STP11N60DM2
Datasheet
N-channel 600 V, 370 mΩ typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package
G(1)
TAB
TO-220
1
2
3
D(2, TAB)
S(3)
NG1D2TS3Z
Order code V
DS
@ T
Jmax
R
DS(on) max.
STP11N60DM2 650 V 420 mΩ
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
I
D
10 A
P
TOT
110 W
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Q rr
) and time (t rr
) combined with low R
DS(on)
, rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status
STP11N60DM2
Product summary
Order code
Marking
Package
Packing
STP11N60DM2
11N60DM2
TO-220
Tube
DS11675 - Rev 2 - November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
STP11N60DM2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
I
GS
D
Parameter
Gate-source voltage
Drain current (continuous) at T case
= 25 °C
Drain current (continuous) at T case
= 100 °C
I
DM
(1)
P
TOT
dv/dt (2) dv/dt (3)
T stg
T j
Drain current (pulsed)
Total power dissipation at T case
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. I
SD
≤ 10 A, di/dt=900 A/μs; V
DS
peak < V
(BR)DSS
,V
DD
= 400 V
3. V
DS
≤ 480 V.
Symbol
R thj-case
R thj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Table 3. Avalanche characteristics
Symbol
I
AR
(1)
E
AS
(2)
Single pulse avalanche energy
1. pulse width limited by T jmax
2. starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V.
Parameter
Avalanche current, repetitive or not repetitive
Value
±25
10
6.3
40
110
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.14
62.5
Unit
°C/W
Value
2.5
250
Unit
A mJ
DS11675 - Rev 2 page 2/13
2
STP11N60DM2
Electrical characteristics
Electrical characteristics
(T case
= 25 °C unless otherwise specified)
Table 4. Static
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown voltage
V
GS
= 0 V, I
Test conditions
D
= 1 mA
I
DSS
I
GSS
V
GS(th)
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
V
GS
= 0 V, V
DS
= 600 V
V
GS
= 0 V, V
DS
= 600 V,
T case
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 µA
R
DS(on)
Static drain-source onresistance
1. Defined by design, not subject to production test.
V
GS
= 10 V, I
D
= 5 A
Min.
Typ.
Max.
Unit
600 V
1.5
µA
100
3 4
370
±5
5
420
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
C oss eq.
(1)
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Test conditions
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Reverse transfer capacitance
Equivalent output capacitance V
DS
= 0 to 480 V, V
GS
= 0 V
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A
Total gate charge
Gate-source charge
V
DD
= 480 V, I
D
= 10 A, V
GS
= 0 to 10 V
(see Figure 14. Test circuit for gate charge behavior )
Gate-drain charge
Min.
-
-
-
-
-
-
-
-
Typ.
614
32
1.08
57
6.2
16.5
3.8
9.2
Max.
-
-
-
-
-
-
-
-
Unit pF pF
Ω nC
1. C oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C oss to 80% V
DSS
.
when V
DS
increases from 0
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
V
GS
= 300 V, I
D
= 5 A, R
G
= 4.7 Ω,
= 10 V (see
Figure 13. Test circuit for resistive load switching times and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
11.7
-
-
-
-
6.3
31
9.5
-
-
ns
DS11675 - Rev 2 page 3/13
DS11675 - Rev 2
STP11N60DM2
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
(1)
I
SDM
(2)
V
SD
(3)
t rr
Q rr
I
RRM t rr
Q rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
V
GS
SD
I
SD
T j
= 10 A, di/dt = 100 A/µs, V
= 10 A, di/dt = 100 A/µs, V
DD
)
= 60 V,
= 150 °C (see
Figure 15. Test circuit for inductive load switching and diode recovery times
DD
= 60 V
(see Figure 15. Test circuit for inductive load switching and diode recovery times
)
1. Limited by maximum junction temperature.
2. Pulse width is limited by safe operating area.
3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
Test conditions
= 0 V, I
SD
= 10 A
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
10 A
40
1.6
A
90
248
5.5
160
664
8.3
V ns nC
A ns nC
A
Symbol
V
(BR)GSO
Table 8. Gate-source Zener diode
Parameter Test conditions
Gate-source breakdown voltage I
GS
= ±250 µA, I
D
= 0 A
Min.
Typ.
Max.
Unit
±30 V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
page 4/13
STP11N60DM2
Electrical characteristics curves
2.1
Electrical characteristics curves
I
D
(A)
Figure 1. Safe operating area
GIPG270516FQ6F01PSOA
10 1
Operation in this area is limited by max. R
DS(on)
10 0
10 -1
10 -1 10 0
T j
≤ 150 °C
Tc =25°C single pulse
10 1 10 2 10 3 V
DS
(V) t p
= 10µs t p
= 100µs t p
= 1ms t p
= 10ms
8
4
0
0
I
D
(A)
Figure 3. Output characteristics
V
GIPG270516FQ6F01FOCH
GS
= 8, 9, 10 V
20
16
7 V
12
4 8 12
6 V
16 V
DS
(V)
Figure 5. Gate charge vs gate-source voltage
V
GS
(V)
12
10
V
DS
GIPG270516FQ6F01FQVG
V
DS
(V)
V
DD
= 480V
I
D
= 10 A
600
500
8
6
4
2
0
0 4 8 12
400
300
200
100
16 Qg (nC)
Figure 2. Thermal impedance
Figure 4. Transfer characteristics
I
D
(A)
GIPG270516FQ6F01FTCH
20
V
DS
= 20 V
16
12
8
4
0
2 3 4 5 6 7 8 9 V
GS
(V)
Figure 6. Static drain-source on-resistance
R
DS(on)
(mΩ)
GIPG270516FQ6F01FRID
V
GS
= 10 V
390
380
370
360
350
0 2 4 6 8 10 I
D
(A)
DS11675 - Rev 2 page 5/13
STP11N60DM2
Electrical characteristics curves
C
(pF)
Figure 7. Capacitance variations
GIPG270516FQ6F01FCVR
10 3
10 2
10 1 f = 1 MHz
10 0
10 -1
10 -1 10 0 10 1
C iss
C oss
C rss
10 2 V
DS
(V)
Figure 9. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GIPG270516FQ6F01FRON
V
GS
=10 V
2.2
1.8
1.4
1.0
0.6
0.2
-75 -25 25 75 125 T
J
(°C)
Figure 11. Output capacitance stored energy
Eoss
(µJ )
GIPG270516FQ6F01FEOS
4
3
2
1
0
0 100 200 300 400 500 600 V
DS
(V)
Figure 8. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GIPG270516FQ6F01FVTH
I
D
= 250 μ A
1.1
1.0
0.9
0.8
0.7
-25 25 75 125 T
J
(°C)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GIPG270516FQ6F01FBDV
I
D
= 1 mA
1.08
1.04
1.00
0.96
0.92
-25 25 75 125 T
J
(°C)
Figure 12. Source-drain diode forward characteristics
V
SD
(V)
1.1
GIPG270516FQ6F01FSDF
1.0
T
J
= - 50 °C
T
J
= 25 °C
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8
T
J
= 150 °C
10 I
SD
(A)
DS11675 - Rev 2 page 6/13
STP11N60DM2
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF
D.U.T.
V
DD
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 14. Test circuit for gate charge behavior
12 V
V
GS pulse width
2200
μF
+
I
G
= CONST
2.7 kΩ
47 kΩ
1 kΩ
47 kΩ
100 nF
100 Ω
V
DD
1 kΩ
D.U.T.
V
G
AM01469v1
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
+
_
R
G
A A fast diode
B
B
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V (BR)DSS
V D
I DM
I D
V DD V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF
V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS11675 - Rev 2 page 7/13
4
STP11N60DM2
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS11675 - Rev 2 page 8/13
4.1
TO-220 type A package information
Figure 19. TO-220 type A package outline
STP11N60DM2
TO-220 type A package information
DS11675 - Rev 2
0015988_typeA_Rev_22 page 9/13
DS11675 - Rev 2
Dim.
E e e1
F
H1
J1
L b1 c
A b
D
D1
L1
L20
L30
øP
Q
STP11N60DM2
TO-220 type A package information
Table 9. TO-220 type A package mechanical data mm
Typ.
Min.
4.40
0.61
1.14
0.48
15.25
1.27
10.00
2.40
4.95
1.23
6.20
2.40
13.00
3.50
16.40
28.90
3.75
2.65
3.85
2.95
10.40
2.70
5.15
1.32
6.60
2.72
14.00
3.93
Max.
4.60
0.88
1.55
0.70
15.75
page 10/13
Revision history
Date
17-Jun-2016
06-Nov-2019
Revision
1
2
Table 10. Document revision history
Changes
First release.
Modified
Table 1. Absolute maximum ratings
Updated
Section 4.1 TO-220 type A package information
.
Minor text changes.
STP11N60DM2
DS11675 - Rev 2 page 11/13
STP11N60DM2
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
DS11675 - Rev 2 page 12/13
STP11N60DM2
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DS11675 - Rev 2 page 13/13
