STMicroelectronics RHF43B Datasheet
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RHF43B
Datasheet
Rad-hard precision bipolar single operational amplifier
Ceramic Flat-8
1 8
NC
IN -
IN +
VDD
_
+
NC
VC C
OUT
NC
4 5
The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package
Maturity status link
RHF43B
Features
• Rail-to-rail output
• Bandwidth: 8 MHz gain at 16 V
• Low input offset voltage: 100 µV typ
• Supply current: 2.2 mA typ
• Operating from 3 to 16 V
• Input bias current: 30 nA typ
• ESD internal protection ≥ 2 kV
• Latch-up immunity: 200 mA
• ELDRS free up to 300 krad
• SEL immune at 120 MEV.cm
2 /mg
Applications
• Space probes and satellites
• Defense systems
• Scientific instrumentation
• Nuclear systems
Description
The RHF43B is a precision, bipolar operational amplifier available in a ceramic Flat-8 package and in die form. In addition to its low offset voltage, rail-to-rail feature, and wide supply voltage, the RHF43B features a good immunity to radiations.
DS5258 - Rev 14 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
RHF43B
Absolute maximum ratings and operating conditions
Absolute maximum ratings and operating conditions
Table 1. Absolute maximum ratings
Symbol
V
CC
V id
V in
I in
T stg
T j
R thja
R thjc
ESD
Supply voltage
Differential input voltage
Input voltage range
Input current
Storage temperature
Maximum junction temperature
HBM: human body model
Latch-up immunity
Parameter
Thermal resistance junction to ambient area
Thermal resistance junction to case (4)
Lead temperature (soldering, 10 s)
Value
18
±1.2
V
DD
- 0.3 to 16
45
-65 to 150
150
125
40
2
200
260
Unit
V mA
°C
°C/W kV mA
°C
1. The supply voltage is defined as the difference between the voltages applied on the VCC and VDD pins.
2. The differential voltage is the non-inverting input terminal with respect to the inverting input terminal
3. The magnitude of the input and output voltage must never exceed V
CC
+ 0.3 V.
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R th
are typical values.
6. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a 1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations while the other pins are floating.
Symbol
V
CC
V icm
T oper
Table 2. Operating conditions
Parameter
Supply voltage
Common-mode input voltage
Operating free-air temperature range
Value
3 to 16
V
DD to V
CC
-55 to 125
Unit
V
°C
DS5258 - Rev 14 page 2/22
RHF43B
Electrical characteristics
2 Electrical characteristics
Symbol
I
CC
V io
DV io
I ib
DI ib
I io
R in
C in
CMR
SVR
A
VD
V
OH
Table 3. 16 V supply: V
CC
= 16 V, V
DD
= 0 V, load to V
CC
/2 (unless otherwise specified)
Parameter Test conditions
DC performance
Min.
Typ.
Max.
Supply current
Offset voltage
No load
Vicm = Vcc/2
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
-500
-300
-500
2.5
100
2.9
2.9
2.9
500
300
500
Input offset voltage drift 1
Input bias current Vicm = Vcc/2
125 °C
25 °C
-55 °C
-100
-60
-100
30
100
60
100
Input offset current temperature drift Vicm = Vcc/2 100
Input offset current Vicm = Vcc/2
125 °C
25 °C
-55 °C
-35
-15
-35
1
35
15
35
Differential input resistance between in+ and in-
Input resistance between in+ (or in-) and
GND
Differential input capacitance between in+ and in-
Input capacitance between in+ (or in-) and
GND
25 °C
25°C
0.16
2000
8
2
Common mode rejection ratio
Supply voltage rejection ratio
Large signal voltage gain
High level output voltage
0 < Vicm < 16 V
3 V < Vcc < 16 V,
Vicm = Vcc/2
Vout = 0.5 V to 15.5 V,
RL = 1 kΩ,
0 < Vicm < 16 V
RL = 1 kΩ
RL = 10 kΩ
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
60
15.6
15.7
15.6
15.8
80
60
74
72
72
72
80
90
110
120
85
15.8
Unit mA
µV
µV/°C nA pA/°C nA
MΩ pF dB
V
DS5258 - Rev 14 page 3/22
Symbol
V
OH
Parameter
High level output voltage
V
OL
Low level output voltage
Output sink current
I out
Output source current
GBP Gain bandwidth product
F u ϕm
Unity gain frequency
Phase margin
SR Slew rate e n i n
THD+e n
Equivalent input noise voltage
Equivalent input noise current
Total harmonic distortion + noise
RHF43B
Electrical characteristics
Test conditions
RL = 10 kΩ
RL = 1 kΩ
RL = 10 kΩ
Vout = Vcc
Vout = Vcc
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
AC performance f = 100 kHz, RL = 1 kΩ,
CL = 100 pF
RL = 1 kΩ, CL = 100 pF
Gain = 5, RL = 1 kΩ,
CL = 100 pF
125 °C
25 °C
-55 °C
25 °C
25 °C
RL = 1 kΩ, CL = 100 pF f = 1 kHz f = 1 kHz
Vout = (Vcc - 1 V)/5,
Gain = -5.1, Vicm = Vcc/2
125 °C
25 °C
-55 °C
25 °C
25 °C
25 °C
15
20
15
10
15
10
Min.
15.9
15.8
Typ.
15.96
Max.
0.1
0.04
0.3
0.2
0.3
0.1
0.06
0.1
30
25
3.5
6
3.5
1.7
2
1.7
8
5
50
3
7.5
1
0.01
Unit
V mA
MHz
Degrees
V/μs nV/√Hz pA/√Hz
%
Symbol
I
CC
Table 4. 3 V supply: V
CC
= 3 V, V
DD
= 0 V, load to V
CC
/2 (unless otherwise specified)
Parameter Test conditions
DC performance
Min.
Typ.
Supply current No load
125 °C
25 °C
-55 °C
2.2
Max.
2.6
2.6
2.6
Unit mA
DS5258 - Rev 14 page 4/22
RHF43B
Electrical characteristics
Symbol
V io
Offset voltage
Parameter Test conditions
Vicm = Vcc/2
125 °C
25 °C
-55 °C
DV io
Input offset voltage drift
I ib
Input bias current Vcc = 4 V, Vicm = Vcc/2
125 °C
25 °C
-55 °C
DI ib
Input offset current temperature drift Vcc = 4 V, Vicm = Vcc/2
I io
Input offset current Vcc = 4 V, Vicm = Vcc/2
125 °C
25 °C
-55 °C
R
C in in
CMR
A
V
V
V
VD
OH
OL
OL
Differential input resistance between in+ and in-
Input resistance between in+ (or in-) and
GND
Differential input capacitance between in+ and in-
Input capacitance between in+ (or in-) and
GND
Common mode rejection ratio
Large signal voltage gain
High level output voltage
Low level output voltage
Low level output voltage
25 °C
25°C
0 < Vicm < 3 V
Vout = 0.5 V to 2.5 V,
RL = 1 kΩ, 0 < Vicm < 3 V
RL = 1 kΩ
RL = 10 kΩ
RL = 1 kΩ
RL = 10 kΩ
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
2.9
2.8
2.9
2.94
2.9
72
72
72
60
74
60
2.8
Min.
-500
-300
-500
-100
-60
-100
-35
-15
-35
2000
8
2
Typ.
100
Max.
500
300
500
1
30
100
60
100
100
1
35
15
35
0.16
90
85
2.95
2.98
0.05
0.02
0.2
0.1
0.2
0.1
0.06
0.1
Unit
µV
µV/°C nA pA/°C nA
MΩ pF dB
V
V
DS5258 - Rev 14 page 5/22
Symbol Parameter
Output sink current
I out
Output source current
GBP Gain bandwidth product
F u ϕm
Unity gain frequency
Phase margin
SR Slew rate e n i n
THD+e n
Equivalent input noise voltage
Equivalent input noise current
Total harmonic distortion + noise
RHF43B
Electrical characteristics
Test conditions
Vout = Vcc
Vout = Vcc
AC performance f = 100 kHz, RL = 1 kΩ,
CL = 100 pF
RL = 1 kΩ, CL = 100 pF
Gain = 5, RL = 1 kΩ,
CL = 100 pF
125 °C
25 °C
-55 °C
25 °C
25 °C
RL = 1 kΩ, CL = 100 pF f = 1 kHz f = 1 kHz
Vout = (Vcc - 1 V)/5,
Gain = -5.1, Vicm = Vcc/2
125 °C
25 °C
-55 °C
25 °C
25 °C
25 °C
125 °C
25 °C
-55 °C
125 °C
25 °C
-55 °C
10
15
10
Min.
15
20
15
Typ.
Max.
30
25
3.5
6
3.5
1.7
2
1.7
7.5
5
50
2.7
7
0.8
0.01
Unit mA
MHz
Degrees
V/μs nV/√Hz pA/√Hz
%
DS5258 - Rev 14 page 6/22
RHF43B
Electrical characteristic curves
3 Electrical characteristic curves
Figure 1. Input offset voltage distribution Figure 2. Input bias current vs. supply voltage
Figure 3. Input bias current vs Vicm at VCC = 3 V Figure 4. Input bias current vs Vicm at VCC = 4 V
1.0
0.5
0.0
−0.5
T= +125° C
−1.0
T= +25°C
−1.5
−2.0
0.0
T= −55°C
0.5
1.0
1.5
2.0
2.5
3.0
Input Common Mode Vo ltag e (V)
Vcc = 4V
3.5
4.0
Figure 5. Input bias current vs. Vicm at VCC = 16 V
1.0
−0.5
−1.0
0.5
T= +125° C
0.0
T= +25°C
−1.5
−2.0
0
T= −55°C
2 4 6 8 1 0 1 2
Input Common Mode Vo ltag e (V)
Vcc = 16V
1 4 1 6
Figure 6. Gain bandwidth product vs. Vicm at VCC = 10 V
DS5258 - Rev 14 page 7/22
Figure 7. Supply current vs. Vicm in follower configuration at VCC = 3 V
RHF43B
Electrical characteristic curves
Figure 8. Supply current vs. Vicm in follower configuration at VCC = 16 V
Figure 9. Supply current vs. supply voltage at
Vicm = VCC/2
Figure 10. Output current vs. supply voltage at
Vicm = VCC/2
Figure 11. Output current vs. output voltage at VCC = 3 V Figure 12. Output current vs. output voltage at VCC = 16 V
DS5258 - Rev 14 page 8/22
RHF43B
Electrical characteristic curves
Figure 13. Differential input voltage vs. output voltage at
VCC = 3 V
Figure 14. Differential input voltage vs. output voltage at
VCC = 16 V
Figure 15. Noise vs. Vicm at VCC= 10 V Figure 16. Noise vs. frequency at VCC = 3 V and
VCC = 16 V
Vcc= 3V, Vicm =2.5V, Ta mb =25°C
Vcc= 16V, Vicm =2.5V, Ta mb =25°C
Figure 17. Voltage gain and phase vs. frequency at
Vicm = 1.5 V and Vcc = 3 V
50 180
30
10
00
−10
−30
−50
10
4
Vcc= 3V, Vicm =1.5V, G= −100
R l=1kOhm s, Cl=100p F, Vrl=Vcc/ 2
Ta mb =25° C
10
5
10
6
0
10
7
−180
Figure 18. Voltage gain and phase vs. frequency at
Vicm = 2.5 V and Vcc = 3 V
50 180
30
10
00
−10
−30
−50
10
4
Vcc= 3V, Vicm =2.5V, G= −100
R l=1kOhm s, Cl=100p F, Vrl=Vcc/ 2
Ta mb =25° C
10
5
10
6
0
10
7
−180
DS5258 - Rev 14 page 9/22
Figure 19. Voltage gain and phase vs. frequency at
Vicm = 0.5 V and Vcc = 3 V
50 180
30
10
00
−10
−30
−50
10
4
Vcc= 3V, Vicm =0.5V, G= −100
R l=1kOhm s, Cl=100p F, Vrl=Vcc/ 2
Ta mb =25° C
10
5
10
6
0
10
7
−180
Figure 21. Voltage gain and phase vs. frequency at
Vicm = 15.5 V and Vcc = 16 V
50 180
30
10
00
−10
−30
−50
10
4
Vcc= 16V, Vicm =15. 5V, G= −100
R l=1kOhm s, Cl=100p F, Vrl=Vcc/ 2
Ta mb =25° C
10
5
10
6
0
10
7
−180
Figure 23. Inverting large signal pulse response at
VCC = 3 V, 25°C
Vcc= 3V, Vin=1Vpp
G=-100
RHF43B
Electrical characteristic curves
Figure 20. Voltage gain and phase vs. frequency at
Vicm = 8 V and Vcc = 16 V
50 180
30
10
−10
−30
−50
10
4
Vcc=16V, Vicm=0.5V, G= −100
Rl=1kOhms, Cl=100pF, Vrl=Vcc/2
Ta mb=25°C
10
5
10
6
0
10
7
−180
Figure 22. Voltage gain and phase vs. frequency at
Vicm = 0.5 V and Vcc = 16 V
50 180
30
10
00
−10
−30
−50
10
4
Vcc= 16V, Vicm =0.5V, G= −100
R l=1kOhm s, Cl=100p F, Vrl=Vcc/ 2
Ta mb =25° C
10
5
10
6
0
10
7
−180
Figure 24. Inverting large signal pulse response at
VCC = 16 V, 25°C
44
22
00
88
66
Vcc= 16V, Vin=1Vpp,
G= -100
-0.5 0.0
2.0 2.5 3.0 3.5 4.0
DS5258 - Rev 14 page 10/22
RHF43B
Radiations
4 Radiations
4.1
4.2
4.3
Note:
Introduction
Table 5. Radiations summarizes the radiation performance of the RHF43B.
Type
TID
Table 5. Radiations
Features
High-dose rate
Low-dose rate
ELDRS
SEL immunity (at 125 °C) up to:
Inverting
Heavy ions
SET characterized Non-inverting
Subtracting
Value
300
300
300
110
LET th
= 1
σ = 2.00E-03
LET th
= 0
σ = 1.00E-03
LET th
= 0
σ = 2.00E-03
Unit krad
MeV.cm²/mg
MeV.cm²/mg cm²/device
MeV.cm²/mg cm²/device
MeV.cm²/mg cm²/device
Total ionizing dose (TID)
The products guaranteed in radiation within the RHA QML-V system fully comply with the MILSTD-883 test method 1019 specification.
The RHF43B is RHA QML-V qualified, and is tested and characterized in full compliance with the MIL-STD-883 specification. It using a mixed bipolar and CMOS technology and is tested both below 10 mrad/s (low dose rate) and between 50 and 300 rad/s (high dose rate).
• The ELDRS characterization is performed in qualification only on both biased and unbiased parts, on a sample of ten units from two different wafer lots.
• Each wafer lot is tested at high-dose rate only, in the worst bias case condition, based on the results obtained during the initial qualification.
Heavy ions
The heavy ion trials are performed on qualification lots only. No additional test is performed.
DS5258 - Rev 14 page 11/22
RHF43B
Achieving good stability at low gain
5 Achieving good stability at low gain
C
R
Vin
At low frequencies, the RHF43B can be used in a low gain configuration as shown in
Figure 25. Low gain configuration
. At lower frequencies, the stability is not affected by the value of the gain, which can be set close to
1 V/V (0 dB), and is reduced to its simplest expression G1 = 1+Rfb/Rg. Therefore, an R-C cell is added in the gain network so that the gain is increased (up to 5) at higher frequencies (where the stability of the amplifier could be affected). At higher frequencies, the gain becomes G2 = 1+Rfb/(Rg//R).
Figure 25. Low gain configuration Figure 26. Closed-loop gain
V
CC
Gain
(dB)
A
VD
+
Vout
Frequencies where the op-amp can be used
1
2 RC
G2=1+Rfb/(Rg//R)
-
C
L
= 100 pF
RL
1 k Ω
+20 dB/dec 20 dB/dec
VDD
Rg
Rfb = 2 k Ω
G1=1+Rfb//Rg
Gain bandwidth product
0 dB
G1
2 ∏ (G1R+Rfb)C
Bandwidth of the op-amp at G2
Log frequency
Rg becomes a complex impedance. The closed-loop gain features a variation in frequency and can be expressed
Equation 1
Gai n = G1 ---------
ω x
ω
Where a pole appears at 1/2ᴨRC and a zero at G1/2ᴨ(G1R+Rfb)C. The frequency can be plotted as shown in
G1 (V/V)
1.1
2
3
4
5
Table 6. External components versus low-frequency gain
R (Ω)
510
Not connected
C (nF)
1
Not connected
Rg (Ω)
20 k
2 k
1 k
750
820
Rfb (Ω)
2 k
2.4 k
3.3 k
DS5258 - Rev 14 page 12/22
6
RHF43B
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS5258 - Rev 14 page 13/22
6.1
Ceramic Flat-8 package information
Figure 27. Ceramic Flat-8 package outline
RHF43B
Ceramic Flat-8 package information
Pin n° 1 identification
Note: The upper metallic lid is not electrically connected to any pins, nor to the IC die inside the package. Connecting unused pins or metal lid to ground or to the power supply will not affect the electrical characteristics.
Ref.
E
E2
E3 e
L
A b c
D
Q
S1
N
Min.
2.24
0.38
0.10
6.35
6.35
4.32
0.88
6.51
0.66
0.92
Table 7. Ceramic Flat-8 mechanical data
Dimensions
Millimeters
Typ.
6.48
4.45
1.01
1.27
2.44
0.43
0.13
6.48
Max.
2.64
0.48
0.16
6.61
6.61
4.58
1.14
Min.
0.088
0.015
0.004
0.250
0.250
0.170
0.035
0.79
1.12
08
7.38
0.92
1.32
0.256
0.026
0.036
Inches
Typ.
0.096
0.017
0.005
0.255
0.255
0.175
0.040
0.050
0.031
0.044
08
Max.
0.104
0.019
0.006
0.260
0.260
0.180
0.045
0.291
0.036
0.052
DS5258 - Rev 14 page 14/22
RHF43B
Ordering information
7 Ordering information
Table 8. Ordering information
Order code
RHF43BK1
RHF43BK-01V
SMD pin
-
5962F0623701VXC
Quality level
Engineering model
QML-V flight
Package
Flat-8
Lead finish
Gold
1. Specific marking only. Complete marking includes the following: SMD pin (as indicated in above table), ST logo, Date code (date the package was sealed) in YYWWA (year, week, and lot index of week), QML logo
(Q or V), Country of origin (FR = France).
Marking
RHF43BK1
5962F0623701VXC
Note:
Packing
Strip pack
Contact your ST sales office for information regarding the specific conditions for products in die form and QML-Q versions.
Other information
Date code:
The date code is structured as engineering model: EM xyywwz
Where: x = 3 (EM only), assembly location Rennes (France) yy = last two digits of the year ww = week digits z = lot index of the week
Product documentation
Each product shipment includes a set of associated documentation within the shipment box. This documentation depends on the quality level of the products, as detailed in the table below.
The certificate of conformance is provided on paper whatever the quality level. For QML parts, complete documentation, including the certificate of conformance, is provided on a CDROM.
Quality level
Engineering model
Table 9. Product documentation
Item
Certificate of conformance including :
Customer name
Customer purchase order number
ST sales order number and item
ST part number
Quantity delivered
Date code
Reference to ST datasheet
Reference to TN1181 on engineering models
ST Rennes assembly lot ID
DS5258 - Rev 14 page 15/22
Quality level
QML-V Flight
RHF43B
Ordering information
Item
Certificate of Conformance including:
Customer name
Customer purchase order number
ST sales order number and item
ST part number
Quantity delivered
Date code
Serial numbers
Group C reference
Group D reference
Reference to the applicable SMD
ST Rennes assembly lot ID
Quality control inspection (groups A, B, C, D, E)
Screening electrical data in/out summary
Precap report
PIND (particle impact noise detection) test
SEM (scanning electronic microscope) inspection report
X-ray plates
DS5258 - Rev 14 page 16/22
RHF43B
Revision history
29-Jan-2008
11-May-2009
15-Oct-2009
30-Mar-2010
20-Aug-2010
27-Jul-2011
08-Nov-2012
Date
21-May-2007
10-Dec-2007
06-Feb-2015
24-Mar-2015
Revision
1
2
3
4
5
6
7
8
9
10
11
Table 10. Document revision history
Changes
First public release
Changed name of pins on pinout diagram on cover page
Modified supply current values over temperature range in electrical characteristics.
Power dissipation removed from AMR table
Added ELRS-free rad-hard design in description on cover page
Modified description of heavy ion latch-up (SEL) immunity parameter in Table 2.
Updated radiation immunity in Features and in Table 2
Updated smb reference in Features
Updated test conditions for Avd vs. Vicm in Table 4 and Table 5
Updated input current and voltage noise in Table 4
Updated order codes in Table 9
Added Figure 4 and Figure 5
Added information for ambient temperature in Table 4 and Table 5
Added Section 4: "Achieving good stability at low gain"
Corrected "L" dimension in Table 8
Added note underneath Figure 27 and in the "Pin connections" diagram on the cover page.
Features: added silhouette
Added Table 1: Device summary
Table 2: removed ±9 from “Supply voltage”; updated footnote1.
Added Figure 6 and Figure 15
Figure 17 through to Figure 22: modified titles
Table 9: Ordering information: updated table and removed order code
RHF43BK-01V.
Replaced package name with “Flat-8S” instead of “Flat-8”
Added marker to show the position of pin 1 on package silhouette, pinout and drawing.
Updated Features
Updated Table 1: Device summary
Updated note concerning products in die form and QML-Q versions on the cover page.
Table 2: Absolute maximum ratings (AMR): transferred radiation information to
Table 6: Radiations.
Table 8: updated dimension "L"
Added Section 3: Radiations
Updated Section 6: Ordering information
Added Section 7: "Other information"
Replaced Flat-8S silhouette, pinout, and package with Flat-8 silhouette, pinout, and package.
DS5258 - Rev 14 page 17/22
Date
06-Apr-2016
05-Dec-2017
16-Apr-2018
RHF43B
Revision
12
13
14
Changes
Updated document layout
Table 1: "Device summary": updated footnote 1, SMD = standard microcircuit drawing.
Updated the description in cover page.
Deleted EPPL parameter in the Table 1: "Device summary".
Updated figure on the cover page.
DS5258 - Rev 14 page 18/22
RHF43B
Contents
Contents
DS5258 - Rev 14 page 19/22
RHF43B
List of tables
List of tables
/2 (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . 3
/2 (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . 4
DS5258 - Rev 14 page 20/22
RHF43B
List of figures
List of figures
DS5258 - Rev 14 page 21/22
RHF43B
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DS5258 - Rev 14 page 22/22
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