STMicroelectronics VNH9013Y Datasheet
تبلیغات
تبلیغات
VNH9013Y
Automotive integrated H-bridge
Datasheet
-
production data
Features
PowerSSO-36 TP
Description
The device is an automotive integrated H-bridge intended for a wide range of automotive applications driving DC motors. The device incorporates a dual channel and two single channel MOSFETs. The device is designed using
STMicroelectronics ® well known and proven proprietary VIPower ® M0-S9 technology that allows to integrate in a package four different channels in H-bridge topology.
This package, specifically designed for the harsh automotive environment offers improved thermal performance thanks to exposed die pads.
Moreover, its fully symmetrical mechanical design allows superior manufacturability at board level.
Type R
DS(on)
VNH9013Y
13 m typ
(per leg)
I out
40
(1)
V ccmax
80 V
1. Max current to be set according to the wires capability
2. Per leg: sum of the two BV dss
V
CC
(HSD + LSD);
> 40 V whole bridge must be switched off;
(2)
AEC-Q100 qualified
Maximum V
CC voltage: 80 V
10 V compatible inputs
R
DS(on)
per leg: 13 m Ω typical
Embedded thermal sensor: -8.1 mV/°K
Very low stray inductance in power line
Table 1. Device summary
Order codes
Package
Tube
PowerSSO-36 TP VNH9013Y
Tape and reel
VNH9013YTR
January 2017
This is information on a product in full production.
DocID027860 Rev 6
www.st.com
Contents
Contents
VNH9013Y
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PowerSSO-36 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal calculation in transient mode . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PowerSSO-36 TP package information . . . . . . . . . . . . . . . . . . . . . . . . . . 18
PowerSSO-36 TP packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
PowerSSO-36 marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DocID027860 Rev 6
VNH9013Y
List of tables
List of tables
Thermal calculation in clockwise and anti-clockwise operation in steady-state mode . . . . 13
DocID027860 Rev 6
3
List of figures
List of figures
VNH9013Y
thj-amb
vs PCB copper area in open box free air condition . . . . . . . . . . 13
PowerSSO-36 HSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 15
PowerSSO-36 LSD thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . 15
DocID027860 Rev 6
VNH9013Y
1
Block diagram and pin description
Block diagram and pin description
Figure 1. Block diagram
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Figure 2. Configuration diagram
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DocID027860 Rev 6
22
Block diagram and pin description
Pin number
1
2, 8, 9
3, 4, 5, 6, 7
10
11, 12, 13, 14, 15, 16
17
18
19
20
21, 22, 23, 24, 25, 26
27
28, 29, 35
30, 31, 32, 33, 34
36
Table 2. Pin definitions and functions
Symbol Function
Gate 4
Drain 4
Source 4
Drain 2
Source 2
Gate 2
TSA+
TSK-
Gate 1
Source 1
Drain 1
Drain 3
Source 3
Gate 3
Gate of the LSD 4
Drain of the LSD 4
Source of the LSD 4
Drain of the HSD 2
Source of the HSD 2
Gate of the HSD 2
Thermal sensor anode
Thermal sensor cathode
Gate of the HSD 1
Source of the HSD 1
Drain of the HSD 1
Drain of the LSD 3
Source of the LSD 3
Gate of the LSD 3
VNH9013Y
DocID027860 Rev 6
VNH9013Y Electrical specifications
2.1 Absolute maximum rating
Table 3. Absolute maximum rating
Symbol Parameter Value
V
CC
I max
V
GS_max
I
Pulse_max
Supply voltage (whole bridge switched off)
Maximum output current (continuous) at T
C
= 150 °C
Maximum gate source voltage
Maximum Single Pulse output current
V
ESD
Electrostatic discharge HBM (JDEC 22 A-114 F)
– DRAIN HS
– DRAIN LS
– GATE HS
– GATE LS
– K+
– K-
T j
T c
T
STG
I
S
Junction operating temperature
Case operating temperature
Storage temperature
Diode continuous forward current
1. Pulse duration = 20 ms (see Figure 3
).
80
40
18
80 (1)
4000
4000
1000
1000
750
750
175
-40 to 150
-55 to 150
TBD
°C
°C
°C
A
V
A
V
A
V
Figure 3. Single pulse maximum current
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DocID027860 Rev 6
22
Electrical specifications VNH9013Y
Note:
Values specified in this section are for V
CC values are referred to T j
= 7 V up to 28 V; -40 °C < T
= 25 °C, unless otherwise specified.
j
< 150 °C, typical
Table 4. Power off
Symbol Parameter
V
(BR)DSS
I
I
DSS
GSS
Drain-source breakdown voltage for HSD and LSDs
I
D
= 10 mA; V
GS
= 0 V
Zero gate voltage drain current (V
GS
= 0 V)
V
DS
= 28 V;
-40 °C < T j
< 150 °C
V
DS
= 28 V; T j
= 25 °C
Gate-source leakage current
(V
DS
= 0 V)
V
GS
= ±10 V; T j
= 25 °C
40 — V
— 100 µA
— 10 µA
— ±100 nA
Table 5. Power on
Symbol Parameter
V
GS(th)
Gate threshold voltage dV
GS(th)
/dT (1)
Gate threshold voltage temperature derating
V
DS
T j
= V
GS
= 25 °C
; I
D
= 1 mA;
V
DS
= V
GS
; I
D
= 1 mA
R
R
DS(on)_HS
DS(on)_LS
Static drain-source on resistance
Static drain-source on resistance
V
GS
= 10 V; I
D
= 6 A; T j
= 25 °C
V
GS
T j
= 10 V; I
= 150 °C
D
= 6 A;
V
GS
= 10 V; I
D
= 6 A; T j
= 25 °C
V
GS
T j
= 10 V; I
= 150 °C
D
= 6 A;
1. Guaranteed by design.
2
-5.8
4 V mV/°C
6.0
m Ω
11.3
m Ω
7.8
m Ω
15.3
m Ω
Table 6. Dynamic
Symbol Parameter
C iss_HS
C oss_HS
C rss_HS
C iss_LS
C oss_LS
C rss_LS
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
V
GS
= 25 V; f = 1 MHz;
= 0 V
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
V
GS
= 25 V; f = 1 MHz;
= 0 V
Typ.
Unit
— 2600 —
—
—
383
165
—
—
— 1750 —
—
—
257
125
—
— pF pF pF pF pF pF
are guaranteed by design.
DocID027860 Rev 6
VNH9013Y
Note:
Electrical specifications
Table 7. Gate resistance
Symbol Parameter
R
G_HS
R
G_LS
Gate resistance HS
Gate resistance LS
V
DD
= 15 V; f gate
= 1 MHz
—
—
Typ.
Unit
7
4.7
—
—
Ω
Ω
are guaranteed by design.
Table 8. Source drain diode
Symbol Parameter conditions Min.
V
SD
(1)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
T j
= 6 A; V
= 25 °C
GS
= 0 V; t rr
(2)
Q rr
(3)
I
1. Pulse width limited by safe operating area.
2. Guaranteed by design.
3. Parameters guaranteed by design.
I
SD
V
= 6 A; di/dt = 100 A/µs;
DD
= 15 V; T j
= 25 °C
—
—
—
—
0.75
40
20
1
1.1
V ns nC
A
Symbol Parameter
Table 9. Switching on HSD
Test Min. Unit t d(on) t r
Q g
(1)
Q gs
Q
Turn on delay time
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
1. Parameters guaranteed by design.
V
DD
V
GS
= 15 V; I
= 10 V
D
= 6 A; R
G
= 4.7 Ω ;
V
DD
= 15 V; I
D
= 6 A; V
GS
= 10 V
)
—
—
—
—
—
44
85
45
8
8
—
—
—
—
— ns ns nC nC nC
Table 10. Switching on LSD
Symbol Parameter Test Min. Unit t d(on) t r
Q g
(1)
Q gs
Q
Turn on delay time
Rise time
Total gate charge
Gate-source charge
Gate-drain charge
1. Parameters guaranteed by design.
V
DD
V
GS
= 15 V; I
= 10 V
D
= 6 A; R
G
= 4.7 Ω ;
V
DD
= 15 V; I
D
= 6 A; V
)
GS
= 10 V
—
—
—
—
—
40
100
40
4.9
6.2
—
—
—
—
— ns ns nC nC nC
DocID027860 Rev 6
22
Electrical specifications VNH9013Y
Table 11. Switching off HSD
Symbol Parameter Test Min. Unit t d(off) t f
Turn-off delay time
Fall time
V
DD
V
GS
= 15 V; I
D
= 6 A; R
G
= 4.7
= 10 V (see
)
Ω ;
—
—
114
27
—
— ns ns
Table 12. Switching off LSD
Symbol Parameter Test Min. Unit t d(off) t f
Turn-off delay time
Fall time
V
DD
V
GS
= 15 V; I
D
= 6 A; R
G
= 4.7
= 10 V (see
)
Ω ;
—
—
83
25
—
— ns ns
Symbol Parameter
Table 13. Thermal sensor
Test Min. Unit
S
V
F
F
(1)
Chain diode forward voltage
Chain temperature coefficient
1. Parameters guaranteed by design.
T j
= 25 °C; I
F
= 250 µA
-40 °C < T j
< 175 °C; I
F
= 250 µA
680 720
-2
760 mV mV/°K
Figure 4. Gate charge test circuit
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DocID027860 Rev 6
VNH9013Y Electrical specifications
Figure 5. Test circuit for inductive load switching and diode recovery times
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DocID027860 Rev 6
22
Package and PCB thermal data
3 Package and PCB thermal data
3.1 PowerSSO-36 thermal data
Figure 7. PowerSSO-36™ PC board
VNH9013Y
DocID027860 Rev 6
("1($'5
VNH9013Y Package and PCB thermal data
Figure 8. Chipset configuration
5WK$
&KLS
5WK$% 5WK$&
&KLS
5WK%
&KLS
5WK&
5WK%&
Figure 9. Auto and mutual R thj-amb
vs PCB copper area in open box free air condition
3.1.1 Thermal calculation in clockwise and anti-clockwise operation in steady-state mode
Table 14. Thermal calculation in clockwise and anti-clockwise operation in steadystate mode
HS
A
HS
B
LS
A
LS
B
ON
OFF
OFF
ON
OFF
ON
ON
OFF
T jHSAB
P dHSA
x R thHS
+
P dLSB
x R thHSLS
+
T amb
P dHSB
x R thHS
+
P dLSA
x R thHSLS
+
T amb
T jLSA
P dHSA
P dLSD
x R thLSLS
T amb
x R thHSLS
+
+
P dHSB
P dLSA
x R thLS
T amb
x R thHSLS
+
+
T jLSB
P dHSA
P dLSB
x R thLS
T amb
x R thHSLS
+
+
P dHSB
P dLSA
x R thLSLS
T amb
x R thHSLS
+
+
DocID027860 Rev 6
22
Package and PCB thermal data
3.1.2
3.1.3
3.1.4
VNH9013Y
Thermal resistance definitions (values according to the PCB heatsink area)
RthHS = RthHSA = RthHSB = high side chip thermal resistance junction to ambient
(HSA or HSB in ON state)
RthLS = RthLSA = RthLSB = low side chip thermal resistance junction to ambient
RthHSLS = RthHSALSB = RthHSBLSA = mutual thermal resistance junction to ambient between high side and low side chips
RthLSLS = RthLSALSB = mutual thermal resistance junction to ambient between low side chips
Thermal calculation in transient mode
(a)
TjHSAB = ZthHS x PdHSAB + ZthHSLS x (PdLSA + PdLSB) + Tamb
TjLSA = ZthHSLS x PdHSAB + ZthLS x PdLSA + ZthLSLS x PdLSB + Tamb
TjLSB = ZthHSLS x PdHSAB + ZthLSLS x PdLSA + ZthLS x PdLSB + Tamb
Single pulse thermal impedance definitions (values according to the
PCB heatsink area)
ZthHS = high side chip thermal impedance junction to ambient
ZthLS = ZthLSA = ZthLSB = low side chip thermal impedance junction to ambient
ZthHSLS = ZthHSABLSA = ZthHSABLSB = mutual thermal impedance junction to ambient between high side and low side chips
ZthLSLS = ZthLSALSB = mutual thermal impedance junction to ambient between low side chips
Equation 1: pulse calculation formula a. Calculation is valid in any dynamic operating condition. P d
values set by user.
DocID027860 Rev 6
VNH9013Y Package and PCB thermal data
Figure 10. PowerSSO-36 HSD thermal impedance junction ambient single pulse
Figure 11. PowerSSO-36 LSD thermal impedance junction ambient single pulse
DocID027860 Rev 6
22
Package and PCB thermal data
Figure 12. Thermal fitting model of an H-bridge in PowerSSO-36
VNH9013Y
Area/island (cm
2
)
Table 15. Thermal parameters
(1)
FP 2
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R8 (°C/W)
R9 (°C/W)
R10 (°C/W)
R11 (°C/W)
R13 (°C/W)
R14 (°C/W)
R15 (°C/W)
R16 (°C/W)
R17 (°C/W)
R18 (°C/W)
R19 (°C/W)
12
37
41
50
37
41
50
2.8
73
73
53
34
2.4
2.8
12
2.4
4
14
50
8 4L
70
70
45
10
32
4 4 2
10
22
8
9
26 21 8
10 10 8
10
35
30
31
35
30
35
20
30
10
31 20 15
10
35
20
20
8
30
10
15
70
70
45
50
50
35
DocID027860 Rev 6
VNH9013Y Package and PCB thermal data
Table 15. Thermal parameters
(1)
(continued)
Area/island (cm
2
) FP 2 8 4L
C3 (W·s/°C)
C4 (W·s/°C)
C5 (W·s/°C)
0.015
0.1
0.4
0.8
3
0.015
0.015
0.05
0.4
1
0.4
1.2
0.3
1.5
4 6 15
C10 (W·s/°C)
C11 (W·s/°C)
0.3
0.8
4
0.015
1 1 1.5
5 6 15
0.05
0.3
C15 (W·s/°C)
C16 (W·s/°C)
0.8
4
1
5
1. The blank space means that the value is the same as the previous one.
1
6
1.5
15
DocID027860 Rev 6
22
Package information VNH9013Y
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
Figure 13. PowerSSO-36 TP package outline
DocID027860 Rev 6
("1($'5
VNH9013Y
Symbol
X3
Y3
Z1
Z2
Y1
X2
Y2
O
Q
S
T
U
X1
H h k
L
M
N e e3
F
G
D
E b c
A
A2 a1
Table 16. PowerSSO-36 TP mechanical data
Millimeters
Typ.
Min.
2.15
2.15
0
0.18
0.23
10.10
7.4
0.5
8.5
2.3
Package information
Max.
2.47
2.40
0.1
0.36
0.32
10.50
7.6
10.1
0 deg
0.6
0.1
10.5
0.4
8 deg
1
10 deg
4.3
1.2
0.8
2.9
3.65
1.0
1.85
3
1.85
3
4.7
3
2.35
3.5
2.35
3.5
5.2
3.5
0.4
0.4
DocID027860 Rev 6
22
Package information VNH9013Y
Figure 14. PowerSSO-36 TP tube shipment (no suffix)
C
B
Base Qty
Bulk Qty
Tube length (±0.5)
A
B
C (±0.1)
49
1225
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 15. PowerSSO-36 TP tape and reel shipment (suffix “TR”)
Reel dimensions
Base Qty
Bulk Qty
A (max)
B (min)
C (±0.2)
F
G (+2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (±0.1)
24
4
P 12
D (±0.05) 1.55
D1 (min)
F (±0.1)
K (max)
P1 (±0.1)
1.5
11.5
2.85
2
All dimensions are in mm.
End
Top cover tape
No components Components No components
500mm min 500mm min
Empty components pockets sealed with cover tape.
Start
User direction of feed
DocID027860 Rev 6
VNH9013Y
4.3 PowerSSO-36 marking information
Figure 16. PowerSSO-36 marking information
Package information
.BSLJOHBSFB
4QFDJBMGVODUJPOEJHJU
&OHJOFFSJOHTBNQMF
CMBOL$PNNFSDJBMTBNQMF
Note:
Note:
1PXFS4405017*&8
OPUJOTDBMF
("1($'5
Parts marked as "&" are not yet qualified and therefore not approved for use in production.
ST is not responsible for any consequences resulting from such use. In no event will ST be liable for the customer using any of these engineering samples in production. ST’s Quality department must be contacted prior to any decision to use these engineering samples to run a qualification activity.
Commercial Samples: fully qualified parts from ST standard production with no usage restrictions.
DocID027860 Rev 6
22
Revision history VNH9013Y
Date
14-Oct-2015
26-Apr-2016
20-Jun-2016
13-Jul-2016
28-Nov-2016
17-Jan-2017
Revision
Table 17. Document revision history
Changes
1
2
3
4
5
6
Initial release
Updated following tables:
– Table 4: Power off
– Table 5: Power on
– Table 6: Dynamic
– Table 7: Gate resistance
– Table 8: Source drain diode
– Table 9: Switching on HSD
– Table 10: Switching on LSD
– Table 11: Switching off HSD
– Table 12: Switching off LSD
– Table 13: Thermal sensor
Updated
Table 3: Absolute maximum rating
,
Table 5: Power on,
Table 6: Dynamic, Table 7: Gate resistance, Table 8: Source drain diode, Table 9: Switching on HSD, Table 10: Switching on LSD
and
Table 13: Thermal sensor.
Document status changed from target to preliminary data.
Updated
Table 4: Power off
Removed table thermal data on page 8.
Updated
Section 4: Package information
.
Added
Section 3: Package and PCB thermal data
.
Minor text changes.
Updated
Updated following tables:
–
Table 3: Absolute maximum rating
–
–
–
–
–
–
–
–
DocID027860 Rev 6
VNH9013Y
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on
ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2017 STMicroelectronics – All rights reserved
DocID027860 Rev 6 23/23
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