STM32L162VD-X Electrical characteristics
The parameters given in
Table 15 are based on characterization results, unless otherwise
specified.
Table 14. Embedded internal reference voltage calibration values
Calibration value name Description Memory address
VREFINT_CAL
Raw data acquired at temperature of 30 °C ±5 °C
V
DDA
= 3 V ±10 mV
0x1FF8 00F8 - 0x1FF8 00F9
V
V
A
T
T
Symbol
REFINT out
(1)
T
I
VREF_MEAS
VREF_MEAS
T
REFINT
VREFINT
Coeff
(3)
A
Coeff
(3)
V
DDCoeff
(3)
S_vrefint
(3)
ADC_BUF
(3)
Table 15. Embedded internal reference voltage
Parameter
Internal reference voltage
Internal reference current consumption
Internal reference startup time
Conditions
– 40 °C < T
-
-
J
Min Typ
< +110 °C 1.202 1.224
V
DDA
V
and V
REF+
REFINT
voltage during
factory measure
-
Accuracy of factory-measured V
REF value
(2)
Temperature coefficient
Including uncertainties due to ADC and
V
DDA
/V
REF+
values
–40 °C < T
J
< +110 °C
Long-term stability 1000 hours, T= 25 °C
Voltage coefficient 3.0 V < V
DDA
< 3.6 V
ADC sampling time when reading the internal reference voltage
Startup time of reference voltage buffer for ADC
-
-
-
-
2.99
-
-
-
-
4
-
1.4
2
3
-
25
-
-
-
-
I
BUF_ADC
(3)
I
VREF_OUT
(3)
C
VREF_OUT
(3)
Consumption of reference voltage buffer for ADC
VREF_OUT output current
VREF_OUT output load
(4)
-
-
-
-
-
-
13.5
-
-
I
LPBUF
(3)
Consumption of reference voltage buffer for VREF_OUT and COMP
730
V
REFINT_DIV1
(3)
V
REFINT_DIV2
(3)
V
REFINT_DIV3
(3)
1/4 reference voltage
1/2 reference voltage
3/4 reference voltage -
-
24
49
74
25
50
75
1. Guaranteed by test in production.
2. The internal V
REF
value is individually measured in production and stored in dedicated EEPROM bytes.
3. Guaranteed by characterization results.
4. To guarantee less than 1% VREF_OUT deviation.
Max
1.242
2.3
3
3.01
±5
100
1000
26
51
76
Unit
V
µA ms
V mV ppm/°C ppm
2000 ppm/V
-
10
25
1
50
1200
V
µs
µs
µA
µA pF nA
%
REFINT
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