RF5L051K5CB4
Datasheet
1500 W, 50 V, HF to 500 MHz RF power LDMOS transistor
1
3
4
5
Pin
1
2
2
5
4
3
D4E
Pin connection
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code
RF5L051K5CB4
Frequency
108 MHz
V
DD
50 V
P
OUT
1500 W
Gain
22 dB
Efficiency
80%
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate-source voltage range for improved class C operation
• On chip RC network enable high stability and ruggedness
• Excellent thermal stability, low HCI drift
• In compliance with the european directive 2002/95/EC
Applications
• 30-88 MHz/136-174 MHz ground communication
• 1.6-30 MHz HF transceiver
• Plasma generator
• Particle accelerator
• FM and VHF TV broadcast
Description
The RF5L051K5CB4 is a 1500 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz. It can be used for both CW and pulse application. It is featured for high power and high ruggedness, suitable for industrial, scientific and medical application, as well as FM radio, VHF TV and aerospace applications.
Product status link
RF5L051K5CB4
Product summary
Order code RF5L051K5CB4
Marking
Package
5L051K5
D4E
Packing
Base/bulk quantity
Tray
20/100
DS13742 - Rev 2 - October 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
1
RF5L051K5CB4
Electrical ratings
Electrical ratings
Symbol
V
DS
V
GS
V
DD
T
STG
T
J
Table 1. Absolute maximum ratings (T
C
= 25 °C)
Parameter
Drain-source voltage
Gate-source voltage
Maximum operating voltage
Storage temperature range
Maximum junction temperature
Table 2. Thermal data
Symbol
R thJC
(1)
1. T
C
= 80 °C , P
OUT
= 1500 W, CW, DC test.
Parameter
Thermal resistance, junction-to-case
Symbol
HBM
CDM
Table 3. ESD protection
Test methodology
Human body model (according to ANSI/ESDA/JEDEC JS001-2017 )
Charge device model (according to ANSI/ESDA/JEDEC JS002-2014)
Value
110
-8 to 10
55
-65 to 150
200
V
°C
°C
Unit
V
V
Value
0.09
Class
2
C3
Unit
°C/W
DS13742 - Rev 2 page 2/12
2
Note:
RF5L051K5CB4
Electrical characteristics
Electrical characteristics
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
GS(Q)
V
DS(on)
I
DS(on)
R
DS(on)
C iss
C rss
C oss
Table 4. Static (per side)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 100 μA
Zero gate voltage drain leakage current
V
GS
= 0 V, V
DS
= 50 V
V
GS
= 0 V, V
DS
= 90 V
Gate-source leakage current
Gate threshold voltage
V
GS
= -8/10 V, V
DS
= 0 V
V
DS
= 50 V, I
D
= 600 µA
Gate quiescent voltage
Static drain-source on-voltage
Static drain-source on-current
V
DS
= 50 V, I
D
= 70 mA
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, V
DS
= 100 mV
Drain-source on-state resistance V
GS
= 10 V, V
DS
= 100 mV
Common source input capacitance
Common source feedback capacitance
Common source output capacitance
V
GS
= 0 V, V
DD
= 50 V, f = 1 MHz
Symbol f
P
OUT
G
PS
η
D
VSWR
Parameter
Frequency
Output power
Power gain
Drain efficiency
Load mismatch
Table 5. Dynamic
Test conditions f = 108 MHz, 3 dB compression
P
OUT
= 1500 W, all phases
V
DD
= 50 V, I
DQ
= 200 mA, pulsed CW, pulse width = 100 μs, duty cycle = 10%.
Min.
Typ.
Max.
Unit
110 V
1
μA
1
2.3
3.05
±100 nA
2.9
V
V
450
2.5
1 mV
A
Ω
520 pF
1.4
143 pF pF
-
-
-
Min.
Typ.
Max.
Unit
500 MHz
1500 W
22
80 dB
%
10:1
DS13742 - Rev 2 page 3/12
3
Note:
RF5L051K5CB4
Typical performances
Typical performances
26
25
24
23
22
21
20
19
18
17
16
54
Figure 1. Power gain and drain efficiency vs output power (f = 108 MHz)
55 56 60
GADG141020211009GT
85
80
75
70
65
60
61 62
55
50
45
40
63
35
57
G
PS
58 59
P
OUT
(dbm)
η
D
V
DD
= 50 V, I
DQ
= 200 mA, pulsed CW, pulse width = 100 μs, duty cycle = 10%.
DS13742 - Rev 2 page 4/12
4
RF5L051K5CB4
Test circuits
Test circuits
C5
C1
C2
Figure 2. Test circuit layout (f = 108 MHz)
C20 C6
C10
R1
R3
C12
L1
C9
C17
C21
C13 C3
C4
R2
R4
C11 C8
C19
C7
C16
C14
C23
C15
C18
C22
GADG12052021112GT
Figure 3. Test circuit photo
DS13742 - Rev 2
GADG141020211026GT page 5/12
Component
C1, C2
C3, C4
C5
C6, C7, C8, C9, C10, C11
C12, C13
C14, C15, C16, C23
C17, C18, C19, C20
C21, C22
R1, R2
R3, R4
T1
T2, T3
T4, T5
T6
L1, L2
PCB
RF5L051K5CB4
Test circuits
Table 6. Components list
Value
470 pF (2x)
470 pF (3x)
33 pF
100 nF
20 pF
3.9 pF
10 μF
2200 μF
Reference
ATC800B
ATC800B
DLC70B
C4532X7R3D103KT000N
DLC70B
DLC70B
100 V ceramic capacitor
63 V electrolytic capacitor
16 Ω
470 Ω
50 Ω, 150 mm
25 Ω, line length = 150 mm, 9:1
12.5 Ω, line length = 150 mm, 9:1
0805 chip resistor
0805 chip resistor
SFF-50-1.5
SFF-25-1.5
SFF-12.5-1.5
50 Ω, 150 mm RG402-3
4 turns, Φ 1 mm
0.762 mm (0.030'') thick, ɛr = 3.48, Rogers RO4350B, 1 oz. copper
DS13742 - Rev 2 page 6/12
5
5.1
RF5L051K5CB4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
D4E package information
Figure 4. D4E package outline
DS13742 - Rev 2
DM00666713_2 page 7/12
DS13742 - Rev 2
Symbol
P
Q
R
S
T
V
R1
CH1
G
H
L
M
N
A
B
C
E
F
Min.
10.04
5.72
16.11
1.51
0.10
35.44
11.56
1.92
3.06
9.25
4.17
30.96
1.55
2.09
41.08
13.60
Table 7. D4E package mechanical data
Millimeters
Typ.
4.55
31.24
1.62
2.16
41.22
13.72
1.59
1.19
10.16
5.85
16.62
1.78
0.13
35.56
11.68
2.04
3.18
9.40
RF5L051K5CB4
D4E package information
Max.
10.28
3.48
17.13
2.05
0.16
35.68
11.80
2.16
3.30
9.50
4.93
31.52
1.69
2.23
13.84
page 8/12
5.2
RF5L051K5CB4
Marking information
Marking information
PACKAGE FACE : TOP
C
E
D
A B
F G H
Figure 5. Marking composition
LEGEND
Unmarkable Surface
Marking Composition Field
A - STANDARD ST LOGO
B - ECO level
(e4)
C
D
- MARKING AREA
- ADDITIONAL
INFORMATION
(MAX CHAR ALLOWED = 7)
E - COUNTRY OF ORIGIN
(MAX CHAR ALLOWED = 3)
F - Assy Plant
(PP)
G - Assy Year
(Y)
H - Assy Week
(WW)
GADG040220211644GT
DS13742 - Rev 2 page 9/12
Revision history
Date
25-May-2021
14-Oct-2021
Version
1
2
Table 8. Document revision history
Changes
First release.
Updated Features and Description
on cover page.
Updated Table 1. Absolute maximum ratings (T
C
= 25 °C)
.
Updated Section 2 Electrical characteristics
.
Added
Section 3 Typical performances .
Updated Figure 3. Test circuit photo
and
Table 6. Components list
.
RF5L051K5CB4
DS13742 - Rev 2 page 10/12
RF5L051K5CB4
Contents
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
5 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
5.1
D4E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5.2
Marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13742 - Rev 2 page 11/12
RF5L051K5CB4
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DS13742 - Rev 2 page 12/12
