU pin
VIN
DS13196 - Rev 6 page 62/199
STM32H7B0xB
Parameter conditions
6.1.6
Power supply scheme
Figure 12. Power supply scheme
V
DDSMPS VDDSMPS
10 μF
4.7 μF
4.7
μ F
4.7 μF
SMPS enabled
2.2 μF
2.2 μH
LDO enabled
VLXSMPS
SMPS disabled
100 pF or 200 pF
VFBSMPS
VSSSMPS
VCAP1/2
100 nF (1)
VCAP3
LDO disabled
VDDLDO
Two different possible use cases
V
DD
100nF
PDR_ON
V
DD
SMPS
Switched Mode
Power Supply step down converter
LDO
Voltage regulator
V
DDMMC
1 μF
100 nF
VDDMMC
100 nF
Two different possible use cases
100 nF (1)
VDD
VDD
4.7 μF
100 nF (1)
VSS
Two different possible use cases
Battery
1 μF
VBAT
100 nF
V
DDMMC
IOs
V
DD
IOs
POR/PDR
V
DD domain
Power switch
BKUP
IOs
V
V
DDA
REF+
5V
4.7 μF
3.3V
1 μF
1 μF 100 nF
Two different possible use cases
VDD50USB
VDD33USB
47W
1 μF
1 μF 1 μF 100 nF
Three different possible use cases
VDDA
100 nF
VREF+
VREF-
VSSA
USB regulator
USB FS
IOs
Analog domain
Core domain
Backup domain
Defines different use case options
Define power domaines
DS13196 - Rev 6 page 63/199
STM32H7B0xB
Absolute maximum ratings
Note:
Caution:
6.1.7
1.
100 nF filtering capacitor on each package pin.
2.
A tolerance of +/- 20% is acceptable on decoupling capacitors.
Refer to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development(AN5307) for more details.
Each power supply pair (V
DD
/V
SS
, V
DDA
/V
SSA
...) must be decoupled with filtering ceramic capacitors as shown above. These capacitors must be placed as close as possible to, or below, the appropriate pins on the underside of the PCB to ensure good operation of the device. It is not recommended to remove filtering capacitors to reduce PCB size or cost. This might cause incorrect operation of the device.
Current consumption measurement
Figure 13. Current consumption measurement scheme
LDO ON
I
DD
_V
BAT
V
BAT
SMPS ON
I
DD
_V
BAT
V
BAT
I
DD
V
DDMMC
V
DD
V
DDLDO
V
DDA
I
DD
V
DDMMC
V
DD
V
DDSMPS
V
DDA
6.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in
Table 17. Voltage characteristics ,
Table 18. Current characteristics
, and
Table 19. Thermal characteristics may cause permanent damage to the device. These are
stress ratings only and the functional operation of the device at these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Device mission profile (application conditions) is compliant with JEDEC JESD47 Qualification Standard, extended mission profiles are available on demand.
Table 17. Voltage characteristics
All main power (V
DD
, V
DDA
, V
DD33USB
, V
DDMMC external power supply, in the permitted range.
, V
DDSMPS
, V
BAT
) and ground (V
SS
, V
SSA
) pins must always be connected to the
Symbols Ratings Min Max Unit
V
DDX
− V
SS
External main supply voltage (including V
DD
V
DDA
, V
DD33USB
, V
DDMMC,
V
BAT
, V
REF+
)
, V
DDLDO
, V
DDSMPS
,
−0.3
4.0
V
V
IN
Input voltage on FT_xxx pins
Input voltage on TT_xx pins
V
SS
−0.3
Min(V
DD
, V
DDA
,
V
DD33USB
, V
DDMMC
,
V
BAT
4.0
V
V
Input voltage on BOOT0 pin
Input voltage on any other pins
V
SS
−0.3
V
SS
V
SS
−0.3
9.0
4.0
V
V
|ΔV
DDX
| Variations between different V
DDX
power pins of the same domain 50 mV
DS13196 - Rev 6 page 64/199
DS13196 - Rev 6
STM32H7B0xB
Absolute maximum ratings
Symbols Ratings
|V
SSx
−V
SS
| Variations between all the different ground pins
Min
-
Max
50
1. V
IN
maximum value must always be respected. Refer to
Table 62. I/O current injection susceptibility
for the maximum allowed injected current values.
2. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
3. This formula has to be applied on power supplies related to the I/O structure described by the pin definition table.
Unit mV
Table 18. Current characteristics
Symbols
ΣIV
DD
ΣIV
SS
IV
DD
IV
SS
I
IO
Ratings
Total current into sum of all V
DD
power lines (source)
Total current out of sum of all V
SS
Maximum current into each V
DD
Maximum current out of each V
SS
ground pin (sink)
Output current sunk by any I/O and control pin
Max
620
620
100
100
Unit
20 mA
I
ΣI
(PIN)
INJ(PIN)
Total output current sunk by sum of all I/Os and control pins (2)
Total output current sourced by sum of all I/Os and control pins (2)
Injected current on FT_xxx, TT_xx, RST and B pins except PA4, PA5
Injected current on PA4, PA5
Total injected current (sum of all I/Os and control pins) (5)
140
140
−5/+0
−0/0
ΣI
INJ(PIN)
±25
1. All main power (V
DD
, V
DDA
, V
DDSMPS
, V
DDLDO
, V
DD33USB
, V
DDMMC
) and ground (V connected to the external power supplies, in the permitted range.
SS
, V
SSA
) pins must always be
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. A positive injection is induced by V
IN
>V
DD
while a negative injection is induced by V
IN
<V
SS
. I
INJ(PIN)
must never be
4. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified maximum value.
5. When several inputs are submitted to a current injection, the maximum ∑I
INJ(PIN)
is the absolute sum of the positive and negative injected currents (instantaneous values).
Table 19. Thermal characteristics
Symbol
T
STG
T
J
Storage temperature range
Ratings
Maximum junction temperature
1. The junction temperature is limited to 105 °C in the VOS0 voltage range.
Value
−65 to +150
Unit
°C page 65/199
6.3
6.3.1
STM32H7B0xB
Operating conditions
Operating conditions
General operating conditions
Symbol
V
DD
V
DDLDO
V
DDSMPS
V
DDMMC
V
DD33USB
V
DDA
V
BAT
Table 20. General operating conditions
Parameter
Standard operating voltage
Supply voltage for the internal regulator
Operating conditions Min Typ
-
VDDLDO ≤ VDD
1.62
1.62
-
-
1.2
-
Supply voltage for the internal SMPS Step-down converter
VDDSMPS = VDD 1.62
-
Standard operating voltage for independent MMC
I/Os
Standard operating voltage, USB domain
Analog operating voltage
Backup operating voltage
Indenpent MMC I/Os used
Independent MMC I/Os not used V
DDMMC
=
V
DD
USB used
1.62
3.0
0
1.62
USB not used
ADC or COMP used
DAC used
1.62
1.8
OPAMP used
VREFBUF used
ADC, DAC, OPAMP,
COMP, VREFBUF not used
-
2.0
1.8
0
1.2
TT_xx I/O
BOOT0
−0.3
0
-
-
-
-
-
-
-
-
-
-
-
-
V
IN
V
CORE
I/O Input voltage
Internal regulator ON (LDO or SMPS)
Regulator OFF: external V
CORE
voltage must be supplied from external regulator on VCAP pins
Max
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
3.6
All I/O except BOOT0 and TT_xx
−0.3
-
VOS3 (max frequency
88 MHz)
VOS2 (max frequency
160 MHz)
VOS1 (max frequency
225 MHz)
VOS0 (max frequency
280 MHz)
VOS3 (max frquency
88 MHz)
VOS2 (max frequency
160 MHz)
VOS1 (max frequency
225 MHz)
0.95
1.0
1.05
1.10
1.15
1.20
1.25
1.30
0.97
1.0
1.07
1.10
1.17
1.20
3.6
V
DD
+0.3
9
Min(V
DD
,
V
DDA
,
V
DD33USB
,
V
DDMMC
)
+3.6 V <
1.05
1.15
1.25
1.35
1.05
1.15
1.25
Unit
V
DS13196 - Rev 6 page 66/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions f
DFSDM2_Aclk f
DFSDM2_Clk f fdcan_ker_ck f cec_ker_ck f
I2C_ker_ck f lptim_ker_ck f rcc_tim_ker_ck f rcc_tim_ker_ck f rng_clk f sai_a_ker_ck f sai_b_ker_ck f sai_a_ker_ck
Symbol
f
CPU f
ACLK f
HCLK f
PCLK f
TraceCK
/ f
JTCK f ltdc_ker_ck f fmc_ker_ck f octospi_ker_clk f sdmmc_ker_ck f
DFSDM1_Aclk f
DFSDM1_Clk
Symbol
V
CORE
T
A
Parameter
Regulator OFF: external V
CORE
voltage must be supplied from external regulator on VCAP pins
Ambient temperature for the suffix 6 version
Operating conditions Min Typ
VOS0 (max frequency
280 MHz)
1.27
1.30
Maximum power dissipation
Low-power dissipation
VOS0
VOS3, VOS2, VOS1
–40
–40
–40
–40
-
-
-
-
Max
1.33
85
105
Unit
V
°C
T
J
Junction temperature range
105
130
°C
1. When a reset occurs, the functionality is guaranteed down to V
PDRmax
or to the specified V
DDmin
when the PDR is
OFF. The PDR can only be switched OFF though the PDR_ON pin that is not available in all packages (refer to
Table 7. STM32H7B0xB pin/ball definition
)
2. Only for power-up sequence when the SMPS step-down converter is configured to supply the LDO.
3. This formula has to be applied on power supplies related to the I/O structures described by the pin definition table.
4. At startup, the external V
CORE
voltage must remain higher or equal to 1.10 V before disabling the internal regulator (LDO).
5. In low-power dissipation state, T
A
can be extended to this range as long as T
Section 7.7 Thermal characteristics
).
J
does not exceed T
Jmax
(see
Table 21. Maximum allowed clock frequencies
Parameter
CPU
AXI
AHB
APB
Trace / JTAG
LTDC
FMC
OCTOSPI1/2
SDMMC1/2
DFSDM1
DFSDM2
FDCAN
HDMI_CEC
I2C[1:4]
LPTIM[1:3]
TIM[2:7],TIM[12:14]
PWM1,PWM8,TIM[15:17]
RNG
40
140
280
280
280
140
140
VOS0
280
280
280
140
140
140
140
66
140
140
280
280
140
35
112.5
225
225
225
112.5
112.5
VOS1
225
225
225
112.5
112.5
112.5
112.5
66
112.5
112.5
225
225
112.5
SAI1 150 150
40
80
160
160
160
80
80
VOS2
160
160
160
80
66
80
80
80
80
80
160
160
80
80
SAI2 150 150 80
88
88
44
44
20
44
88
VOS3
88
88
88
44
44
44
44
44
44
44
88
88
44
80
80
Unit
MHz page 67/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol
f sai_b_ker_ck f spdifrx_ker_ck f spi_ker_ck f lpuart_ker_ck f usart_ker_ck f uart_ker_ck f adp_clk f ulpi_ck f adc_ker_ck f dac_pclk f rtc_ker_ck
Parameter
SAI2
SPDIFRX1
SPI[1:6]
LPUART1
USART1/2/3/6/10
UART4/5/7/8/9
USBOTG
USB1ULPI
ADC1/2
DAC1/2
RTC
VOS0
150
280
280
140
280
280
48
66
50
140
1
VOS1
150
225
225
112.5
225
225
48
66
50
112.5
1
VOS2
80
160
160
80
160
160
48
66
50
80
1
VOS3
80
88
88
44
88
88
48
66
50
44
1
Unit
MHz
1. Guaranteed by design.
2. The maximum kernel clock frequencies can be limited by the maximum peripheral clock frequency (refer each peripheral electrical characteristics).
Power scale
VOS0
VOS1
VOS2
VOS3
SVOS4
SVOS5
Table 22. Supply voltage and maximum frequency configuration
V
CORE
source
LDO/SMPS
LDO/SMPS
LDO/SMPS
LDO/SMPS
LDO/SMPS
LDO/SMPS
Max T
J
(°C)
105
130
130
130
130
130
Max frequency (MHz)
280
225
160
88
N/A
N/A
Min V
DD
(V)
1.71
1.62
1.62
1.62
1.62
1.62
page 68/199
6.3.2
6.3.3
STM32H7B0xB
Operating conditions
VCAP external capacitor
Stabilization for the embedded LDO regulator is achieved by connecting an external capacitor C
EXT
to the VCAPx pin. C
EXT
is specified in
Table 23. VCAP operating conditions . Two external capacitors must be connected to
VCAP pins (refer to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development (AN5307).
Figure 14. External capacitor C
EXT
C
ESR
R
Leak
1.
Legend: ESR is the equivalent series resistance.
Table 23. VCAP operating conditions
When the internal LDO voltage regulator is switched OFF, the two 2.2 µF VCAP capacitors are not required. However all VCAPx package pins must be connected together and it is recommended to add a ceramic filtering capacitor of 100 nF as close as possible to each VCAPx pin.
Symbol Parameter Conditions
CEXT
ESR
External capacitor for LDO enabled
ESR of external capacitor
2.2 µF
< 100 mΩ
1. This value corresponds to CEXT typical value. A variation of ±20% is tolerated.
2. If the VCAP3 pin is available (depending on the package), it must be connected to the other VCAP pins. No additional capacitor is required.
SMPS step-down converter
The devices embed a high power efficiency SMPS step-down converter requiring external components. Refer to Getting started with STM32H7A3/7B3 and STM32H7B0 hardware development (AN5307) for the required components and tradeoffs.
Table 24. Characteristics of SMPS step-down converter external components
Symbol Parameter
Capacitance of external capacitor on VDDSMPS
C
IN
ESR of external capacitor
C filt
Capacitance of external capacitor on VLXSMPS pin
Capacitance of external capacitor on VFBSMPS pin
C
OUT
L
-
ESR of external capacitor
Inductance of external Inductor on VLXSMPS pin
Serial DC resistor
I
SAT
I
RMS
DC current at which the inductance drops 30% from its value without current.
Average current for a 40 °C rise: rated current for which the temperature of the inductor is raised 40°C by DC current
Conditions
4.7 µF
100 mΩ
220 pF
10 µF
20 mΩ
2.2 µH
150 mΩ
1.7 A
1.4 A
DS13196 - Rev 6 page 69/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Table 25. SMPS step-down converter characteristics for external usage
V
Symbol
DDSMPS
Conditions
V
OUT
= 1.8 V
V
OUT
= 2.5 V
Min
2.3
3
V
OUT
I
OUT
=600 mA
I
OUT internal and external usage
-
T
RDS
ON
IDD
SMPS_Q
SMPS_START
Quiescent current
V
OUT
= 1.8 V
V
OUT
= 2.5 V
1. The switching frequency is 2.4 MHz±10%
2. Including line transient and load transient.
3. These characteristics are given for SMPSEXTHP bit is set in the PWR_CR3 register.
-
-
-
-
2.25
1.62
-
-
Typ
-
-
-
-
2.5
1.8
100
220
270
360
Max
3.6
3.6
2.75
1.98
600
600
120
-
405
540
Unit
The SMPS current consumption can be determined using the following formula based on the maximum LDO current consumption provided in
Section 6.3.7 Supply current characteristics :
I
DDSMPS where
= I
DDLDO
× V
CORE
÷ V
DD
× efficency
I
DDLDO
is the current in LDO configuration given in the following tables
V
CORE
is the digital core supply (V
CAP
)
Efficiency is defined in the following curves.
V
V mA mΩ
µA
µs page 70/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 15. SMPS efficicency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode,
T
J
= 30 °C
Efficiency (%)
100
90
80
70
60
50
40
30
1 10 100
VDDSMPS = 1.8V, VOS0
VDDSMPS = 3.3V, VOS0
VDDSMPS = 1.8V, VOS1
VDDSMPS = 3.3V, VOS1
VDDSMPS = 1.8V, VOS2
VDDSMPS = 3.3V, VOS2
VDDSMPS = 1.8V, VOS3
VDDSMPS = 3.3V, VOS3
1000
Current (mA)
Figure 16. SMPS efficiency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode,
T
J
= 130 °C
Efficiency (%)
100
90
80
70
60
50
40
30
1 10 100
VDDSMPS = 1.8V, VOS0
VDDSMPS = 3.3V, VOS0
VDDSMPS = 1.8V, VOS0
VDDSMPS = 3.3V, VOS0
VDDSMPS = 1.8V, VOS1
VDDSMPS = 3.3V, VOS1
VDDSMPS = 1.8V, VOS2
VDDSMPS = 3.3V, VOS2
VDDSMPS = 1.8V, VOS3
VDDSMPS = 3.3V, VOS3
1000
Current (mA) page 71/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 17. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5),
T
J
= 30 °C
Efficiency (%)
100
40
30
20
10
0
0.01
90
80
70
60
50
0.1
1 10
VDDSMPS = 1.8V, SVOS5
VDDSMPS = 3.3V, SVOS5
VDDSMPS = 1.8V, SVOS4
VDDSMPS = 3.3V, SVOS4
VDDSMPS = 1.8V, SVOS3
VDDSMPS = 3.3V, SVOS3
100
Current (mA)
Figure 18. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5),
T
J
= 130 °C
Efficiency (%)
100
90
60
50
40
30
20
80
70
10
0
0.01
0.1
1 10
VDDSMPS = 1.8V, SVOS5
VDDSMPS = 3.3V, SVOS5
VDDSMPS = 1.8V, SVOS4
VDDSMPS = 3.3V, SVOS4
VDDSMPS = 1.8V, SVOS3
VDDSMPS = 3.3V, SVOS3
100
Current (mA) page 72/199
6.3.4
STM32H7B0xB
Operating conditions
Figure 19. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5),
T
J
= 30 °C
Efficiency (%)
100
40
30
20
10
0
0.01
90
80
70
60
50
0.1
1 10
VDDSMPS = 1.8V, SVOS5 in Stop2 mode
VDDSMPS = 3.3V, SVOS5 in Stop2 mode
VDDSMPS = 1.8V, SVOS4 in Stop2 mode
VDDSMPS = 3.3V, SVOS4 in Stop2 mode
VDDSMPS = 1.8V, SVOS3 in Stop2 mode
VDDSMPS = 3.3V, SVOS3 in Stop2 mode
100
Current (mA)
Figure 20. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5),
T
J
= 130 °C
Efficiency (%)
100
60
50
40
30
20
10
0
0.01
90
80
70
0.1
1 10
VDDSMPS = 1.8V, SVOS5 in Stop2 mode
VDDSMPS = 3.3V, SVOS5 in Stop2 mode
VDDSMPS = 1.8V, SVOS4 in Stop2 mode
VDDSMPS = 3.3V, SVOS4 in Stop2 mode
VDDSMPS = 1.8V, SVOS3 in Stop2 mode
VDDSMPS = 3.3V, SVOS3 in Stop2 mode
100
Current (mA)
Operating conditions at power-up / power-down
Subject to general operating conditions for T
A
.
Operating conditions at power-up / power-down (regulator ON)
DS13196 - Rev 6 page 73/199
6.3.5
STM32H7B0xB
Operating conditions
Symbol t
VDD t
VDDA t
VDDUSB
VDDMMC
Table 26. Operating conditions at power-up / power-down (regulator ON)
V
DD
rise time rate
V
DD
fall time rate
V
DDA
rise time rate
V
DDA
fall time rate
V
DDUSB
rise time rate
V
DDUSB
fall time rate
V
DDMMC
rise time rate
V
DDMMC
fall time rate
Parameter
10
0
10
Min
0
10
0
0
10
∞
∞
∞
Max
∞
∞
∞
∞
∞
Unit
µs/V
Embedded reset and power control block characteristics
The parameters given in Table 27. Reset and power control block characteristics
are derived from tests performed under ambient temperature and V
DD
supply voltage conditions summarized in Table 20. General operating conditions .
Symbol t
RSTTEMPO
V
POR/PDR
V
BOR1
V
BOR2
V
BOR3
V
PVD0
V
PVD1
V
PVD2
V
PVD3
V
PVD4
V
PVD5
V
PVD6
V
POR/PDR
Table 27. Reset and power control block characteristics
Parameter
Reset temporization after POR released
Power-on/power-down reset threshold
Brown-out reset threshold 1
Brown-out reset threshold 2
Brown-out reset threshold 3
Programmable Voltage Detector threshold 0
Programmable Voltage Detector threshold 1
Programmable Voltage Detector threshold 2
Programmable Voltage Detector threshold 3
Programmable Voltage Detector threshold 4
Programmable Voltage Detector threshold 5
Programmable Voltage Detector threshold 6
Hysteresis for power-on/power-down reset
Conditions
-
Min
-
Typ
377
Max
550
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
1.62 1.67
1.71
1.58 1.62
1.68
2.04 2.10
2.15
1.95 2.00
2.06
2.34 2.41
2.47
2.25 2.31
2.37
2.63 2.70
2.78
2.54 2.61
2.68
1.90 1.96
2.01
1.81 1.86
1.91
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
2.05 2.10
2.16
1.96 2.01
2.06
2.19 2.26
2.32
2.10 2.15
2.21
2.35 2.41
2.47
Falling edge
Rising edge
Falling edge
2.25 2.31
2.37
2.49 2.56
2.62
2.39 2.45
2.51
Rising edge
Falling edge
2.64 2.71
2.78
2.55 2.61
2.68
Rising edge 2.78 2.86
2.94
Falling edge in Run mode 2.69 2.76
2.83
Hysteresis in Run mode 43 -
Unit
µs
V mV
DS13196 - Rev 6 page 74/199
6.3.6
STM32H7B0xB
Operating conditions
Symbol
V hyst_BOR_PVD
I
DD_BOR_PVD
I
DD_POR_PDR
V
AVM_0
V
AVM_1
V
AVM_2
Parameter
Hysteresis voltage of BOR
BOR and PVD consumption from V
DD
POR and PDR consumption from V
DD
Analog voltage detector for VDDA threshold 0
Analog voltage detector for VDDA threshold 1
Analog voltage detector for VDDA threshold 2
V
AVM_3
Analog voltage detector for VDDA threshold 3
V hyst_VDDA
I
DD_PVM
I
DD_VDDA
Hysteresis of VDDA voltage detector
PVM consumption from VDD
Voltage detector consumption on VDDA
1. Guaranteed by design.
Conditions
Hysteresis in Run mode
-
-
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
-
-
Resistor bridge
Min Typ Max Unit
100 mV
0.630
0.8
1.2
1.66 1.71
1.76
1.56 1.61
1.66
2.06 2.12
2.19
1.96 2.02
2.08
2.42 2.50
2.58
2.35 2.42
2.49
2.74 2.83
2.91
2.64 2.72
2.80
-
100
-
µA
V
mV
0.25
µA
2.5
µA
Embedded reference voltage
The parameters given in Table 28
are derived from tests performed under ambient temperature and V
DD
voltage conditions summarized in Table 20. General operating conditions
.
supply
Table 28. Embedded reference voltage
Symbol
V
REFINT
Parameter
Internal reference voltages
Conditions
−40 °C < T
J
< 130 °C t t
S_vrefint
t
S_vbat
start_vrefint
ADC sampling time when reading the internal reference voltage
V
BAT
sampling time when reading the internal
V
BAT
reference voltage
Start time of reference voltage buffer when
ADC is enable
Reference Buffer consumption for ADC
-
-
-
V
DD
= 3.3 V
ΔVREFINT
Internal reference voltage spread over the temperature range
−40 °C < T
J
< 130 °C
T coeff
V
DDcoeff
V
REFINT_DIV1
V
REFINT_DIV2
V
REFINT_DIV3
Average temperature coefficient
Average Voltage coefficient
1/4 reference voltage
1/2 reference voltage
3/4 reference voltage
Average temperature coefficient
3.0 V < V
-
-
-
DD
< 3.6 V
1. Guaranteed by design and tested in production at 3.3 V
2. The shortest sampling time for the application can be determined by multiple iterations.
3. Guaranteed by design.
Min Typ Max
1.180 1.216 1.255
4.3
9
-
-
-
-
-
9
-
-
-
-
-
5
20
-
-
4.4
13.5
23
15
70
Unit
V
µs
µs
µA mV ppm/°C
10 1370 ppm/V
25 -
50 % V
REFINT
75 -
DS13196 - Rev 6 page 75/199
6.3.7
STM32H7B0xB
Operating conditions
Symbol
V
REFIN_CAL
Table 29. Internal reference voltage calibration values
Parameter
Raw data acquired at temperature of 30 °C,
VDDA
= 3.3 V
Memory address
08FFF810 - 08FFF812
Symbol
V
DD50USB
I
DD50USB
V
REGOUTV33V
I
OUT
T
WKUP
Table 30. USB regulator characteristics
Parameter
Supply voltage
Current consumption
Regulated output voltage
Output current load sinked by USB block
Wakeup time
Conditions
-
-
-
-
-
3
-
-
Min Typ
4 5
13.5
-
-
120
Max Unit
5,5 V
µA
3.6
20
170
V mA
µs
Supply current characteristics
The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code.
The current consumption is measured as described in
Figure 13. Current consumption measurement scheme .
All the run-mode current consumption measurements given in this section are performed with a CoreMark code.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•
•
•
All I/O pins are in analog input mode.
All peripherals are disabled except when explicitly mentioned.
•
The Flash memory access time is adjusted with the minimum wait states number, depending on the f
ACLK frequency (refer to the table “Number of wait states according to CPU clock (f rcc_cpu_ck
) frequency and
V
CORE
range” available in the reference manual).
When the peripherals are enabled, the AHB clock frequency is the CPU frequency divided by 2 and the APB clock frequency is AHB clock frequency divided by 2.
The parameters given in the below tables are derived from tests performed under ambient temperature and supply voltage conditions summarized in
Table 20. General operating conditions
.
The maximum current consumptions provided in the following tables are given for LDO regulator ON. To obtain the maximum SMPS current consumption, the efficiency curves can be used with the maximum LDO current consumption as entry value (refer to
Section 6.3.3 SMPS step-down converter
).
DS13196 - Rev 6 page 76/199
STM32H7B0xB
Operating conditions
Table 31. Inrush current and inrush electric charge characteristics for LDO and SMPS
1.
The typical values are given for V
DDLDO
= V
DDSMPS
= 3.3 V and for typical decoupling capacitor values of C
EXT
and C
OUT
.
2.
The product consumption on V
DDCORE
is not taken into account in the inrush current and inrush electric charge.
Symbol Parameter Conditions Min Typ Max Unit
I
RUSH
Q
RUSH
Inrush current on voltage regulator power-on
(POR or wakeup from Standby)
Inrush current on voltage regulator power-on
(POR)
Inrush current on voltage regulator power-on
(wakeup from Standby)
Inrush current on voltage regulator power-on
(POR or wakeup from Standby)
Inrush current on voltage regulator power-on
(POR)
Inrush current on voltage regulator power-on
(wakeup from Standby) on V
DDLDO
on V
DDSMPS
SMPS supplies the V
DDCORE
SMPS supplies internal LDO V
OUT
=
SMPS supplies internal LDO V
OUT
=
on V
DDSMPS
SMPS supplies external circuit V
OUT
= 1.8 V
SMPS supplies external circuit V
OUT
= 2.5 V
on V
DDSMPS
SMPS supplies internal LDO V
OUT
=
1.8 V
SMPS supplies internal LDO V
OUT
=
2.5 V on V
DDLDO
on V
DDSMPS
SMPS supplies the V
DDCORE
SMPS supplies internal LDO V
OUT
=
on V
DDSMPS
SMPS supplies internal LDO V
OUT
=
SMPS supplies external circuit VOUT
= 1.8 V
SMPS supplies external circuit V
OUT
= 2.5 V
on V
DDSMPS
SMPS supplies internal LDO V
OUT
=
1.8 V
SMPS supplies internal LDO V
OUT
=
2.5 V
-
-
-
-
-
-
-
-
55
25
45
25
4.0
2.9
135
100
70 200
95 210
4.4
2.9
8.0
-
mA
μC
1. The inrush current and inrush electric charge on V
DDLDO
are not present in Bypass mode or when the
SMPS supplies V
DDCORE
.
2. The maximum value is given for the maximum decoupling capacitor C
EXT
.
3. The inrush current and inrush electric charge on V
DDSMPS
C
OUT
) is not present, that is if the SMPS is not used.
is not present if the external component (L or
4. The maximum value is given for the maximum decoupling capacitor C
OUT
and the minimum V
DDSMPS voltage.
5. The inrush current and inrush electric charge due to the transition from 1.2 V to the final V
OUT or 2.5 V) is not taken into account.
value (1.8 V
DS13196 - Rev 6 page 77/199
STM32H7B0xB
Operating conditions
Table 32. Typical and maximum current consumption in Run mode, code with data processing running from ITCM, regulator ON
Data are in DTCM for best computation performance. In this case, the cache has no influence on consumption.
Max
Symbol Parameter Conditions f rcc_cpu_ck
(MHz)
Typ
LDO
Typ
SMPS
T
J
=
25 °C
T
J
=
85 °C
T
J
=
105 °C
T
J
=
130 °C unit
I
DD
Supply current in
Run mode
All peripherals disabled
All peripherals enabled
VOS0
VOS1
VOS2
VOS3
VOS0
VOS1
VOS2
VOS3
87
63
55
146
129
100
41
35
29
23
173
70
67
65
56
52
106
92
80
75
69
45
41
115
105
77
23
21
16
9
142
47
45
43
38
35
77
64
58
52
51.5
45.0
32.5
27.5
17.5
15.0
8.5
7.5
5.5
3.0
63.5
19.0
18.0
17.0
14.5
13.0
34.0
27.5
24.0
21.0
108.0
99.0
71.5
65.0
41.5
38.0
19.0
18.0
12.5
6.0
133.5
42
39
37.5
34.0
30.5
69.5
56.5
52.0
46.5
225
225
160
160
88
88
88
88
60
25
280
180
168
160
160
144
280
225
225
200 mA
168
147
118
102
77
66
55
46
41
34
196
88
85
83
70
67
128
114
98
93
214
185
156
132
108
91
85
71
66
59
242
125
122
120
101
97
173
159
136
130
1. Guaranteed by characterization results, unless otherwise specified.
2. The maximum values are given for LDO regulator ON. Refer to
Section 6.3.3 SMPS step-down converter
for the SMPS maximum current consumption.
DS13196 - Rev 6 page 78/199
STM32H7B0xB
Operating conditions
Table 33. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory, cache ON
Symbol
I
DD
Parameter
Supply current in
Run mode
Conditions
All peripherals disabled
All peripherals enabled
VOS0
VOS1
VOS2
VOS3
VOS0
VOS1
VOS2 f rcc_cpu_ck
(MHz)
25
280
225
225
160
160
88
88
160
144
88
88
60
280
225
225
200
180
168
160
Typ
LDO
6.0
132.5
107.5
99.0
71.5
65.0
41.5
38.0
34.0
30.5
19.0
17.5
12.5
69.0
56.0
51.5
46.5
42.0
39.0
37.5
Typ
2.5
63.5
51.0
44.5
32.5
27.5
17.5
15.0
14.5
13.0
8.5
7.5
5.0
33.5
27.0
23.5
21.5
19.0
18.0
17.0
VOS3
1. Guaranteed by characterization results, unless otherwise specified.
2. The maximum values are given for LDO regulator ON. Refer to
Section 6.3.3 SMPS step-down converter
for the SMPS maximum current consumption.
9
142
115
105
77
69
45
41
38
35
23
21
16
58
52
47
45
43
T
J
=
25 °C
77
64
23
173
145
129
100
87
63
55
56
53
41
35
29
80
75
70
67
65
T
J
=
85 °C
106
92
34
195
168
147
118
102
77
66
70
67
55
46
41
T
J
=
105 °C
128
114
98
92
88
85
83
59
241
213
185
155
101
97
85
71
66
132
108
91
T
J
=
130 °C
173
158
136
129
125
122
120 unit mA
Table 34. Typical and maximum current consumption in Run mode, code with data processing running from Flash memory, cache OFF
Symbol
I
DD
Parameter
Supply current in
Run mode
Conditions
All peripherals disabled
All peripherals enabled
VOS0
VOS1
VOS2
VOS3
VOS0
VOS1 f rcc_cpu_ck
(MHz)
88
88
280
225
225
280
225
225
160
160
Typ
LDO
18.5
16.5
119.5
98.5
90.5
56.0
47.0
43.0
34.0
29.5
Typ
9.0
7.5
58.0
48.0
42.0
28.0
23.5
21.0
16.5
13.5
T
J
=
25 °C
23
19
127
105
96
63
54
49
39
34.
T
J
=
85 °C
Max
T
J
=
105 °C
40
33
157
135
120
91
82
71
62
51
54
44
180
157
138
113
103
89
79
65
Unit mA
T
J
=
130 °C
84
69
225
203
176
157
148
126
116
96
DS13196 - Rev 6 page 79/199
STM32H7B0xB
Operating conditions
Symbol
I
DD
Parameter
Supply current in
Run mode
Conditions
All peripherals enabled
VOS1
VOS2 f rcc_cpu_ck
(MHz)
160
160
88
88
Typ
LDO
68.0
60.5
41.0
36.5
Typ
32.0
26.5
18.0
15.0
VOS3
1. Guaranteed by characterization results, unless otherwise specified.
2. The maximum values are given for LDO regulator ON. Refer to
Section 6.3.3 SMPS step-down converter
for the SMPS maximum current consumption.
T
J
=
25 °C
73
64
45
39
T
J
=
85 °C
96
82
62
53
Max
T
J
=
105 °C
114
97
77
64
T
J
=
130 °C
152
127
107
89
Unit mA
Table 35. Typical consumption in Run mode and corresponding performance versus code position
Symbol
I
DD
Parameter
Supply current in Run mode
Conditions
Peripheral
All peripherals disabled, cache ON
All peripherals disabled cache
OFF
Code
ITCM
FLASH
AXI
SRAM
AHB
SRAM
SRD
SRAM
ITCM
FLASH
AXI
SRAM
AHB
SRAM
SRD
SRAM f rcc_cpu_c k
(MHz)
Coremark
Typ
LDO
280
280
280
280
280
280
280
280
280
280
1414
1414
1414
1414
1414
1414
668
668
295
295
69.5
69.0
69.5
70.0
70.0
69.5
56.0
62.5
59.5
59.0
Typ
SMPS
33.8
33.4
33.6
33.7
33.7
33.8
28.0
30.2
28.8
28.5
Unit mA
LDO I
DD
/
Coremark
49.2
48.8
49.2
49.5
49.5
49.2
83.8
93.6
201.7
200.0
SMPS I
DD
Coremark
/
23.9
23.6
23.8
23.8
23.8
23.9
41.9
45.2
97.6
96.6
Unit
µA/
Coremark
Table 36. Typical current consumption in Autonomous mode
Symbol
I
DD
Parameter
Supply current in Autonomous mode
Conditions
Run, DStop mode
Run, DStop2 mode
VOS3
VOS3 f rcc_hclk4
1. System in Run mode, CPU domain is DStop or DStop2 mode with memories of the CPU domain shut-off enable or disable.
(AHB4) (MHz)
64
64
Typ Unit
2.98
2.64
mA
DS13196 - Rev 6 page 80/199
STM32H7B0xB
Operating conditions
Table 37. Typical current consumption in Sleep mode, regulator ON
I
Symbol
DD(Sleep)
Parameter
Supply current in
Sleep mode
Conditions
All peripherals disabled
VOS0
VOS1
VOS2 f rcc_cpu_ck
(MHz)
280
225
225
160
160
88
88
Typ
LDO
18.1
15.0
13.7
10.3
9.3
5.8
5.2
Typ
SMPS
13.0
10.6
9.3
6.8
5.8
3.6
3.0
VOS3
1. Guaranteed by characterization results.
2. The maximum values are given for LDO regulator ON. Refer to
Section 6.3.3 SMPS step-down converter
for the SMPS maximum current consumption.
T
J
=
25 °C
23
20
18
14
12
9
8
T
J
=
85 °C
Max
T
J
=
105 °C
51
47
40
36
72
68
57
53
30
26
21
44
40
32
T
J
=
130 °C
115
112
93
90
74
70
57
Unit mA
Symbol Parameter
Table 38. Typical current consumption in System Stop mode
Conditions
Typ
LDO
Typ
SMPS
T
J
=
25 °C
T
J
=
85 °C
T
J
=
105 °C
I
DD(Stop)
Stop, DStop
Stop, DStop2
Flash memory in low- power mode, memory shut-off disable
Flash memory in normal mode, memory shut-off disable
Flash memory in low- power mode, memory shut-off enable
Flash memory in normal mode, memory shut-off enable
Flash memory in low- power mode, memory shut-off disable
SVOS3
Main
SVOS5
SVOS3
Main
0.540
SVOS3 LP 0.495
SVOS4 0.370
0.245
0.560
SVOS3 LP 0.515
SVOS4
SVOS5
SVOS3
Main
0.390
0.245
0.530
SVOS3 LP 0.480
SVOS4 0.360
0.230
SVOS5
SVOS3
Main
0.550
SVOS3 LP 0.500
SVOS4 0.380
0.230
SVOS5
SVOS3
Main
0.161
SVOS3 LP 0.115
SVOS4 0.095
SVOS5 0.090
0.487
0.193
0.137
0.090
0.504
0.209
0.153
0.090
0.481
0.186
0.134
0.085
0.498
0.204
0.151
0.085
0.343
0.046
0.037
0.032
2.33
2.27
1.59
0.98
2.39
2.33
1.65
1.04
2.31
2.25
1.57
0.96
2.37
2.31
1.63
1.02
0.32
0.28
0.20
0.14
14.36
14.21
10.58
7.18
14.62
14.47
10.84
7.43
14.23
14.09
10.49
6.95
14.50
14.35
10.75
7.21
1.67
1.62
1.23
0.93
24.52
24.28
18.52
13.10
24.93
24.69
18.93
13.51
24.27
24.04
18.32
12.59
24.68
24.45
18.73
13.00
2.86
2.80
2.19
1.75
T
J
=
130 °C
Unit
46.29
45.94
35.90
26.61
47.01
46.65
36.62
27.32
45.71
45.36
35.41
25.26
46.43
46.07
36.13
25.97
5.58
5.50
4.43
3.80
mA
DS13196 - Rev 6 page 81/199
STM32H7B0xB
Operating conditions
Symbol Parameter Conditions
Typ
LDO
Typ
SMPS
T
J
=
25 °C
T
J
=
85 °C
T
J
=
105 °C
I
DD(Stop)
Stop, DStop2
Flash memory in low -power mode, memory shut-off enable
SVOS3
Main
0.146
SVOS3 LP 0.100
SVOS4 0.085
SVOS5 0.075
0.337
0.040
0.033
0.028
0.30
0.26
0.19
0.12
1. Guaranteed by characterization results.
2. The maximum values are given for LDO regulator ON. Refer to
Section 6.3.3 SMPS step-down converter
for the SMPS maximum current consumption.
3. When the SMPS is ON, an additional consumption is observed. It is recommended to use LP SVOS3 to optimize power consumption.
1.55
1.51
1.15
0.80
2.63
2.58
2.01
1.46
T
J
=
130 °C
Unit
5.04
4.96
3.98
3.02
mA
Symbol Parameter
Table 39. Typical current consumption RAM shutoff in Stop mode
Conditions
Typ LDO
SVOS3 LP SVOS4 SVOS5
Unit
∆
IDD
(Stop) Stop, Dstop or Dstop2
AXISRAM1 shutoff power consumption (power consumption reduction when AXISRAM1 shutoff is enabled)
AXISRAM2 shutoff power consumption (power consumption reduction when AXISRAM2 shutoff is enabled)
AXISRAM13 shutoff power consumption (power consumption reduction when AXISRAM3 shutoff is enabled)
AHBSRAM1 shutoff power consumption (power consumption reduction when AHBSRAM1 shutoff is enabled)
AHBSRAM2 shutoff power consumption (power consumption reduction when AHBSRAM2 shutoff is enabled)
ITCM and ETM shutoff power consumption (power consumption reduction when ITCM and ETM shutoff is enabled)
GFXMMU and JPEG shutoff power consumption (power consumption reduction when GFXMMU and JPEG shutoff is enabled)
High-speed interface USB and FDCAN shutoff power consumption
(power consumption reduction when High-speed interface USB and
FDCAN shutoff is enabled)
SRDSRAM shutoff power consumption (power consumption reduction when SRDSRAM shutoff is enabled)
3.00
4.40
4.40
0.90
0.90
1.00
0.20
0.20
0.30
1.80
2.70
2.70
0.50
0.50
0.60
0.10
0.10
0.30
3.00
4.40
4.40
0.70
0.70
0.90
0.10
0.10
0.40
µA
Table 40. Typical and maximum current consumption in Standby mode
Symbol
I
DD
(Standby)
Parameter
Supply current in
Standby mode,
IWDG OFF
Conditions
Backup
SRAM
OFF
ON
OFF
ON
RTC &
OFF
OFF
ON
ON
1. Guaranteed by characterization results.
2. The LSE clock is in low-drive mode.
Typ
1.62
V
2.4
3 V
3.3
T
J
=
25 °C
1.97
2.76
3.02
3.30
4.0
2.78
3.69
4.02
4.40
5.4
2.46
3.37
3.73
4.07
5.0
3.27
4.30
4.73
5.17
6.4
T
J
=
85 °C
T
J
=
105 °C
T
J
=
130 °C
Unit
11.0
13.0
12.2
14.2
22.0
25.0
23.3
26.3
57.0
64.0
59.0
66.0
µA
DS13196 - Rev 6 page 82/199
STM32H7B0xB
Operating conditions
3. These values are given for PDR ON. When the PDR is OFF (internal reset OFF), the typical current consumption is reduced
(refer to Section 6.3.5 Embedded reset and power control block characteristics ).
Table 41. Typical and maximum current consumption in V
BAT
mode
Typ
I
Symbol
DD
(VBAT)
Parameter
Supply current in
V
BAT
mode
Conditions
Backup
SRAM
OFF
ON
OFF
ON
RTC &
OFF
OFF
ON
ON
1. Guaranteed by characterization results.
2. The LSE clock is in low-drive mode.
1.2 V 2 V 3 V 3.3 V
0.01 0.02 0.03 0.07
0.85 0.93 1.05 1.14
0.50 0.63 0.74 0.84
1.34 1.54 1.76 1.91
T
J
=
25 °C
0.2
1.5
1.2
2.5
T
J
=
85 °C
T
J
=
105 °C
1.9
3.6
3.1
4.8
4.6
7.5
5.9
8.8
Caution:
T
J
=
130 °C
14
20.0
16
22.0
Unit
µA
I/O system current consumption
I/O static current consumption
All the I/Os used as inputs with pull-up generate a current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in
Table 63. I/O static characteristics .
For the output pins, any external pull-down or external load must also be considered to estimate the current consumption.
An additional I/O current consumption is due to I/Os configured as inputs if an intermediate voltage level is externally applied. This current consumption is caused by the input Schmitt trigger circuits used to discriminate the input value. Unless this specific configuration is required by the application, this supply current consumption can be avoided by configuring these I/Os in analog mode. This is notably the case of ADC input pins which should be configured as analog inputs.
Any floating input pin can also settle to an intermediate voltage level or switch inadvertently, as a result of external electromagnetic noise. To avoid a current consumption related to floating pins, they must either be configured in analog mode, or forced internally to a definite digital value. This can be done either by using pull-up/down resistors or by configuring the pins in output mode.
I/O dynamic current consumption
it uses the current from the MCU supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load (internal or external) connected to the pin:
I
SW
=V
DDx
× f sw
× C
L where
I
SW
is the current sunk by a switching I/O to charge/discharge the capacitive load
V
DDx
is the MCU supply voltage f
SW
is the I/O switching frequency
C
L
is the total capacitance seen by the I/O pin: C = C
INT
+ C
EXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed frequency.
On-chip peripheral current consumption
The MCU is placed under the following conditions:
•
•
At startup, all I/O pins are in analog input configuration.
All peripherals are disabled unless otherwise mentioned.
•
•
The I/O compensation cell is enabled.
f rcc_cpu_ck
is the CPU clock. f
PCLK
= f rcc_cpu_ck
/4, and f
HCLK
= f rcc_cpu_ck
/2.
The given value is calculated by measuring the difference of current consumption
DS13196 - Rev 6 page 83/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
•
•
•
• with all peripherals clocked off with only one peripheral clocked on f rcc_cpu_ck
= 280 MHz (Scale 0), f
= 88 MHz (Scale 3) rcc_cpu_ck
= 225 MHz (Scale 1), f rcc_cpu_ck
= 160 MHz (Scale 2), f rcc_cpu_ck
The ambient operating temperature is 25 °C and V
DD
=3.3 V.
AHB3
AHB1
AHB2
Table 42. Peripheral current consumption in Run mode
Peripheral
0.90
0.80
0.60
4.90
1.00
5.00
5.10
1.10
0.80
1.10
5.00
0.10
22.00
9.30
0.10
0.10
1.40
1.60
9.30
0.60
2.20
8.30
2.00
0.70
1.80
0.30
1.20
1.30
2.70
VOS1
6.40
I
DD
(Typ)
VOS2
5.90
2.80
4.40
19.00
1.30
2.50
4.00
17.00
1.20
8.40
0.50
2.00
7.60
1.80
0.70
1.60
0.30
1.10
1.20
2.40
0.80
0.80
0.50
4.50
0.90
4.60
4.60
1.00
0.70
1.00
4.60
0.10
20.00
9.10
0.10
0.10
1.30
1.50
0.90
0.90
0.60
5.40
1.10
5.30
5.40
1.10
0.70
1.10
5.30
0.10
24.00
9.50
0.10
0.10
1.50
1.80
10.00
0.50
2.30
8.90
2.20
VOS0
7.10
3.00
4.70
20.00
1.30
0.70
2.00
0.30
1.20
1.40
2.80
AXISRAM2
AXISRAM3
DTCM1
DTCM2
ITCM
AXISRAM1
Bridge
DMA1
DMA2
CRC
ADC12 registers
ADC12 kernel
USB1OTG registers
USB1OTG kernel
USB1ULPI
Bridge
CRYPT
HASH
MDMA
DMA2D
JPGDEC
FLITF
FMC registers
FMC kernel
OSPI1 registers
OSPI1 kernel
SDMMC1 registers
SDMMC1 kernel
OSPI2 registers
OSPI2 kernel
IOMNGR
OTFDEC1
OTFDEC2
GFXMMU
0.70
0.70
0.50
4.10
0.80
4.20
4.30
1.00
0.70
1.00
4.20
0.10
18.00
8.80
0.10
0.10
1.20
1.30
7.70
0.50
1.80
6.90
1.60
VOS3
5.40
2.30
3.60
15.00
1.10
0.60
1.50
0.30
1.10
1.20
2.30
Unit
µA/MHz page 84/199
DS13196 - Rev 6
AHB2
AHB4
APB3
APB1
Peripheral
GPIOK
BDMA2
SRDSRAM
BKPRAM
IWDG
Bridge
LTDC
WWDG1
Bridge
TIM2
TIM3
TIM4
TIM5
TIM6
TIM7
TIM12
TIM13
TIM14
LPTIM1 registers
LPTIM1 kernel
DCMI
HSEM
RNG registers
RNG kernel
SDMMC2 registers
SDMMC2 kernel
BDMA1
AHBSRAM1
AHBSRAM2
Bridge
GPIOA
GPIOB
GPIOC
GPIOD
GPIOE
GPIOF
GPIOG
GPIOH
GPIOI
GPIOJ
STM32H7B0xB
Operating conditions
1.70
1.80
1.80
1.80
1.80
1.80
1.80
1.80
1.80
1.60
0.70
0.60
8.40
1.80
VOS1
4.60
I
DD
(Typ)
VOS2
4.20
0.10
1.40
9.70
6.30
2.10
0.10
1.20
9.50
5.70
1.90
1.50
1.70
1.70
1.60
1.60
1.70
1.60
1.60
1.60
1.50
0.60
0.60
7.70
1.70
6.70
1.50
1.40
3.30
2.60
2.30
0.80
2.00
1.00
0.10
6.90
5.90
5.40
1.80
3.90
0.50
0.70
0.07
0.10
11.00
6.10
1.30
1.30
3.00
2.40
2.10
0.70
1.80
0.90
0.10
6.30
5.40
4.90
1.70
3.50
0.50
0.70
0.07
0.10
9.80
7.20
1.60
1.60
3.60
2.80
2.50
0.80
2.20
1.10
0.10
7.50
6.30
5.80
2.00
4.20
0.60
0.80
0.07
0.10
12.00
1.70
0.70
0.70
9.10
2.00
VOS0
5.00
0.10
1.50
10.00
6.80
2.30
1.80
2.00
2.00
1.90
1.90
2.00
1.90
1.90
1.90
5.60
1.20
1.20
2.80
2.10
1.90
0.60
1.70
0.90
0.10
6.20
4.90
4.50
1.50
3.20
0.50
0.60
0.07
0.10
8.90
1.30
0.60
0.50
7.00
1.50
VOS3
3.90
0.10
1.10
9.20
5.20
1.70
1.40
1.50
1.50
1.50
1.50
1.50
1.50
1.50
1.50
Unit
µA/MHz page 85/199
DS13196 - Rev 6
APB1
APB2
Peripheral
HDMICEC registers
HDMICEC kernel
DAC1
UART7 registers
UART7 kernel
UART8 registers
UART8 kernel
Bridge
CRS
SWP registers
SWP kernel
OPAMP
MDIO
FDCAN registers
FDCAN kernel
Bridge
TIM1
TIM8
USART1 registers
USART1 kernel
SPI2 registers
SPI2 kernel
SPI3 registers
SPI3 kernel
SPDIFRX1 registers
SPDIFRX1 kernel
USART2 registers
USART2 kernel
USART3 registers
USART3 kernel
UART4 registers
UART4 kernel
UART5 registers
UART5 kernel
I2C1 registers
I2C1 kernel
I2C2 registers
I2C2 kernel
I2C3 registers
I2C3 kernel
STM32H7B0xB
Operating conditions
3.40
1.70
3.50
0.80
2.00
0.80
1.90
0.80
2.00
1.80
4.30
1.80
4.20
1.60
VOS1
2.00
I
DD
(Typ)
VOS2
1.80
0.80
2.40
0.80
0.50
2.70
0.80
2.30
0.70
0.50
2.50
3.10
1.50
3.20
0.80
1.80
0.70
1.80
0.70
1.80
1.70
3.90
1.70
3.80
1.50
2.90
16.00
4.80
0.10
9.10
8.80
0.10
0.10
0.30
0.40
2.10
0.10
3.80
0.50
0.10
1.30
1.70
3.50
2.00
3.50
2.60
15.00
3.50
0.10
8.30
8.00
0.10
0.10
0.20
0.40
2.00
0.10
3.50
0.40
0.10
1.20
1.50
3.20
1.80
3.20
3.10
17.00
5.60
0.10
9.80
9.50
0.10
0.10
0.30
0.50
2.30
0.10
4.20
0.50
0.10
1.40
1.80
3.80
2.10
3.80
2.00
4.60
2.00
4.50
1.70
VOS0
2.20
0.90
2.70
0.90
0.60
2.90
3.70
1.80
3.80
0.90
2.10
0.90
2.10
0.90
2.20
2.40
14.00
1.10
0.10
7.60
7.30
0.10
0.10
0.10
0.40
1.80
0.10
3.20
0.40
0.10
1.10
1.40
2.90
1.70
2.90
1.50
3.60
1.50
3.40
1.30
VOS3
1.70
0.70
2.00
0.70
0.40
2.20
2.80
1.40
2.90
0.70
1.70
0.70
1.60
0.70
1.70
Unit
µA/MHz page 86/199
DS13196 - Rev 6
APB2
APB4
Peripheral
DFSDM1 kernel
Bridge
SYSCFG
LPUART1 registers
LPUART1 kernel
SPI6 registers
SPI6 kernel
I2C4 registers
I2C4 kernel
LPTIM2 registers
LPTIM2 kernel
LPTIM3 registers
LPTIM3 kernel
DAC2
COMP12
VREF
RTCAPB
TMPSENS
DFSDM2 registers
DFSDM2 kernel
USART6 registers
USART6 kernel
USART10 registers
USART10 kernel
UART9 registers
UART9 kernel
SPI1 registers
SPI1 kernel
SPI4 registers
SPI4 kernel
TIM15
TIM16
TIM17
SPI5 registers
SPI5 kernel
SAI1 registers
SAI1 kernel
SAI2 registers
SAI2 kernel
DFSDM1 registers
STM32H7B0xB
Operating conditions
3.90
4.00
1.90
0.50
1.60
1.30
2.10
1.10
9.60
1.90
0.80
1.90
0.50
4.90
VOS1
4.00
I
DD
(Typ)
VOS2
4.50
0.10
4.10
0.10
3.60
0.10
0.10
4.60
0.10
4.00
0.10
3.50
3.60
1.70
0.40
1.50
1.20
1.90
1.00
8.80
1.80
0.70
1.70
0.40
4.40
1.40
0.70
0.30
0.30
1.70
2.10
1.50
0.10
0.70
1.70
0.60
1.70
0.50
0.10
0.40
0.30
1.00
2.10
1.50
0.50
1.30
0.60
0.30
0.20
1.60
2.00
1.40
0.10
0.60
1.60
0.50
1.60
0.50
0.10
0.40
0.30
0.90
1.90
1.40
0.50
1.50
0.80
0.40
0.30
1.90
2.30
1.70
0.10
0.80
1.90
0.60
1.90
0.60
0.10
0.50
0.40
1.10
2.30
1.70
0.60
2.10
0.90
2.10
0.50
5.30
VOS0
3.80
0.10
4.00
0.10
3.50
0.10
4.20
4.30
2.00
0.50
1.80
1.40
2.30
1.20
10.00
1.20
0.50
0.30
0.20
1.40
1.80
1.30
0.10
0.60
1.40
0.50
1.40
0.40
0.10
0.30
0.30
0.80
1.70
1.30
0.40
1.60
0.70
1.50
0.40
4.00
VOS3
6.30
0.10
6.40
0.10
5.50
0.10
3.20
3.30
1.50
0.40
1.30
1.00
1.70
0.90
8.00
Unit
µA/MHz page 87/199
STM32H7B0xB
Operating conditions
APB4
Peripheral
Bridge
VOS0
0.10
VOS1
0.10
I
DD
(Typ)
VOS2
0.10
VOS3
0.10
Unit
µA/MHz
6.3.8
Symbol
I
DD
Table 43. Peripheral current consumption in Stop, Standby and V
BAT
mode
Parameter
RTC+LSE low drive
RTC+LSE medium- low drive
RTC+LSE medium- high drive
RTC+LSE High drive
Backup SRAM
Conditions
-
-
-
-
-
Typ Max (3.6 V)
3.3 V T
J
= 25 °C T
J
= 85 °C T
J
= 105 °C T
J
= 130 °C
0.77
0.87
1.0
1.1
1.2
1.3
1.3
1.4
2.0
2.1
1.03
1.38
1.10
1.3
1.6
1.4
1.5
1.8
2.0
1.6
1.9
3.2
2.3
2.6
7.0
Unit
µA
Wakeup time from low-power modes
The wakeup times given in Table 44. Low-power mode wakeup timings
are measured starting from the wakeup event trigger up to the first instruction executed by the CPU:
•
•
For Stop or Sleep modes: the wakeup event is WFE.
WKUP (PC1) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and V
DD
=3.3 V.
Symbol t
WUSLEEP
t
WUDSTOP
t
WUDSTOP2
Parameter
Wakeup from Sleep
Table 44. Low-power mode wakeup timings
Conditions
Wakeup from DStop
Wakeup from DStop2, clock kept running
Typ
Max
5.00
SVOS3 Main, HSI, Flash memory in normal mode 4.2
SVOS3 Main, HSI, Flash memory in low-power mode 8.3
SVOS3 LP, HSI, Flash memory in normal mode 5.0
SVOS3 LP, HSI, Flash memory in low-power mode
SVOS4, HSI, Flash memory in normal mode
9.0
15.7
SVOS4, HSI, Flash memory in low-power mode
SVOS5, HSI, Flash memory in normal mode
SVOS5, HSI, Flash memory in low-power mode
19.7
35.0
35.0
SVOS3 Main, CSI, Flash memory in normal mode 42.5
SVOS3 Main, CSI, Flash memory in low power mode 48.0
SVOS3 LP, CSI, Flash memory in normal mode 43.3
SVOS3 LP, CSI, Flash memory in low power mode 48.8
SVOS4, CSI, Flash memory in normal mode 54.0
SVOS4, CSI, Flash memory in low-power mode
SVOS5, CSI, Flash memory in normal mode
59.5
74.8
SVOS5, CSI, Flash memory in low-power mode
SVOS3 LP, HSI, Flash memory in low-power mode
SVOS4, HSI, Flash memory in low-power mode
SVOS5, HSI, Flash memory in low-power mode
74.8
9.7
20.4
35.7
5.00
53
59
65
72
90
90
13
26
44
25
43
43
52
58
6
11
7
12
19
Unit
CPU clock cycles
µs
DS13196 - Rev 6 page 88/199
STM32H7B0xB
Operating conditions t
Symbol
WUDSTOP2
Parameter
Wakeup from DStop2, clock kept running
Conditions
SVOS3 LP, CSI, Flash memory in low-power mode
SVOS4, CSI, Flash memory in low-power mode
SVOS5, CSI, Flash memory in low-power mode
Typ
51.3
62.0
77.3
t
WUSTDBY
Wakeup from Standby mode -
1. Guaranteed by characterization results.
2. Measures done at −40 °C in the worst conditions.
3. The wakeup times are measured from the wakeup event to the point in which the application code reads the first instruction.
257
Max
62
75
93
330
6.3.9
Unit
µs
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode, the HSE oscillator is switched off and the input pin is a standard I/O.
The external clock signal has to respect
Table 45. High-speed external user clock characteristics in addition to
analog input clock, the clock squarer must be activated (refer to RM0455).
Table 45. High-speed external user clock characteristics t f
Symbol
HSE_ext
V
V
W(HSEH)
HSEH
HSEL
/t
W(HSEL)
Parameter
User external clock source frequency
Digital OSC_IN input highlevel voltage
Digital OSC_IN input low-level voltage
Digital OSC_IN input high or low time
Conditions
External digital/analog clock
External digital clock
External digital clock
Min
V
4
0.7 V
7
SS
DD
Typ
25
-
-
-
Max
V
50
DD
0.3 V
-
DD
Unit
MHz
V ns t
V lswHSE
(V
HSEH
−V
HSEL
DuCy r(HSE)
/t
HSE f(HSE)
)
Analog low-swing OSC_IN peak-to-peak amplitude
0.2
External analog lowswing clock
Analog low-swing OSC_IN duty cycle
45
Analog low-swing OSC_IN rise and fall times
External analog lowswing clock, 10% to 90%
0.05 / f
HSE_ext
50
-
2/3 V
0.3 / f
55
DD
HSE_ext
V
% ns
1. Guaranteed by design.
2. The rise and fall times for a digital input signal are not specified. However the V
HSEH
and V
HSEL
conditions must be fulfilled.
3. The DC component of the signal must ensure that the signal peaks are located between V
DD
and V
SS
.
DS13196 - Rev 6 page 89/199
Figure 21. High-speed external clock source AC timing diagram
STM32H7B0xB
Operating conditions
VHSEH
VHSEL
90 %
10 % tr(HSE)
External clock source
THSE tf(HSE) fHSE_ext
OS C _IN tW(HSE)
IL
STM32 tW(HSE) t
Low-speed external user clock generated from an external source
In bypass mode, the LSE oscillator is switched off and the input pin is a standard I/O. The external clock
signal has to respect Table 46. Low-speed external user clock characteristics
in addition to Table 63. I/O static characteristics
. The external clock can be low-swing (analog) or digital. In case of a low-swing analog input clock, the clock squarer must be activated (refer to RM0455).
Table 46. Low-speed external user clock characteristics
Symbol f
LSE_ext
V
LSEH
V
LSEL t w(LSEH)
/ t w(LSEL)
V
V lsw_H lsw_L
V lswLSE
(V
LSEH
−V
LSEL
)
DuCy
LSE
Parameter
User external clock source frequency
Digital OSC32_IN input high-level voltage
OSC32_IN input low-level voltage
OSC32_IN high or low time
Analog low-swing OSC_IN high-level voltage
Analog low-swing OSC_IN low-level voltage
Analog low-swing OSC_IN peak-to-peak amplitude
Analog low-swing OSC_IN duty cycle
Conditions
External digital/analog clock
External digital clock
External digital clock
External analog low-swing clock t r(LSE)
/t f(LSE)
Analog low-swing OSC_IN rise and fall times
External analog low-swing clock,
10% to 90%
1. Guaranteed by design.
Min
Unit
-
0.7 V
DD
V
SS
250
32.768
1000 kHz
-
-
V
DD
0.3 V
-
DD
V ns
0.6
1.225
0.35
0.8
V
0.2
0.875
45
-
50
100
55
200
% ns
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com.
DS13196 - Rev 6 page 90/199
Figure 22. Low-speed external clock source AC timing diagram
STM32H7B0xB
Operating conditions
VLSEH
VLSEL
90 %
10 % tr(LSE)
External clock source
T LSE tf(LSE) fLSE_ext
OSC32 _IN tW(LSE) tW(LSE) t
IL
STM32
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 50 MHz crystal/ceramic resonator oscillator.
All the information given in this paragraph are based on characterization results obtained with typical external
components specified in Table 47. 4-50 MHz HSE oscillator characteristics
. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy).
Table 47. 4-50 MHz HSE oscillator characteristics
Symbol
F
R
F
Parameter
Oscillator frequency
Feedback resistor
Operating conditions
-
-
I
DD(HSE)
HSE current consumption
During startup
V
DD
=3 V, Rm=30 Ω
C
L
=10 pF at 4 MHz
V
DD
=3 V, Rm=30 Ω
C
L
=10 pF at 8 MHz
V
DD
=3 V, Rm=30 Ω
C
L
=10 pF at 16 MHz
V
DD
=3 V, Rm=30 Ω
C
L
=10 pF at 32 MHz
V
DD
=3 V, Rm=30 Ω
C
L
=10 pF at 48 MHz
Startup Gm critmax t
SU
Maximum critical crystal gm
Start-up time V
DD
is stabilized
1. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
2. Guaranteed by design.
3. This consumption level occurs during the first 2/3 of the t
SU(HSE)
startup time.
Min
4
-
-
-
-
-
-
-
-
-
-
200
-
0.35
Max
50
-
4
-
0.40
0.45
0.65
0.95
-
2
-
-
-
-
1.5
-
Unit
MHz kΩ mA mA/V ms
DS13196 - Rev 6 page 91/199
STM32H7B0xB
Operating conditions
4. t
SU(HSE)
is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Note:
For C
L1
and C
L2
, it is recommended to use high-quality external ceramic capacitors in the 5 pF to 25 pF range
(typical), designed for high-frequency applications, and selected to match the requirements of the crystal or resonator (see
Figure 23. Typical application with an 8 MHz crystal
). C
L1
and C
L2 are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of C
L1
and C
L2
. The
PCB and MCU pin capacitance must be included (10 pF can be used as a rough estimate of the combined pin and board capacitance) when sizing C
L1
and C
L2
.
For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com.
Resonator with integrated capacitors
C L1
Figure 23. Typical application with an 8 MHz crystal
C L2
8 MHz resonator
R EXT (1)
OSC_ IN
OSC_ OU T
R F
Bias controlled gain fHS E
STM32
Symbol
F
I
DD
Gm critmax
1.
R
EXT
value depends on the crystal characteristics.
Low-speed external clock generated from a crystal/ceramic resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic resonator oscillator.
All the information given in this paragraph are based on characterization results obtained with typical external
components specified in Table 48. Low-speed external user clock characteristics
. In the application, the resonator and the load capacitors have to be placed as close as possible to the oscillator pins in order to minimize output distortion and startup stabilization time. Refer to the crystal resonator manufacturer for more details on the resonator characteristics (frequency, package, accuracy).
Table 48. Low-speed external user clock characteristics
Parameter
Oscillator frequency
LSE current consumption
Maximum critical crystal gm
Operating conditions
-
LSEDRV[1:0] = 00,
Low drive capability
LSEDRV[1:0] = 01,
Medium Low drive capability
LSEDRV[1:0] = 10,
Medium high drive capability
LSEDRV[1:0] = 11,
High drive capability
LSEDRV[1:0] = 00,
Low drive capability
LSEDRV[1:0] = 01,
Min
-
-
-
-
-
-
-
Typ
32.768
290
390
550
900
-
-
Max
-
-
Unit kHz
-
-
-
0.5
0.75
nA
µA/V
DS13196 - Rev 6 page 92/199
STM32H7B0xB
Operating conditions
Symbol
Gm critmax
Parameter
Maximum critical crystal gm
Operating conditions
Medium Low drive capability
LSEDRV[1:0] = 10,
Medium high drive capability
LSEDRV[1:0] = 11,
High drive capability
Min
-
-
t
SU
Startup time VDD is stabilized -
1. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers.
2. Guaranteed by design.
3. t
SU
is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768k Hz oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
Note:
Typ
-
-
2
Max
1.7
2.7
-
For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com.
Unit
µA/V s
Figure 24. Typical application with a 32.768 kHz crystal
Resonator with integrated capacitors C
L1 f
HSE
32.768 kHz resonator
OSC32_IN
OSC32_OUT
R
F
Bias controlled gain
STM32
C
L2
6.3.10
1.
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.
Internal clock source characteristics
The parameters given in Table 49. HSI48 oscillator characteristics
to Table 52. LSI oscillator characteristics
are derived from tests performed under ambient temperature and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions .
48 MHz high-speed internal RC oscillator (HSI48)
Symbol f
HSI48
TRIM
USER TRIM COVERAGE
DuCy(HSI48)
ACCHSI48_REL
ΔV
DD
(HSI48)
Table 49. HSI48 oscillator characteristics
Parameter
HSI48 frequency
User trimming step
User trimming coverage
Duty cycle
Accuracy of the HSI48 oscillator over temperature
(reference is 30 °C)
Conditions Min Typ Max Unit
V
DD
= 3.3 V, T
J
48
MHz
0.175 0.250
%
± 32 steps
-
±4,70
45
±5.6
-
-
55
%
%
T
J
= −40 to 130 °C −4.5
4 %
HSI48 oscillator frequency drift with V
DD
(reference is
3.3 V)
V
DD
= 3 to 3.6 V
V
DD
= 1.62 to 3.6 V -
0.025
0.05
0.05
0.1
%
DS13196 - Rev 6 page 93/199
STM32H7B0xB
Operating conditions
Symbol t su
(HSI48)
I
DD
N
T
P
T
Parameter
HSI48 oscillator startup time
HSI48 oscillator power consumption
Next transition jitter accumulated jitter on 28 cycles
Paired transition jitter Accumulated jitter on 56 cycles
Conditions
-
-
-
-
1. Calibrated during manufacturing tests.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Δf
HSI
= ACCHSI48_REL + ΔV
DD
5. These values are obtained by using the formula: (Freq(3.6 V) − Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) −
Freq(1.62 V)) / Freq(1.62 V).
6. Jitter measurements are performed without clock sources activated in parallel.
64 MHz high-speed internal RC oscillator (HSI)
-
-
Min Typ Max Unit
2.1
4.0
µs
350 400 µA
± 0.15
± 0.25
-
ns ns
Symbol f
HSI
TRIM
HSI frequency
Parameter
HSI user trimming step
Table 50. HSI oscillator characteristics
Conditions
V
DD
=3.3 V, T
J
=30 °C
Trimming is not a multiple of 32 (3)
Trimming is 128, 256 and 384 (3)
Trimming is 64, 192, 320 and 448 (3)
Other trimming are a multiple of 32 (not including multiple of 64 and 128)
DuCy(HSI) Duty Cycle
Δ
VDD (HSI)
HSI oscillator frequency drift over V
DD
(reference is 3.3 V)
V
DD
=1.62 to 3.6 V
Δ
TEMP (HSI)
HSI oscillator frequency drift over temperature
(reference is 64 MHz) t su
(HSI) HSI oscillator start-up time t stab
(HSI) HSI oscillator stabilization time
T
J
=-20 to 105 °C
T
J
=−40 to T
J max °C
at 1 % of target frequency at 5 % of target frequency
I
DD
(HSI) HSI oscillator power consumption
1. Guaranteed by design, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Trimming value of HSICAL[8:0] (refer to RM0455).
4. Guaranteed by characterization results.
4 MHz low-power internal RC oscillator (CSI)
Min
Unit
63.7
-
64
0.24
0.32
MHz
−5.2
−1.8
−1.4
−0.8
-
-
%
−0.6
−0.25
45 -
−0.12
-
-
55 %
0.03
%
-
-
-
-
-
-
1
1
2
%
1.4
µs
4
-
8
4
µs
300 400 µA
Symbol f
CSI
TRIM
Parameter
CSI frequency
Table 51. CSI oscillator characteristics
CSI user trimming step
Conditions
V
DD
= 3.3 V, T
J
= 30 °C
Trimming is not a multiple of 16
Trimming is a multiple of 32
Min
Unit
4
0.40
0.75
−4,75 −2,75 0.75
MHz
-
-
DS13196 - Rev 6 page 94/199
STM32H7B0xB
Operating conditions
Symbol
TRIM
DuCy(CSI)
Parameter
CSI user trimming step
Duty Cycle
∆
TEMP
(CSI) CSI oscillator frequency drift over temperature
∆V
DD
(CSI) t su
(CSI)
CSI oscillator frequency drift over V
CSI oscillator startup time
DD t stab
(CSI)
CSI oscillator stabilization time (to reach ± 3 % of f
CSI
)
CSI oscillator power consumption I
DD
(CSI)
1. Guaranteed by design, unless otherwise specified.
2. Calibrated during manufacturing tests.
3. Guaranteed by characterization results.
Low-speed internal (LSI) RC oscillator
Conditions
Other trimming are a multiple of 16 (not including multiple of 32)
-
T
J
= 0 to 85 °C
T
J
= −40 to 130 °C
V
DD
= 1.62 to 3.6 V
-
-
-
Min
Unit
−0,43
45
−0.06
-
0.00
-
-
-
-
1
0.75
55
0.06
2
%
%
%
%
µs
-
-
23
4
30 cycle
µA
6.3.11
Table 52. LSI oscillator characteristics
Symbol f
LSI
Parameter
LSI frequency t su
(LSI)
t stab
LSI oscillator startup time
LSI oscillator stabilization time (5% of final value)
I
DD
(LSI)
LSI oscillator power consumption
1. Calibrated during manufacturing tests.
2. Guaranteed by characterization results.
3. Guaranteed by design.
Conditions Min Typ Max Unit
V
DD
= 3.3 V, T
J
= 25 °C
T
J
= –40 to 110 °C, V
DD
= 1.62 to 3.6 V 29,76
-
T
J
= –40 to 130 °C, V
DD
-
kHz
80 130
µs
120 170
130 280 nA
PLL characteristics
performed under temperature and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions .
Table 53. PLL characteristics (wide VCO frequency range) f
PLL_P_OUT
PLL multiplier output clock P, Q, R f
Symbol f
PLL_IN
VCO_OUT
Parameter
PLL input clock
PLL input clock duty cycle
PLL VCO output
-
-
VOS0
VOS1
VOS2
-
VOS3
Conditions
Max
Unit
2
10
1
1
1
1
128 -
-
-
-
-
-
-
16
90
280
225
160
88
560
MHz
%
MHz
DS13196 - Rev 6 page 95/199
STM32H7B0xB
Operating conditions
Symbol Parameter Conditions
I t
LOCK
Jitter
DD(PLL)
PLL lock time
Cycle-to-cycle jitter
Long term jitter
PLL power consumption
Normal mode
Sigma-delta mode (f
PLL_IN
≥ 8 MHz) f
VCO_OUT
= 128 MHz f
VCO_OUT
= 200 MHz f
VCO_OUT
= 400 MHz f
VCO_OUT
= 560 MHz
Normal mode (f
PLL_IN
= 2 MHz), f
VCO_OUT
= 560 MHz
Normal mode (f
PLL_IN
= 16 MHz), f
VCO_OUT
= 560 MHz f f
Sigma-delta mode (f
PLL_IN
= 2 MHz), f
VCO_OUT
= 560 MHz
Sigma-delta mode (f
PLL_IN
= 16 MHz), f
VCO_OUT
= 560 MHz
VCO_OUT
VCO_OUT
= 560 MHz
= 128 MHz
V
DD
V
CORE
V
DD
V
CORE
1. Guaranteed by design, unless otherwise specified.
2. This value must be limited to the maximum frequency due to the product limitation.
3. Guaranteed by characterization results.
-
-
-
-
-
-
-
-
-
Max
Unit
45 100
µs
60 120
60 -
-
-
50
20
15
±0.2
±0.8
-
-
-
-
-
±ps
%
±0.2
±0.8
330
-
-
420
630
155
170
-
230
-
µA
Symbol f
PLL_IN f
PLL_OUT t
LOCK
Jitter
I
DD(PLL)
Parameter
PLL input clock
PLL input clock duty cycle
PLL multiplier output clock P, Q, R f
VCO_OUT
PLL VCO output
PLL lock time
Cycle-to-cycle jitter
Period jitter
Long term jitter
Table 54. PLL characteristics (medium VCO frequency range)
PLL power consumption on V
DD
Conditions
-
-
VOS0
VOS1
VOS2
VOS3
-
Normal mode
Sigma-delta mode f
VCO_OUT
= 150 MHz f
VCO_OUT
= 200 MHz f
VCO_OUT
= 400 MHz -
-
f f f
VCO_OUT
= 420 MHz f
VCO_OUT
= 150 MHz
f
PLL_OUT
= 50 MHz f
VCO_OUT
= 400 MHz
Normal mode, f
VCO_OUT
= 400 MHz
VCO_OUT
VCO_OUT
= 420 MHz
= 150 MHz
V
DD
V
CORE
V
DD
-
-
-
-
-
-
-
Min
Typ
Unit
1
10
1.17
1.17
-
-
-
-
2
90
210
210
MHz
%
1.17
1.17
150
-
-
-
45
-
forbidden
60
420
-
MHz
µs
-
40
18
-
-
±ps
15
75
25
-
-
-
±-ps
±0.2
275
450
160
-
360
-
240
%
µA
DS13196 - Rev 6 page 96/199
STM32H7B0xB
Operating conditions
Symbol
I
DD(PLL)
Parameter
PLL power consumption on V
DD f
VCO_OUT
Conditions
= 150 MHz
1. Guaranteed by design, unless otherwise specified.
2. This value must be limited to the maximum frequency due to the product limitation.
3. Guaranteed by characterization results.
6.3.12
V
CORE
Memory characteristics
Flash memory
The characteristics are given at T
J
= –40 to 130 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.
Symbol
I
DD
Parameter
Supply current
Table 55. Flash memory characteristics
Conditions
Word program
Sector erase
Mass erase
Min
-
-
-
Min
Typ
Unit
165 µA
Typ
2.5
1.8
2.0
Max
4
3
3
Unit mA
Symbol t prog
Parameter
Word program time
Table 56. Flash memory programming
-
Conditions
128 bits (user area)
16 bits (OTP area) t
ERASE8KB t
ME
V prog
Sector erase time (8 Kbytes)
Bank mass erase time
Programming voltage
1. Guaranteed by characterization results.
Symbol Parameter
N t
END
RET
-
Endurance
Data retention
1. Guaranteed by characterization results.
Table 57. Flash memory endurance and data retention
Conditions
T
J
= –40 to +130 °C
1 kcycle at T
A
= 85 °C
10 kcycles at T
A
= 55 °C
Min
-
-
-
-
1.62
Typ
-
-
-
-
-
Value
10
30
20
Max
20
20
2.2
10
3.6
kcycles
Unit
Years
Unit
µs ms
V
DS13196 - Rev 6 page 97/199
6.3.13
STM32H7B0xB
Operating conditions
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:
•
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB : A burst of fast transient voltage (positive and negative) is applied to V
DD
and V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 58. EMS characteristics
. They are based on the EMS levels and classes defined in application note AN1709.
Table 58. EMS characteristics
Symbol Parameter Conditions
V
FESD
V
FTB
Voltage limits to be applied on any I/O pin to induce a functional disturbance
Fast transient voltage burst limits to be applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
= 3.3 V, T
A
= +25 °C, LQFP144, f
216 MHz, conforms to IEC 61000-4-2 rcc_cpu_ck
=
Level/
Class
3B
5A
As a consequence, it is recommended to add a serial resistor (1 kΏ) located as close as possible to the MCU to the pins exposed to noise (connected to tracks longer than 50 mm on PCB).
Designing hardened software to avoid noise problems
•
•
•
EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of specification values.
When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring
(see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading.
DS13196 - Rev 6 page 98/199
STM32H7B0xB
Operating conditions
Table 59. EMI characteristics
Symbol Parameter Conditions
S
EMI
Peak level
V
DD
= 3.6 V, T
A
= 25 °C, LQFP144 package, conforming to
IEC61967-2
6.3.14
Monitored frequency band
0.1 to 30 MHz
30 to 130 MHz
130 MHz to 1 GHz
1 GHz to 2 GHz
EMI Level
Max vs. [f
HSE f
CPU
]
/
8/216 MHz
12
17
15
14
3.5
Unit dBµV
-
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002 standards.
Table 60. ESD absolute maximum ratings
Symbol Ratings Conditions Packages Class
V
V
ESD(HBM)
ESD(CDM)
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
T
JEDEC JS-001
T
A
A
= +25 °C conforming to ANSI/ESDA/
= +25 °C conforming to ANSI/ESDA/
JEDEC JS-002
Packages with
SMPS
Packages without
SMPS
1C
2
All LQFP packages C1
All BGA packages C2a
1. Guaranteed by characterization results.
2. The electrostatic discharge is 2000 V for all pins, except V
FBSMPS passes at 1600 V.
, for which the test fails at 2000 V and
Maximum value
1000
Unit
2000
250
500
V
Static latchup
Two complementary static tests are required on six parts to assess the latchup performance:
•
•
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with JESD78 IC latchup standard.
Symbol
LU
Parameter
Static latchup class
Table 61. Electrical sensitivities
Conditions
T
J
= +130 °C, conforming to JESD78
Class
II level A
DS13196 - Rev 6 page 99/199
STM32H7B0xB
Operating conditions
6.3.15
I/O current injection characteristics
As a general rule, a current injection to the I/O pins, due to external voltage below V
SS
or above V
DD
(for standard, 3.3 V-capable I/O pins) should be avoided during the normal product operation. However, in order to give an indication of the robustness of the microcontroller in cases when an abnormal injection accidentally happens, susceptibility tests are performed on a sample basis during the device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting current into the I/O pins programmed in floating input mode. While current is injected into the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency deviation).
The following tables are the compilation of the SIC1/SIC2 and functional ESD results.
Negative induced A negative induced leakage current is caused by negative injection and positive induced leakage current by positive injection.
Symbol
I
INJ
Table 62. I/O current injection susceptibility
Description
Functional susceptibility
Negative injection Positive injection
Unit
0 NA PF2, PI12
PG1, PE9, PB0, PA7, PC4, PC5, PE7, PE8, PA4, PA5, PA6, PF2, PI12, PC2_C,
PC3_C, PA0_C, PA1_C, BOOT0
All other I/Os
0
5
0
NA mA
6.3.16
Note:
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
Table 63. I/O static characteristics are derived from tests
performed under the conditions summarized in
Table 20. General operating conditions
. All I/Os are CMOS and
TTL compliant (except for BOOT0).
For information on GPIO configuration, refer to the application note AN4899 “STM32 GPIO configuration for hardware settings and low-power consumption” available from the ST website www.st.com
.
Table 63. I/O static characteristics
Symbol
V
V
V
IL
IH
HYS
Parameter
I/O input low-level voltage except BOOT0
I/O input low-level voltage except BOOT0
BOOT0 I/O input low level voltage
I/O input high level voltage except BOOT0
I/O input high level voltage except BOOT0
BOOT0 I/O input high level voltage
TT_xx, FT_xxx and NRST I/O input hysteresis
BOOT0 I/O input hysteresis
Condition
1.62 V < V
DDIOx
< 3.6 V
1.62 V < V
DDIOx
< 3.6 V
1.62 V < V
DDIOx
< 3.6 V
I leak
FT_xx input leakage current (2)
0 < V
IN
≤ Max(V
DDxxx
Max(V
DDxxx
) < V
IN
Min Typ Max
-
-
-
0.7V
DD
0.47V
DD
0.17V
DD
+0.6
-
-
-
-
250
200
-
-
0.3V
DD
0.4V
DD
−0.1
0.19V
DD
+0.1
-
-
-
-
-
Unit
V
V mV
-
-
-
±250
1500 nA
DS13196 - Rev 6 page 100/199
STM32H7B0xB
Operating conditions
Symbol
I leak
RPU
RPD
CIO
Parameter
FT_u I/O
TT_xx input leakage current
VPP (BOOT0 alternate function)
Weak pull-up equivalent resistor (7)
Weak pull-down equivalent resistor
I/O pin capacitance
Condition
0 < V
IN
≤ Max(V
DDxxx
Max(V
DDxxx
) < V
IN
≤ 5.5 V
0 < V
IN
≤ Max(V
DDxxx
0 < V
IN
≤ V
DDIOx
V
DDIOx
< V
IN
≤ 9 V
V
IN
= V
SS
V
IN
= V
DD
-
Min
-
-
-
-
-
30
30
-
1. Compliant with CMOS requirements.
2. Guaranteed by design.
3. All FT_xx IO except FT_lu and FT_u.
4. V
IN
must be less than Max(V
DDxxx
) + 3.6 V.
5. Max(V
DDxxx
) is the maximum value of all the I/O supplies.
6. To sustain a voltage higher than MIN(V
DD
, V
DDA
, V
DD33USB
) +0.3 V, the internal pull-up and pull-down resistors must be disabled.
7. The pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/
NMOS. This PMOS/NMOS contribution to the series resistance is minimal (~10%).
-
40
40
5
-
-
Typ
-
-
Max
±350
5000
±250
15
35
50
50
-
Unit nA uA kΩ pF
All I/Os are CMOS and TTL compliant (no software configuration required). Their characteristics cover more than the strict CMOS-technology or TTL parameters. The coverage of these requirements for FT I/Os is shown in
.
Figure 25. V
IL
/V
IH
for all I/Os except BOOT0
DS13196 - Rev 6
Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or source up to ±20 mA
(with a relaxed V
OL
/V
OH
).
page 101/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
In the user application, the number of I/O pins which can drive current must be limited to respect the absolute maximum rating specified in
Section 6.2 Absolute maximum ratings . In particular:
•
•
The sum of the currents sourced by all the I/Os on V
DD, plus the maximum Run consumption of the MCU sourced on V
DD, cannot exceed the absolute maximum rating ΣI
VDD
(see Table 18. Current characteristics ).
The sum of the currents sunk by all the I/Os on V
SS on V
SS
plus the maximum Run consumption of the MCU sunk
cannot exceed the absolute maximum rating ΣI
VSS
(see
Table 18. Current characteristics
).
Output voltage levels
Unless otherwise specified, the parameters given in
Table 64. Output voltage characteristics for all I/Os except
derived from tests performed under ambient temperature and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions . All I/Os are CMOS and TTL compliant.
Table 64. Output voltage characteristics for all I/Os except PC13, PC14, PC15 and PI8
absolute maximum ratings ΣIIO.
Symbol Parameter Conditions
Min Max Unit
V
V
V
V
V
V
V
V
OL
OH
OL
OH
OL
OH
OL
V
OH
OLFM+
Output low level voltage
Output high level voltage
Output low level voltage
Output high level voltage
Output low level voltage
Output high level voltage
Output low level voltage
Output high level voltage
Output low level voltage for an FTf I/O pin in FM+ mode
CMOS port
I
IO
=8 mA
2.7 V≤ V
DD
≤3.6 V
CMOS port
I
IO
= −8 mA
2.7 V≤ V
DD
≤3.6 V
V
DD
-
−0.4
0.4
-
I
IO
=8 mA
2.7 V≤ V
DD
≤3.6 V
I
IO
=-8 mA
2.7 V≤ V
DD
≤3.6 V
I
IO
=20 mA
2.7 V≤ V
DD
≤3.6 V
I
IO
=−20 mA
2.7 V≤ V
DD
≤3.6 V
I
IO
= 4 mA
1.62 V≤ V
DD
≤3.6 V
V
2.4
DD
-
-
-
−1.3
0.4
-
-
1.3
0.4
I
IO
= −4 mA 1.62 V≤V
DD
<3.6 V V
DD
−0.4
-
I
IO
= 20 mA
2.3 V≤ V
DD
≤3.6 V
0.4
I
IO
= 10 mA
1.62 V≤ V
DD
≤3.6 V
0.4
1. Guaranteed by design.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
V
Table 65. Output voltage characteristics for PC13, PC14, PC15 and PI8
absolute maximum ratings ΣIIO.
page 102/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
V
V
Symbol
OL
OH
V
OL
V
OH
V
OL
V
OH
V
OL
V
OH
Parameter
Output low level voltage
Output high level voltage
Output low level voltage
Output high level voltage
Output low level voltage
Output high level voltage
Output low level voltage I
I
I
IO
IO
IO
IO
IO
Conditions
=−8 mA, 2.7 V ≤ V
DD
=20 mA, 2.7 V ≤ V
DD
= −20 mA, 2.7 V ≤ V
DD
= 4 mA, 1.62 V ≤ V
DD
= 8 mA, 2.7 V≤ V
≤ 3.6 V
DD
≤ 3.6 V
≤ 3.6 V
V
OLFM+
Output high level voltage
Output low level voltage for an FT_f I/O pin in FM+ mode
I
IO
= −4 mA, 1.62 V ≤ V
DD
< 3.6 V
I
IO
= 20 mA, 2.3 V ≤ V
DD
≤ 3.6 V
I
IO
= 10 mA, 1.62 V ≤ V
DD
≤ 3.6 V
1. Guaranteed by design.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
≤ 3.6 V
≤ 3.6 V
-
-
-
-
-
2.4
Min
VDD−1.3 -
VDD−0.4 -
-
Max Unit
I
IO
=8 mA, 2.7 V≤ VDD ≤ 3.6 V -
I
IO
= −8 mA, 2.7 V≤ V
DD
≤ 3.6 V
0.4
V
DD
−0.4 -
0.4
1.3
0.4
0.4
0.4
V
Output buffer timing characteristics (HSLV option disabled)
The HSLV bit of SYSCFG_CCCSR register can be used to optimize the I/O speed when the product voltage is below 2.7 V.
Speed Symbol
00
01
F max
t r
/t f
F max
t r
/t f
Table 66. Output timing characteristics (HSLV OFF)
Parameter
Maximum frequency
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time conditions
C=50 pF, 2.7 V≤ V
DD
≤3.6 V
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
≤3.6 V
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
≤3.6 V
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤ V
DD
≤3.6 V
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
≤3.6 V
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
≤3.6 V
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤ V
DD
≤3.6 V
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
≤3.6 V
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
≤3.6 V
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤ V
DD
≤3.6 V
C=50 pF, 1.62 V≤V
DD
≤2.7 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
12
-
3
12
MHz
-
3
16
4
16.6
33.3
13.3
25
10
20
60
15
80 ns
MHz
15
110
20
5.2
10 ns page 103/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Speed Symbol
01
10
11
F
F t t t r r r
/t max
/t max
/t f f f
Parameter
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time conditions
C=30 pF, 2.7 V≤V
DD
≤3.6 V
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
≤3.6 V
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤V
DD
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤V
DD
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤V
DD
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
C=10 pF, 1.62 V≤V
DD
≤2.7 V
C=50 pF, 2.7 V≤V
DD
C=50 pF, 1.62 V≤V
DD
≤2.7 V
C=30 pF, 2.7 V≤V
DD
C=30 pF, 1.62 V≤V
DD
≤2.7 V
C=10 pF, 2.7 V≤V
DD
C=10 pF, 1.62 V≤V
DD
≤2.7 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.2
7.5
2.8
5.2
85
35
110
40
166
100
3.8
6.9
2.8
5.2
1.8
3.3
100
50
133
66
220
85
3.3
6.6
2.4
4.5
1.5
2.7
Unit ns
MHz ns
MHz ns
1. Guaranteed by design.
2. The maximum frequency is defined with the following conditions: (t r
+t f
) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.
5. Reserved for output clock only.
Output buffer timing characteristics (HSLV option enabled)
Speed Symbol
00 F max
Table 67. Output timing characteristics (HSLV ON)
Parameter
Maximum frequency conditions
C=50 pF, 1.62 V≤VDD≤2.7 V
Unit
10
MHz page 104/199
6.3.17
STM32H7B0xB
Operating conditions
Speed Symbol
00
01
10
11
F
F
F
F t t t t max
r r r
/t
/t
/t f
max
r
/t f
max
f
max
f
Parameter
Maximum frequency
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time
Maximum frequency
Output high to low level fall time and output low to high level rise time conditions
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
C=50 pF, 1.62 V≤VDD≤2.7 V
C=30 pF, 1.62 V≤VDD≤2.7 V
C=10 pF, 1.62 V≤VDD≤2.7 V
Unit
-
-
-
-
-
-
-
-
-
-
-
-
MHz ns
MHz ns
6.6
4.8
3
55
50
58
66
10
10
11
9
6.6
-
-
-
-
-
-
-
-
-
-
-
80
133
5.8
4
2.4
60
90
175
5.3
3.6
1.9
MHz ns
MHz ns
1. Guaranteed by design.
2. The maximum frequency is defined with the following conditions: (t r
+t f
) ≤ 2/3 T, skew ≤ 1/20 T, 45%<Duty cycle<55%
3. The fall and rise times are defined between 90% and 10% and between 10% and 90% of the output waveform, respectively.
4. Compensation system enabled.
5. Reserved for output clock only.
NRST pin characteristics
The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up resistor, R
PU
(see
Table 63. I/O static characteristics ).
Unless otherwise specified, the parameters given in
Table 68. NRST pin characteristics
are derived from tests performed under the ambient temperature and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions .
Symbol
R
PU
V
F(NRST)
V
NF(NRST)
Table 68. NRST pin characteristics
Parameter
Weak pull-up equivalent resistor (2)
NRST Input filtered pulse
NRST Input not filtered pulse
Conditions
V
IN
= V
SS
1.71 V < V
DD
< 3.6 V
1.71 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
Min
30
-
350
1000
Typ Max Unit
40 50 ㏀
-
-
-
50
-
ns
DS13196 - Rev 6 page 105/199
STM32H7B0xB
Operating conditions
1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series resistance must be minimum (~10%).
Figure 26. Recommended NRST pin protection
External reset circuit (1)
NRST (2)
VDD
R PU
0.1 µF
Filter
Internal Reset
STM32
6.3.18
Note:
1.
The reset network protects the device against parasitic resets.
2.
The user must ensure that the level on the NRST pin can go below the V
IL(NRST)
max level specified in
Table 63. I/O static characteristics . Otherwise the reset is not taken into account by the device.
•
•
•
•
•
FMC characteristics
Unless otherwise specified, the parameters given in the below tables for the FMC interface are derived from tests performed under the ambient temperature, f
HCLK
frequency and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions , with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS0.
At VOS1, the performance in some FMC modes can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics.
Asynchronous waveforms and timings
represent asynchronous waveforms and
provide the corresponding timings. The results shown in these tables are obtained with the following FMC configuration:
•
•
•
•
•
AddressSetupTime = 0x1
AddressHoldTime = 0x1
DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)
BusTurnAroundDuration = 0x0
Capacitive load C
L
= 30 pF
In all timing tables, T fmc_ker_ck
is the kernel clock period.
DS13196 - Rev 6 page 106/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 27. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms t w(NE)
FMC_NE t v(NOE_NE) t w(NOE) t h(NE_NOE)
FMC_NOE
FMC_NWE
FMC_A[25:0]
t
v(A_NE)
t
v(BL_NE)
Address t h(A_NOE) t h(BL_NOE)
FMC_NBL[1:0] t h(Data_NE) t h(Data_NOE)
FMC_D[15:0] t su(Data_NOE) t su(Data_NE)
Data t v(NADV_NE) t w(NADV)
FMC_NADV (1)
FMC_NWAIT th(NE_NWAIT) tsu(NWAIT_NE)
1.
Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
Symbol t w(NE) t v(NOE_NE) t w(NOE) t h(NE_NOE) t v(A_NE) t h(A_NOE) t su(Data_NE) t su(Data_NOE) t h(Data_NOE)
Table 69. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings
Parameter
FMC_NE low time
FMC_NEx low to FMC_NOE low
FMC_NOE low time
FMC_NOE high to FMC_NE high hold time
FMC_NEx low to FMC_A valid
Address hold time after FMC_NOE high
Data to FMC_NEx high setup time
Data to FMC_NOEx high setup time
Data hold time after FMC_NOE high
3T fmc_ker_ck
− 1
0
2T fmc_ker_ck
− 1
0
-
0
13
11
0
Max
3T fmc_ker_ck
+1
0.5
2T fmc_ker_ck
+ 1
-
0.5
-
-
-
-
Unit ns page 107/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol t h(Data_NE) t v(NADV_NE) t w(NADV)
Parameter
Data hold time after FMC_NEx high
FMC_NEx low to FMC_NADV low
FMC_NADV low time
1. Guaranteed by characterization results.
0
-
-
Max
-
0
T fmc_ker_ck
+ 1
Unit ns
Table 70. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings
NWAIT pulse width is equal to 1 AHB cycle.
Symbol Parameter
t w(NE) t w(NOE) t w(NWAIT) t su(NWAIT_NE) t h(NE_NWAIT)
FMC_NE low time
FMC_NWE low time
FMC_NWAIT low time
FMC_NWAIT valid before FMC_NEx high
FMC_NEx hold time after FMC_NWAIT invalid
7T fmc_ker_ck +1
5T fmc_ker_ck −1
T fmc_ker_ck −1
−0.5
4T fmc_ker_ck
+9
3T fmc_ker_ck
+12
7T fmc_ker_ck +1
5T fmc_ker_ck
+1
-
-
-
1. Guaranteed by characterization results.
Unit ns
Figure 28. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms tw(NE)
FMC_NEx
FMC_NOE
FMC_NWE
FMC_A[25:0]
FMC_NBL[1:0]
FMC_D[15:0]
FMC_NADV(1) tv(NWE_NE) tw(NWE) tv(A_NE) tv(BL_NE) tv(Data_NE) tv(NADV_NE) tw(NADV) th(A_NWE)
Address th(BL_NWE)
NBL th(Data_NWE)
Data th(NE_NWE)
FMC_NWAIT th(NE_NWAIT) tsu(NWAIT_NE) page 108/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
1.
Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
Table 71. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
Symbol t w(NE) t v(NWE_NE) t w(NWE) t h(NE_NWE) t v(A_NE) t h(A_NWE) t v(BL_NE) t h(BL_NWE) t v(Data_NE) t h(Data_NWE) t v(NADV_NE) t w(NADV)
Parameter
FMC_NE low time
FMC_NEx low to FMC_NWE low
FMC_NWE low time
FMC_NWE high to FMC_NE high hold time
FMC_NEx low to FMC_A valid
Address hold time after FMC_NWE high
FMC_NEx low to FMC_BL valid
FMC_BL hold time after FMC_NWE high
Data to FMC_NEx low to Data valid
Data hold time after FMC_NWE high
FMC_NEx low to FMC_NADV low
FMC_NADV low time
1. Guaranteed by characterization results.
3T fmc_ker_ck − 1
T fmc_ker_ck
− 1
T fmc_ker_ck
− 0.5
T fmc_ker_ck
-
T fmc_ker_ck
+ 0.5
-
T fmc_ker_ck
− 0.5
-
T fmc_ker_ck+1
-
-
3T fmc_ker_ck + 1
T fmc_ker_ck
T fmc_ker_ck
+ 0.5
-
2
-
0.5
-
T fmc_ker_ck
+ 3
-
0
T fmc_ker_ck
+ 1
Unit ns
Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR write-NWAIT timings
NWAIT pulse width is equal to 1 AHB cycle.
Symbol Parameter
t w(NE) t w(NWE) t su(NWAIT_NE) t h(NE_NWAIT)
FMC_NE low time
FMC_NWE low time
FMC_NWAIT valid before FMC_NEx high
FMC_NEx hold time after FMC_NWAIT invalid
8T fmc_ker_ck − 1
6T fmc_ker_ck − 1
5T fmc_ker_ck
+ 13
4T fmc_ker_ck
+ 12
8T fmc_ker_ck + 1
6T fmc_ker_ck + 1
-
-
1. Guaranteed by characterization results.
Unit ns page 109/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 29. Asynchronous multiplexed PSRAM/NOR read waveforms tw(NE)
FMC_NE tv(NOE_NE) th(NE_NOE)
FMC_NOE tw(NOE)
FMC_NWE tv(A_NE) th(A_NOE)
FMC_A[25:16]
Address tv(BL_NE) th(BL_NOE)
FMC_NBL[1:0] NBL
FMC_AD[15:0] tv(NADV_NE) tv(A_NE)
Address th(AD_NADV) tw(NADV) tsu(Data_NE) tsu(Data_NOE)
Data th(Data_NE) th(Data_NOE)
FMC_NADV
FMC_NWAIT th(NE_NWAIT) tsu(NWAIT_NE)
Symbol t w(NE) t v(NOE_NE) t w(NOE) t h(NE_NOE) t v(A_NE) t v(NADV_NE) t w(NADV) t h(AD_NADV) t h(A_NOE) t su(Data_NE) t su(Data_NOE)
Table 73. Asynchronous multiplexed PSRAM/NOR read timings
Parameter
FMC_NE low time
FMC_NEx low to FMC_NOE low
FMC_NOE low time
FMC_NOE high to FMC_NE high hold time
FMC_NEx low to FMC_A valid
FMC_NEx low to FMC_NADV low
FMC_NADV low time
FMC_AD(address) valid hold time after FMC_NADV high
Address hold time after FMC_NOE high
Data to FMC_NEx high setup time
Data to FMC_NOE high setup time
4T fmc_ker_ck − 1
2T fmc_ker_ck
T fmc_ker_ck
− 1
0
-
0
T fmc_ker_ck
− 0.5
T fmc_ker_ck
+ 0.5
T fmc_ker_ck
− 0.5
13
11
Max
4T fmc_ker_ck + 1
2T fmc_ker_ck + 0.5
T fmc_ker_ck
+ 1
-
0.5
0.5
T fmc_ker_ck
+1
-
-
-
-
Unit ns page 110/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol t h(Data_NE) t h(Data_NOE)
1. Guaranteed by characterization results.
Parameter
Data hold time after FMC_NEx high
Data hold time after FMC_NOE high
0
0
Max
-
-
Unit ns
Table 74. Asynchronous multiplexed PSRAM/NOR read - NWAIT timings
Symbol t w(NE) t w(NOE) t su(NWAIT_NE) t h(NE_NWAIT)
Parameter
FMC_NE low time
FMC_NWE low time
FMC_NWAIT valid before FMC_NEx high
FMC_NEx hold time after FMC_NWAIT invalid
1. Guaranteed by characterization results.
8T fmc_ker_ck
− 1
5T fmc_ker_ck
− 1
4T fmc_ker_ck
+ 9
4T fmc_ker_ck
+ 12
8T fmc_ker_ck
+ 1
5T fmc_ker_ck
+ 1
-
-
Unit ns
Table 75. Asynchronous multiplexed PSRAM/NOR write timings
Symbol t w(NE) t v(NWE_NE) t w(NWE) t h(NE_NWE) t v(A_NE) t v(NADV_NE) t w(NADV) t h(AD_NADV) t h(A_NWE) t h(BL_NWE) t v(BL_NE) t v(Data_NADV) t h(Data_NWE)
Parameter
FMC_NE low time
FMC_NEx low to FMC_NWE low
FMC_NWE low time
FMC_NWE high to FMC_NE high hold time
FMC_NEx low to FMC_A valid
FMC_NEx low to FMC_NADV low
FMC_NADV low time
FMC_AD(address) valid hold time after FMC_NADV high
Address hold time after FMC_NWE high
FMC_BL hold time after FMC_NWE high
FMC_NEx low to FMC_BL valid
FMC_NADV high to Data valid
Data hold time after FMC_NWE high
1. Guaranteed by characterization results.
Max
4T fmc_ker_ck
− 1
Tfmc_ker_c − 1
4T fmc_ker_ck
T fmc_ker_ck
+ 0.5
2T fmc_ker_ck
− 0.5
2T fmc_ker_ck
+ 0.5
T fmc_ker_ck
− 0.5
-
0
0
T fmc_ker_ck
T fmc_ker_ck
+ 0.5
T fmc_ker_ck
+ 0.5
T fmc_ker_ck
− 0.5
-
-
T fmc_ker_ck
+0.5
0.5
T fmc_ker_ck
+ 1
-
-
-
0.5
T fmc_ker_ck
-
+ 2
Unit ns
Table 76. Asynchronous multiplexed PSRAM/NOR write - NWAIT timings
Symbol t w(NE) t w(NWE) t su(NWAIT_NE) t h(NE_NWAIT)
Parameter
FMC_NE low time
FMC_NWE low time
FMC_NWAIT valid before FMC_NEx high
FMC_NEx hold time after FMC_NWAIT invalid
1. Guaranteed by characterization results.
9T fmc_ker_ck
− 1
7T fmc_ker_ck
− 0.5
5T fmc_ker_ck
+ 9
4T fmc_ker_ck
+ 12
Max
9T fmc_ker_ck
7T fmc_ker_ck
+ 0.5
-
-
Synchronous waveforms and timings
represent synchronous waveforms and Table 77
through
corresponding timings. The results shown in these tables are obtained with the following FMC configuration:
Unit ns page 111/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
•
•
•
•
BurstAccessMode = FMC_BurstAccessMode_Enable
MemoryType = FMC_MemoryType_CRAM
WriteBurst = FMC_WriteBurst_Enable
CLKDivision = 1
• DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
In all timing tables, T fmc_ker_ck
is the kernel clock period, with the following FMC_CLK maximum values:
•
•
•
For 2.7 V < V
DD
< 3.6 V, FMC_CLK = 125 MHz at 20 pF
For 1.8 V < V
DD
< 1.9 V, FMC_CLK = 100 MHz at 20 pF
For 1.62 V < V
DD
<1.8 V, FMC_CLK = 100 MHz at 15 pF
Figure 30. Synchronous multiplexed NOR/PSRAM read timings tw(CLK) tw(CLK) BUSTURN = 0
FMC_CLK td(CLKL-NExL)
Data latency = 0 td(CLKH-NExH)
FMC_NEx td(CLKL-NADVL)
FMC_NADV td(CLKL-NADVH) td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:16] td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE td(CLKL-ADV)
FMC_AD[15:0]
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) td(CLKL-ADIV)
AD[15:0] tsu(ADV-CLKH) tsu(NWAITV-CLKH)
D1 th(CLKH-ADV) tsu(ADV-CLKH) tsu(NWAITV-CLKH)
D2 th(CLKH-NWAITV) th(CLKH-ADV) th(CLKH-NWAITV) tsu(NWAITV-CLKH) th(CLKH-NWAITV)
Symbol t w(CLK) t d(CLKL-NExL) t d(CLKH_NExH)
Table 77. Synchronous multiplexed NOR/PSRAM read timings
Parameter
FMC_CLK period
FMC_CLK low to FMC_NEx low (x=0..2)
FMC_CLK high to FMC_NEx high (x= 0…2)
Min
2T fmc_ker_ck
–0.5
-
T fmc_ker_ck
+1.5
-
2
-
Unit ns page 112/199
Symbol t d(CLKL-NADVL) t d(CLKL-NADVH) t d(CLKL-AV) t d(CLKH-AIV) t d(CLKL-NOEL) t d(CLKH-NOEH) t d(CLKL-ADV) t d(CLKL-ADIV) t su(ADV-CLKH) t h(CLKH-ADV) t su(NWAIT-CLKH) t h(CLKH-NWAIT)
Parameter
FMC_CLK low to FMC_NADV low
FMC_CLK low to FMC_NADV high
FMC_CLK low to FMC_Ax valid (x=16…25)
FMC_CLK high to FMC_Ax invalid (x=16…25)
FMC_CLK low to FMC_NOE low
FMC_CLK high to FMC_NOE high
FMC_CLK low to FMC_AD[15:0] valid
FMC_CLK low to FMC_AD[15:0] invalid
FMC_A/D[15:0] valid data before FMC_CLK high
FMC_A/D[15:0] valid data after FMC_CLK high
FMC_NWAIT valid before FMC_CLK high
FMC_NWAIT valid after FMC_CLK high
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
STM32H7B0xB
Operating conditions
Min
-
0
-
T fmc_ker_ck
+1.5
-
T fmc_ker_ck
+1.5
-
0
3
0.5
3
1
-
-
-
-
-
1.5
-
3
Unit
1
-
2.0
ns
DS13196 - Rev 6 page 113/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
FMC_CLK
Figure 31. Synchronous multiplexed PSRAM write timings tw(CLK) tw(CLK) BUSTURN = 0 td(CLKL-NExL)
Data latency = 0 td(CLKH-NExH)
FMC_NEx td(CLKL-NADVL)
FMC_NADV td(CLKL-NADVH) td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:16] td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE td(CLKL-ADV)
FMC_AD[15:0]
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) td(CLKL-ADIV)
AD[15:0] td(CLKL-Data) td(CLKL-Data)
D1 D2 tsu(NWAITV-CLKH) th(CLKH-NWAITV) td(CLKH-NBLH)
FMC_NBL
Symbol t w(CLK) t d(CLKL-NExL) t d(CLKH-NExH) t d(CLKL-NADVL) t d(CLKL-NADVH) t d(CLKL-AV) t d(CLKH-AIV) t d(CLKL-NWEL) t
(CLKH-NWEH)
Table 78. Synchronous multiplexed PSRAM write timings
Parameter
FMC_CLK period
FMC_CLK low to FMC_NEx low (x =0..2)
FMC_CLK high to FMC_NEx high
(x = 0…2)
FMC_CLK low to FMC_NADV low
FMC_CLK low to FMC_NADV high
FMC_CLK low to FMC_Ax valid
(x =16…25)
FMC_CLK high to FMC_Ax invalid
(x =16…25)
FMC_CLK low to FMC_NWE low
FMC_CLK high to FMC_NWE high
Min
2T fmc_ker_ck
–1
-
T fmc_ker_ck
+1.5
-
0
-
T fmc_ker_ck
+1.5
-
T fmc_ker_ck
+1
-
2
Unit
-
1.5
-
2 ns
-
1.5
page 114/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol t d(CLKL-ADV) t d(CLKL-ADIV) t d(CLKL-DATA) t d(CLKL-NBLL) t d(CLKH-NBLH) t su(NWAIT-CLKH) t h(CLKH-NWAIT)
Parameter
FMC_CLK low to to FMC_AD[15:0] valid
FMC_CLK low to FMC_AD[15:0] invalid
FMC_A/D[15:0] valid data after FMC_CLK low
FMC_CLK low to FMC_NBL low
FMC_CLK high to FMC_NBL high
FMC_NWAIT valid before FMC_CLK high
FMC_NWAIT valid after FMC_CLK high
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
Min
-
0
-
-
T fmc_ker_ck
+0.5
2
2
Figure 32. Synchronous non-multiplexed NOR/PSRAM read timings tw(CLK)
FMC_CLK td(CLKL-NExL)
FMC_NEx td(CLKL-NADVL) tw(CLK)
Data latency = 0 td(CLKL-NADVH) td(CLKH-NExH)
FMC_NADV td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:0] td(CLKL-NOEL) td(CLKH-NOEH)
FMC_NOE tsu(DV-CLKH)
FMC_D[15:0] tsu(NWAITV-CLKH)
D1 th(CLKH-DV) tsu(DV-CLKH)
D2 th(CLKH-NWAITV) th(CLKH-DV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) tsu(NWAITV-CLKH) t h(CLKH-NWAITV) th(CLKH-NWAITV)
Unit
2.5
-
3
2 ns
-
-
-
Symbol t w(CLK) t
(CLKL-NExL)
Table 79. Synchronous non-multiplexed NOR/PSRAM read timings
Parameter
FMC_CLK period
FMC_CLK low to FMC_NEx low (x=0..2)
2T fmc_ker_ck
–0.5
-
-
2
Unit ns page 115/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions t
Symbol d(CLKH-NExH)
Parameter
FMC_CLK high to FMC_NEx high
(x= 0…2)
FMC_CLK low to FMC_NADV low t d(CLKL-NADVL) t d(CLKL-NADVH) t d(CLKL-AV) t d(CLKH-AIV) t d(CLKL-NOEL) t d(CLKH-NOEH) t su(DV-CLKH) t h(CLKH-DV) t
(NWAIT-CLKH) t h(CLKH-NWAIT)
FMC_CLK low to FMC_NADV high
FMC_CLK low to FMC_Ax valid (x=16…25)
FMC_CLK high to FMC_Ax invalid (x=16…25)
FMC_CLK low to FMC_NOE low
FMC_CLK high to FMC_NOE high
FMC_D[15:0] valid data before FMC_CLK high
FMC_D[15:0] valid data after FMC_CLK high
FMC_NWAIT valid before FMC_CLK high
FMC_NWAIT valid after FMC_CLK high
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
T fmc_ker_ck
+1.5
-
0
-
T fmc_ker_ck
+1.5
-
T fmc_ker_ck
+1
3
0.5
3
1
FMC_CLK tw(CLK) td(CLKL-NExL)
FMC_NEx td(CLKL-NADVL)
FMC_NADV
Figure 33. Synchronous non-multiplexed PSRAM write timings tw(CLK)
Data latency = 0 td(CLKL-NADVH) td(CLKH-NExH) td(CLKL-AV) td(CLKH-AIV)
FMC_A[25:0] td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE
FMC_D[15:0] td(CLKL-Data)
D1 td(CLKL-Data)
D2
Unit
-
1.5
-
2
-
1.5
-
-
-
-
ns
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
FMC_NBL tsu(NWAITV-CLKH) td(CLKH-NBLH) th(CLKH-NWAITV) page 116/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Table 80. Synchronous non-multiplexed PSRAM write timings
Symbol t
(CLK) t d(CLKL-NExL) t
(CLKH-NExH) t d(CLKL-NADVL) t d(CLKL-NADVH) t d(CLKL-AV) t d(CLKH-AIV) t d(CLKL-NWEL) t d(CLKH-NWEH) t d(CLKL-Data) t d(CLKL-NBLL) t d(CLKH-NBLH) t su(NWAIT-CLKH) t h(CLKH-NWAIT)
FMC_CLK period
Parameter
FMC_CLK low to FMC_NEx low (x=0..2)
FMC_CLK high to FMC_NEx high (x= 0…2)
FMC_CLK low to FMC_NADV low
FMC_CLK low to FMC_NADV high
FMC_CLK low to FMC_Ax valid (x=16…25)
FMC_CLK high to FMC_Ax invalid (x=16…25)
FMC_CLK low to FMC_NWE low
FMC_CLK high to FMC_NWE high
FMC_D[15:0] valid data after FMC_CLK low
FMC_CLK low to FMC_NBL low
FMC_CLK high to FMC_NBL high
FMC_NWAIT valid before FMC_CLK high
FMC_NWAIT valid after FMC_CLK high
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
-
0
-
Min
2T fmc_ker_ck
− 0.5
T fmc_ker_ck
+ 1.5
-
-
T fmc_ker_ck
+ 1.5
-
-
T fmc_ker_ck
+ 1
T fmc_ker_ck
+ 0.5
2
2
NAND controller waveforms and timings
through Figure 37 represent synchronous waveforms, and Table 81
provide the corresponding timings. The results shown in this table are obtained with the following FMC configuration:
•
•
•
•
•
•
•
•
•
•
•
•
COM.FMC_SetupTime = 0x01
COM.FMC_WaitSetupTime = 0x03
COM.FMC_HoldSetupTime = 0x02
COM.FMC_HiZSetupTime = 0x01
ATT.FMC_SetupTime = 0x01
ATT.FMC_WaitSetupTime = 0x03
ATT.FMC_HoldSetupTime = 0x02
ATT.FMC_HiZSetupTime = 0x01
Bank = FMC_Bank_NAND
MemoryDataWidth = FMC_MemoryDataWidth_16b
ECC = FMC_ECC_Enable
ECCPageSize = FMC_ECCPageSize_512Bytes
•
•
•
TCLRSetupTime = 0
TARSetupTime = 0
Capacitive load C
L
= 30 pF
In all timing tables, T fmc_ker_ck
is the kernel clock period.
-
3
2
-
-
-
-
1.5
-
-
1.5
2
-
2
Max
Unit ns page 117/199
DS13196 - Rev 6
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NWE
FMC_NOE (NRE)
FMC_D[15:0]
Figure 34. NAND controller waveforms for read access
STM32H7B0xB
Operating conditions td(ALE-NOE) tsu(D-NOE) th(NOE-D) th(NOE-ALE)
Figure 35. NAND controller waveforms for write access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NWE
FMC_NOE (NRE)
FMC_D[15:0] tv(NWE-D) td(ALE-NWE) th(NWE-D) th(NWE-ALE) page 118/199
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16)
FMC_NWE
FMC_NOE
STM32H7B0xB
Operating conditions
Figure 36. NAND controller waveforms for common memory read access td(ALE-NOE) tw(NOE) tsu(D-NOE) th(NOE-D) th(NOE-ALE)
FMC_D[15:0]
Figure 37. NAND controller waveforms for common memory write access
FMC_NCEx
ALE (FMC_A17)
CLE (FMC_A16) td(ALE-NOE)
FMC_NWE
FMC_NOE tw(NWE) th(NOE-ALE) td(D-NWE) tv(NWE-D) th(NWE-D)
FMC_D[15:0]
DS13196 - Rev 6
Table 81. Switching characteristics for NAND Flash memory read cycles
Symbol t w(N0E) t su(D-NOE) t h(NOE-D) t d(ALE-NOE) t h(NOE-ALE)
Parameter
FMC_NOE low width
FMC_D[15-0] valid data before FMC_NOE high
FMC_D[15-0] valid data after FMC_NOE high
FMC_ALE valid before FMC_NOE low
FMC_NWE high to FMC_ALE invalid
1. Guaranteed by characterization results.
Min
4T fmc_ker_ck
– 0.5
8
0
-
4T fmc_ker_ck
–1
Max
4T fmc_ker_ck
+0.5
-
-
3T fmc_ker_ck
+0.5
-
Unit ns page 119/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Table 82. Switching characteristics for NAND Flash write cycles
Symbol t w(NWE) t v(NWE-D) t h(NWE-D) t d(D-NWE) t d(ALE-NWE) t h(NWE-ALE)
Parameter
FMC_NWE low width
FMC_NWE low to FMC_D[15-0] valid
FMC_NWE high to FMC_D[15-0] invalid
FMC_D[15-0] valid before FMC_NWE high
FMC_ALE valid before FMC_NWE low
FMC_NWE high to FMC_ALE invalid
1. Guaranteed by characterization results.
Min
4T fmc_ker_ck
– 0.5
0
2T fmc_ker_ck
+ 1.5
5T fmc_ker_ck
– 2
-
2T fmc_ker_ck
+ 0.5
Max
4T fmc_ker_ck
+0.5
-
-
-
3T fmc_ker_ck
+0.5
-
SDRAM waveforms and timings
In all timing tables, T fmc_ker_ck
is the kernel clock period, with the following FMC_SDCLK maximum values:
•
•
•
For 2.7 V < V
DD
<3.6 V: FMC_CLK =110 MHz at 20 pF
For 1.8 V < V
DD
<1.9 V: FMC_CLK =100 MHz at 20 pF
For 1.62 V <
DD
<1.8 V, FMC_CLK =100 MHz at 15 pF
Unit ns
Figure 38. SDRAM read access waveforms (CL = 1)
FMC_SDCLK td(SDCLKL_AddR)
FMC_A[12:0] Row n td(SDCLKL_AddC) th(SDCLKL_AddR)
Col1 Col2 Coli th(SDCLKL_AddC) td(SDCLKL_SNDE)
Coln th(SDCLKL_SNDE)
FMC_SDNE[1:0] td(SDCLKL_NRAS)
FMC_SDNRAS th(SDCLKL_NRAS) td(SDCLKL_NCAS) th(SDCLKL_NCAS)
FMC_SDNCAS
FMC_SDNWE
FMC_D[31:0] tsu(SDCLKH_Data)
Data1 th(SDCLKH_Data)
Data2 Datai Datan page 120/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol t w(SDCLK) t su(SDCLKH _Data) t h(SDCLKH_Data) t d(SDCLKL_Add) t d(SDCLKL- SDNE) t h(SDCLKL_SDNE) t d(SDCLKL_SDNRAS) t h(SDCLKL_SDNRAS) t d(SDCLKL_SDNCAS) t h(SDCLKL_SDNCAS)
Parameter
FMC_SDCLK period
Data input setup time
Data input hold time
Address valid time
Chip select valid time
Chip select hold time
SDNRAS valid time
SDNRAS hold time
SDNCAS valid time
SDNCAS hold time
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
Table 83. SDRAM read timings
Min
2T fmc_ker_ck
– 1
3
0
-
-
0.5
-
0.5
-
0
Table 84. LPSDRAM read timings
Symbol t
W(SDCLK) t su(SDCLKH_Data) t h(SDCLKH_Data) t d(SDCLKL_Add) t d(SDCLKL_SDNE) t h(SDCLKL_SDNE) t d(SDCLKL_SDNRAS t h(SDCLKL_SDNRAS) t d(SDCLKL_SDNCAS) t h(SDCLKL_SDNCAS)
Parameter
FMC_SDCLK period
Data input setup time
Data input hold time
Address valid time
Chip select valid time
Chip select hold time
SDNRAS valid time
SDNRAS hold time
SDNCAS valid time
SDNCAS hold time
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
2T fmc_ker_ck
– 1
3
0.5
-
-
0
-
0
-
0
2T fmc_ker_ck
+0.5
-
-
1.5
2
-
2
-
0.5
-
Unit ns
Max
2T fmc_ker_ck
+0.5
-
-
3.5
2.5
-
1
-
1.5
-
Unit ns page 121/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 39. SDRAM write access waveforms
FMC_SDCLK td(SDCLKL_AddR)
FMC_A[12:0]
FMC_SDNE[1:0] td(SDCLKL_NRAS)
FMC_SDNRAS
FMC_SDNCAS
FMC_SDNWE td(SDCLKL_Data)
FMC_D[31:0] td(SDCLKL_NBL)
FMC_NBL[3:0]
Row n td(SDCLKL_AddC) th(SDCLKL_AddR)
Col1 Col2 Coli th(SDCLKL_AddC) td(SDCLKL_SNDE)
Coln th(SDCLKL_SNDE) th(SDCLKL_NRAS) td(SDCLKL_NCAS) td(SDCLKL_NWE)
Data1 Data2 Datai th(SDCLKL_Data)
Datan th(SDCLKL_NCAS) th(SDCLKL_NWE)
Table 85. SDRAM Write timings
Symbol t w(SDCLK) t d(SDCLKL _Data
) t h(SDCLKL _Data) t d(SDCLKL_Add) t d(SDCLKL_SDNWE) t h(SDCLKL_SDNWE) t d(SDCLKL_ SDNE) t h(SDCLKL-_SDNE) t d(SDCLKL_SDNRAS) t h(SDCLKL_SDNRAS) t d(SDCLKL_SDNCAS) t d(SDCLKL_SDNCAS)
Parameter
FMC_SDCLK period
Data output valid time
Data output hold time
Address valid time
SDNWE valid time
SDNWE hold time
Chip select valid time
Chip select hold time
SDNRAS valid time
SDNRAS hold time
SDNCAS valid time
SDNCAS hold time
1. Guaranteed by characterization results.
Min
2T fmc_ker_ck
– 1
-
0
-
-
0.5
-
0.5
-
0.5
-
0.5
2T fmc_ker_ck
+0.5
2.5
-
2
2.5
-
2
-
1.5
-
1.5
-
Unit ns page 122/199
6.3.19
Note:
STM32H7B0xB
Operating conditions
2. At VOS1, these values are degraded by up to 5 %.
Table 86. LPSDR SDRAM Write timings
Symbol t w(SDCLK) t d(SDCLKL _Data
) t h(SDCLKL _Data) t d(SDCLKL_Add) t d(SDCLKL-SDNWE) t h(SDCLKL-SDNWE) t d(SDCLKL- SDNE) t h(SDCLKL- SDNE) t d(SDCLKL-SDNRAS) t h(SDCLKL-SDNRAS) t d(SDCLKL-SDNCAS) t d(SDCLKL-SDNCAS)
Parameter
FMC_SDCLK period
Data output valid time
Data output hold time
Address valid time
SDNWE valid time
SDNWE hold time
Chip select valid time
Chip select hold time
SDNRAS valid time
SDNRAS hold time
SDNCAS valid time
SDNCAS hold time
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
Min
2T fmc_ker_ck
– 1
-
0
-
0
-
0
-
0
-
0
-
Max
2T fmc_ker_ck
+0.5
2.5
-
2.5
-
2
-
2
-
3
-
3
•
•
•
•
•
Octo-SPI interface characteristics
Unless otherwise specified, the parameters given in
Table 87. OCTOSPI characteristics in SDR mode
and
are derived from tests performed under the ambient temperature, f
HCLK
frequency and V
DD
supply voltage
summarized in Table 20. General operating conditions , with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Measurement points are done at CMOS levels: 0.5V
DD
I/O compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics.
Unit ns
Delay block bypassed.
Symbol Parameter
F
(CLK)
OCTOSPI clock frequency t w(CLKH) t w(CLKL)
OCTOSPI clock high and low time
Table 87. OCTOSPI characteristics in SDR mode
Conditions
1.62 V < V
DD
< 3.6 V, VOS0,
C
LOAD
= 15 pF
1.62 V < V
DD
< 3.6 V, VOS0,
C
LOAD
= 20 pF
2.7 V < V
DD
< 3.6 V, VOS0,
C
LOAD
= 20 pF
PRESCALER[7:0] = n = 0,1,3,5
Min
-
-
t
(CLK)
/2 t
(CLK)
/2−1
-
90
Unit
-
-
-
80
140 t
(CLK)
/2+1 t
(CLK)
/2
MHz ns
DS13196 - Rev 6 page 123/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Symbol Parameter Conditions Min
t t w(CLKH) w(CLKL)
OCTOSPI clock high and low time
PRESCALER[7:0] = n = 2,4,6,8
(n/2)*t
(CLK)
/
(n+1)
(n/2+1)*t
(CLK)
/
(n+1) −1 t t s(IN)
t v(OUT) t h(OUT)
Data input setup time
Data input hold time
Data output valid time
Data output hold time
2.7 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
2.7 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
-
-
2
2
4.5
5
-
0
1. All values apply to Octal and Quad-SPI mode.
2. Guaranteed by characterization results.
3. At VOS1, these values are degraded by up to 5 %.
4. Using PC2, PC3 PI11, PF0 or PF1 I/O in the data bus adds 3.5 ns to this timing value.
-
-
-
-
1
-
-
-
(n/2)*t
(CLK)
/
(n+1)+1
(n/2+1)*t
(CLK)
/
(n+1)
-
-
-
-
1.5
-
Unit ns t r(CLK)
Figure 40. OctoSPI timing diagram - SDR mode t
(CLK) t w(CLKH) t w(CLKL) t f(CLK)
Clock
Data output t v(OUT)
D0 t h(OUT)
D2
Data input
D0 t s(IN)
D1 t h(IN)
D1 D2
Symbol
F
(CLK)
t w(CLKH) t w(CLKL) t w(CLKH) t w(CLKL) t v(CLK) t h(CLK)
Table 88. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus
Parameter
OCTOSPI clock frequency
Conditions
1.71 V < V
C
DD
< 3.6 V, VOS0,
LOAD
= 15 pF
2.7 V < V
DD
< 3.6 V, VOS0,
C
LOAD
= 20 pF
1.62 V < V
C
DD
< 2.5 V, VOS0,
LOAD
= 20 pF
Min
-
-
-
-
-
-
120
100
100/45
OCTOSPI clock high and low time
OCTOSPI clock high and low time
Clock valid time
Clock hold time
PRESCALER[7:0] = n = 0,1,3,5
PRESCALER[7:0] = n = 2,4,6,8
-
t
(CLK)
/2 t
(CLK)
/2−1
(n/2)*t
(CLK)
/
(n+1)
(n/2+1)*t
(CLK)
/
(n+1)−1
t
(CLK)
/2−0.5
t
(CLK)
/2
-
-
-
-
-
t
(CLK)
/2+1 t
(CLK)
/2
(n/2)*t
(CLK)
/
(n+1)+1
(n/2+1)*t
(CLK)
/
(n+1) t
(CLK)
+1
-
Unit
MHz ns page 124/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions t
Symbol t t t w(CS) t v(DQ) v(DS) h(DS) v(RWDS)
Parameter
Chip select high time
Data input vallid time
Data strobe input valid time
Data strobe input hold time
Data strobe output valid time
Conditions
-
-
-
-
-
Min
0
0
0
-
3 x t
(CLK)
-
-
-
-
-
t t sr(DQ) t sf(DQ)
t hr(DQ) t t hf(DQ)
vr(OUT) vf(OUT)
Data input setup time
Data input hold time
Data output valid time
-
Rising edge
Falling edge
DHQC = 0
DHQC = 1, PRESCALER[7:0]=1,2...
−1
3
3.5
-
t t hr(OUT) hf(OUT)
Data output hold time
DHQC = 0
DHQC = 1, PRESCALER[7:0]=1,2...
4.5
t
(CLK)
/4
1. Guaranteed by characterization results, unless otherwise specified.
2. At VOS1, these values are degraded by up to 5 %.
3. The maximum frequency values are given for a maximum RWDS to DQ skew ≤ ±1.0 ns.
4. DHQC must be set to reach the mentioned frequency.
5. Guaranteed by design.
6. Using PC2, PC3, PI11, PF0 or PF1 I/Os limits the maximum clock frequency.
7. Delay block bypassed.
8. Using PC2, PC3, PI11, PF0 or PF1 I/O in the data bus adds 3.5 ns to this timing value.
-
-
-
5.5
t
(CLK)
/4+
1
-
-
3 x t
-
-
-
-
-
(CLK)
-
-
7
t
(CLK)
/4+2
-
-
Unit ns t r(CLK)
Figure 41. OctoSPI timing diagram - DTR mode t
(CLK) t w(CLKH) t w(CLKL) t f(CLK)
Clock
Data output
Data input t vf(OUT) t hr(OUT)
D0
D0
D1 t sf(IN) t hf(IN)
D1
D2 t vr(OUT) t hf(OUT)
D2
D3
D3
D4 t sr(IN) t hr(IN)
D4
D5
D5 page 125/199
STM32H7B0xB
Operating conditions
NCLK
CLK t r(CLK) t f(NCLK)
Figure 42. OctoSPI Hyperbus clock t
(CLK) t
(NCLK) t w(CLKH) t w(CLKL) t w(NCLKL) t w(NCLKH) t f(CLK) t r(NCLK)
V
OD(CLK)
6.3.20
Figure 43. OctoSPI Hyperbus read t w(CS)
NCS t v(CLK) t h(CLK)
CLK, NCLK t v(RWDS) t v(DS) t h(DS)
RWDS
DQ[7:0] t v(OUT) t h(OUT)
47:40 39:32 31:24 23:16 15:8 7:0
Latency count
Command address
Host drives DQ[7:0] and the memory drives RWDS.
t v(DQ) t s(DQ) t h(DQ)
Dn
A
Dn
B
Dn+1
A
Dn+1
B
Memory drives DQ[7:0] and RWDS.
Figure 44. OctoSPI Hyperbus write t w(CS)
NCS
Read write recovery t v(CLK)
Access latency t h(CLK)
CLK, NCLK
RWDS
DQ[7:0] t v(RWDS) High = 2x latency count
Low = 1x latency count
Latency count t v(OUT) t h(OUT)
47:40 39:32 31:24 23:16 15:8 7:0
Command address
Host drives DQ[7:0] and the memory drives RWDS.
t v(OUT) t h(OUT) t v(OUT) t h(OUT)
Dn
A
Dn
B
Dn+1
A
Dn+1
B
Host drives DQ[7:0] and RWDS.
Delay block (DLYB) characteristics
Unless otherwise specified, the parameters given in
Table 89. Delay Block characteristics for Delay Block are
derived from tests performed under the ambient temperature, f rcc_cpu_ck
frequency and VDD supply voltage
summarized in Table 20. General operating conditions , with the following configuration:
DS13196 - Rev 6 page 126/199
STM32H7B0xB
Operating conditions
6.3.21
Symbol t init t
∆
Parameter
Initial delay
Unit Delay
Table 89. Delay Block characteristics
Conditions
-
-
Min
1400
40
Typ
1700
47
Max
2700
59
Unit ps
16-bit ADC characteristics
Unless otherwise specified, the parameters given in
are derived from tests performed under the ambient temperature, f
PCLK2 frequency and V
DDA
supply voltage conditions summarized
in Table 20. General operating conditions
.
Symbol
V
DDA
V
REF+
V
REF-
f
ADC f
S
Table 90. ADC characteristics
Parameter
Analog power supply for ADC ON
Conditions
-
Positive reference voltage
V
DDA
≥ 2 V
V
DDA
< 2 V
Negative reference voltage
-
ADC clock frequency
Sampling rate for
Direct channels
Sampling rate for Fast channels
1,62 V ≤V
DDA
≤ 3.6 V
BOOST =
11
BOOST =
10
BOOST =
01
BOOST =
00
Resolution = 16 bits,
V
DDA
> 2.5 V
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 10 bits
Resolution = 8 bits
Resolution = 16 bits, V
DDA
>2.5V
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 10 bits
T
T
J
J
=
90 °C
=
125 °C
T
J
= 90 °C
TJ =
125°C f
ADC
= 36 MHz SMP = 1.5
f
ADC
= 37 MHz SMP = 2.5
f
ADC
= 50 MHz SMP = 2.5
f f f f f f f f
ADC
ADC
ADC
ADC
ADC
ADC
ADC
ADC
=50 MHz
=50 MHz
=50 MHz
=32 MHz
=31 MHz
=33 MHz
=39 MHz
=48 MHz
SMP = 2.5
SMP=1.5
SMP=1.5
SMP=2.5
SMP=2.5
SMP=2.5
SMP=2.5
SMP=2.5
Min
1.62
1.62
-
-
V
DDA
V
SSA
3.6
V
DDA
0.12
0.12
0.12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
25
12.5
6.25
3.60
3.35
5.00
5.50
7.10
8.30
2.90
2.80
3.30
4.30
6.00
Unit
V
MHz
MSPS
DS13196 - Rev 6 page 127/199
STM32H7B0xB
Operating conditions
I t
V f
S
TRIG
AIN
CMIV
AIN
C
ADC t
ADCVREG_
STUP t
STAB
ADC LDO startup time t t
Symbol
V
R t
CAL
OFF_CAL t
LATR
LATRINJ t t
S
CONV
DDA_D(ADC)
Parameter
Sampling rate for Fast channels
Sampling rate for
Slow channels,
BOOST = 00, f
ADC
10 MHz
=
External trigger period
Conversion voltage range
Common mode input voltage
Resolution = 8 bits
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 10 bits
Resolution = 8 bits
TJ =
125°C
T
J
= 90 °C
T
J
Conditions
=
125 °C f f
ADC
ADC
=50 MHz SMP=2.5
=10 MHz SMP=1.5
Resolution = 16 bits
-
-
External input impedance
Resolution = 16 bits, T
J
= 125 °C
Resolution = 14 bits, T
J
= 125 °C
Resolution = 12 bits, TJ
J
= 125 °C
Resolution = 10 bits, T
J
= 125 °C
Resolution = 8 bits, T
J
= 125 °C
Internal sample and hold capacitor
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
7.10
1.00
10
-
0 V
REF+
V
REF
/2
− 10%
-
-
-
-
-
V
REF
/
2
-
-
-
-
-
V
REF
/2
+ 10%
170
435
1150
5650
26500
ADC power-up time
Offset and linearity calibration time
Offset calibration time
Trigger conversion latency for regular and injected channels without aborting the conversion
Trigger conversion latency for regular and injected channels when a regular conversion is aborted
Sampling time
Total conversion time
(including sampling time)
ADC consumption on
V
DDA
, BOOST=11,
Differential mode
-
LDO already started
-
-
CKMODE = 00
CKMODE = 01
CKMODE = 10
CKMODE = 11
CKMODE = 00
CKMODE = 01
CKMODE = 10
CKMODE = 11
-
N-bits resolution
Resolution = 16 bits, f
Resolution = 14 bits, f
Resolution = 12 bits, f
ADC
ADC
ADC
=25 MHz
=30 MHz
=40 MHz
-
1
1.5
tS +
0.5 +
N/2
-
1.5
-
-
-
2.5
-
-
-
-
-
5
-
165010
10
1280
2
-
-
-
3
-
-
-
-
2.5
2.5
2.5
2.25
3.5
3.5
3.5
3.25
810.5
-
1440
1350
990
-
-
-
-
-
Unit
MSPS
1/f
ADC
V
µs conversion cycle
1/f
V
Ω pF
ADC
µA
DS13196 - Rev 6 page 128/199
STM32H7B0xB
Operating conditions
I
I
Symbol
DDA_D(ADC)
DDA_SE(ADC)
I
DD(ADC)
Single-ended mode
ADC consumption on
V
Parameter
ADC consumption on
V
DDA
, BOOST=10,
Differential mode f
ADC
=25 MHz
ADC consumption on
V
DDA
, BOOST=01,
Differential mode f
ADC
=12.5 MHz
ADC consumption on
V
DDA
, BOOST=00,
Differential mode f
ADC
=6.25 MHz
ADC consumption on
V
DDA
, BOOST=11,
Single-ended mode
ADC consumption on
V
DDA f
ADC
DDA
, BOOST=10,
=25 MHz
, BOOST=01,
Single-ended mode f
ADC
=12.5 MHz
ADC consumption on
V
DDA
, BOOST=00,
Single-ended mode f
ADC
=6.25 MHz
ADC consumption on
V
DD
Conditions
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 16 bits, f
ADC
=25 MHz
Resolution = 14 bits, f
ADC
=30 MHz
Resolution = 12 bits, f
ADC
=40 MHz
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits
Resolution = 16 bits
Resolution = 14 bits
Resolution = 12 bits f
ADC
=50 MHz f
ADC
=25 MHz f
ADC
=12.5 MHz f
ADC
=6.25 MHz f
ADC
=3.125 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1. Guaranteed by design.
2. Depending on the package, V
REF+
can be internally connected to V
DDA
and V
REF-
to V
SSA
.
3. These values are valid UFBGA176+25 and one ADC. The values for other packages and multiple ADCs might be different
4. The voltage booster on ADC switches must be used for V
DDA
< 2.4 V (embedded I/O switches).
5. The tolerance is 10 LSBs for 16-bit resolution, 4 LSBs for 14-bit resolution, and 2 LSBs for 12-bit, 10-bit and
8-bit resolutions.
Min
-
-
-
-
-
-
-
-
-
-
1080
810
585
630
432
315
360
270
225
720 -
-
-
-
-
-
-
-
-
-
675
495
540
405
292.5
315
216
157.5
180
135
112.5
400
220
180
120
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Table 91. Minimum sampling time vs R
AIN
Data valid up to 130 °C, with a 47 pF PCB capacitor and V
DDA
=1.6 V.
Minimum sampling time (s)
Resolution RAIN (Ω)
Fast channels
16 bits
14 bits
47
47
68
100
7.37E-08
6.29E-08
6.84E-08
7.80E-08
1.14E-07
9.74E-08
1.02E-07
1.12E-07
Unit
µA
µA
1.72E-07
1.55E-07
1.58E-07
1.62E-07
DS13196 - Rev 6 page 129/199
STM32H7B0xB
Operating conditions
Resolution RAIN (Ω)
14 bits
12 bits
10 bits
8 bits
680
1000
1500
2200
3300
100
150
220
330
470
330
470
680
47
68
150
220
47
68
100
150
220
330
470
680
1000
1500
2200
3300
4700
6800
10000
15000
47
68
100
150
220
9.86E-08
1.32E-07
5.32E-08
5.74E-08
6.58E-08
8.37E-08
1.11E-07
1.56E-07
2.16E-07
3.01E-07
4.34E-08
4.68E-08
5.35E-08
6.68E-08
8.80E-08
1.24E-07
1.69E-07
2.38E-07
3.45E-07
5.15E-07
7.42E-07
1.10E-06
3.32E-08
3.59E-08
4.10E-08
5.06E-08
6.61E-08
9.17E-08
1.24E-07
1.74E-07
2.53E-07
3.73E-07
5.39E-07
8.02E-07
1.13E-06
1.62E-06
2.36E-06
3.50E-06
1. Guaranteed by design.
2. Direct channels are connected to analog I/Os (PA0_C, PA1_C, PC2_C and PC3_C) to optimize ADC performance.
2.60E-07
3.66E-07
5.35E-07
7.75E-07
1.14E-06
5.10E-08
5.35E-08
5.83E-08
6.76E-08
8.22E-08
1.08E-07
1.40E-07
1.91E-07
2.70E-07
3.93E-07
5.67E-07
8.36E-07
1.18E-06
1.69E-06
2.47E-06
3.69E-06
Minimum sampling time (s)
Fast channels
1.32E-07
1.61E-07
8.00E-08
8.50E-08
9.31E-08
1.10E-07
1.34E-07
1.78E-07
2.39E-07
3.29E-07
6.51E-08
6.89E-08
7.55E-08
8.77E-08
1.08E-07
1.43E-07
1.89E-07
2.80E-07
3.84E-07
5.48E-07
7.78E-07
1.14E-06
8.61E-08
8.83E-08
9.22E-08
9.95E-08
1.11E-07
1.32E-07
1.63E-07
2.12E-07
2.85E-07
4.05E-07
5.75E-07
8.38E-07
1.18E-06
1.68E-06
2.45E-06
3.65E-06
1.80E-07
2.01E-07
1.29E-07
1.32E-07
1.40E-07
1.51E-07
1.73E-07
2.14E-07
2.68E-07
3.54E-07
1.08E-07
1.11E-07
1.16E-07
1.26E-07
1.40E-07
1.71E-07
2.13E-07
DS13196 - Rev 6 page 130/199
STM32H7B0xB
Operating conditions
3. Fast channels correspond for ADCx_INPx to PA6, PB1, PC4, PF11, PF13 and for ADCx_INNx to PA7, PB0,
PC5, PF12, PF14
4. Slow channels correspond to all ADC inputs except for the Direct and Fast channels.
Figure 45. ADC conversion timing diagram
CLK
Mux Sampling (1)
1/2 SMP
15 14 13 12 11 10 9 8 7 6
Number of CLK clock cycles = ADC resolution / 2
5
Total conversion time: 0.5 +Tsamp + N/2
4 3 2 1 0
1. The sampling time defines the minimum sampling clock cycles (SMP) to be programmed in the ADC (refer to the product reference manual for details).
Table 92. ADC accuracy
Data guaranteed by characterization for BGA packages. The values for LQFP packages might differ. ADC DC accuracy values are measured after internal calibration.
Symbol Parameter
Min Typ Max Unit
ET
EO
EG
ED
EL
ENOB
SINAD
SNR
THD
Total undadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
Effective number of bits
Signal-to-noise and distortion ratio
Signal-to-noise ratio
Total harmonic distortion
Direct channel
Fast channel
Slow channel
Single ended
Differential
Single ended
Differential
Single ended
Differential
-
-
Single ended
Differential
Direct channel
Fast channel
Slow channel
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
Differential
Single ended
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
LSB
Bits dB
±15
+3/–1
+4.5/–1
±11
±7
±13
±7
±10
±6
+10/–20
±15
+10/–20
±15
±10
±10
±10
12.2
13.2
75.2
81.2
77.0
81.0
87
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS13196 - Rev 6 page 131/199
STM32H7B0xB
Operating conditions
Symbol
THD
Parameter
Total harmonic distortion
Differential
1. ADC clock frequency = 25 MHz, ADC resolution = 16 bits, V
DDA
=V
REF+
=3.3 V and BOOST=11.
Note:
Min
-
Typ
90
Max Unit
dB
ADC accuracy vs. negative injection current: injecting a negative current on any analog input pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog input.
It is recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for I
INJ(PIN)
and ΣI
INJ(PIN)
does not affect the ADC accuracy.
in
Output code
2 n -1
2 n -2
2 n -3
5
4
3
2
1
7
6
0
V
SSA
E
O
Figure 46. ADC accuracy characteristics
[1LSB =
V
REF+
2 n
V
DDA
(or )]
2 n
E
G
E
T
E
L
E
D
1 LSB ideal
(2)
(3)
(1)
(1) Example of an actual transfer curve
(2) Ideal transfer curve
(3) End-point correlation line n = ADC resolution
E
T
= total unadjusted error: maximum deviation between the actual and ideal transfer curves
E
O
= offset error: maximum deviation between the first actual transition and the first ideal one
E
G
= gain error: deviation between the last ideal transition and the last actual one
E
D
= differential linearity error: maximum deviation between actual steps and the ideal one
E
L
= integral linearity error: maximum deviation between any actual transition and the end point correlation line
V
REF+
(V
DDA
)
1.
Example of an actual transfer curve.
2.
Ideal transfer curve.
3.
End point correlation line.
4.
E
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
5.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
6.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
7.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
8.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line.
DS13196 - Rev 6 page 132/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
Figure 47. Typical connection diagram using the ADC
V
AIN
R
AIN
(1)
C
AINx parasitic
V
DD
V
T
0.6 V
V
T
0.6 V
I
L
± 250 nA
Sample and hold ADC converter
R
ADC
(1)
ADC converter
STM32
C
ADC
(1)
1.
Refer to Table 90. ADC characteristics for the values of R
AIN
, R
ADC
and C
ADC
.
2.
C parasitic
represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 5 pF). A high C parasitic
value downgrades conversion accuracy. To remedy this, f
ADC
should be reduced.
General PCB design guidelines
depending on whether V
REF+
or
Figure 49. Power supply and reference decoupling (V
is connected to V
DDA
or not. The 100 nF capacitors should be ceramic (good
quality). They should be placed them as close as possible to the chip.
Figure 48. Power supply and reference decoupling (V
REF+ not connected to V
DDA
)
STM32
V
REF+
(1)
1 µF // 100 nF
1 µF // 100 nF
V
DDA
V
SSA
/V
REF-
(1) page 133/199
STM32H7B0xB
Operating conditions
1.
V
REF+
input is not available on all package (refer to Table 1. STM32H7B0xB features and peripheral counts
) whereas V
REF– is available only on UFBGA176+25, TFBGA225 with SMPS and TFBGA216. When V
REF- is not available, it is internally connected to V
SSA
.
Figure 49. Power supply and reference decoupling (V
REF+ connected to V
DDA
)
STM32
V
REF+
/V
DDA
(1)
1 µF // 100 nF
V
REF-
/V
SSA
(1)
6.3.22
1.
V
REF+
input is not available on all package (refer to Table 1. STM32H7B0xB features and peripheral counts
) whereas V
REF– is available only on UFBGA176+25, TFBGA225 with SMPS and TFBGA216. When V
REF- is not available, it is internally connected to V
SSA
.
DAC characteristics
Symbol
V
DDA
V
REF+
V
REF-
R
L
R
O
R
BON
R
BOFF
C
L
C
SH
Parameter
Analog supply voltage
Positive reference voltage
Negative reference voltage
Resistive Load
Output Impedance
Output impedance sample and hold mode, output buffer ON
Output impedance sample and hold mode, output buffer OFF
Capacitive Load
Table 93. DAC characteristics
Conditions
-
-
-
DAC output buffer ON connected to V
SSA connected to V
DDA
DAC output buffer OFF
DAC output buffer ON
DAC output buffer OFF
V
DD
= 2.7 V
V
DD
= 2.0 V
V
DD
= 2.7 V
V
DD
= 2.0 V
DAC output buffer OFF
Sample and Hold mode
10.3
-
-
-
-
-
-
Min
1.8
1.80
-
5
25 -
13
-
-
-
3.3
-
V
SSA
-
-
-
0.1
Max
3.6
V
DDA
-
-
-
16
1.6
2.6
17.8
18.7
50
1
Unit
V kΩ kΩ kΩ pF
µF
DS13196 - Rev 6 page 134/199
STM32H7B0xB
Operating conditions
Symbol Parameter Conditions Min
DAC output buffer ON
V
DAC_OUT
Voltage on DAC_OUT output t
I
SETTLING
Settling time (full scale: for a 12-bit code transition between the lowest and the highest input codes when
DAC_OUT reaches the final value of ±0.5LSB, ±1LSB, ±2LSB, ±4LSB,
C
L
±8LSB) t
WAKEUP
Wakeup time from off state (setting the
ENx bit in the DAC Control register) until the final value of ±1LSB is reached
PSRR t
V
I
SAMP leak
C
Iint t
TRIM offset
DDA(DAC)
DC V
DDA
supply rejection ratio
Sampling time in Sample and Hold mode
=100 nF
(code transition between the lowest input code and the highest input code when DAC_OUT reaches the ±1LSB final value)
Output leakage current
Internal sample and hold capacitor
Middle code offset trim time
Middle code offset for 1 trim code step
DAC quiescent consumption from V
DDA
DAC output buffer OFF
C
Normal mode, DAC
L output buffer ON,
≤ 50 pF, R
L
≥ 5 kΩ
±0.5 LSB
±1 LSB
±2 LSB
±4 LSB
±8 LSB
Normal mode, DAC output buffer OFF, ±1LSB
C
L
=10 pF
Normal mode, DAC output buffer ON,
C
L
≤ 50 pF, R
L
= 5 kΩ
Normal mode, DAC output buffer OFF,
C
L
≤ 10 pF
Normal mode, DAC output buffer ON,
C
L
≤ 50 pF, R
L
= 5 kΩ
MODE<2:0>_V12=100/101
(BUFFER ON)
MODE<2:0>_V12=110
(BUFFER OFF)
MODE<2:0>_V12=111
(INTERNAL BUFFER OFF)
-
-
Minimum time to verify the each code
V
REF+
= 3.6 V
V
REF+
= 1.8 V
DAC output buffer ON
DAC output buffer OFF
No load, middle code
(0x800)
No load, worst code
(0xF1C)
No load, middle/worst code (0x800)
0.2
-
-
-
-
-
-
-
-
-
-
-
1.8
50
-
-
0
-
-
-
-
-
Sample and Hold mode, C
SH
=100 nF
I
DDV(DAC)
DAC consumption from V
REF+
1. Guaranteed by design, unless otherwise specified.
DAC output buffer ON
DAC output buffer OFF
No load, middle code
(0x800)
No load, worst code
(0xF1C)
No load, middle/worst code (0x800)
Sample and Hold mode, Buffer ON, C
SH
=100 nF
(worst code)
Sample and Hold mode, Buffer OFF,
C
SH
=100 nF (worst code)
-
-
-
-
-
-
-
-
2.05
1.97
1.67
1.66
1.65
1.7
5
2
−80
0.7
11.5
0.3
-
2.2
-
850
425
360
490
20
360*T
ON
/
(T
ON
+T
OFF
)
170
170
160
170*T
ON
/
(T
ON
+T
OFF
)
160*T
ON
/
(T
ON
+T
OFF
)
Max
Unit
V
DDA
−0.2
V
REF+
-
-
-
-
-
V
µs
2
7.5
5
−28
2.6
18.7
0.6
2.6
-
-
-
-
-
-
-
-
-
-
-
-
µs dB ms
µs nA pF
µs
µV
µA
DS13196 - Rev 6 page 135/199
STM32H7B0xB
Operating conditions
2. In buffered mode, the output can overshoot above the final value for low input code (starting from the minimum value).
3. Refer to Table 63. I/O static characteristics .
4. T
ON
is the refresh phase duration, while T manual for more details.
OFF
is the hold phase duration. Refer to the product reference
Table 94. DAC accuracy
Symbol Parameter Conditions
DNL
INL
Offset
Offset1
OffsetCal
Gain
TUE
Offset error at code 0x800 after factory calibration
Total undajusted error
DAC output buffer ON
DAC output buffer OFF
DAC output buffer ON, C
L
≤ 50 pF, R
L
≥ 5 kΩ
DAC output buffer OFF, C
L
≤ 50 pF, no R
L
DAC output buffer ON, C
DAC output buffer ON, C
L
L
≤ 50 pF, R
≤ 50 pF, R
L
L
≥ 5 kΩ
≥ 5 kΩ
V
REF+
= 3.6 V
V
REF+
= 1.8 V
DAC output buffer OFF, C
L
≤ 50 pF, no R
L
DAC output buffer OFF, C
L
≤ 50 pF, no R
L
-
V
REF+
= 3.6 V
VR
EF+
= 1.8 V
DAC output buffer ON,C
L
≤ 50 pF, R
L
≥ 5 kΩ
DAC output buffer OFF, C
L
≤ 50 pF, no R
L
DAC output buffer ON,C
L
≤ 50 pF, R
L
≥ 5 kΩ
DAC output buffer OFF, C
L
≤ 50 pF, no R
L
TUECal
Total undajusted error after calibration
DAC output buffer ON C
L
≤ 50pF, R
L
≥ 5kΩ
SNR
THD
Signal-to-noise ratio
Total harmonic distorsion
SINAD Signal-to-noise and distorsion ratio
ENOB Effective number of bits
DAC output buffer ON C
L
≤ 50pF, R
L
≥ 5kΩ 1 kHz, BW 500KHz
DAC output buffer OFF C
L
≤ 50pF, no R
L
1kHz, BW 500KHz
DAC output buffer ON C
L
≤ 50pF, R
L
≥ 5kΩ, 1 kHz
DAC output buffer OFF C
L
≤ 50pF, no R
L
, 1 kHz
DAC output buffer ON C
L
≤ 50pF, R
L
≥ 5kΩ, 1 kHz
DAC output buffer OFF C
L
≤ 50pF, no R
L
, 1 kHz
DAC output buffer ON C
L
≤ 50pF, R
L
≥ 5kΩ, 1 kHz
DAC output buffer OFF C
L
≤ 50pF, no R
L
, 1 kHz
1. Guaranteed by design, unless otherwise specified.
2. Difference between two consecutive codes minus 1 LSB.
3. Difference between the value measured at Code i and the value measured at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between the ideal slope of the transfer function and the measured slope computed from code
0x000 and 0xFFF when the buffer is OFF, and from code giving 0.2 V and (V
REF+
− 0.2 V) when the buffer is ON.
6. Signal is −0.5dBFS with Fsampling = 1 MHz.
Unit
−2
−2
−4
−4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
67.8
67.8
−78,6
−78,6
67.5
67.5
10.9
10.9
2
2
4
4
±12
±25
±8
±1
±1
-
-
-
-
LSB
LSB
LSB
±5 LSB
±5
±7
±30
±12
±23
-
-
-
-
LSB
%
LSB
LSB dB dB dB dB
DS13196 - Rev 6 page 136/199
STM32H7B0xB
Operating conditions
Figure 50. 12-bit buffered /non-buffered DAC
Buffered/Non-buffered DAC
Buffer(1)
12-bit digital to analog converter
DAC_OUTx
R L
C L
6.3.23
1.
The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the DAC_CR register.
Voltage reference buffer characteristics
Symbol
V
DDA
TRIM
C
L esr
Parameter
Analog supply voltage
V
REFBUF_OUT
Voltage Reference Buffer
Output
Trim step resolution
Load capacitor
Equivalent Serial Resistor of
C
L
Table 95. VREFBUF characteristics
-
-
Conditions
Normal mode
Normal mode at 30°C,
I
LOAD
=100 µA
VSCALE = 000
VSCALE = 001
VSCALE = 010
VSCALE = 011
VSCALE = 000
VSCALE = 001
VSCALE = 010
VSCALE = 011
VSCALE = 000
VSCALE = 001
VSCALE = 010
VSCALE = 011
VSCALE = 000
VSCALE = 001
VSCALE = 010
VSCALE = 011
-
-
2.8
2.4
2.1
1.8
1.62
1.62
1.62
1.62
2,0460
1,8010
1,4995
VDDA− 150 mV
VDDA− 150 mV
VDDA− 150 mV
VDDA− 150 mV
-
0.5
-
-
3.3
-
-
-
-
-
2.5000
2.0490
1.8040
1.5015
-
-
-
-
±0.05
1
-
Max
3.6
3.6
3.6
3.6
2.80
2.40
2.10
1.80
2,0520
1,8060
1,5040
VDDA
VDDA
VDDA
VDDA
±0.1
1.50
2
Unit
V
% uF
Ω
DS13196 - Rev 6 page 137/199
STM32H7B0xB
Operating conditions
I
Symbol
I
I
LOAD line_reg
LOAD_reg
T coeff
Parameter
Static load current
Line regulation
Load regulation
Temperature coefficient
2.8 V ≤ V
500 µA ≤ I
−40 °C < T
-
DDA
J
Conditions
≤ 3.6 V
LOAD
≤ 4 mA
< +130 °C
-
I
LOAD
= 500 µA
I
LOAD
= 4 mA
Normal Mode
-
-
-
-
-
-
t
PSRR
START
Power supply rejection
Startup time
DC
100KHz
C
L
=0.5 µF
C
L
=1 µF
C
L
=1.5 µF
-
-
-
-
-
-
-
-
-
-
60
40
300
500
650
I
INRUSH
Control of maximum
DC current drive on
V
REFBUF_OUT
during startup
8
I
DDA(VREFBUF)
V
REFBUF
consumption from
V
DDA
I
LOAD
= 0 µA
I
LOAD
= 500 µA
I
LOAD
= 4 mA
-
-
-
-
-
-
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer cannot accurately maintain the output voltage (V
DDA
−drop voltage).
3. Guaranteed by tests in production.
4. To properly control VREFBUF I
INRUSH
current during the startup phase and the change of scaling, VDDA voltage should be in the range of 1.8 V-3.6 V, 2.1 V-3.6 V, 2.4 V-3.6 V and 2.8 V-3.6 V for VSCALE = 011,
010, 001 and 000, respectively.
15
16
32
-
200
100
50
-
Max
4
-
-
-
Tcoeff
VREFINT +
100
-
-
-
-
-
Unit mA ppm/V ppm/ mA ppm/ °C dB
µs
-
25
30
50 mA
µA
6.3.24
Analog temperature sensor characteristics
Table 96. Analog temperature sensor characteristics
Symbol
T
L
Avg_Slope
Parameter
V
SENSE
linearity with temperature (from V
SENSOR
voltage)
V
SENSE
linearity with temperature (from ADC counter)
Average slope (from V
SENSOR
voltage)
Average slope (from ADC counter)
Voltage at 30°C ± 5 °C
Min
-
-
-
-
V
30
t start_run
t
S_temp
I sens
I sensbuf
Startup time in Run mode (buffer startup)
ADC sampling time when reading the temperature
Sensor consumption
Sensor buffer consumption -
-
-
-
9
1. Guaranteed by design.
2. Guaranteed by characterization results.
3. Measured at V
DDA
= 3.3 V ± 10 mV. The V
30
ADC conversion result is stored in the TS_CAL1 byte.
Typ
-
-
2
2
0.62
-
-
0.18
3.8
Max
3
3
-
-
-
25.2
-
0.31
6.5
Unit
°C mV/°C
V
µs
µA
DS13196 - Rev 6 page 138/199
6.3.25
6.3.26
STM32H7B0xB
Operating conditions
Table 97. Analog temperature sensor calibration values
Symbol Parameter
TS_CAL1 Temperature sensor raw data acquired value at 30 °C, V
DDA
=3.3 V
TS_CAL2 Temperature sensor raw data acquired value at 130 °C, V
DDA
=3.3 V
Memory address
0x08FF F814 - 0x08FF F816
0x08FF F818 - 0x08FF F81A
Digital temperature sensor characteristics
Table 98. Digital temperature sensor characteristics
Symbol f
DTS
T
LC
Parameter
Output Clock frequency
Temperature linearity coefficient
Conditions
-
VOS2
500
1660
T
TOTAL_ERROR
T
VDD_CORE
Temperature offset measurement, all VOS
Additional error due to supply variation t
TRIM t
WAKE_UP
I
DDCORE_DTS
Calibration time
Wake-up time from off state until DTS ready bit is set
DTS consumption on V
CORE
1. Guaranteed by design, unless otherwise specified.
2. Guaranteed by characterization results.
T
J
=−40 °C to 30 °C −13
T
J
=30 °C to 130 °C −7
VOS2 0
VOS0, VOS1, VOS3 −1
-
-
-
8.5
Typ
-
-
-
-
4
2
0
1
°C
°C
2 ms
67 116.00
μs
30
750
2100
1150
2750
70.0
Unit kHz
Hz/°C
μA
Temperature and V
BAT
monitoring
Table 99. V
BAT
monitoring characteristics
Symbol Parameter
R
Q
t
S_vbat
V
BAThigh
V
BATlow
Resistor bridge for V
BAT
Ratio on V
BAT
measurement
Error on Q
ADC sampling time when reading V
High supply monitoring
Low supply monitoring
1. Guaranteed by design.
BAT input
Min
-
-
–10
9
-
-
Typ
26
4
-
-
3.55
1.36
Max
-
-
+10
-
-
-
Unit
KΩ
-
%
µs
V
Symbol
R
BC
Parameter
Table 100. V
BAT
charging characteristics
Battery charging resistor
Condition
VBRS in PWR_CR3= 0
VBRS in PWR_CR3= 1
Min
-
-
Typ
5
1.5
Max
-
-
Unit
KΩ
DS13196 - Rev 6 page 139/199
STM32H7B0xB
Operating conditions
6.3.27
Table 101. Temperature monitoring characteristics
Symbol
TEMP high
TEMP low
Parameter
High temperature monitoring
Low temperature monitoring
1. Guaranteed by design.
Min
-
-
117
– 25
Voltage booster for analog switch
-
-
Unit
°C
Symbol
V
DD t
SU(BOOST)
I
DD(BOOST)
Table 102. Voltage booster for analog switch characteristics
Parameter
Supply voltage
Booster startup time
Booster consumption
Condition
-
-
1.62 V ≤ V
DD
≤ 2.7 V
2.7 V < V
DD
< 3.6 V
Min
1.62
-
-
-
2.6
-
-
-
1. Guaranteed by characterization results.
Comparator characteristics
3.6
50
125
250
Unit
V
µs
µA
6.3.28
Symbol
V
DDA
V
IN
V
BG
V
SC
Parameter
Analog supply voltage
Comparator input voltage range
Scaler input voltage
Scaler offset voltage
I
DDA(SCALER)
Scaler static consumption from V
DDA t
START_SCALER
Scaler startup time t
START t
D
V offset
V hys
Propagation delay for 200 mV step with
100 mV overdrive
Propagation delay for step > 200 mV with
100 mV overdrive only on positive inputs
Comparator offset error
Comparator hysteresis
Table 103. COMP characteristics
Comparator startup time to reach propagation delay specification
Conditions
-
-
-
-
BRG_EN=0 (bridge disable)
BRG_EN=1 (bridge enable)
-
High-speed mode
Medium mode
Ultra-low-power mode
High-speed mode
Medium mode
Ultra-low-power mode
High-speed mode
Medium mode
Ultra-low-power mode
Full common mode range
No hysteresis
Low hysteresis
Medium hysteresis
High hysteresis
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
16
-
4
Unit
1.62
0
3.3
-
3.6
V
DDA
V
-
±5
0
10
20
30
0.5
2.5
50
0.5
2.5
2
5
15
50
±5 ±10 mV
0.2
0.8
0.3
1
µA
140 250 µs
5
20
80
80
µs ns
0.9
7
µs
120 ns
1.2
7
µs
±20 mV
-
22
37
52 mV
DS13196 - Rev 6 page 140/199
STM32H7B0xB
Operating conditions
Symbol
I
DDA
(COMP)
Parameter
Comparator consumption from V
DDA
1. Guaranteed by design, unless otherwise specified.
2. Refer to Section 6.3.6 Embedded reference voltage
.
3. Guaranteed by characterization results.
6.3.29
Operational amplifier characteristics
Conditions
Static
Ultra-low-power mode
With 50 kHz ±100 mV overdrive square signal
Medium mode
High-speed mode
Static
With 50 kHz ±100 mV overdrive square signal
Static
With 50 kHz ±100 mV overdrive square signal
Unit
400 600 nA
800 -
-
5
6
7
-
µA
-
70
75
100
-
Symbol
V
DDA
CMIR
VI
OFFSET
ΔVI
OFFSET
TRIMOFFSETP,
TRIMLPOFFSETP
TRIMOFFSETN,
TRIMLPOFFSETN
I
LOAD
I
LOAD_PGA
C
LOAD
CMRR
PSRR
GBW
SR
AO
φm
GM
V
OHSAT
Table 104. Operational amplifier characteristics
Parameter
Analog supply voltage Range
Common Mode Input Range
Input offset voltage
Conditions
-
-
25°C, no load on output
All voltages and temperature, no load
Input offset voltage drift
Offset trim step at low common input voltage
(0.1*V
DDA
)
Offset trim step at high common input voltage
(0.9*V
DDA
)
Drive current
Drive current in PGA mode
Capacitive load
Common mode rejection ratio
-
-
Power supply rejection ratio
Gain bandwidth for high supply range
Slew rate (from 10% and 90% of output voltage)
Open loop gain
Phase margin
Gain margin
High saturation voltage
-
-
-
-
C
LOAD
≤ 50pf / R
LOAD
≥ 4 kΩ
V com
=V
DDA
/2
200 mV ≤ Output dynamic range ≤ V
DDA
-
200 mV
Normal mode
High-speed mode
200 mV ≤ Output dynamic range ≤ V
DDA
-
200 mV
-
-
I load
=max or R
LOAD
=min,
Input at V
DDA
-
-
4
-
-
59
-
-
V
DDA
−100 mV
2
0
-
-
-
-
-
-
-
50
3.3
-
-
-
±3.0
3.6
V
DDA
±1.5
±2.5
-
Unit
V mV
μV/°C
1.1
1.1
7.3
3
24
90
55
12
-
-
-
-
80
66
1.5
1.5
500
270
50
-
mV
12.3
MHz
-
-
129
V/µs dB
-
° dB
mV
μA pF dB dB
DS13196 - Rev 6 page 141/199
STM32H7B0xB
Operating conditions t
Symbol
V
R
OLSAT
WAKEUP
PGA gain network
Parameter
Low saturation voltage
Wake up time from OFF state
Non inverting gain error value
Inverting gain error value
External non-inverting gain error value
R2/R1 internal resistance values in non-inverting PGA mode
R2/R1 internal resistance values in inverting PGA mode
Conditions
I load
=max or R
LOAD
=min, Input at 0 V
Normal mode
C
LOAD
≤ 50pf, R
LOAD
≥ 4 kΩ, follower configuration
High speed mode
C
LOAD
≤ 50pf, R
LOAD
≥ 4 kΩ, follower configuration
PGA gain = 2
PGA gain = 4
PGA gain = 8
PGA gain = 16
PGA gain = 2
PGA gain = 4
PGA gain = 8
PGA gain = 16
PGA gain = 2
PGA gain = 4
PGA gain = 8
PGA gain = 16
PGA Gain=2
PGA Gain=4
PGA Gain=8
PGA Gain=16
PGA Gain = -1
PGA Gain = -3
PGA Gain = -7
PGA Gain = -15
Delta R
Resistance variation (R1 or
R2)
-
PGA BW
PGA bandwidth for different non inverting gain
PGA bandwidth for different inverting gain
I en
DDA(OPAMP)
Voltage noise density
OPAMP consumption from
V
DDA at 1 KHz at 10 KHz
Normal mode
High-speed mode
1. Guaranteed by design, unless otherwise specified.
2. R
LOAD
is the resistive load connected to VSSA or to VDDA.
Gain=2
Gain=4
Gain=8
Gain=16
Gain = -1
Gain = -3
Gain = -7
Gain = -15 output loaded with 4 kΩ no Load, quiescent mode, follower
-
-
Unit
100 mV
0.8
3.2
µs
0.9
2.8
10/10
30/10
70/10
150/10
10/10
30/10
70/10
150/10
-
-
-
-
-
-
-
-
-
-
-
-
-
% kΩ/ kΩ
%
GBW/2
GBW/4
GBW/8
GBW/16
5.00
3.00
1.50
0.80
140
55
570
610
-
-
1000
-
-
-
-
-
-
-
-
MHz
MHz nV/√Hz
µA
1200
-
-
-
-
-
-
-
-
1
3
2
3
3.5
4
2.5
3
1
1
1
2
15
-
−15
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−2
−3
−1
−3
−3.5
−4
−1
−2
−2.5
−3
−1
−1
DS13196 - Rev 6 page 142/199
STM32H7B0xB
Operating conditions
3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1.
6.3.30
Digital filter for Sigma-Delta Modulators (DFSDM) characteristics
Unless otherwise specified, the parameters given in
Table 105. DFSDM measured timing 1.62-3.6 V for DFSDM
are derived from tests performed under the ambient temperature, f
PCLKx
frequency and supply voltage conditions
summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
.
•
•
•
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load C
L
= 30 pF
Measurement points are done at CMOS levels: 0.5V
DD
VOS level set to VOS0 •
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics (DìFSDM_CKINx, DFSDM_DATINx, DFSDM_CKOUT for DFSDM).
Symbol f
DFSDMCLK f
CKIN
(1/
T
CKIN
) f
CKOUT
DuCyCKOUT t wh(CKIN) t wl(CKIN) t su t h
T
Manchester
Parameter
DFSDM clock
Input clock frequency
Table 105. DFSDM measured timing 1.62-3.6 V
Conditions
1.62 V < V
DD
< 3.6 V
SPI mode (SITP[1:0]=0,1), External clock mode
(SPICKSEL[1:0]=0),
SPI mode (SITP[1:0]=0,1), Internal clock mode
(SPICKSEL[1:0]≠0)
Min
-
-
-
Output clock frequency
1.62 < V
DD
< 3.6 V -
Output clock frequency duty cycle
1.62 < V
DD
< 3.6 V
Typ
-
-
-
-
Max f
SYSCLK
20 (f
DFSDMCLK
/4)
20 (f
DFSDMCLK
/4)
20
Even division,CKOUTDIV[7:0]
= n, 1, 3, 5, ...
Odd division,CKOUTDIV[7:0]
= n, 2, 4, 6, ...
45 50 55
(((n/
2+1)/(n−1))*100)−5
(((n/2+1)/
(n−1))*100)
(((n/
2+1)/(n−1))*100)+5
Input clock high and low time
Data input setup time
Data input hold time
Manchester data period
(recovered clock period)
SPI mode
(SITP[1:0]=0,1),
External clock mode
(SPICKSEL[1:0]=0),
1.62 < V
DD
< 3.6 V
SPI mode
(SITP[1:0]=0,1),
External clock mode
(SPICKSEL[1:0]=0),
1.62 < V
DD
< 3.6 V
SPI mode
(SITP[1:0]=0,1),
External clock mode
(SPICKSEL[1:0]=0),
1.62 < V
DD
< 3.6 V
Manchester mode
(SITP[1:0]=2,3),
Internal clock mode
(SPICKSEL[1:0]¹0),
1.62 < V
DD
< 3.6 V
-
-
-
T
CKIN
/2 - 0.5
4
0.5
(CKOUTDIV[7:0]+1) x T
DFSDMCLK
T
CKIN
/2
-
-
-
-
-
-
(2*CKOUTDIV[7:0]) x T
DFSDMCLK
Unit
MHz
% ns
DS13196 - Rev 6 page 143/199
STM32H7B0xB
Operating conditions
SPICKSEL=3
SPICKSEL=2
SPICKSEL=1
SITP = 0
SITP = 1
Figure 51. Channel transceiver timing diagrams
(SPICKSEL=0)
SITP = 00
SITP = 01 t su t h t wl t wh t su t h t r t f t su t h t wl t wh t su t h t r t f
SITP = 2
SITP = 3
6.3.31
recovered clock recovered data
0 0 1 1 0
•
Camera interface (DCMI) timing specifications
Unless otherwise specified, the parameters given in
Table 106. DCMI characteristics for DCMI are derived
from tests performed under the ambient temperature, f
HCLK
frequency and VDD supply voltage summarized in
Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies , with the following
configuration:
DCMI_PIXCLK polarity: falling
DS13196 - Rev 6 page 144/199
STM32H7B0xB
Operating conditions
Symbol
-
DCMI_PIXCLK
D pixel t su(
DATA) t h
(DATA) tsu(HSYNC), tsu(VSYNC) th(HSYNC), th(VSYNC)
1. Guaranteed by design.
•
•
•
•
•
•
DCMI_VSYNC and DCMI_HSYNC polarity: high
Data formats: 14 bits
Capacitive load C
L
=30 pF
Measurement points are done at CMOS levels: 0.5V
DD
Output speed is set to OSPEEDRy[1:0] = 11
VOS level set to VOS0
Table 106. DCMI characteristics
Parameter
Frequency ratio DCMI_PIXCLK/f
HCLK
Pixel Clock input
Pixel Clock input duty cycle
Data input setup time
Data hold time
DCMI_HSYNC/ DCMI_VSYNC input setup time
DCMI_HSYNC/ DCMI_VSYNC input hold time
Figure 52. DCMI timing diagram
1/DCMI_PIXCLK
DCMI_PIXCLK t su(HSYNC) t h(HSYNC)
DCMI_HSYNC t su(VSYNC) t h(HSYNC)
DCMI_VSYNC t su(DATA) t h(DATA)
Min
-
-
30
2.5
1
3
1
DATA[0:13]
Max
0.4
80
70
-
-
-
-
Unit
-
MHz
%
ns
-
DS13196 - Rev 6 page 145/199
6.3.32
Note:
STM32H7B0xB
Operating conditions
•
•
•
•
•
•
•
PSSI interface characteristics
Unless otherwise specified, the parameters given in
for PSSI are derived from tests performed under the ambient temperature, f
HCLK
frequency and V
DD
supply voltage summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
PSSI_PDCK polarity: falling
PSSI_RDY and PSSI_DE polarity: low
Bus width : 16 lines
DATA width : 32 bits
Capacitive load C=30 pF
Measurement points are done at CMOS levels: 0.5V
DD
Output speed is set to OSPEEDRy[1:0] = 11
At VOS1, the performance in Transmit mode can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Table 107. PSSI transmit characteristics
Guaranteed by characterization results.
Symbol
-
Parameter
Frequency ratio PSSI_PDCK/f
HCLK
PSSI clock input PSSI_PDCK
D pixel t dv(DATA) t dh(DATA) t dv((DE) t dh(DE) t su(RDY) t h(RDY)
PSSI clock input duty cycle
Data output valid time
Data output hold time
DE output valid time
DE output hold time
RDY input setup time
RDY input hold time
1. At VOS1, these values are degraded by up to 5 %.
5
-
6
3
0
Min
30
-
-
-
0.4
50
70
10
-
14
-
-
-
Unit
-
MHz
% ns
Guaranteed by characterization results.
Symbol
-
PSSI_PDCK
D pixel t su(DATA) t h(DATA) t su((DE) t h(DE) t ov(RDY) t oh(RDY)
Table 108. PSSI receive characteristics
Parameter
Frequency ratio PSSI_PDCK/f
HCLK
PSSI clock input
PSSI clock input duty cycle
Data input setup time
Data input hold time
DE input setup time
DE input hold time
RDY output valid time
RDY output hold time
2
1
3
Min
-
-
30
1
-
4.5
-
-
-
Max
0.4
100
70
-
10
-
DS13196 - Rev 6 page 146/199
DS13196 - Rev 6
STM32H7B0xB
Operating conditions
CKPOL = 0
CKPOL = 1
PSSI D[15:0]
(output)
DEPOL = 0
DEPOL = 1
RDYPOL = 0 t su(RDY)
RDYPOL = 1
Figure 53. PSSI timing diagram in Transmit mode t c(PDCK) t w(PDCKH) t w(PDCKL) t f(PDCK) t r(PDCK) t ov(DATA)
Invalid data OUT t ov(DE) t oh(DATA)
Valid data OUT t oh(DE)
Invalid data OUT t h(RDY)
MSv65388V1
Figure 54. PSSI timing diagram in Receive mode t c(PDCK) t w(PDCKH) t w(PDCKL) t f(PDCK) t r(PDCK)
CKPOL = 0
CKPOL = 1
PSSI D[15:0]
(input) t su(DATA)
Invalid data IN t su(DE) t hDATA)
Valid data IN t h(DE)
Invalid data IN
DEPOL = 0
DEPOL = 1 t ov(RDY)
RDYPOL = 0
RDYPOL = 1 t oh(RDY)
MSv65389V1 page 147/199
STM32H7B0xB
Operating conditions
6.3.33
Note:
•
•
•
•
•
•
•
•
•
•
LCD-TFT controller (LTDC) characteristics
Unless otherwise specified, the parameters given in
Table 109 for LCD-TFT are derived from tests performed
under the ambient temperature, f
HCLK
frequency and VDD supply voltage summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
LCD_CLK polarity: high
LCD_DE polarity: low
LCD_VSYNC and LCD_HSYNC polarity: high
Pixel formats: 24 bits
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C
L
=30 pF
Measurement points are done at CMOS levels: 0.5VDD
IO Compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS 0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Symbol f
CLK
D
CLK t w(CLKH)
, t w(CLKL) t v(DATA) t h(DATA) t v(HSYNC)
, t v(VSYNC)
, t v(DE)
Table 109. LTDC characteristics
Parameter
LTDC clock output frequency
LTDC clock output duty cycle
Clock High time, low time
Data output valid time
Data output hold time
HSYNC/VSYNC/DE output valid time t h(HSYNC)
, t h(VSYNC)
, t h(DE)
HSYNC/VSYNC/DE output hold time
1. At VOS1, these values are degraded by up to 5 %.
Conditions
2.7 V < V
DD
< 3.6 V, 20 pF
2.7 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
-
-
2.7 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
-
2.7 V < V
DD
< 3.6 V
1.62 V < V
DD
< 3.6 V
-
Min
-
-
-
140
133
66.5
45 55 t w(CLK)
/2−0.5
t w(CLK)
/2+0.5
-
3.0
7.5
0
-
-
0
-
3.0
7.5
-
Unit
MHz
% ns
DS13196 - Rev 6 page 148/199
Figure 55. LCD-TFT horizontal timing diagram tCLK
LCD_CLK
LCD_VSYNC tv(HSYNC)
LCD_HSYNC tv(HSYNC) tv(DE) th(DE)
LCD_DE
LCD_R[0:7]
LCD_G[0:7]
LCD_B[0:7]
HSYNC width tv(DATA)
Pixel
1
Pixel
2
Horizontal back porch th(DATA)
Active width
One line
Pixel
N
Horizontal back porch
STM32H7B0xB
Operating conditions
6.3.34
Figure 56. LCD-TFT vertical timing diagram tCLK
LCD_CLK tv(VSYNC)
LCD_VSYNC
LCD_R[0:7]
LCD_G[0:7]
LCD_B[0:7]
M lines data tv(VSYNC)
VSYNC width
Vertical back porch
Active width
One frame
Vertical back porch
Timer characteristics
The parameters given in Table 110. TIMx characteristics
are guaranteed by design.
Refer to
Section 6.3.16 I/O port characteristics
for details on the input/output alternate function characteristics
(output compare, input capture, external clock, PWM output).
DS13196 - Rev 6 page 149/199
6.3.35
6.3.36
6.3.36.1
Note:
STM32H7B0xB
Operating conditions
Table 110. TIMx characteristics
Symbol t res(TIM)
Parameter
Timer resolution time
Conditions
AHB/APBx prescaler=1 or 2 or 4, f
TIMxCLK
= 280 MHz
AHB/APBx prescaler>4, f
TIMxCLK
=
140 MHz
Min
1
1
-
-
t t
Unit
TIMxCLK
TIMxCLK f
EXT
Timer external clock frequency on
CH1 to CH4
Res
TIM
Timer resolution t
MAX_COUNT
Maximum possible count with 32bit counter
f
TIMxCLK
= 280 MHz
0
-
f
TIMxCLK
16/32
/2
65536 × 65536 t
MHz bit
TIMxCLK
1. The maximum timer frequency on APB1 or APB2 is up to 280 MHz, by setting the TIMPRE bit in the RCC_CFGR register. If
APBx prescaler is 1 or 2 or 4, then TIMxCLK = rcc_hclk1, otherwise TIMxCLK = 4x F rcc_pclkx_d2
.
2. Guaranteed by design.
Low-power timer characteristics
Symbol t res(TIM) f
LPTIMxCLK f
EXT
Res
TIM t
MAX_COUNT
Table 111. LPTIMx characteristics
Parameter
Timer resolution time
Timer kernel clock
Timer external clock frequency on Input1 and Input2
Timer resolution
Maximum possible count
Min
1
0
0
-
-
Max
-
100 f
LPTIM xCLK/2
16
65536
Communication interfaces
I 2 C interface characteristics
The I 2 C interface meets the timings requirements of the I2C-bus specification and user manual revision 03 for:
•
•
•
Standard-mode (Sm): with a bit rate up to 100 kbit/s
Fast-mode (Fm): with a bit rate up to 400 kbit/s
Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The parameters given in Table 112 and
are obtained with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 00
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
The I 2 C timings requirements are guaranteed by design when the I 2 C peripheral is properly configured (refer to
RM0455 reference manual) and when the i2c_ker_ck frequency is greater than the minimum shown in the table below:
Unit t
TIMxCLK
MHz bit t
TIMxCLK
Symbol f
I2CCLK
Table 112. Minimum i2c_ker_ck frequency in all I 2 C modes
Parameter
I2CCLK frequency
Standard-mode
Fast-mode
Fast-mode Plus
Condition
-
Analog Filtre ON, DNF=0
Analog Filtre OFF, DNF=1
Analog Filtre ON, DNF=0
Min
2
9
9
19
Unit
MHz
DS13196 - Rev 6 page 150/199
STM32H7B0xB
Operating conditions
6.3.36.2
Note:
Symbol f
CK
Symbol f
I2CCLK
Parameter
I2CCLK frequency Fast-mode Plus
Condition
Analog Filtre OFF, DNF=1
Min
16
Unit
-
The SDA and SCL I/O requirements are met with the following restrictions:
•
•
The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS connected between the I/O pin and V
DDIOx
is disabled, but still present.
The 20 mA output drive requirement in Fast-mode Plus is not supported. This limits the maximum load C
Load supported in Fm+, which is given by these formulas: t r(SDA/SCL)
=0.8473xR
P xC
Load
R
P(min)
= (V
DD
-V
OL(max)
)/I
OL(max)
Where R
P
is the I2C lines pull-up. Refer to Section 6.3.16 I/O port characteristics for the I
2 C I/Os characteristics.
All I 2 C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog filter characteristics:
Table 113. I 2 C analog filter characteristics
Symbol t
AF
Parameter
Maximum pulse width of spikes that are suppressed by analog filter
1. Guaranteed by design.
2. Spikes whose width is lower than t
AF(min) are filtered.
3. Spikes whose width is higer than t
AF(max)
are not filtered.
Max
Unit
50
ns
•
•
•
•
•
USART interface characteristics
Unless otherwise specified, the parameters given in
Table 114 for USART are derived from tests performed under
the ambient temperature, f
PCLKx frequency and V
DD
supply voltage conditions summarized in
Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C
L
= 30 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics (NSS, CK, TX, RX for USART).
Parameter
USART clock frequency t su(NSS) t h(NSS) t w(SCKH)
, t w(SCKL) t su(MI)
NSS setup time
NSS hold time
CK high and low time
Data input setup time
Table 114. USART characteristics
Conditions
Master mode
Slave receiver mode
Slave mode transmitter mode, 2.7 V < V
DD
< 3.6 V
Slave mode transmitter mode, 1.62 V < V
DD
< 3.6 V
Slave mode
Slave mode
Master mode
Master mode t
Min ker
-
2
+2
Typ
-
-
-
Max
35
93.0
29.0
22.0
-
-
Unit
MHz
-
1/f ck
/2−2 1/f ck
/2 1/f ck
/2+2
17 ns
DS13196 - Rev 6 page 151/199
STM32H7B0xB
Operating conditions
Symbol t su(SI) t h(MI) t h(SI) t v(SO) t v(SO) t v(MO) t h(SO) t h(MO)
Parameter
Data input setup time
Data input hold time
Data output valid time
Data output hold time
Slave mode
Master mode
Slave mode transmitter mode, 1.62 V < V
Slave mode transmitter mode, 2.7 V < V
1. At VOS1, these values are degraded by up to 5 %.
Conditions
Slave mode
Master mode
Slave mode
Master mode
DD
DD
< 3.6 V
< 3.6 V
NSS input
High
Figure 57. USART timing diagram in Master mode t c(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1
1.5
-
-
-
Min
1
0
12
1
Typ
-
-
-
15.5
15.5
1.5
-
-
Max
-
-
-
22
17
2
-
-
Unit ns
CPHA=1
CPOL=0
CPHA=1
CPOL=1
RX
INPUT
TX
OUTPUT t su(RX) t w(SCKH) t w(SCKL)
MSB IN t h(RX)
MSB OUT t v(TX)
BIT6 IN
BIT1 OUT t h(TX) t r(SCK)
/t f(SCK)
LSB IN
LSB OUT
MSv65386V1
1.
Measurement points are done at 0.5V
DD
and with external C
L
= 30 pF.
DS13196 - Rev 6 page 152/199
STM32H7B0xB
Operating conditions
Figure 58. USART timing diagram in Slave mode
6.3.36.3
Note:
NSS input t w(SCKH) t c(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1 t a(TX)
TX output t su(NSS) t w(SCKL)
First bit OUT t h(RX) t v(TX) t su(RX)
RX input First bit IN t h(TX)
Next bits OUT
Next bits IN t t r(SCK) f(SCK) t h(NSS)
Last bit OUT
Last bit IN t dis(TX)
MSv65387V1
•
•
•
•
SPI interface characteristics
Unless otherwise specified, the parameters given in
Table 115 for SPI are derived from tests performed under
the ambient temperature, f
PCLKx
frequency and V
DD
supply voltage conditions summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 11
•
•
Capacitive load C
L
= 30 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics (NSS, SCK, MOSI, MISO for SPI).
Symbol f
SCK t su(NSS) t h(NSS) t su(MI)
Parameter
SPI clock frequency
NSS setup time
NSS hold time
Data input setup time
Table 115. SPI dynamic characteristics
Conditions
Master mode 2.7 < V
DD
< 3.6 V, SPI1, 2, 3
Master mode, 2.7 < V
DD
<3.6 V, SPI4, 5, 6
Master mode, 1.62 < V
DD
< 3.6 V, SPI4, 5, 6
Slave receiver mode, 1.62 < V
DD
< 3.6 V
Slave mode transmitter/full duplex, 2.7 < V
DD
< 3.6 V
Slave mode transmitter/full duplex, 1.62 <V
DD
< 3.6 V
Slave mode
Slave mode
Master mode
Typ
-
2
1
3 -
-
-
-
Max
Unit
125/100
100
100
-
-
-
MHz ns ns
DS13196 - Rev 6 page 153/199
STM32H7B0xB
Operating conditions
Symbol t su(SI) t h(MI) t h(SI) t a(SO) t dis(SO)
Parameter
Data input setup time
Data input hold time
Data output access time
Slave mode
Master mode
Slave mode
Slave mode
Conditions t t v(SO) v(MO) t h(SO) t h(MO)
Data output disable time Slave mode
Data output valid time
Data output hold time
Slave mode, 2.7 < V
DD
< 3.6 V
Slave mode, 1.62 < V
DD
< 3.6 V
Master mode, 2.7 < V
DD
< 3.6 V
Master mode, 1.62 < V
DD
< 3.6 V
Slave mode, 1.62 < V
DD
< 3.6 V
Master mode
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. Using PC3_C / PC2_C (not available on all packages).
Figure 59. SPI timing diagram - slave mode and CPHA = 0
7
0
-
-
0
-
-
Typ
2
3
-
-
1
9
-
13
1
1/5
1/5
-
-
Max
Unit
-
-
-
27
5
11/16
2/13
-
ns
NSS input t w(SCKH) t c(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1 t a(SO)
MISO output t su(NSS) t w(SCKL)
First bit OUT t h(SI) t v(SO) t su(SI)
MOSI input First bit IN t h(SO)
Next bits OUT
Next bits IN t r(SCK) t h(NSS) t f(SCK)
Last bit OUT t dis(SO)
Last bit IN
DS13196 - Rev 6 page 154/199
STM32H7B0xB
Operating conditions
MOSI input
Figure 60. SPI timing diagram - slave mode and CPHA = 1 (1)
NSS input
CPHA=1
CPOL=0
CPHA=1
CPOL=1 t su(NSS) t a(SO)
MISO output t w(SCKH) t c(SCK) t w(SCKL) t v(SO) t su(SI)
First bit OUT t h(SI)
First bit IN t h(SO)
Next bits OUT
Next bits IN t f(SCK) t h(NSS) t r(SCK) t dis(SO)
Last bit OUT
Last bit IN
1.
Measurement points are done at 0.5V
DD
and with external C
L
= 30 pF.
Figure 61. SPI timing diagram - master mode (1)
NSS input
High tc(SCK)
CPHA=0
CPOL=0
CPHA=0
CPOL=1
CPHA=1
CPOL=0
CPHA=1
CPOL=1
MISO
INPUT
MOSI
OUTPUT tsu(MI) tw(SCKH) tw(SCKL)
MSB IN th(MI)
MSB OUT tv(MO)
BIT6 IN
BIT1 OUT th(MO) tr(SCK) tf(SCK)
LSB IN
LSB OUT
6.3.36.4
1.
Measurement points are done at 0.5V
DD
and with external C
L
= 30 pF.
I 2 S Interface characteristics
Unless otherwise specified, the parameters given in
2 S are derived from tests performed under the ambient temperature, f
PCLKx
frequency and V
DD
supply voltage conditions summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
DS13196 - Rev 6 page 155/199
Note:
STM32H7B0xB
Operating conditions
•
•
•
•
•
•
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load C
L
= 30 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
HSLV activated when VDD ≤ 2.7 V
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics (CK,SD,WS).
Table 116. I 2 S dynamic characteristics
Symbol f
MCK
Parameter
I 2 S main clock output -
Conditions f
CK
I 2 S clock frequency
Master TX
Master RX
Slave TX
Slave RX t v(WS) t h(WS) t su(WS) t h(WS) t su(SD_MR) t su(SD_SR) t h(SD_MR) t h(SD_SR) t v(SD_ST) t v(SD_MT) t h(SD_ST) t h(SD_MT)
WS valid time
WS hold time
WS setup time
WS hold time
Data input setup time
Data input hold time
Data output valid time
Data output hold time
Master mode
Master mode
Slave mode
Slave mode
Master receiver
Slave receiver
Master receiver
Slave receiver
Slave transmitter (after enable edge)
Master transmitter (after enable edge)
Slave transmitter (after enable edge)
Master transmitter (after enable edge)
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. Using PC3_C / PC2_C (not available on all packages).
2
1
2
2
4.5
Min
-
-
-
-
-
-
0
1
-
-
7
0
-
-
-
-
-
-
-
-
Max
50
40
50
5.5
-
Unit
MHz
MHz ns
DS13196 - Rev 6 page 156/199
Figure 62. I 2 S slave timing diagram (Philips protocol) (1)
STM32H7B0xB
Operating conditions
1.
LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.
Figure 63. I 2 S master timing diagram (Philips protocol) (1)
DS13196 - Rev 6
1.
LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first byte.
page 157/199
6.3.36.5
Note:
STM32H7B0xB
Operating conditions
•
•
•
•
•
SAI characteristics
Unless otherwise specified, the parameters given in
Table 117 for SAI are derived from tests performed under
the ambient temperature, f
PCLKx
frequency and VDD supply voltage conditions summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load C
L
= 30 pF
IO Compensation cell activated.
Measurement points are done at CMOS levels: 0.5VDD
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output alternate function characteristics (SCK,SD,WS).
Table 117. SAI characteristics
Symbol f
MCK
Parameter
SAI Main clock output
Conditions
t f
CK v(FS)
SAI clock frequency
F
S
valid time
Master transmitter, 2.7 ≤ V
DD
≤ 3.6 V
Master transmitter, 1.62 ≤ V
DD
≤ 3.6 V
Master receiver, 1.6 ≤ V
DD
≤ 3.6 V
Slave transmitter, 2.7 ≤ VDD ≤ 3.6 V
Slave transmitter, 1.62 ≤ VDD ≤ 3.6 V
Slave receiver, 1.62 ≤ V
DD
≤ 3.6 V
Master mode,2.7 ≤ V
DD
≤ 3.6 V
Master mode, 1.62 ≤ V
DD
≤ 3.6 V
Slave mode t su(FS) t h(FS)
F
S
setup time
F
S
hold time
F
S
hold time
Master mode t su(SD_A_MR) t su(SD_B_SR) t h(SD_A_MR) t h(SD_B_SR) t v(SD_B_ST) t h(SD_B_ST) t v(SD_A_MT)
Data input setup time
Data output hold time
Data output valid time
Slave mode
Master receiver
Slave receiver
Master receiver
Data input hold time
Data output valid time
Slave receiver
Slave transmitter (after enable edge), 2.7 ≤ V
DD
≤ 3.6 V
Slave transmitter (after enable edge), 1.62 ≤ V
DD
≤ 3.6 V
Slave transmitter (after enable edge)
Master transmitter (after enable edge), 2.7 ≤ V
DD
≤ 3.6 V
Master transmitter (after enable edge), 1.62 ≤ V
DD
≤ 3.6 V
Master transmitter (after enable edge) t h(SD_A_MT)
Data output hold time
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. APB clock frequency must be at least twice SAI clock frequency.
2
0.5
1
5.5
3
-
-
8
-
-
7.5
Min
-
Max
50
Unit
-
-
-
-
-
-
-
-
8
1
34
27
27
37
30
50
14.5
18.5
-
-
MHz
-
-
-
-
-
13.5
16.5
14
18
-
ns
DS13196 - Rev 6 page 158/199
STM32H7B0xB
Operating conditions
SAI_SCK_X
SAI_FS_X(output) tv(FS)
SAI_SD_X(transmit)
SAI_SD_X(receive)
1/fSCK
Figure 64. SAI master timing waveforms th(FS) tsu(SD_MR) tv(SD_MT)
Slot n th(SD_MR)
Slot n
Slot n+2 th(SD_MT)
SAI_SCK_X tw(CKH_X)
SAI_FS_X(input)
SAI_SD_X(transmit) tsu(FS)
SAI_SD_X(receive)
1/fSCK
Figure 65. SAI slave timing waveforms tw(CKL_X) tsu(SD_SR) tv(SD_ST)
Slot n
Slot n th(SD_SR)
Slot n+2 th(FS) th(SD_ST)
6.3.36.6
Note:
•
•
•
•
MDIO characteristics
Unless otherwise specified, the parameters given in
Table 118 are derived from tests performed under the
ambient temperature, f
HCLK
frequency and V
conditions , with the following configuration:
DD
supply voltage summarized in Table 20. General operating
•
Output speed is set to OSPEEDRy[1:0] = 10
Measurement points are done at CMOS levels: 0.5V
I/O compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS0
DD
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
DS13196 - Rev 6 page 159/199
STM32H7B0xB
Operating conditions
Table 118. MDIO Slave timing parameters
Symbol
F
MDC t d(MDIO) t su(MDIO) t h(MDIO)
Parameter
Management Data Clock
Management Data Iput/output output valid time
Management Data Iput/output setup time
Management Data Iput/output hold time
1. At VOS1, these values are degraded by up to 5 %.
Min
-
9
2.5
1
Typ
-
11
-
-
Max
30
21
-
-
Unit
MHz ns
Figure 66. MDIO Slave timing diagram t
MDC) t d(MDIO) t su(MDIO) t h(MDIO)
6.3.36.7
Note:
•
•
•
•
•
•
SD/SDIO MMC card host interface (SDMMC) characteristics
Unless otherwise specified, the parameters given in
for SDIO are derived from tests performed under the ambient temperature, f
PCLKx
frequency and V
DD
supply voltage summarized in
Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies , with the following
configuration:
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C
L
=30 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
HSLV activated when V
DD
≤ 2.7 V
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output characteristics.
Table 119. Dynamics characteristics: SDMMC characteristics, V
DD
=2.7 to 3.6 V
Above 100 MHz, C
L
= 20 pF.
Symbol Parameter Conditions
Typ
f
PP
t
W(CKL) t
W(CKH)
Clock frequency in data transfer mode
SDIO_CK/f
PCLK2
frequency ratio
Clock low time
Clock high time
-
f
PP
=52 MHz f
PP
=52 MHz
0
-
8.5
8.5
-
-
9.5
9.5
133
8/3
-
-
Unit
MHz
ns
DS13196 - Rev 6 page 160/199
STM32H7B0xB
Operating conditions
Symbol Parameter Conditions
CMD, D inputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode t
ISU t
IH
Input setup time HS
Input hold time HS -
t
IDW
Input valid window (variable window) -
CMD, D outputs (referenced to CK) in eMMC legacy/SDR/DDR and SD HS/SDR/DDR mode t
OV t
OH
Output valid time HS
Output hold time HS
CMD, D inputs (referenced to CK) in SD default mode t
ISUD
Input setup time SD t
IHD
Input hold time SD
CMD, D outputs (referenced to CK) in SD default mode t
OVD t
OHD
Output valid default time SD
Output hold default time SD -
-
-
-
-
-
2.5
0.5
3.0
-
5
2.5
0.5
-
0
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.
Typ
6
1
-
-
-
-
-
-
-
-
-
-
6.5
-
1.5
-
-
-
Unit ns
ns ns ns
Table 120. Dynamics characteristics: eMMC characteristics VDD=1.71V to 1.9V
Above 100 MHz, C
L
= 20 pF.
Symbol Parameter Conditions Min
Ma
f
PP
Clock frequency in data transfer mode t
W(CKL) t
W(CKH)
Clock low time
Clock high time
CMD, D inputs (referenced to CK) in eMMC mode t
ISU t
IH
Input setup time HS
Input hold time HS t
IDW
Input valid window (variable window)
CMD, D outputs (referenced to CK) in eMMC mode t
OVD t
OHD
Output valid time HS
Output hold time HS
f
PP
=52 MHz f
PP
=52 MHz
-
-
-
-
-
0
8.5
8.5
2.5
0.5
3.5
-
5.5
-
9.5
9.5
-
-
-
-
6
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. The minimum window of time where the data needs to be stable for proper sampling in tuning mode.
85
-
-
-
-
-
-
6.5
Unit
MHz ns ns ns
DS13196 - Rev 6 page 161/199
Figure 67. SDIO high-speed mode
STM32H7B0xB
Operating conditions
CK
D, CMD(output)
Figure 68. SD default mode tOVD tOHD t r(CLK)
Figure 69. DDR mode t
(CLK) t w(CLKH) t w(CLKL) t f(CLK)
Clock
Data output
Data input t vf(OUT) t hr(OUT)
IO0
IO0
IO1 t sf(IN) t hf(IN)
IO1
IO2 t vr(OUT) t hf(OUT)
IO2
IO3
IO3
IO4 t sr(IN) t hr(IN)
IO5
IO4 IO5
6.3.36.8
USB OTG_FS characteristics
Unless otherwise specified, the parameters given in
Table 121. Dynamics characteristics: USB OTG_FS
for ULPI are derived from tests performed under the ambient temperature, f
PCLKx
frequency and V
DD
supply voltage
summarized in Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
DS13196 - Rev 6 page 162/199
6.3.36.9
Note:
STM32H7B0xB
Operating conditions
•
•
•
•
Capacitive load C
L
=20 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
VOS level set to VOS0
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output characteristics.
Table 121. Dynamics characteristics: USB OTG_FS
Symbol
V
DD33USB
R
PUI
R
PUR
Z
DRV
Parameter
USB transceiver operating voltage
Embedded USB_DP pull-up value during idle
Embedded USB_DP pull-up value during reception
Output driver impedance
Condition
-
-
-
Driver high and low
Min
3.0
900
1400
28
Typ
-
1250
2300
36
Max
3.6
1600
3200
44
Unit
V
Ω
1. The USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics that are degraded in the 2.7 to
3.0 V voltage range.
2. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching impedance is already included in the embedded driver.
•
•
•
•
USB OTG_HS characteristics
Unless otherwise specified, the parameters given in
Table 122 for ULPI are derived from tests performed under
the ambient temperature, f
PCLKx
frequency and V
DD
supply voltage summarized in
Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies
, with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
Capacitive load C
L
=20 pF
Measurement points are done at CMOS levels: 0.5V
DD
IO Compensation cell activated.
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output characteristics.
Table 122. Dynamics characteristics: USB ULPI
Symbol Parameter Condition
Max
Unit t t
SC t
HC t
SD t
HD
DC
/t
DD
Control in (ULPI_DIR , ULPI_NXT) setup time
Control in (ULPI_DIR, ULPI_NXT) hold time
Data in setup time
Data in hold time
Control/Datal output delay
-
-
-
-
2.7 < V
DD
< 3.6 V, C
L
=20 pF
1.71 < V
DD
< 3.6 V, C
L
=15 pF
3.5
2
3
0
-
-
1. Guaranteed by characterization results.
2. At VOS1, these values are degraded by up to 5 %.
3. For external ULPI transceivers operating at 1.8 V, check carefully the timing values for compatibility.
-
-
7
9
-
-
-
-
-
8.5
13 ns
DS13196 - Rev 6 page 163/199
STM32H7B0xB
Operating conditions
Figure 70. ULPI timing diagram
Clock
Control In
(ULPI_DIR,ULPI_NXT) tSC tSD data In
(8-bit)
Control out
(ULPI_STP) data out
(8-bit) tHC tHD tDD tDC tDC
6.3.36.10
Note:
•
•
JTAG/SWD interface characteristics
Unless otherwise specified, the parameters given in
for JTAG/SWD are derived from tests performed under the ambient temperature, f rcc_cpu_ck
frequency and V
DD
supply voltage summarized in
Table 20. General operating conditions and
Table 21. Maximum allowed clock frequencies , with the following
configuration:
•
•
Output speed is set to OSPEEDRy[1:0] = 10
Capacitive load C
L
=30 pF
Measurement points are done at CMOS levels: 0.5V
DD
VOS level set to VOS0
At VOS1, the performance can be degraded by up to 5 % compared to VOS0. This is indicated by a footnote when applicable.
Refer to
Section 6.3.16 I/O port characteristics
for more details on the input/output characteristics:
Symbol
F pp
1/t c(TCK) t isu(TMS) t ih(TMS) t isu(TDI) t ih(TDI) t ov(TDO)
Table 123. Dynamics JTAG characteristics
Parameter
T
CK
clock frequency
TMS input setup time
TMS input hold time
TDI input setup time
TDI input hold time
TDO output valid time t oh(TDO)
TDO output hold time
1. At VOS1, these values are degraded by up to 5 %.
Conditions
2.7 V <V
DD
< 3.6 V
1.62 V <V
DD
< 3.6 V
-
-
-
-
2.7 V <V
DD
< 3.6 V
1.62 V <V
DD
< 3.6 V
-
Min
-
-
1
1
-
-
1.5
1
7
Typ
-
-
-
-
8
8
-
-
-
Max
35
27.5
-
-
14
18
-
-
-
Symbol
F pp
Unit
MHz ns
Table 124. Dynamics SWD characteristics
Parameter
SWCLK clock frequency
Conditions
2.7V <V
DD
< 3.6 V
Min
-
Typ
-
Max
76
Unit
MHz
DS13196 - Rev 6 page 164/199
DS13196 - Rev 6
Symbol
1/t c(SWCLK) t isu(SWDIO) t ih(SWDIO)
Parameter
SWCLK clock frequency
SWDIO input setup time
SWDIO input hold time t ov(SWDIO)
SWDIO output valid time t oh(SWDIO)
SWDIO output hold
1. At VOS1, these values are degraded by up to 5 %.
Conditions
1.62 <V
DD
< 3.6 V
-
-
2.7V <V
DD
< 3.6 V
1.62 <V
DD
< 3.6 V
-
Figure 71. JTAG timing diagram t c(TCK)
TCK t su(TMS/TDI) t h(TMS/TDI) t w(TCKL) t w(TCKH)
TDI/TMS t ov(TDO)
TDO
STM32H7B0xB
Operating conditions
1
-
-
8
Min
-
2
-
8.5
8.5
-
Typ
-
-
Max
55.5
-
-
13
18
-
Unit
MHz ns t oh(TDO)
Figure 72. SWD timing diagram t c(SWCLK)
SWCLK
SWDIO
(receive)
SWDIO
(transmit) t su(SWDIO) t h(SWDIO) t ov(SWDIO) t wSWCLKL) t w(SWCLKH) t oh(SWDIO) page 165/199
7
STM32H7B0xB
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS13196 - Rev 6 page 166/199
STM32H7B0xB
LQFP64 package information
7.1
LQFP64 package information
This is a 64-pins, 10 x 10 mm, low-profile quad flat package.
Figure 73. LQFP64 - Outline
SEATING PLANE
C b
49 ccc C
D
D1
D3
48 33
32
L1
L
0.25 mm
GAUGE PLANE
K
64
PIN 1
IDENTIFICATION
1
1.
Drawing is not to scale.
e
16
17
DS13196 - Rev 6 page 167/199
STM32H7B0xB
LQFP64 package information
Table 125. LQFP64 pin - Mechanical data
Symbol
D
D1 b c
D3
E
A
A1
A2 e
K
L
E1
E3
L1 ccc
Min
-
0.050
1.350
0.170
0.090
-
-
-
-
-
-
-
0°
0.450
-
millimeters
Typ
-
-
1.400
0.220
-
12.000
10.000
7.500
12.000
10.000
7.500
0.500
3.5°
0.600
1.000
-
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Max
1.600
0.150
1.450
0.270
0.200
-
-
-
-
-
-
-
7°
0.750
-
0.080
Min
-
0.0020
0.0531
0.0067
0.0035
-
-
-
-
-
-
-
0°
0.0177
-
-
Figure 74. LQFP64 - Recommended footprint
Typ
-
-
0.0551
0.0087
-
0.4724
0.3937
0.2953
0.4724
0.3937
0.2953
0.0197
3.5°
0.0236
0.0394
-
Max
0.0630
0.0059
0.0571
0.0106
0.0079
-
-
-
-
-
-
-
7°
0.0295
-
0.0031
48
0.5
33
32
0.3
49
12.7
10.3
64
1
10.3
7.8
12.7
16
17
1.2
7.1.1
1.
Dimensions are expressed in millimeters.
Device marking for LQFP64
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
DS13196 - Rev 6 page 168/199
DS13196 - Rev 6
Figure 75. LQFP64 marking example (package top view)
STM32H7B0xB
LQFP64 package information
Product identification (1)
STM32H7B0
RBT6
Date code
Y WW
Revision code
Pin 1 indentifier
R
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
page 169/199
7.2
LQFP100 package information
This LQFP is a 100 pins, 14 x 14 mm, low-profile quad flat package.
Figure 76. LQFP100 - Outline
SEATING PLANE
C ccc C
D
D1
D3
76
75 51
50
0.25 mm
GAUGE PLANE
L1
L K
STM32H7B0xB
LQFP100 package information
DS13196 - Rev 6
100
PIN 1
IDENTIFICATION
1 e
25
26
1.
Drawing is not to scale
Table 126. LQFP100 - Mechanical data
Symbol
D1
D3
E
E1
E3 e
L
L1 k ccc
A
A1
A2 b c
D
Min
-
0.050
1.350
0.170
0.090
15.800
13.800
-
15.800
13.800
-
-
0.450
-
0.0°
millimeters
Typ
-
-
1.400
0.220
-
16.000
14.000
12.000
16.000
14.000
12.000
0.500
0.600
1.000
3.5°
-
16.200
14.200
-
-
0.750
-
7.0°
0.080
Max
1.600
0.150
1.450
0.270
0.200
16.200
14.200
-
1. Values in inches are converted from mm and rounded to 4 decimal digits.
0.6220
0.5433
-
-
0.0177
-
0.0°
-
Min
-
0.0020
0.0531
0.0067
0.0035
0.6220
0.5433
-
0.6299
0.5512
0.4724
0.0197
0.0236
0.0394
3.5°
-
Typ
-
-
0.0551
0.0087
-
0.6299
0.5512
0.4724
0.6378
0.5591
-
-
0.0295
-
7.0°
0.0031
Max
0.0630
0.0059
0.0571
0.0106
0.0079
0.6378
0.5591
page 170/199
Figure 77. LQFP100 - Recommended footprint
75 51
76 50
0.5
0.3
16.7
14.3
STM32H7B0xB
LQFP100 package information
100
1
12.3
16.7
25
26
1.2
1.
Dimensions are expressed in millimeters.
DS13196 - Rev 6 page 171/199
7.2.1
STM32H7B0xB
LQFP100 package information
Device marking for LQFP100
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
Figure 78. LQFP100 marking example (package top view)
Product identification (1)
ES32H7B0VBT6
Revision code
Date code
Y WW
Pin 1 indentifier
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
DS13196 - Rev 6 page 172/199
STM32H7B0xB
LQFP144 package information
7.3
LQFP144 package information
LQFP144 is a 144-pin, 20 x 20 mm low-profile quad flat package.
Figure 79. LQFP144 - Outline
SEATING
PLANE
C
A A2
A1 ccc C c
A1
D
D1
D3 b
109
108 73
72
0.25 mm
GAUGE PLANE
L1
L
K
E3 E1 E
144
PIN 1
IDENTIFICATION
1
1.
Drawing is not to scale e
36
37
DS13196 - Rev 6 page 173/199
DS13196 - Rev 6
STM32H7B0xB
LQFP144 package information
Table 127. LQFP144 - Mechanical data
Symbol
D
D1 b c
D3
E
A
A1
A2
E1
E3 e
L
L1 k ccc
Min
-
0.050
1.350
0.170
0.090
21.800
19.800
-
21.800
19.800
-
-
0.450
-
0°
millimeters
Typ
-
-
1.400
0.220
-
22.000
20.000
17.500
22.000
20.000
17.500
0.500
0.600
1.000
3.5°
-
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Max
1.600
0.150
1.450
0.270
0.200
22.200
20.200
-
22.200
20.200
-
-
0.750
-
7°
0.080
Min
-
0.0020
0.0531
0.0067
0.0035
0.8583
0.7795
-
0.8583
0.7795
-
-
0.0177
-
0°
-
Figure 80. LQFP144 - Recommended footprint
108 73
1.35
109 0.35
72
Typ
-
-
0.0551
0.0087
-
0.8661
0.7874
0.689
0.8661
0.7874
0.689
0.0197
0.0236
0.0394
3.5°
-
Max
0.0630
0.0059
0.0571
0.0106
0.0079
0.8740
0.7953
-
0.8740
0.7953
-
-
0.0295
-
7°
0.0031
0.5
19.9
17.85
22.6
144
1
1.
Dimensions are expressed in millimeters.
19.9
22.6
37
36 page 174/199
7.3.1
STM32H7B0xB
LQFP144 package information
Device marking for LQFP144
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
Figure 81. LQFP144 marking example (package top view)
Product identification (1)
STM32H7B0ZBT6
Date code
Y WW
Pin 1 indentifier
Revision code
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
DS13196 - Rev 6 page 175/199
7.4
LQFP176 package information
This LQFP is a 176-pin, 24 x 24 mm, 0.5 mm pitch, low profile quad flat package.
C Seating plane
Figure 82. LQFP176 - Outline
0.25 mm gauge plane
STM32H7B0xB
LQFP176 package information k
A1
HD
D
L1
L
PIN 1
IDENTIFICATION
ZE
E
HE e
ZD b
1.
Drawing is not to scale.
DS13196 - Rev 6 page 176/199
STM32H7B0xB
LQFP176 package information
Table 128. LQFP176 - Mechanical data
Symbol b c
D
HD
ZD
E
A
A1
A2
HE
ZE e
L
L1 k ccc
Min
-
0.050
1.350
0.170
0.090
23.900
25.900
-
23.900
25.900
-
-
0.450
-
0°
millimeters
Typ
-
-
-
-
1.250
-
-
1.250
0.500
-
1.000
-
-
-
-
-
1. Values in inches are converted from mm and rounded to four decimal digits.
2. L dimension is measured at gauge plane at 0.25 mm above the seating plane.
Max
26.100
-
-
0.750
-
7°
0.080
1.600
0.150
1.450
0.270
0.200
24.100
26.100
-
24.100
Min
1.0197
-
-
0.0177
-
0°
-
-
0.0020
0.0531
0.0067
0.0035
0.9409
1.0197
-
0.9409
Figure 83. LQFP176 - Recommended footprint
Typ
-
0.0492
0.0197
-
0.0394
-
-
-
-
-
-
-
-
-
0.0492
-
Max
1.0276
-
-
0.0295
-
7°
0.0031
0.0630
0.0059
0.0571
0.0106
0.0079
0.9488
1.0276
-
0.9488
1.2
1
176
0.5
133
132
0.3
44
45
Note: Dimensions are expressed in millimeters.
DS13196 - Rev 6
21.8
26.7
88
89
1.2
page 177/199
7.4.1
STM32H7B0xB
LQFP176 package information
Device marking for LQFP176
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
Figure 84. LQFP176 marking example (package top view)
Product identification (1)
STM32H7B0IBT6
Revision code
Date code
Y WW
Pin 1 indentifier
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
DS13196 - Rev 6 page 178/199
7.5
STM32H7B0xB
UFBGA169 package information
UFBGA169 package information
This UFBGA is a 169 balls, 7 x 7 mm, 0.50 mm pitch, ultra thin profile fine pitch ball grid array package
Figure 85. UFBGA169 - Outline
Z Seating plane
A2
A4
A3 e b
SIDE VIEW
E1
F
A
A1
A1 ball identifier ddd Z
A1 ball index area
X
E
A
F
D1 D e
Y
N
13
BOTTOM VIEW
1
Øb (169 balls)
Ø
Ø eee fff
M
M
Z
Z
X Y
TOP VIEW
1.
Drawing is not to scale.
2.
– The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized markings, or other feature of package body or integral heat slug.
– A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1 corner. Exact shape of each corner is optional.
DS13196 - Rev 6 page 179/199
DS13196 - Rev 6
STM32H7B0xB
UFBGA169 package information
Table 129. UFBGA169 - Mechanical data
Symbol e
F ddd
D
D1
E
E1
A
A1
A2
A4
Min.
-
-
-
-
0.230
6.850
-
6.850
-
-
-
-
-
millimeters
Typ.
-
-
0.130
0.320
0.280
7.000
6.000
7.000
6.000
0.500
0.500
-
-
-
Max.
0.600
0.110
-
-
0.330
7.150
-
7.150
-
-
-
0.080
0.015
0.050
Min.
-
-
-
-
0.0091
0.2697
-
0.2697
-
-
-
-
-
inches
Typ.
-
0.0051
0.0126
0.0110
0.2756
0.2362
0.2756
0.2362
0.0197
0.0197
-
-
-
-
Max.
0.0236
1. Values in inches are converted from mm and rounded to four decimal digits.
2. •
•
Ultra Thin profile: 0.50 < A ≤ 0.65 mm / Fine pitch: e < 1.00 mm pitch.
The total profile height (dim A) is measured from the seating plane to the top of the component
•
• The maximum total package height is calculated by the following methodology:
A Max = A1 Typ + A2 Typ + A4 Typ + √ (A1²+A2²+A4² tolerance values)
3. The typical balls diameters before mounting is 0.20 mm.
4. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.
5. The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained entirely in the respective zone eee above The axis of each ball must lie simultaneously in both tolerance zones.
0.0043
-
-
0.0130
0.2815
-
0.2815
-
-
-
0.0031
0.0059
0.0020
Figure 86. UFBGA169 - Recommended footprint
Dpad
Dsm
page 180/199
7.5.1
STM32H7B0xB
UFBGA169 package information
Table 130. UFBGA169 - recommended PCB design rules (0.5 mm pitch BGA)
Dimension
Pitch
Dpad
Dsm
Solder paste
Recommended values
0.5 mm
0.27 mm
0.35 mm typ. (depends on the soldermask registration tolerance)
0.27 mm aperture diameter
Device marking for UFBGA169
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
Figure 87. UFBGA169 marking example (package top view)
Ball 1 indentifier
Product identification (1)
STM32H
7B0ABI6Q
Date code
Y WW Revision code
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
DS13196 - Rev 6 page 181/199
7.6
STM32H7B0xB
UFBGA(176+25) package information
UFBGA(176+25) package information
This UFBGA is a 176+25 balls, 10 x 10 mm, 0.65 mm pitch, ultra thin profile fine pitch ball grid array package.
Figure 88. UFBGA(176+25) - Outline
C
Seating plane
A4
A2 A3
A e b
E1
F ddd C
A1
A
A1 ball identifier
A1 ball index area
A
F
E
D1 e
R
15
BOTTOM VIEW
1
Øb (176 + 25 balls)
Ø
Ø eee fff
M
M
C
C
A B
B
D
TOP VIEW
1.
Drawing is not to scale.
2.
The terminal A1 corner must be identified on the top surface by using a corner chamfer, ink or metalized markings, or other feature of package body or integral heat slug. A distinguishing feature is allowable on the bottom surface of the package to identify the terminal A1 corner. Exact shape of each corner is optional.
DS13196 - Rev 6 page 182/199
DS13196 - Rev 6
STM32H7B0xB
UFBGA(176+25) package information
Table 131. UFBGA(176+25) - Mechanical data
Symbol b
D
D1
E
E1
A1
A2
A3
A4 e
F ddd eee
fff
Min.
-
0.050
-
-
-
0.240
9.850
-
9.850
-
-
-
-
-
millimeters
Typ.
-
0.080
0.450
0.130
0.320
0.290
10.000
9.100
10.000
9.100
0.650
0.450
-
-
-
Max.
0.600
0.110
-
-
-
0.340
10.150
-
10.150
-
-
-
0.080
0.015
0.050
Min.
-
0.0020
-
-
-
0.0094
0.3878
-
0.3878
-
-
-
-
-
inches
Typ.
-
0.0031
0.0177
0.0051
0.0126
0.0114
0.03937
0.3583
0.03937
0.3583
0.0256
0.0177
-
-
-
Max.
0.0236
0.0043
-
-
-
0.0134
0.3996
-
0.3996
-
-
-
0.0031
0.0059
0.0020
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Ultra thin profile: 0.50 < A Max \u0001 0.65mm / Fine pitch: e < 1.00mm. The total profile height (Dim.A) is measured from the seating plane “C” to the top of the component.
3. The tolerance of position that controls the location of the pattern of balls with respect to datum A and B. For each ball there is a cylindrical tolerance zone eee perpendicular to datum C and located on true position with respect to datum A and B as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone.
4. The tolerance of position that controls the location of the balls within the matrix with respect to each other. For each ball there is a cylindrical tolerance zone fff perpendicular to datum C and located on true position as defined by e. The axis perpendicular to datum C of each ball must lie within this tolerance zone. Each tolerance zone fff in the array is contained entirely in the respective zone eee above The axis of each ball must lie simultaneously in both tolerance zones.
Figure 89. UFBGA(176+25) - Recommended footprint
Dpad
Dsm
page 183/199
7.6.1
STM32H7B0xB
Thermal characteristics
Table 132. UFBGA(176+25) - Recommended PCB design rules (0.65 mm pitch BGA)
Dimension
Pitch
Dpad
Dsm
Stencil opening
Stencil thickness
Pad trace width
Recommended values
0.65 mm
0.300 mm
0.400 mm typ. (depends on the soldermask registration tolerance)
0.300 mm aperture diameter
Between 0.100 mm and 0.125 mm
0.100 mm
Device marking for UFBGA176+25
The following figure gives an example of topside marking versus pin 1 position identifier location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which depend on supply chain operations, are not indicated below.
Figure 90. UFBGA176+25 marking example (package top view)
Product identification (1)
STM32H7B0
IBK6Q
Ball 1 indentifier
Date code
Y WW
Revision code
7.7
1.
Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not approved for use in production. ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
Thermal characteristics
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated using the following equation:
T
J max = T
A max + (P
D max × Θ
JA
)
DS13196 - Rev 6 page 184/199
7.7.1
STM32H7B0xB
Thermal characteristics
Where:
•
•
•
•
T
A max is the maximum ambient temperature in °C,
Θ
JA
is the package junction-to-ambient thermal resistance, in °C/W,
P
D max is the sum of P
INT max and P
I/O max (P
D max = P
INT max + P
I/O max),
P
INT max is the product of I
DD
and V
DD
, expressed in Watts. This is the maximum chip internal power.
P
I/O max represents the maximum power dissipation on output pins where:
P
I/O max = Σ (V
OL
× I
OL
) + Σ((V
DD
– V
OH
) × I
OH
), taking into account the actual V
OL
/ I
OL
and V
OH
/ I
OH
of the I/Os at low and high level in the application.
Symbol
Θ
JA
Θ
JB
Θ
JC
Definition
Thermal resistance junction-ambiant
Thermal resistance junction-board
Thermal resistance junction-case
Table 133. Thermal characteristics
Parameter
Thermal resistance junction-ambient LQFP64 - 10 x 10 mm /0.5 mm pitch
Thermal resistance junction-ambient LQFP100 - 14 x 14 mm /0.5 mm pitch
Thermal resistance junction-ambient LQFP144 - 20 x 20 mm /0.5 mm pitch
Thermal resistance junction-ambient LQFP176 - 24 x 24 mm /0.5 mm pitch value unit
48.8
47.4
46
43.6
Thermal resistance junction-ambient UFBGA169 - 7 x 7 mm /0.5 mm pitch
41.4
Thermal resistance junction-ambient UFBGA176+25 - 10 x 10 mm /0.65
mm pitch
44.4
Thermal resistance junction-board LQFP64 - 10 x 10 mm /0.5 mm pitch 37.2
Thermal resistance junction-board LQFP100 - 14 x 14 mm /0.5 mm pitch
Thermal resistance junction-board LQFP144 - 20 x 20 mm /0.5 mm pitch
39.2
41.3
Thermal resistance junction-board LQFP176 - 24 x 24 mm /0.5 mm pitch
40.2
Thermal resistance junction-board UFBGA169 - 7 x 7 mm /0.5 mm pitch 15.3
Thermal resistance junction-board UFBGA176+25 - 10 x 10 mm /0.65
mm pitch
Thermal resistance junction-case LQFP64 - 10 x 10 mm /0.5 mm pitch
25
13
Thermal resistance junction-case LQFP100 - 14 x 14 mm /0.5 mm pitch 12.8
Thermal resistance junction-case LQFP144 - 20 x 20 mm /0.5 mm pitch 12.6
Thermal resistance junction-case LQFP176 - 24 x 24 mm /0.5 mm pitch 11.5
Thermal resistance junction-case UFBGA169 - 7 x 7 mm /0.5 mm pitch 19.9
Thermal resistance junction-case UFBGA176+25 - 10 x 10 mm /0.65
mm pitch
18.9
°C/W
°C/W
°C/W
•
•
Reference documents
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural Convection (Still Air).
Available from www.jedec.org.
For information on thermal management, refer to application note “Thermal management guidelines for
STM32 32-bit Arm Cortex MCUs applications” (AN5036) available from www.st.com
.
DS13196 - Rev 6 page 185/199
8
STM32H7B0xB
Ordering information
Ordering information
Example: STM32
Device family
STM32 = Arm-based 32-bit microcontroller
H 7B0
Product type
H = High performance
Device subfamily
7B0 = STM32H7B0 Value line with cryptographic accelerator
Z
Pin count
R = 64 pins
V = 100 pins/balls
Z = 144 pins
A = 169 balls
I = 176 or 176 + 25 pins/balls
Flash memory size
B = 128 Kbytes
Package
T = LQFP ECOPACK2
K = UFBGA 0.65 mm pitch ECOPACK2
I = UFBGA 0.5 mm pitch ECOPACK2
B T 6 Q TR
Temperature range
6 = Industrial temperature range, –40 to 85 °C
Option
Q = with SMPS
Blank = without SMPS
Packing
TR = tape and reel
No character = tray or tube
For a list of available options (such as speed and package) or for further information on any aspect of this device, contact your nearest ST sales office.
DS13196 - Rev 6 page 186/199
STM32H7B0xB
Revision history
Date
20-Dec-2019
27-Apr-2020
08-Jul-2020
Revision
1
2
3
Table 134. Document revision history
Changes
Initial release.
Updated Octo-SPI interface in
Table 1. STM32H7B0xB features and peripheral counts
.
Updated Figure 2. Power-up/power-down sequence in
Section 6.1.6 Power supply scheme .
Updated HSLV feature description in
Section 3.8 General-purpose input/outputs
In Section 5 Pin descriptions : updated
pin names.
Updated Table 17. Voltage characteristics to add V
REF+
in the list of external main supply voltage.
Removed clock frequencies from
Table 20. General operating conditions
and added new
Table 21. Maximum allowed clock frequencies .
Changed condition for t
RSTTEMPO
.
in Table 27. Reset and power control block
Added I
DD50USB
in Table 30. USB regulator characteristics .
Updated Table 38. Typical current consumption in System Stop mode
, added
Table 39. Typical current consumption RAM shutoff in Stop mode
, and added
IWDG and changed SPDIFRX into SPDIFRX1 in Table 42. Peripheral current consumption in Run mode
.
Table 56. Flash memory programming : updated t
ME
description and unit.
In the whole
Section 6.3.18 FMC characteristics , replaced sentence "the
T
KERCK
is the fmc_ker_ck clock period" by "the T fmc_ker_ck
is the kernel clock period".
Section 6.3.19 Octo-SPI interface characteristics : added parameter
measurement conditions, updated
Table 87. OCTOSPI characteristics in SDR mode
and Table 88. OCTOSPI characteristics in DTR mode (with DQS)/Octal and Hyperbus
, updated
Figure 42. OctoSPI Hyperbus clock
,
Hyperbus read and Figure 44. OctoSPI Hyperbus write .
Updated Figure 48. Power supply and reference decoupling (V
and note
Section 6.3.30 Digital filter for Sigma-Delta Modulators (DFSDM) characteristics
, Section 6.3.31 Camera interface (DCMI) timing
specificationsSection 6.3.33 LCD-TFT controller (LTDC) characteristics
,
Section 6.3.36.2 USART interface characteristics
, Section 6.3.36.3 SPI interface characteristics ,
Section 6.3.36.4 I2S Interface characteristics
,
Section 6.3.36.5 SAI characteristics ,
Section 6.3.36.7 SD/SDIO MMC card host interface (SDMMC) characteristics
,
Section 6.3.36.9 USB OTG_HS characteristics ,
Section 6.3.36.10 JTAG/SWD interface characteristics : changed VOS level to
VOS0 in the parameter measurement conditions.
Updated note related to ULPI interface availability on packages that do not
feature PC2 and PC3 I/Os in Table 1. STM32H7B0xB features and peripheral counts
.
Updated Table 18. Current characteristics , Table 19. Thermal characteristics
and
Figure 13. Current consumption measurement scheme .
DS13196 - Rev 6 page 187/199
DS13196 - Rev 6
Date
16-Sep-2020
28-Sep-2020
04-May-2021
STM32H7B0xB
Revision
4
5
6
Changes
Updated Figure 12. Power supply scheme
. Added note to V
REFINT
in
Table 28. Embedded reference voltage .Added
Table 31. Inrush current and inrush electric charge characteristics for LDO and SMPS
. Updated
Table 44. Low-power mode wakeup timings ,
.
Updated Table 66. Output timing characteristics (HSLV OFF)
and
Table 67. Output timing characteristics (HSLV ON)
.
Updated Table 60. ESD absolute maximum ratings .
Added notes related to performance degradation at VOS1 in
Section 6.3.18 FMC characteristics ,
SPI interface characteristics ,
Section 6.3.32 PSSI interface characteristics
, Section 6.3.33 LCD-TFT controller (LTDC) characteristics
,
Section 6.3.36.2 USART interface characteristics
, Section 6.3.36.3 SPI interface characteristics ,
Section 6.3.36.4 I2S Interface characteristics
,
Section 6.3.36.5 SAI characteristics ,
Section 6.3.36.6 MDIO characteristics
, Section 6.3.36.7 SD/SDIO MMC card host interface
,
Section 6.3.36.9 USB OTG_HS characteristics
and Section 6.3.36.10 JTAG/SWD interface characteristics
. Updated F
(CLK) measurement conditions in
Table 87. OCTOSPI characteristics in SDR mode
and Table 88. OCTOSPI characteristics in DTR mode (with DQS)/Octal and
.
Added
Figure 45. ADC conversion timing diagram .
Added
Section 6.3.32 PSSI interface characteristics
.
Updated Figure 57. USART timing diagram in Master mode
and
Figure 58. USART timing diagram in Slave mode
.
Added note related to ULPI transceivers operating at 1.8 V in
Table 122. Dynamics characteristics: USB ULPI .
Updated VDDMMC separate supply pad in
In Section 3.31 True random number generator (RNG) , changed "random
number generator" in "true random number generator" and description updated.
Updated Figure 12. Power supply scheme
and
Section 6.3.2 VCAP external capacitor
.
Added V
BAT
in
Section 6.3.1 General operating conditions
.
Updated High-speed external user clock generated from an external source
and
Low-speed external user clock generated from an external source .
Added reference to application note AN4899 in
Section 6.3.16 I/O port characteristics
.
Updated DuCyCKOUT in Table 105. DFSDM measured timing 1.62-3.6 V
Updated Figure 88. UFBGA(176+25) - Outline
and
.
Updated V
HSEL
.
maximum value in
Table 45. High-speed external user clock
Added indication that patents apply to the devices in
.
Added reference to errata sheet in Section 1 Introduction .
Updated WKUP signals in Figure 1. STM32H7B0xB block diagram and in
Table 7. STM32H7B0xB pin/ball definition .
Updated Section 3.40 Serial peripheral interfaces (SPI)/integrated interchip sound interfaces (I2S)
.
Added note to TRIM parameter in Table 50. HSI oscillator characteristics .
Extended
Figure 46. ADC accuracy characteristics to both ADC resolutions and
updated Figure 47. Typical connection diagram using the ADC .
Replace 110 °C by 130 °C in Table 97. Analog temperature sensor calibration values
.
page 188/199
DS13196 - Rev 6
Date
STM32H7B0xB
Revision Changes
Updated t su(ADV-CLKH)
, t h(CLKH-ADV)
, t su(NWAIT-CLKH)
and t h(CLKH-NWAIT)
minimum
. Updated t su(DV-CLKH)
, t h(CLKH-DV)
, t
(NWAIT-CLKH)
and t h(CLKH-
NWAIT)
minimum values in
Table 79. Synchronous non-multiplexed NOR/PSRAM read timings
. Updated t su(SDCLKH _Data)
and t h(SDCLKH _Data)
minimum values in
Table 83. SDRAM read timings . Updated t
su(SDCLKH_Data)
and t h(SDCLKH_Data)
minimum values in Table 84. LPSDRAM read timings
.
•
•
•
Section 6.3.19 Octo-SPI interface characteristics :
Updated t
S(IN)/
/t
H(IN)
conditions and minimum values in Table 87. OCTOSPI characteristics in SDR mode
and updated Figure 40. OctoSPI timing diagram - SDR mode
.
Updated Table 88. OCTOSPI characteristics in DTR mode (with DQS)/
Figure 41. OctoSPI timing diagram - DTR mode
.
•
•
Table 115. SPI dynamic characteristics :
Changed t su(MI)
and t h(MI)
minimum values in Master mode.
Removed t w(SCKH)
, t w(SCKL)
.
•
•
Table 119. Dynamics characteristics: SDMMC characteristics, V
:
Modified t mode.
ISU
and t
IH
minimum values for CMD/ D inputs in High-speed
Modified t
ISUD
and t
IH
minimum values for CMD/ D inputs in Default mode.
•
•
Table 120. Dynamics characteristics: eMMC characteristics VDD=1.71V to 1.9V
Removed SDIO_CK/f
PCLK2
frequency ratio.
Modified t
ISU
and t
IH
minimum values in CMD, D inputs (referenced to CK) in eMMC mode.
•
•
•
Section 7.5 UFBGA169 package information :
Table 129. UFBGA169 - Mechanical data
Removed note related to non-solder mask below
.
.
•
•
Section 7.6 UFBGA(176+25) package information :
Figure 88. UFBGA(176+25) - Outline .
Figure 89. UFBGA(176+25) - Recommended footprint
.
page 189/199
STM32H7B0xB
Contents
Contents
DS13196 - Rev 6 page 190/199
STM32H7B0xB
Contents
High-definition multimedia interface (HDMI) - consumer electronics control (CEC) . . . . . . . 33
DS13196 - Rev 6 page 191/199
STM32H7B0xB
Contents
DS13196 - Rev 6 page 192/199
STM32H7B0xB
Contents
DS13196 - Rev 6 page 193/199
STM32H7B0xB
List of tables
List of tables
Table 41. Typical and maximum current consumption in V
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 43. Peripheral current consumption in Stop, Standby and V
mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
DS13196 - Rev 6 page 194/199
STM32H7B0xB
List of tables
Table 91. Minimum sampling time vs R
DS13196 - Rev 6 page 195/199
STM32H7B0xB
List of tables
Table 119. Dynamics characteristics: SDMMC characteristics, V
=2.7 to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
DS13196 - Rev 6 page 196/199
STM32H7B0xB
List of figures
List of figures
Figure 14. External capacitor C
Figure 15. SMPS efficicency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode, T
Figure 16. SMPS efficiency vs load current in Run, Sleep and Stop mode with SVOS3 MR mode, T
Figure 17. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5), T
Figure 18. SMPS efficiency vs load current in Stop and DStop modes (SVOS3 LP mode, SVOS4, SVOS5), T
Figure 19. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5), T
Figure 20. SMPS efficiency vs load current in Stop and DStop2 modes (SVOS3 LP mode, SVOS4, SVOS5), T
Figure 48. Power supply and reference decoupling (V
). . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 49. Power supply and reference decoupling (V
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
DS13196 - Rev 6 page 197/199
STM32H7B0xB
List of figures
S master timing diagram (Philips protocol)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
DS13196 - Rev 6 page 198/199
STM32H7B0xB
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DS13196 - Rev 6 page 199/199
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