STU6N60DM2
Datasheet
N-channel 600 V, 0.95 Ω typ., 5 A MDmesh™ DM2 Power MOSFET in an IPAK package
TAB
G(1)
IPAK
D(2, TAB)
1
2
3
S(3)
AM01475V1
Features
Order code
STU6N60DM2
V
DS
600 V
R
DS(on)
max.
1.10 Ω
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
5 A
P
TOT
60 W
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fastrecovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status link
STU6N60DM2
Product summary
Order code
Marking
Package
Packing
STU6N60DM2
6N60DM2
IPAK
Tube
DS12223 - Rev 2 - June 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STU6N60DM2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
Gate-source voltage
Parameter
I
D
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
Drain current (pulsed) I
DM
(1)
P
TOT
dv/dt (2)
Total dissipation at T case
= 25 °C
dv/dt (3)
T stg
T j
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 5 A, di/dt = 900 A/μs; V
DS
peak < V
(BR)DSS
, V
DD
= 480 V.
3. V
DS
≤ 480 V.
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Thermal resistance junction-case
Parameter
Thermal resistance junction-ambient
Table 3. Avalanche characteristics
Symbol
I
AR
(1)
E
AS
(2)
Single pulse avalanche energy
Parameter
Avalanche current, repetitive or not repetitive
1. Pulse width limited by T jmax
.
2. Starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Value
±25
5
3.2
20
60
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
2.08
100
Unit
°C/W
Value
1.7
132
Unit
A mJ
DS12223 - Rev 2 page 2/14
2
STU6N60DM2
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
Test conditions
= 0 V, I
D
= 1 mA
V
R
I
I
DSS
GSS
GS(th)
DS(on)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source onresistance
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T case
= 125 °C (1)
V
V
DS
V
DS
GS
1. Defined by design, not subject to production test.
= 0 V, V
= V
GS
GS
, I
D
= 10 V, I
D
= ±25 V
= 250 µA
= 2.5 A
Min.
600
Typ.
Max.
Unit
V
3.25
4
0.95
1
100
±5
4.75
1.10
µA
µA
V
Ω
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
V
Equivalent output capacitance V
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
DS
DD
Test conditions
= 100 V, f = 1 MHz, V
= 0 to 480 V, V f = 1 MHz, I
D
= 0 A
= 480 V, I
D
GS
= 0 V
= 5 A, V
GS
= 0 to
10 V (see Figure 14. Test circuit for gate charge behavior
)
GS
= 0 V
Min.
-
-
-
-
-
-
-
-
Typ.
274
15
2
25
6.5
6.2
1.8
2.7
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 300 V, I
D
= 2.5 A R
G
= 4.7 Ω,
V
GS
= 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform
)
Min.
-
-
-
-
Typ.
9.2
5.6
12
19.6
Max.
-
-
-
-
Unit ns
DS12223 - Rev 2 page 3/14
STU6N60DM2
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
I
V
GS
SD
V
DD
circuit for inductive load switching and diode recovery times
SD
Test conditions
= 0 V, I
SD
= 5 A
= 5 A, di/dt = 100 A/µs,
= 60 V (see Figure 15. Test
)
= 5 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
1. Pulse width is limited by safe operating area.
2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
j
= 150 °C (see
Figure
15. Test circuit for inductive load switching and diode recovery times )
-
-
-
-
-
-
Min.
-
-
-
60
135
4.5
132
429
6.5
Typ.
Max.
5
20
1.6
ns nC
A ns nC
A
Unit
A
A
V
DS12223 - Rev 2 page 4/14
STU6N60DM2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
I
D
(A)
8
Figure 3. Output characteristics
GIPD200620171223OCH
V
GS
= 9, 10 V
V
GS
= 8 V
V
GS
= 7 V
6
4
V
GS
= 6 V
2
0
0 4 8 12 16
V
GS
= 5 V
20 V
DS
(V)
6
4
2
0
4
I
D
(A)
Figure 4. Transfer characteristics
GIPD200620171234TCH
V
DS
= 20 V
8
5 6 7 8 V
GS
(V)
DS12223 - Rev 2 page 5/14
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
10 V
DS
GIPD200620171351QVG V
DS
(V)
V
DD
= 480 V
I
D
= 5 A
600
500
8 400
6
4
300
200
2
0
0 1 2 3 4 5 6 7
100
Q
0 g
(nC)
C
(pF)
Figure 7. Capacitance variations
GIPD200620171408CVR
10 3
C
ISS
10 2
10 1
10 0
10 -1 10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
Figure 9. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GIPD200620171427VTH
1.1
I
D
= 250 µA
1
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T j
(°C)
STU6N60DM2
Electrical characteristics (curves)
Figure 6. Static drain-source on-resistance
R
DS(on)
(Ω)
1.01
GIPD200620171401RID
0.99
V
GS
= 10 V
0.97
0.95
0.93
0.91
0 1 2 3 4 5 I
D
(A)
Figure 8. Output capacitance stored energy
E
OSS
(µJ)
GIPD270620171145EOS
2
1.6
1.2
0.8
0.4
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 10. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GIPD200620171437RON
2.5
2
V
GS
= 10 V
1.5
1
0.5
0
-75 -25 25 75 125 T j
(°C)
DS12223 - Rev 2 page 6/14
STU6N60DM2
Electrical characteristics (curves)
Figure 11. Source-drain diode forward characteristics
V
SD
(V)
1.1
GIPD200620171441SDF
T j
= -50 °C
1
T j
= 25 °C
0.9
0.8
0.7
0.6
0.5
0 1 2 3 4
T j
= 150 °C
5 I
SD
(A)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
GS(th)
(norm.)
GIPD200620171444VTH
1.1
1.05
I
D
= 1 mA
1
0.95
0.9
0.85
-75 -25 25 75 125 T j
(°C)
DS12223 - Rev 2 page 7/14
STU6N60DM2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
3.3
µF
S
+
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I
DM
I D
V DD V DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
10%
V
GS
V
DS
90%
0 10%
AM01473v1
DS12223 - Rev 2 page 8/14
4
STU6N60DM2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com
. ECOPACK ® is an ST trademark.
DS12223 - Rev 2 page 9/14
4.1
STU6N60DM2
IPAK (TO-251) type A package information
IPAK (TO-251) type A package information
Figure 19. IPAK (TO-251) type A package outline
DS12223 - Rev 2
0068771_IK_typeA_rev14 page 10/14
DS12223 - Rev 2
Dim.
D
E e c c2 e1
H
L
L1
L2
V1
A
A1 b b2 b4
B5
STU6N60DM2
IPAK (TO-251) type A package information
Table 8. IPAK (TO-251) type A package mechanical data mm
Typ.
Min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
0.30
2.28
16.10
0.80
10°
0.60
0.60
6.20
6.60
4.60
Max.
2.40
1.10
0.90
0.95
5.40
9.40
1.20
1.00
page 11/14
Revision history
Date
03-Jul-2017
14-Jun-2018
Revision
1
2
Table 9. Document revision history
Changes
First release
Updated Table 5. Dynamic
.
STU6N60DM2
DS12223 - Rev 2 page 12/14
STU6N60DM2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1
IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS12223 - Rev 2 page 13/14
STU6N60DM2
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DS12223 - Rev 2 page 14/14
