TO-247
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
1
2
3
Order code
STGW20IH125DF
STGWT20IH125DF
TAB
TO-3P
E (3)
1
2
3
STGW20IH125DF
STGWT20IH125DF
1250 V, 20 A IH series
trench gate field-stop IGBT
Datasheet
-
production data
•
•
•
•
•
•
•
•
•
Features
Designed for soft commutation only
Maximum junction temperature: T
J
= 175 °C
Minimized tail current
V
CE(sat)
= 2.0 V (typ.) @ I
C
= 15 A
Tight parameters distribution
Safe paralleling
Very low V
F
soft recovery co-packaged diode
Low thermal resistance
Lead free package
•
•
•
Applications
Induction heating
Microwave oven
Resonant converters
Description
These IGBTs are developed using an advanced proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching application.
Table 1. Device summary
Marking Package
G20IH125DF
G20IH125DF
TO-247
TO-3P
Packaging
Tube
Tube
February 2014
This is information on a product in full production.
DocID025269 Rev 2 1/17 www.st.com
17
3
4
5
1
2
Contents
Contents
STGW20IH125DF, STGWT20IH125DF
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
V
CES
I
C
I
C
I
CP
(1)
V
GE
I
F
I
F
I
FP
(1)
P
TOT
T
STG
T
J
Collector-emitter voltage (V
Pulsed collector current
Gate-emitter voltage
Pulsed forward current
Total dissipation at T
C
Storage temperature range
GE
= 25 °C
= 0)
Continuous collector current at T
Continuous collector current at T
Continuous forward current at T
Continuous forward current at T
Operating junction temperature
C
C
C
C
= 25 °C
= 100 °C
= 25 °C
= 100 °C
1.
Pulse width limited by maximum junction temperature
Value
1250
40
20
80
±20
40
20
80
259
- 55 to 150
- 55 to 175
Symbol
R thJC
R thJC
R thJA
Table 3. Thermal data
Parameter
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Value
0.58
1.47
50
Unit
°C/W
°C/W
°C/W
Unit
A
A
A
V
V
A
A
A
W
°C
°C
DocID025269 Rev 2 3/17
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
T
J
= 25 °C unless otherwise specified.
Symbol Parameter
Table 4. Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
V
GE
= 15 V, I
C
= 15 A
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 15 A
T
J
= 125 °C
V
GE
= 15 V, I
C
= 15 A
T
J
= 175 °C
V
F
Forward on-voltage
V
GE
= 15 V, I
C
= 30 A
I
F
= 15 A
I
F
= 15 A T
J
= 125 °C
I
F
= 15 A T
J
= 175 °C
I
F
= 30A
V
CE
= V
GE
, I
C
= 500 μ A V
GE(th)
Gate threshold voltage
I
I
CES
GES
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage current (V
CE
= 0)
V
V
CE
GE
= 1250 V
= ± 20 V
Min.
Typ.
Max.
Unit
1250
5
2
2.2
2.3
2.5
2.55
1.1
1.05
1
1.25
6
1.5
7
25
V
V
V
V
μ A
250 nA
Symbol
C ies
C oes
C
Q
Q
Q res g ge gc
Parameter
Table 5. Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CC
= 600 V, I
C
= 15 A,
V
GE
= 15 V, see
Figure 25
Min.
Typ.
Max.
Unit
-
-
-
-
-
-
1290
96
30.6
69
7.2
40.8
-
-
-
-
-
pF pF pF nC nC nC
4/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF Electrical characteristics
Symbol
Table 6. IGBT switching characteristics (inductive load)
Parameter Test conditions t d(off) t f
E off
(1) t d(off) t f
E off
(1)
Turn-off delay time
Current fall time
Turn-off switching losses
Turn-off delay time
Current fall time
Turn-off switching losses
V
V
CE
R
G
CE
= 600 V, I
= 600 V, I
C
= 10
Ω
, V
GE
Figure 23
= 15 A,
= 15 V, see
C
= 15 A,
R
G
= 10
Ω
, V
GE
= 15 V,
T
J
= 175 °C, see
Figure 23
1.
Turn-off losses include also the tail of the collector current.
Min.
Typ.
Max.
Unit
-
-
-
-
106
79
410
109
176
820 -
-
-
ns ns
μ J ns ns
μ J
Symbol
E off
(1)
Table 7. IGBT switching characteristics (capacitive load)
Parameter Test conditions Min.
Typ.
Max.
Unit
Turn-off switching losses
V
CC
= 900V, R
G
= 10
Ω
,
I
C
= 30 A, L = 500 μ H,
C snub
= 330 nF, see
Figure 24
V
CC
= 900V, R
G
= 10
Ω
,
I
C
= 30 A, L = 500 μ H,
C snub
= 330 nF, T
J
= 175 °C, see
Figure 24
-
163
366 -
-
μ J
1.
Turn-off losses include also the tail of the collector current.
DocID025269 Rev 2 5/17
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
Figure 2. Power dissipation vs. case temperature
GIPD161220131549FSR
P tot
(W)
V
GE
≥ 15V, T
J
≤ 175 °C
250
Figure 3. Collector current vs. case temperature
I
C
(A)
40
GIPD161220131556FSR
V
GE
≥ 15V, T
J
≤ 175 °C
35
200 30
25
150
20
100 15
50
0
0 25 50 75 100 125 150 175 T
C
( °C )
10
5
0
0 25 50 75 100 125 150 175 T
C
( °C )
Figure 4. Output characteristics (T
J
= 25°C)
GIPD161220131602FSR
I
C
(A)
V
GE
=15V 13V
70
60
50
40
11V
30
20
10
0
0 1 2 3 4
9V
5 V
CE
(V)
Figure 6. V
CE(sat)
vs. junction temperature
GIPD161220131648FSR
V
CE(sat)
(V)
3.2
V
GE
= 15V I
C
= 30A
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
-50 0 50 100
I
C
= 15A
I
C
= 7.5A
150 T
J
(
°C
)
Figure 5. Output characteristics (T
J
= 175°C)
GIPD161220131620FSR
I
C
(A)
70
V
GE
=15V
60
13V
50
40
30
20
10
0
0 1 2 3 4
11V
9V
5
7V
V
CE
(V)
Figure 7. V
CE(sat)
vs. collector current
GIPD161220131702FSR
V
CE(sat)
(V)
3.2
V
GE
= 15V
T
J
= 175
°C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
0 5
T
J
= 25
°C
10 15 20
T
J
= -40
°C
25 I
C
(
A
)
6/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF Electrical characteristics
Figure 8. Forward bias safe operating area
GIPD161220131714FSR
I
C
(A)
1 μs
10 10 μs
1
100 μs
1 ms
Single pulse
Tc= 25°C, T
J
≤
175°C
V
GE
= 15V
0.1
1 10 100 1000 V
CE
( V )
Figure 10. Diode V
F
vs. forward current
GIPD161220131729FSR
V
F
(V)
2
1.8
1.6
1.4
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
1.2
1.0
0.8
0.6
0 10 20 30 40 50 60 70 I
F
(
A
)
Figure 12. Normalized V
(BR)CES
vs. junction temperature
GIPD161220131741FSR
V
(BR)CES
(norm)
1.04
I
C
= 2mA
1.02
30
25
20
15
10
5
0
6
Figure 9. Transfer characteristics
GIPD161220131719FSR
I
C
(A)
45
V
CE
=10V
40
35
7
T
J
=175°C
8 9
T
J
=25°C
10 11 V
GE
(V)
Figure 11. Normalized V
GE(th)
vs junction temperature
GIPD281020131600FSR
V
GE(th)
(norm)
1.1
I
C
= 1mA
V
CE
= V
GE
1.0
0.9
0.8
0.7
0.6
-50 0 50 100 150 T
J
(°
C
)
Figure 13. Capacitance variation
C
(pF)
1000
GIPD161220131745FSR
C ies
100
0.98
10
C oes
C res
0.94
0.9
-50 0 50 100 150 T
J
(°
C
)
1
0.1
1 10 100 V
CE
(V)
DocID025269 Rev 2 7/17
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
Figure 14. Gate charge vs. gate-emitter voltage Figure 15. Switching loss vs collector current
GIPD171220130851FSR GIPD171220130858FSR
V
GE
(V)
E off
(μJ)
1600
V CC = 600V, V GE = 15V,
R
G
= 10Ω
16
I
C
= 15A
I
GE
= 1mA
V
CC
= 960V
1200
12
T J = 175°C
800
8
T
J
= 25°C
4
400
0
0 20 40 60 Q g
(n C )
0
0 10 20 30 I
C
(A)
Figure 16. Switching-off loss vs gate resistance Figure 17. Switching-off loss vs temperature
GIPD171220130941FSR GIPD171220130947FSR
E off
(μJ)
E off
(μJ)
1000
V
CC
= 600V, V
GE
= 15V,
I
C
= 15A
V
CC
= 600V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 15A
800
800
T
J
= 175 °C
600
600
400
400
T
J
= 25 °C
200
0 10 20 30 40 R
G
(Ω)
200
25 50 75 100 125 150 T
J
(
°C
)
Figure 18. Switching-off loss vs collectoremitter voltage
GIPD171220130956FSR
E off
(μJ)
1200
V
GE
= 15V,
R
G
= 10Ω, I
C
= 15A
Figure 19. Switching times vs. collector current t
(ns)
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, V
CC
= 600V
GIPD171220131002FSR
1000
800
600
400
200
0
250 450 650
T
J
= 175°C
T
J
= 25°C
850 V
CE
(
V
)
100
10
0 t f t doff
5 10 15 20 25 30 I
C
(
A
)
8/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
Figure 20. Switching times vs. gate resistance
GIPD171220131047FSR t
(ns)
T J = 175°C, V GE = 15V,
I
C
= 15A, V
CC
= 600V t f
100 t doff
10
0 10 20 30 40 R
G
(
Ω
)
Electrical characteristics
DocID025269 Rev 2 9/17
Electrical characteristics STGW20IH125DF, STGWT20IH125DF
Figure 21. Thermal impedance for IGBT
ZthTO2T_B
K
δ
=0.5
10 -1
0.2
0.1
0.01
10 -2
10 -5
Single pulse
10 -4 10 -3
0.05
0.02
Zth=k Rthj-c
δ
=tp/t
10 -2 tp t
10 -1 t p
(s)
Figure 22. Thermal impedance for diode
10/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF Test circuits
Figure 23. Test circuit for inductive load switching
Figure 24. Test circuit for capacitive load switching
Csnub
Figure 25. Gate charge test circuit
AM01504v1
V
CE
Figure 26. Switching waveform
AM17096v2
V
G
I C
Td(on)
Ton
Tr(Ion)
90%
10%
Tr(Voff)
Tcross
Td(off)
Toff
Tf
90%
10%
90%
10%
AM01505v1 AM01506v1
DocID025269 Rev 2 11/17
Package mechanical data
4 Package mechanical data
STGW20IH125DF, STGWT20IH125DF
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Figure 27. TO-247 drawing
12/17 DocID025269 Rev 2
0075325_G
STGW20IH125DF, STGWT20IH125DF
Dim.
b2 c
D
E
A
A1 b b1 e
L
L1
L2
∅
P
∅
R
S
Table 8. TO-247 mechanical data mm.
Min.
Typ.
4.85
2.20
1.0
2.0
3.0
0.40
19.85
15.45
5.30
14.20
3.70
5.45
18.50
3.55
4.50
5.30
5.50
Package mechanical data
Max.
5.15
2.60
1.40
2.40
3.40
0.80
20.15
15.75
5.60
14.80
4.30
3.65
5.50
5.70
DocID025269 Rev 2 13/17
Package mechanical data STGW20IH125DF, STGWT20IH125DF
Figure 28. TO-3P drawing
14/17 DocID025269 Rev 2
8045950_A
Dim.
e
L
L1
L2
D1
E
E1
E2
øP
Q
Q1 b1 b2 c
D
A
A1
A2 b
STGW20IH125DF, STGWT20IH125DF
Table 9. TO-3P mechanical data mm
Min.
Typ.
4.60
1.45
1.20
0.80
1.80
2.80
0.55
19.70
1.50
1.40
1
0.60
19.90
13.90
15.40
5.15
19.50
13.60
9.60
5.45
20
3.50
18.40
18.20
3.10
5
3.80
Package mechanical data
Max.
5
1.65
1.60
1.20
2.20
3.20
0.75
20.10
15.80
5.75
20.50
18.60
3.30
DocID025269 Rev 2 15/17
Revision history STGW20IH125DF, STGWT20IH125DF
Date
13-Jan-2014
03-Feb-2014
Revision
Table 10. Document revision history
Changes
1
2
Initial release.
Added V
CE(sat) max value in
Table 5: Dynamic characteristics
.
Minor text changes.
16/17 DocID025269 Rev 2
STGW20IH125DF, STGWT20IH125DF
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