STGP30IH65DF
Datasheet
Trench gate field-stop 650 V, 30 A, soft-switching IH series IGBT in a TO
‑
220 package
TAB
G(1)
TO-220
1
2
3
C(2, TAB)
E(3)
NG1E3C2T
Product status link
STGP30IH65DF
Product summary
Order code
Marking
Package
Packing
STGP30IH65DF
G30IH65DF
TO-220
Tube
Features
• Designed for soft commutation only
• Maximum junction temperature: T
J
= 175 °C
• V
CE(sat)
= 1.55 V (typ.) @ I
C
= 30 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Low drop voltage freewheeling co-packaged diode
• Positive V
CE(sat)
temperature coefficient
Applications
• Induction heating
• Resonant converters
• Microwave ovens
Description
The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching applications.
DS13305 - Rev 1 - April 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STGP30IH65DF
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
CES
C
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Value
650
60
30
I
CP
V
I
F
(1)
GE
Gate-emitter voltage
Transient gate-emitter voltage (t p
≤ 10 μs)
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
90
±20
±30
30
15
I
FP
(1)
P
TOT
T
STG
T
J
Pulsed forward current
Total power dissipation at T
C
Storage temperature range
= 25 °C
Operating junction temperature range
90
180
- 55 to 150
- 55 to 175
1. Pulse width limited by maximum junction temperature. Defined by design, not subjected to production test.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.83
2.08
62.5
Unit
°C/W
A
W
°C
Unit
V
A
A
V
V
DS13305 - Rev 1 page 2/15
2
STGP30IH65DF
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Symbol
V
(BR)CES
V
CE(sat)
V
F
V
GE(th)
I
CES
I
GES
Parameter
Collector-emitter breakdown voltage
Table 3. Static characteristics
Test conditions
V
GE
= 0 V, I
C
= 250 μA
Collector-emitter saturation voltage
Forward on-voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
V
GE
= 15 V, I
C
= 30 A
V
GE
= 15 V, I
C
= 30 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 30 A, T
J
= 175 °C
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
I
F
= 15 A, T
J
= 175 °C
I
F
= 30 A
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ±20 V
Min.
Typ.
Max.
Unit
650 V
5
1.50
1.40
2.00
6
1.55
2.05
1.75
1.80
1.65
2.35
V
V
7
25
V
µA
±250 nA
Symbol
C ies
C oes
C res
Q g
Q ge
Q gc
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Table 4. Dynamic characteristics
Test conditions
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
V
CC
= 520 V, I
C
= 30 A, V
GE
= 0 to 15 V
(see
Figure 23. Gate charge test circuit
)
-
-
-
Min.
Typ.
Max.
Unit
1490 -
-
82
39
-
pF
80
11
39
-
-
nC
Symbol t d(off) t f t d(off) t f
Table 5. IGBT switching characteristics (inductive load)
Parameter
Turn-off delay time
Current fall time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 22 Ω
(see
Figure 21. Test circuit for inductive load switching
)
V
CC
= 400 V, I
C
= 30 A,
V
GE
= 15 V, R
G
= 22 Ω, T
J
= 175 °C
(see
Figure 21. Test circuit for inductive load switching
)
Min.
Typ.
Max.
Unit
200 -
-
-
33
224
88 -
-
ns ns ns
DS13305 - Rev 1 page 3/15
STGP30IH65DF
Electrical characteristics
Symbol
E off
(1)
Table 6. IGBT switching characteristics (capacitive load)
Parameter
Turn-off switching energy
Test conditions
V
CC
= 320 V, R
G
= 10 Ω,
I
C
= 30 A, L = 100 μH,
C snub
= 22 nF
(see
Figure 22. Test circuit for snubbed inductive load switching )
V
CC
= 320 V, R
G
= 10 Ω,
I
C
= 30 A, L = 100 μH,
C snub
= 22 nF, T
J
= 175 °C
(see
Figure 22. Test circuit for snubbed inductive load switching )
Min.
Typ.
Max.
Unit
-
123
298 -
-
μJ
1. Including the tail of the collector current.
DS13305 - Rev 1 page 4/15
STGP30IH65DF
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
P
TOT
(W)
GADG160320201547PDT
160
120
V
GE
≥ 15 V
T
J
≤ 175 °C
80
40
0
25 75 125 175 T
C
(°C)
Figure 3. Output characteristics (T
J
= 25 °C)
I
C
(A)
80
70
60
50
40
30
20
10
0
0
V
GE
= 15V
1 2
GADG160320201548OC25
V
GE
= 13V
V
GE
= 11V
3
V
GE
= 9V
4
V
GE
= 7V
5 V
CE
(V)
Figure 5. V
CE(sat)
vs junction temperature
V
CE(sat)
(V)
GADG160320201549VCET
V
GE
= 15 V
2.8
I
C
= 60 A
2.4
2.0
I
C
= 30 A
1.6
I
C
= 15 A
1.2
0.8
-50 0 50 100 150 T
J
(°C)
Figure 2. Collector current vs case temperature
I
C
(A)
60
GADG160320201547CCT
50
40
30
20
10
0
25 75
V
GE
≥ 15 V
T
J
≤ 175 °C
125 175 T
C
(°C)
Figure 4. Output characteristics (T
J
= 175 °C)
I
C
(A)
80
70
60
50
40
30
20
10
0
0 1
V
GE
= 15V
2
GADG160320201549OC175
3
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
4
V
GE
= 7V
5 V
CE
(V)
Figure 6. V
CE(sat)
vs collector current
V
CE(sat)
(V)
3.2
V
GE
= 15 V
GADG160320201550VCEC
T
J
= 175°C
2.8
T
J
= 25°C
2.4
2.0
T
J
= -40°C
1.6
1.2
0.8
0 15 30 45 60 75 I
C
(A)
DS13305 - Rev 1 page 5/15
STGP30IH65DF
Electrical characteristics (curves)
Figure 7. Forward bias safe operating area
I
C
(A)
GADG170320201725FSOA t p
=1µs
10 1 t p
=10µs t p
=100µs t p
=1ms
10 0
Single pulse, T
C
= 25 °C,
T
J
≤ 175 °C, V
GE
= 15 V
10 -1
10 -1 10 0 10 1 10 2
V
CE
(V)
Figure 9. Diode V
F
vs forward current
V
F
(V)
3.0
GADG160320201553DVF
T
J
= 25°C
2.5
2.0
T
J
= -40°C
T
J
= 175°C
1.5
1.0
0.5
0.0
0 10 20 30 40 50 I
F
(A)
Figure 11. Normalized V
(BR)CES
vs junction temperature
V
(BR)CES
(Norm.)
IGBT100820181016NVBR
1.08
I
C
= 250 μA
1.04
1.00
0.96
0.92
-50 0 50 100 150 T
J
(°C)
60
50
40
30
I
C
(A)
80
70
20
10
0
5
Figure 8. Transfer characteristics
V
CE
= 6 V
T
J
= 175 °C
6 7 8
GADG160320201552TCH
T
J
= 25 °C
9 10 V
GE
(V)
Figure 10. Normalized V
GE(th)
vs junction temperature
V
GE(th)
(Norm.)
1.1
IGBT100820181016NVGE
V
CE
= V
GE
1.0
0.9
0.8
0.7
0.6
-50 0
I
C
= 1 mA
50 100 150 T
J
(°C)
C
(pF)
Figure 12. Capacitance variations
GADG160320201554CVR
C ies
10 3
10 2
10 1 f = 1 MHz
10 0
10 -1 10 0 10 1 10 2
C oes
C res
V
CE
(V)
DS13305 - Rev 1 page 6/15
STGP30IH65DF
Electrical characteristics (curves)
Figure 13. Gate charge vs gate-emitter voltage
V
GE
(V)
GADG160320201555GCGE
15
V
CC
= 520 V,
I
C
= 30 A,
I
G
= 1.3 mA
12
9
6
3
0
0 20 40 60 80 Q g
(nC)
Figure 15. Switching energy vs temperature
E
(mJ)
0.8
GADG160320201556SLT
V
CC
= 400 V, I
C
= 30 A,
R
G
= 22 Ω ,V
GE
= 15 V
0.7
0.6
0.5
0.4
0.3
0 50
E off
100 150 T
J
(°C)
Figure 17. Switching times vs collector current t
(ns)
V
CC
= 400 V, R
G
GADG180320200756STC
= 22 Ω,
V
GE
= 15 V, T
J
= 175 °C t d(off)
10 2 t f
10 1
0 10 20 30 40 50 60 I
C
(A)
Figure 14. Switching energy vs collector current
E
(mJ)
GADG180320201117SLC
V
CC
= 400 V, R
G
= 22 Ω,
V
GE
= 15 V, T
J
= 175 °C
1.6
1.2
0.8
0.4
0
0
E off
15 30 45 60 I
C
(A)
Figure 16. Switching energy vs collector emitter voltage
E
(mJ)
1.0
I
C
= 30 A, R
G
= 22 Ω,
GADG180320200755SLV
V
GE
= 15 V, T
J
= 175 °C
0.9
0.8
0.7
0.6
0.5
0.4
150 250
E off
350 450 V
CE
(V)
Figure 18. Switching energy vs snubber capacitance
E
(mJ)
GADG170320201735SSC
I
C
= 30A, V
CC
= 320 V,
V
GE
= 15 V, R
G
= 10 Ω
0.4
T
J
= 175°C
0.3
0.2
T
J
= 25°C
0.1
0.0
0 20 40 60 80 100 C snub
(nF)
DS13305 - Rev 1 page 7/15
Figure 19. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
10 -1
0.2
0.1
0.01
10 -2
10 -5
Single pulse
10 -4
10 -3
0.05
0.02
Zth=k Rthj-c
δ=tp/t
10 -2 tp t
10 -1 t p
(s)
STGP30IH65DF
Electrical characteristics (curves)
Figure 20. Thermal impedance for diode
DS13305 - Rev 1 page 8/15
STGP30IH65DF
Test circuits
3
Test circuits
Figure 21. Test circuit for inductive load switching
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
AM01504v1
Figure 23. Gate charge test circuit
V
CC
R
L
P
V i
≤ V
GMAX
2200
μF
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
W
100 Ω
D.U.T.
GADG160420181048IG
Figure 22. Test circuit for snubbed inductive load switching
V
CE
Figure 24. Switching waveform
V
G
I
C t d(on) t on t r(Ion)
90%
10% t r(Voff) t cross t d(off) t off t f
90%
10%
90%
10%
AM01506v1
DS13305 - Rev 1 page 9/15
4
STGP30IH65DF
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS13305 - Rev 1 page 10/15
4.1
TO-220 type H package information
Figure 25. TO-220 type H package outline
STGP30IH65DF
TO-220 type H package information
DS13305 - Rev 1
0015988_23_H page 11/15
DS13305 - Rev 1
Dim.
e e1
H1
L
L1
L2
L3
øP
Q
Slug flatness b4 b6 b7 c
D
D1
E
A
A1
A2
A3 b b2
0.49
15.40
9.05
10.08
2.44
4.98
6.25
13.20
3.50
16.30
28.70
3.75
2.70
Table 7. TO-220 type H mechanical data
Min.
4.40
1.22
2.49
1.17
0.78
1.25
1.20
Milimeters
Typ.
4.45
2.59
1.27
13.40
3.70
16.40
28.90
3.80
2.80
0.03
15.50
9.15
10.18
2.54
5.08
6.35
STGP30IH65DF
TO-220 type H package information
2.64
5.18
6.45
13.60
3.90
1.45
0.56
15.60
9.25
10.28
16.50
29.10
3.85
2.90
0.10
1.37
0.87
1.34
1.29
1.50
Max.
4.50
1.32
2.69
page 12/15
Revision history
Date
06-Apr-2020
Version
1
Table 8. Document revision history
Changes
Initial release.
STGP30IH65DF
DS13305 - Rev 1 page 13/15
STGP30IH65DF
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1
TO-220 type H package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
DS13305 - Rev 1 page 14/15
STGP30IH65DF
IMPORTANT NOTICE – PLEASE READ CAREFULLY
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© 2020 STMicroelectronics – All rights reserved
DS13305 - Rev 1 page 15/15
