STMicroelectronics STF9NM60N Datasheet
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STD9NM60N, STF9NM60N, STP9NM60N
Datasheet
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in
DPAK, TO-220FP and TO-220 packages
TAB
TO-220 1
2
3
D(2, TAB)
G(1)
Features
TAB
1
2
DPAK
3
TO-220FP
1
2
3
Order code V
DS
R
DS(on)
max.
STD9NM60N
STF9NM60N 600 V 0.745 Ω
STP9NM60N
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
I
D
6.5 A
Package
DPAK
TO-220FP
TO-220
S(3)
Product status link
STD9NM60N
STF9NM60N
STP9NM60N
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
DS6986 - Rev 2 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STD9NM60N, STF9NM60N, STP9NM60N
Electrical ratings
Electrical ratings
Symbol
Table 1. Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
P
TOT dv/dt
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
Drain current (continuous) at T
C
Drain current (pulsed)
= 25 °C
= 100 °C
V
ISO
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; T c
= 25 °C)
Operating junction temperature range T j
T stg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. I
SD
≤ 6.5 A, di/dt ≤ 400 A/μs,, V
DD
= 80% V
(BR)DSS
.
DPAK, TO-220
Value
600
±25
6.5
4
26
70
15
-55 to 150
TO-220FP
26
25
2.5
°C
Symbol Parameter
R thj-case
R thj-amb
R thj-pcb
Thermal resistance junction-case
Thermal resistance junction-ambient
Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4, 2 Oz copper board.
Table 2. Thermal data
DPAK
1.79
Value
TO-220
62.5
TO-220FP
5
50
Unit
°C/W
Unit
A
A
W
V/ns
V
V
A kV
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse width limited by T j
Max)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
2.5
115
Unit
A mJ
DS6986 - Rev 2 page 2/24
2
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
I
D
= 1 mA, V
Test conditions
GS
= 0 V
I
DSS
Zero gate voltage drain current
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V, T
C
= 125 °C
V
R
I
GSS
GS(th)
DS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on resistance
V
V
V
DS
DS
GS
= 0 V, V
GS
= V
GS
, I
D
= 10 V, I
1. Defined by design, not subject to production test.
D
= ±20 V
= 250 µA
= 3.25 A
Min.
600
2
Typ.
3
0.63
Max.
1
100
100
4
0.745
nA
V
Ω
Unit
V
µA
µA
Table 5. Dynamic
Symbol
C iss
C oss
Parameter
Input capacitance
Output capacitance
Test conditions Min.
Typ.
452
30
Max.
Unit
V
DS
= 50 V, f = 1 MHz, V
GS
= 0 V pF
C rss
C oss eq.
Reverse transfer capacitance
Equivalent output capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V -
1.45
79 pF
R g
Q g
Q gs
Q gd
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz, I
V
DD
= 480 V, I
(see Figure 17. Test circuit for gate charge behavior
)
D
= 0 A
D
= 6.5 A, V
GS
= 0 to 10 V
-
4.8
17.4
3
9.7
-
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss
when V
DS
increases from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 480 V, I
D
= 6.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
)
Min.
-
Typ.
28
23
52.5
26.7
Max.
-
Unit ns
DS6986 - Rev 2 page 3/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
I
I
SD
SDM
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Test conditions
V
SD
I
I t
Q rr rr
RRM t
Q rr rr
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 6.5 A, V
GS
= 0 V
I
SD
= 6.5 A, di/dt = 100 A/µs
V
DD
= 60 V (see
Figure 18. Test circuit for inductive load switching and diode recovery times
)
I
SD
= 6.5 A, di/dt = 100 A/µs
V
DD
= 60 V (see
Figure 18. Test circuit for inductive load switching and diode recovery times
)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Min.
-
-
-
-
264
1.9
14.6
324
2.3
14.2
Typ.
Max.
6.5
26
1.6
Unit
A
A ns
μC
A
V ns
μC
DS6986 - Rev 2 page 4/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for DPAK
10 -1
10 -2
10 -1 10 2
Figure 3. Safe operating area for TO-220FP
10 -1
10 -2
10 -1 10 2
Figure 5. Safe operating area for TO-220
AM08162v1
I D
(A)
10 -1
10 -2
10 -1
Op er ati on
Lim ite d
in
th is by m ax are a
R
DS is
(o n)
Tj=150°C
Tc=25°C
S ingle puls e
10 2 DS (V)
10µs
100µs
1ms
10ms
Figure 2. Thermal impedance for DPAK
K
GC20460
10 0
10 -1
10 -2
10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Thermal impedance for TO-220FP
K GC20940
10 -1
10 -2
10 -3
10 -4 10 -3 10 -2 10 -1 10 0 t p
(s)
Figure 6. Thermal impedance for TO-220
DS6986 - Rev 2 page 5/24
I D
(A)
12
10
8
6
4
2
0
0
Figure 7. Output characterisics
AM08165v1
V
GS
=10V
6V
5V
5 10 15 20 25 30 V DS (V)
Figure 9. Gate charge vs gate-source voltage
V GS
AM08167v1 V
DS
12
V DS V
DD
=480V
I D =6.5A
500
10
400
8
300
6
200
4
2
100
0
0 5 10 15 Q g
0
C
(pF)
Figure 11. Capacitance variations
AM08169v1
1000
Cis s
100
Cos s
10
1
0.1 1 10 100
Crs s
V
DS
(V)
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
10
8
6
4
2
0
0
I D
(A)
12
Figure 8. Transfer characteristics
AM08166v1
V DS =20V
2 4 6 8 10 V GS (V)
Figure 10. Static drain-source on resistance
AM08168v1
R DS (on)
(Ω)
0.66
V GS =10V
0.65
0.64
0.63
0.62
0.61
0.60
0.59
0 1 2 3 4 5 6 I D (A)
Figure 12. Output capacitance stored energy
AM08170v1
E oss
(µJ)
3.5
3
2.5
2
I
D
=250μA
1.5
1
0.5
0
0 100 200 300 400 500 600 V
DS
(V)
DS6986 - Rev 2 page 6/24
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics curves
Figure 13. Normalized gate threshold voltage vs temperature
AM08171v1
V GS (th)
(norm)
1.10
I
D
=250µA
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 T
J
(°C)
Figure 14. Normalized on resistance vs temperature
AM08172v1
R DS (on)
(norm)
2.1
1.9
1.7
I
D
=3.25A
1.5
3
0.9
0.5
-50 0
Figure 15. Normalized V
(BR)DSS
vs temperature
AM08173v1
V (BR)DSS
(norm)
T J (°C)
I
D
=1mA
1.03
1.01
0.99
0.97
0.95
0.93
-50 -25 0 25 50 75 100 T
J
(°C)
DS6986 - Rev 2 page 7/24
STD9NM60N, STF9NM60N, STP9NM60N
Test circuits
3
Test circuits
Figure 16. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 18. Test circuit for inductive load switching and diode recovery times
Figure 17. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 19. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 20. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 21. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS6986 - Rev 2 page 8/24
4
STD9NM60N, STF9NM60N, STP9NM60N
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS6986 - Rev 2 page 9/24
4.1
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information
DPAK (TO-252) type A package information
Figure 22. DPAK (TO-252) type A package outline
DS6986 - Rev 2
0068772_A_25 page 10/24
DS6986 - Rev 2
Dim.
c2
D
D1
E
E1 e e1
A
A1
A2 b b4 c
L2
L4
R
V2
H
L
(L1)
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type A package information
Table 8. DPAK (TO-252) type A mechanical data mm
Typ.
9.35
1.00
2.60
0.65
0.60
4.95
6.40
4.60
2.159
4.445
0.64
5.20
0.45
0.48
6.00
Min.
2.20
0.90
0.03
5.10
4.70
2.286
4.572
2.80
0.80
0.20
0°
10.10
1.50
3.00
0.95
1.00
5.25
6.60
4.80
2.413
4.699
0.90
5.40
0.60
0.60
6.20
Max.
2.40
1.10
0.23
8° page 11/24
4.2
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
DPAK (TO-252) type C2 package information
Figure 23. DPAK (TO-252) type C2 package outline
DS6986 - Rev 2
0068772_C2_25 page 12/24
DS6986 - Rev 2
Dim.
L
L1
L2
L3
L4
L6
θ1
θ2
V2 c2
D
D1
E
E1 e
H
A
A1
A2 b b4 c
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
Table 9. DPAK (TO-252) type C2 mechanical data
0.72
5.13
0.47
0.47
6.00
Min.
2.20
0.90
0.00
5.10
6.50
5.20
2.186
9.80
1.40
mm
Typ.
2.30
1.01
5.33
6.10
6.60
2.286
10.10
1.50
2.90 REF
0.90
0.60
5°
5°
0°
0.51 BSC
0.80
1.80 BSC
7°
7°
1.00
9°
9°
8°
0.85
5.46
0.60
0.60
6.20
Max.
2.38
1.10
0.10
5.60
6.70
5.50
2.386
10.40
1.70
1.25
page 13/24
DS6986 - Rev 2
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) type C2 package information
Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25 page 14/24
4.3
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information
DPAK (TO-252) packing information
Figure 25. DPAK (TO-252) tape outline
T
Top cover tape
10 pitches cumulative tolerance on tape +/- 0.2 mm
P0 D P2
F
E
W
B1
K0
For machine ref. only including draft and radii concentric around B0
B0
A0 P1
User direction of feed
D1
User direction of feed
R
Bending radius
AM08852v1
DS6986 - Rev 2 page 15/24
DS6986 - Rev 2
Dim.
D1
E
F
K0
P0
A0
B0
B1
D
P1
P2
R
T
W
A
D
B
STD9NM60N, STF9NM60N, STP9NM60N
DPAK (TO-252) packing information
Figure 26. DPAK (TO-252) reel outline
T
40mm min. access hole at slot location
C
N
G measured at hub
Full radius
Tape slot in core for tape start
2.5mm min.width
AM06038v1
2.55
3.9
7.9
1.9
40
0.25
15.7
1.5
1.5
1.65
7.4
Table 10. DPAK (TO-252) tape and reel mechanical data
Tape Reel mm
Dim.
Min.
6.8
10.4
Max.
7
10.6
12.1
1.6
C
D
A
B
G
N
T
Min.
1.5
12.8
20.2
16.4
50 1.85
7.6
2.75
4.1
8.1
2.1
0.35
16.3
Base qty.
Bulk qty.
mm
Max.
330
13.2
18.4
22.4
2500
2500 page 16/24
4.4
STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information
TO-220FP package information
Figure 27. TO-220FP package outline
DS6986 - Rev 2
7012510_Rev_12_B page 17/24
DS6986 - Rev 2
Dim.
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
D
E
A
B
F
F1
STD9NM60N, STF9NM60N, STP9NM60N
TO-220FP package information
Table 11. TO-220FP package mechanical data mm
Typ.
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
16
28.6
9.8
2.9
15.9
9
3
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
page 18/24
4.5
STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information
TO-220 type A package information
Figure 28. TO-220 type A package outline
DS6986 - Rev 2
0015988_typeA_Rev_21 page 19/24
DS6986 - Rev 2
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STD9NM60N, STF9NM60N, STP9NM60N
TO-220 type A package information
Table 12. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 20/24
5
STD9NM60N, STF9NM60N, STP9NM60N
Ordering information
Ordering information
Order code
STD9NM60N
STF9NM60N
STP9NM60N
Table 13. Order codes
Marking
9NM60N
Package
DPAK
TO-220FP
TO-220
Packing
Tape and reel
Tube
DS6986 - Rev 2 page 21/24
STD9NM60N, STF9NM60N, STP9NM60N
Revision history
Date
20-Oct-2010
25-Sep-2018 2
Table 14. Document revision history
Version
1
Changes
First release.
Removed maturity status indication from cover page. The document status is production data.
Updated Section 4 Package information
.
Minor text changes.
DS6986 - Rev 2 page 22/24
STD9NM60N, STF9NM60N, STP9NM60N
Contents
Contents
DS6986 - Rev 2 page 23/24
STD9NM60N, STF9NM60N, STP9NM60N
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© 2018 STMicroelectronics – All rights reserved
DS6986 - Rev 2 page 24/24
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