STGP15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss
in a TO-220 package
Datasheet - production data
TAB
1
2
3
Features
6 μs of short-circuit withstand time
V
CE(sat)
= 1.55 V (typ.) @ I
C
= 15 A
Tight parameter distribution
Safer paralleling
Positive V
CE(sat)
temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: T
J
= 175 °C
TO-220
Figure 1: Internal schematic diagram
Order code
STGP15M65DF2
Applications
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series
IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V
CE(sat)
temperature coefficient and tight parameter distribution result in safer paralleling operation.
Table 1: Device summary
Marking Package Packing
G15M65DF2 TO-220 Tube
May 2017 DocID028489 Rev 4
This is information on a product in full production.
1/17 www.st.com
Contents
Contents
STGP15M65DF2
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3 Test circuits ................................................................................... 12
4 Package information ..................................................................... 13
4.1
TO-220 type A package information ................................................ 14
5 Revision history ............................................................................ 16
2/17 DocID028489 Rev 4
STGP15M65DF2
1 Electrical ratings
Symbol
V
CES
I
C
I
CP
(1)
V
GE
I
F
I
F
I
FP
(1)
P
TOT
T
STG
T
J
Table 2: Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
Continuous collector current at T
C
= 100 °C
Pulsed collector current
Gate-emitter voltage
Continuous forward current at T
C
= 25 °C
Continuous forward current at T
C
= 100 °C
Pulsed forward current
Total dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
Notes:
(1)
Pulse width limited by maximum junction temperature.
Symbol
Table 3: Thermal data
Parameter
R thJC
R thJC
R thJA
Thermal resistance junction-case IGBT
Thermal resistance junction-case diode
Thermal resistance junction-ambient
Electrical ratings
Value
650
30
15
60
±20
30
15
60
136
- 55 to 150
- 55 to 175
Unit
A
A
A
W
°C
°C
V
A
A
A
V
Value
1.1
2.08
62.5
Unit
°C/W
°C/W
°C/W
DocID028489 Rev 4 3/17
Electrical characteristics
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Symbol Parameter
Table 4: Static characteristics
Test conditions
V
(BR)CES
Collector-emitter breakdown voltage
V
GE
= 0 V, I
C
= 250 μA
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15 V, I
C
= 15 A
V
GE
= 15 V, I
C
= 15 A
T
J
= 125 °C
V
GE
= 15 V, I
C
= 15 A
T
J
= 175 °C
I
F
= 15 A
V
F
Forward on-voltage I
F
= 15 A T
J
= 125 °C
V
GE(th)
Gate threshold voltage
I
I
CES
GES
Collector cut-off current
I
F
= 15 A T
J
= 175 °C
V
CE
= V
GE
, I
C
= 500 μA
V
GE
= 0 V, V
CE
= 650 V
Gate-emitter leakage current V
CE
= 0 V, V
GE
= ±20 V
Symbol Parameter
Table 5: Dynamic characteristics
Test conditions
C ies
C oes
C res
Q g
Q ge
Q gc
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
V
CC
= 520 V, I
C
= 15 A,
V
GE
= 0 to 15 V
(see Figure 30: " Gate charge test circuit"
STGP15M65DF2
Min. Typ. Max. Unit
5
650
1.55 2.0
1.9
V
V
2.1
1.7 2.6
1.5
1.4
6
V
V
V
7
25
V
µA
±250 µA
Min. Typ. Max. Unit
-
-
-
-
-
-
1250
80
25
45
11
15
-
-
-
-
-
- pF pF pF nC nC nC
4/17 DocID028489 Rev 4
STGP15M65DF2 Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit Symbol t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy t d(on)
Turn-on delay time t r
Current rise time
(di/dt) on
Turn-on current slope t d(off)
Turn-off delay time t f
Current fall time
E
on
(1)
Turn-on switching energy
E
off
(2)
Turn-off switching energy
E ts
Total switching energy
V
CE
= 400 V, I
C
= 15 A,
V
GE
= 15 V, R
G
= 12 Ω
(see Figure 29: " Test circuit for inductive load switching" )
V
CE
= 400 V, I
C
= 15 A,
R
G
= 15 Ω, V
GE
= 15 V,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
24.8
9.2
1300
96
169
0.22
0.61
0.83
24
7.8
1570
93
106
0.09
0.45
0.54
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
- ns ns
A/µs ns ns
µJ
µJ
µJ ns ns
A/µs ns ns
µJ
µJ
µJ t sc
Short-circuit withstand time
V
CC
≤ 400 V, V
GE
= 15 V,
T
Jstart
= 150 °C
V
CC
≤ 400 V, V
GE
= 13 V,
T
Jstart
= 150 °C
6
10
-
-
µs
Notes:
(1)
Including the reverse recovery of the diode.
(2)
Including the tail of the collector current.
Symbol
Table 7: Diode switching characteristics (inductive load)
Parameter Test conditions Min. Typ. Max. Unit t rr
Q rr
I rrm dI rr/
/dt
E rr t rr
Q rr
I rrm dI rr/
/dt
E rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Peak rate of fall of reverse recovery current during t b
Reverse recovery energy
I
F
= 15 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/μs
(see Figure 29: " Test circuit for inductive load switching" )
I
F
= 15 A, V
R
= 400 V,
V
GE
= 15 V, di/dt = 1000 A/μs,
T
J
= 175 °C
(see Figure 29: " Test circuit for inductive load switching" )
-
-
-
-
-
-
142
525
13.4
790
-
-
64
241
- 1690
- 20
420
176
-
-
-
-
-
-
-
-
-
- ns nC
A
Α/µs
µJ ns nC
A
Α/µs
µJ
DocID028489 Rev 4 5/17
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
STGP15M65DF2
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (T
J
= 25 °C) Figure 5: Output characteristics (T
J
= 175 °C)
6/17
Figure 6: V
CE(sat)
vs. junction temperature Figure 7: V
CE(sat)
vs. collector current
DocID028489 Rev 4
STGP15M65DF2
Figure 8: Collector current vs. switching frequency
Electrical characteristics
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics Figure 11: Diode V
F
vs. forward current
Figure 12: Normalized V
GE(th)
vs. junction temperature
Figure 13: Normalized V
(BR)CES
vs. junction temperature
DocID028489 Rev 4 7/17
Electrical characteristics
Figure 14: Capacitance variations
STGP15M65DF2
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage
8/17 DocID028489 Rev 4
STGP15M65DF2
Figure 20: Short-circuit time and current vs. V
GE
Electrical characteristics
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope
Figure 24: Reverse recovery time vs. diode current slope
Figure 25: Reverse recovery charge vs. diode current slope
DocID028489 Rev 4 9/17
Electrical characteristics
Figure 26: Reverse recovery energy vs. diode current slope
STGP15M65DF2
Figure 27: Thermal impedance for IGBT
10/17 DocID028489 Rev 4
STGP15M65DF2
Figure 28: Thermal impedance for diode
Electrical characteristics
DocID028489 Rev 4 11/17
Test circuits
3 Test circuits
Figure 29: Test circuit for inductive load switching
STGP15M65DF2
Figure 30: Gate charge test circuit
G
C
A A
E
B
L=100 µH
B
G
C
E
D.U.T
+
-
R
G
3.3
µF
1000
µF
V
CC
AM01504v 1
Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt
I
F
I
RRM
Q rr t s t rr t f
I
RRM
10%
V
RRM t dv/dt
AM01507v1
12/17 DocID028489 Rev 4
STGP15M65DF2
4 Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK ® is an ST trademark.
DocID028489 Rev 4 13/17
Package information
4.1 TO-220 type A package information
Figure 33: TO-220 type A package outline
STGP15M65DF2
14/17 DocID028489 Rev 4
STGP15M65DF2
Dim. e1
F
H1
J1
L
L1
L20
D
D1
E e
A b b1 c
L30
øP
Q
Table 8: TO-220 type A package mechanical data
Package information mm
Min. Typ. Max.
4.40
0.61
1.14
0.48
15.25
1.27
4.60
0.88
1.55
0.70
15.75
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
3.75
2.65
16.40
28.90
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
3.85
2.95
DocID028489 Rev 4 15/17
Revision history
5
STGP15M65DF2
Revision history
Date Revision
Table 9: Document revision history
Changes
14-Oct-2015
13-Nov-2015
22-Aug-2016
28-Apr-2017
1
2
3
4
First release.
Document status promoted from preliminary to production data.
Updated T able 2: "Absolute maximum ratings" and Table 6: "IGBT switching characteristics (inductive load)".
Updated Figure 16: "Switching energy vs. collector current", Figure 17:
"Switching energy vs. gate resistance", Figure 18: "Switching energy vs. temperature" and Figure 19: "Switching energy vs. collector emitter voltage".
Changed Figure 11: "Diode VF vs. forward current".
Modified: title, features and applications on cover page.
Modified Table 4: "Static characteristics" , Table 5: "Dynamic characteristics" ,
Table 7: "Diode switching characteristics (inductive load)" .
Minor text changes.
16/17 DocID028489 Rev 4
STGP15M65DF2
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DocID028489 Rev 4 17/17
