STGA30M65DF2
Datasheet
Trench gate field-stop 650 V, 30 A low-loss M series IGBT in a D3PAK package
Features
TAB
1
2
D³PAK
•
•
6 µs of minimum short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 30 A
•
•
Tight parameters distribution
Positive VCE(sat) temperature coefficient
•
•
•
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Prerelease product(s)
C(TAB)
Applications
•
•
•
•
G(1)
E(2)
Motor control
UPS
PFC
General purpose inverter
G1E2CTD
Description
Product status
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where low-loss and
short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature
coefficient and tight parameter distribution result in safer paralleling operation.
STGA30M65DF2
Product summary
Order code
STGA30M65DF2
Marking
G30M65DF2
Package
D3PAK
Packing
Tape and reel
DS12524 - Rev 1 - April 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STGA30M65DF2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0 V)
650
V
IC
Continuous collector current at TC = 25 °C
60
A
IC
Continuous collector current at TC = 100 °C
30
A
Pulsed collector current
120
A
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
60
A
IF
Continuous forward current at TC = 100 °C
30
A
Pulsed forward current
120
A
PTOT
Total dissipation at TC = 25 °C
258
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
VCES
ICP (1)
VGE
Prerelease product(s)
IFP
(1)
TJ
Parameter
1. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS12524 - Rev 1
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
0.58
°C/W
RthJC
Thermal resistance junction-case diode
1.47
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
page 2/17
STGA30M65DF2
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
Prerelease product(s)
VCE(sat)
VF
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
Test conditions
Min.
VGE = 0 V, IC = 250 µA
650
Typ.
1.55
VGE = 15 V, IC = 30 A,
TJ = 125 °C
1.95
VGE = 15 V, IC = 30 A,
TJ = 175 °C
2.1
IF = 30 A
1.85
IF = 30 A, TJ = 125 °C
1.6
IF = 30 A, TJ = 175 °C
1.5
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 30 A
VGE(th)
Max.
6
2.0
V
2.65
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
µA
Unit
Table 4. Dynamic characteristics
Symbol
Cies
DS12524 - Rev 1
Parameter
Test conditions
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCE = 25 V, f = 1 MHz,
VGE = 0 V
VCC = 520 V, IC = 30 A,
VGE = 0 to 15 V (see Figure
29. Gate charge test circuit)
Min.
Typ.
Max.
-
2490
-
-
143
-
-
46
-
-
80
-
-
18
-
-
32
-
pF
nC
page 3/17
STGA30M65DF2
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
31.6
-
ns
Current rise time
13.4
-
ns
1791
-
A/µs
115
-
ns
110
-
ns
Turn-on current slope
Turn-off delay time
Current fall time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω
(see )Figure 28. Test circuit
for inductive load switching
Eon (1)
Turn-on switching energy
0.3
-
mJ
(2)
Turn-off switching energy
0.96
-
mJ
Total switching energy
1.26
-
mJ
Turn-on delay time
30
-
ns
Current rise time
17
-
ns
1435
-
A/µs
116
-
ns
194
-
ns
0.67
-
mJ
Eoff
Ets
td(on)
tr
(di/dt)on
Prerelease product(s)
Parameter
td(off)
tf
Turn-on current slope
Turn-off delay time
Current fall time
VCE = 400 V, IC = 30 A,
VGE = 15 V, RG = 10 Ω,
TJ = 175 °C (see )Figure
28. Test circuit for inductive
load switching
(1)
Turn-on switching energy
Eoff (2)
Turn-off switching energy
1.36
-
mJ
Total switching energy
2.03
-
mJ
Eon
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
DS12524 - Rev 1
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
140
-
ns
-
880
-
nC
-
17
-
A
-
650
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
115
-
µJ
trr
Reverse recovery time
-
244
-
ns
Qrr
Reverse recovery charge
-
2743
-
nC
Irrm
Reverse recovery current
-
25
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
220
-
A/µs
Err
Reverse recovery energy
-
320
-
µJ
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C (see Figure
28. Test circuit for inductive
load switching)
page 4/17
STGA30M65DF2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs. case temperature
GIPD100420150947FSR
Ptot
(W)
Figure 2. Collector current vs. case temperature
GIPD100420150959FSR
IC
(A)
60
250
50
200
40
150
30
100
Prerelease product(s)
50
20
10
VGE ≥ 15V, T J ≤ 175 °C
0
-50
50
0
100
150
TC(°C)
Figure 3. Output characteristics (TJ = 25 °C)
GIPD100420151008FSR
IC
(A)
VGE=15V
VGE ≥ 15V, T J ≤ 175 °C
0
-50
0
50
100
150
Figure 4. Output characteristics (TJ = 175 °C)
GIPD100420151025FSR
IC
(A)
VGE=15V
13V
100
TC(°C)
100
13V
11V
80
60
11V
60
40
9V
20
0
0
80
40
9V
20
1
2
3
4
5
VCE(V)
Figure 5. VCE(sat) vs. junction temperature
GIPD281020131418FSR
VCE(sat)
(V)
IC= 60A
VGE= 15V
3
7V
0
0
1
2
3
4
GIPD281020131116FSR
VCE(sat)
(V)
VGE= 15V
TJ= 175°C
4
IC= 30A
2.2
1.8
TJ= 25°C
3
2
TJ= -40°C
IC= 15A
1.4
DS12524 - Rev 1
VCE(V)
Figure 6. VCE(sat) vs. collector current
5
2.6
1
-50
5
1
0
50
100
150
TJ(°C)
0
0
20
40
60
80
100
IC(A)
page 5/17
STGA30M65DF2
Electrical characteristics (curves)
Figure 7. Collector current vs. switching frequency
GIPD100420151129FSR
Ic [A]
60
Figure 8. Forward bias safe operating area
GIPD100420151137FSR
IC
(A)
Tc=80°C
100
50
1 µs
Tc=100 °C
40
10 µs
30
20
10
10
1
Prerelease product(s)
Single pulse
Tc= 25°C, T J ≤ 175°C
VGE= 15V
rectangular current shape,
(duty cycle=0.5, VCC = 400V, RG=10 Ω,
VGE = 0/15 V, TJ =175°C)
1 ms
f [kHz]
10
Figure 9. Transfer characteristics
VCE= 5V
1
1
10
100
VCE(V)
Figure 10. Diode VF vs. forward current
GIPD100420151152FSR
IC
(A)
100
100 µs
GIPD100420151209FSR
VF (V)
3
TJ= 25 °C
TJ= -40°C
2.5
80
TJ= 175°C
2
60
1.5
40
TJ= 175 °C
20
0
5
0.5
6
7
8
9
10
11
VGE(V)
Figure 11. Normalized VGE(th) vs. junction temperature
GIPD100420151232FSR
VGE(th)
(norm)
IC= 500µA
VCE= VGE
1.1
0
0
1.0
0.8
0.95
DS12524 - Rev 1
100
150
60
80
100
IF(A)
IC= 250µA
1.1
0.9
50
40
GIPD100420151240FSR
V(BR)ces
(norm)
1.05
0
20
Figure 12. Normalized V(BR)CES vs. junction temperature
1.0
0.7
-50
TJ= 25°C
1
TJ(°C)
0.9
-50
0
50
100
150
TJ(°C)
page 6/17
STGA30M65DF2
Electrical characteristics (curves)
Figure 13. Capacitance variations
Figure 14. Gate charge vs. gate-emitter voltage
GIPD100420151249FSR
C
(pF)
GIPD100420151257FSR
VGE
(V)
f= 1MHz
Cies
1000
IC= 30A
IG= 1mA
VCC= 520V
16
12
8
100
Coes
Prerelease product(s)
10
0.1
1
10
100
Cres
VCE(V)
Figure 15. Switching energy vs. collector current
E
(mJ)
GIPD100420151322FSR
VCC = 400V, V GE = 15V,
RG = 10Ω, TJ = 175°C
4
4
0
0
Eoff
2
60
80
Qg(nC)
GIPD100420151328FSR
E
(mJ)
VCC = 400 V, V GE = 15 V,
IC = 30 A, TJ = 175 °C
3
Etot
40
Figure 16. Switching energy vs. gate resistance
4
3
20
Etot
2
Eoff
1
0
0
1
Eon
10
20
30
40
Eon
50
60 IC(A)
Figure 17. Switching energy vs. temperature
E
(mJ)
GIPD100420151336FSR
VCC= 400V, V GE= 15V,
RG= 10Ω, IC= 30A
20
40
E
(mJ)
Eoff
80
100 RG(Ω)
GIPD100420151340FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, IC= 30A
2
Etot
60
Figure 18. Switching energy vs. collector emitter voltage
2.5
2
1.5
0
0
Etot
Eoff
1.5
1
1
0.5
Eon
0.5
Eon
0
0
DS12524 - Rev 1
50
100
150
TJ(°C)
0
150
250
350
450
VCE(V)
page 7/17
STGA30M65DF2
Electrical characteristics (curves)
Figure 19. Short-circuit time and current vs. VGE
tsc
(µs)
GIPD100420151351FSR
ISC(A)
VCC ≤ 400V, TJ ≤ 150°C
ISC
20
t
(ns)
GIPD100420151403FSR
TJ= 175°C, VGE= 15V,
RG= 10Ω, VCC= 400V
150
tSC
tf
100
15
120
10
90
5
60
td(off)
td(on)
tr
10
0
9
Prerelease product(s)
Figure 20. Switching times vs. collector current
10
11
12
13
14
15
30
VGE(V)
Figure 21. Switching times vs. gate resistance
GIPD100420151412FSR
t
(ns)
1
0
20
30
40
50
IC(A)
Figure 22. Reverse recovery current vs. diode current
slope
Irm
(A)
TJ= 175°C, VGE= 15V,
IC= 30A, VCC= 400V
10
40
GIPD100420151417FSR
IF = 30A, VCC = 400V
VGE = 15V
tf
35
100
td(off)
30
td(on)
25
20
tr
10
0
TJ =175°C
20
40
60
80
RG(Ω)
Figure 23. Reverse recovery time vs. diode current slope
GIPD100420151434FSR
trr
(ns)
IF = 30A, VCC = 400V,
VGE = 15V
280
15
200
600
1000
1400
1800
di/dt(A/µs)
Figure 24. Reverse recovery charge vs. diode current
slope
Qrr
(µC)
2.9
GIPD100420151442FSR
IF = 30A, VCC = 400V,
VGE = 15V
260
2.8
240
220
2.7
200
2.6
180
200
DS12524 - Rev 1
TJ =175°C
600
1000
1400
1800 di/dt(A/µs)
2.5
200
TJ =175°C
600
1000
1400
1800 di/dt(A/µs)
page 8/17
STGA30M65DF2
Electrical characteristics (curves)
Figure 25. Reverse recovery energy vs. diode current slope
GIPD100420151455FSR
Err
(mJ)
IF = 30A, VCC = 400V,
VGE = 15V
0.38
0.34
0.3
TJ =175°C
0.26
0.22
Prerelease product(s)
0.18
200
600
1000
1400
1800 di/dt(A/µs)
Figure 26. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
DS12524 - Rev 1
-4
10
-3
10
-2
10
-1
10
tp (s)
page 9/17
STGA30M65DF2
Electrical characteristics (curves)
Prerelease product(s)
Figure 27. Thermal impedance for diode
DS12524 - Rev 1
page 10/17
STGA30M65DF2
Test circuits
3
Test circuits
Figure 28. Test circuit for inductive load switching
C
A
Figure 29. Gate charge test circuit
k
A
k
L=100 µH
G
E
B
B
+
3.3
µF
C
G
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
Prerelease product(s)
AM015 04v 1
Figure 30. Switching waveform
Figure 31. Diode reverse recovery waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
25
Tcross
90%
IC
Td(on)
Ton
10%
Td(off)
Tr(Ion)
Tf
Toff
AM01506v1
DS12524 - Rev 1
page 11/17
STGA30M65DF2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1
D³PAK (TO-263) type A package information
Prerelease product(s)
Figure 32. D³PAK (TO-268) package outline
8506701_1
DS12524 - Rev 1
page 12/17
STGA30M65DF2
D³PAK (TO-268) package information
Table 7. D³PAK (TO-268) mechanical data
mm
Prerelease product(s)
Dim.
Min.
Typ.
Max.
A
4.90
5.10
A1
2.70
2.90
A2
0.02
0.25
b
1.15
1.45
C
0.40
0.65
C2
1.45
1.61
D
13.80
14.00
D1
11.80
12.10
D2
7.50
7.80
D3
2.90
3.20
E
15.85
16.05
E1
13.30
13.60
e
5.45
H
18.70
19.10
L
1.70
2.00
L2
1.00
1.15
L3
0.25
L4
3.80
4.10
Figure 33. D³PAK (TO-268) recommended footprint (dimensions are in mm)
3.7
20.1
13.0
16.1
1.9
10.9
D3PAK_8506701_1
DS12524 - Rev 1
page 13/17
STGA30M65DF2
D³PAK (TO-268) packing information
4.2
D2PAK (TO-263) type A packing information
Prerelease product(s)
Figure 34. D³PAK (TO-268) tape outline (dimensions are in mm)
Figure 35. D³PAK (TO-268) reel outline (dimensions are in mm)
DS12524 - Rev 1
page 14/17
STGA30M65DF2
Revision history
Table 8. Document revision history
Revision
10-Apr-2018
1
Changes
Initial release. The document status is preliminary data.
Prerelease product(s)
Date
DS12524 - Rev 1
page 15/17
STGA30M65DF2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
4.1
D³PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2
D2PAK (TO-263) type A packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Prerelease product(s)
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
DS12524 - Rev 1
page 16/17
STGA30M65DF2
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
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products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
Prerelease product(s)
© 2018 STMicroelectronics – All rights reserved
DS12524 - Rev 1
page 17/17
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