STB16N90K5
Datasheet
N-channel 900 V, 280 mΩ typ., 15 A MDmesh K5 Power MOSFET in a D²PAK package
G(1)
TAB
2
1
3
D²PAK
D(2, TAB)
S(3)
AM01475V1
Features
Order code
STB16N90K5
V
DS
900 V
• Industry’s lowest R
DS(on)
x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
R
DS(on)
max.
330 mΩ
I
D
15 A
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Product status link
STB16N90K5
Product summary
Order code
Marking
Package
Packing
STB16N90K5
16N90K5
D²PAK
Tape and reel
DS12802 - Rev 2 - August 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1
STB16N90K5
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
D
(1)
P
TOT dv/dt
(2)
dv/dt
(3)
T j
T stg
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Operating junction temperature range
Storage temperature range
Parameter
1. Pulse width limited by safe operating area.
2. I
SD
≤ 15 A, di/dt ≤ 100 A/μs; V
DS
peak ≤ V
(BR)DSS
, V
DD
= 450 V.
3. V
DS
≤ 720 V.
Table 2. Thermal data
Symbol
R thj-case
R thj-pcb
(1)
Thermal resistance junction-case
Thermal resistance junction-pcb
Parameter
1. When mounted on a 1-inch² FR-4, 2 Oz copper board.
Symbol
I
AR
E
AS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by T jmax
)
Single pulse avalanche energy (starting T j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Value
±30
15
9
60
190
4.5
50
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.66
30
Unit
°C/W
°C/W
Value
5
380
Unit
A mJ
DS12802 - Rev 2 page 2/20
2
STB16N90K5
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4. On/off state
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 900 V
Zero gate voltage drain current
Gate-body leakage current
V
GS
= 0 V, V
DS
= 900 V, T
C
= 125 °C (1)
V
DS
= 0 V, V
GS
= ±20 V
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 µA
Static drain-source on-resistance V
GS
= 10 V, I
D
= 7.5 A
1. Defined by design, not subject to production test.
Min.
Typ.
Max.
Unit
900
1
V
µA
3
50
±10
4 5
280 330
µA
µA
V mΩ
Table 5. Dynamic
Symbol
C iss
C oss
C rss
Parameter
Input capacitance
Output capacitance V
DS
Test conditions
= 100 V, f = 1 MHz, V
GS
= 0 V
Min.
-
-
Typ.
1027
106
Max.
-
-
Unit pF pF
C
C o(er) o(tr)
(1)
(2)
Reverse transfer capacitance
Equivalent capacitance energy related
Equivalent capacitance time related
V
GS
= 0 V, V
DS
= 0 to 720 V
-
1.6
51
141 -
-
pF pF pF
R g
Q g
Q gs
Q gd
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge f = 1 MHz, I
V
DD
(see
D
= 0 A
= 720 V, I
D
charge behavior
= 15 A, V
)
GS
= 0 to 10 V
Figure 14. Test circuit for gate
1
-
-
-
4.9
29.7
7.3
17.7
9
-
-
-
Ω nC nC nC
1. C o(er)
is a constant capacitance value that gives the same stored energy as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
2. C o(tr)
is a constant capacitance value that gives the same charging time as C oss
while V
DS
is rising from 0 to 80% V
DSS
.
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 450 V, I
D
= 7.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 13. Test circuit for resistive load switching times
and
Figure 18. Switching time waveform )
Min.
Typ.
Max.
Unit
-
28.8
36
-
ns ns
-
46
9.8
-
ns ns
DS12802 - Rev 2 page 3/20
DS12802 - Rev 2
STB16N90K5
Electrical characteristics
Table 7. Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t rr
Q rr
I
RRM
I t
Q rr rr
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
I
I
SD
SD
Test conditions
= 15 A, V
GS
= 0 V
= 15 A, di/dt = 100 A/µs, V
DD
(see
= 60 V
Figure 15. Test circuit for inductive load switching and diode recovery times
I
SD
= 15 A, di/dt = 100 A/µs, V
DD
= 60 V,
T
J
= 150 °C
(see
Figure 15. Test circuit for inductive load switching and diode recovery times )
)
-
-
-
-
-
-
-
Min.
Typ.
Max.
Unit
15 A
60 A
1.5
458
8.13
35.5
546
9.2
33.7
V ns
µC
A ns
µC
A
Symbol
V
(BR)GSO
Table 8. Gate-source Zener diode
Parameter Test conditions
Gate-source breakdown voltage I
GS
= ±1 mA, I
D
= 0 A
Min.
Typ.
Max.
Unit
30 V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.
The Zener voltage facilitates efficient and cost-effective device integrity protection,thus eliminating the need for additional external componentry.
page 4/20
STB16N90K5
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GIPG231020180827SOA
10 1
Operation in this area is limited by R
DS(on)
10 0
10 -1
10 -1 10 0
T
T
J
≤150 °C
C
=25 °C
V
GS
=10 V single pulse
10 1 10 2 10 3
V
DS
(V) t p
=1 µs t p
=10 µs t p
=100 µs t p
=1 ms t p
=10 ms
Figure 2. Normalized transient thermal impedance
GC20540_ZTH
K
δ=0.5
δ=0.2
0.1
10 -1 0.05
0.02
0.01
Single pulse
10
-2
10
-5
10 -4 10 -3 10 -2 10 -1 t p (s)
Figure 3. Typical output characteristics
I
D
(A)
35
30
GIPG231020180825OCH
V
GS
=10V
V
GS
=9V
25
20
15
V
GS
=8V
10
5
0
0 4 8 12 16
V
GS
=7V
V
V
DS
GS
=6V
(V)
Figure 4. Typical transfer characteristics
I
D
(A)
35
30
25
20
15
10
5
0
4 5
V
DS
= 15 V
6 7
GIPG231020180826TCH
8 9 V
GS
(V)
Figure 5. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
1.10
I
D
= 1 mA
GIPG221020181225BDV
1.05
1.00
0.95
0.90
0.85
-75 -25 25 75 125 T
J
(°C)
Figure 6. Typical drain-source on-resistance
R
DS(on)
(mΩ)
310
GADG310720191006RON
300
290
280
270
260
250
0 2 4
V
GS
= 10 V
6 8 10 12 14 I
D
(A)
DS12802 - Rev 2 page 5/20
STB16N90K5
Electrical characteristics (curves)
Figure 7. Typical gate charge characteristics
V
DS
(V)
700
600
500
400
Q gs
300
200
100
0
0 6
V
DD
GADG300720191127QVG
= 720 V, I
D
= 15 A
V
GS
(V)
14
Q g
Q gd
12
10
8
6
4
12 18 24 30 36
2
Q
0 g
(nC)
Figure 8. Typical capacitances vs voltage
C
(pF)
GIPG231020180825CVR
10 3
C
ISS
10 2
10 1 f = 1 MHz
C
OSS
C
RSS
10 0
10 -1 10 0 10 1 10 2
V
DS
(V)
Figure 9. Normalized threshold voltage vs temperature
V
GS(th)
(norm.)
1.1
GIPG221020181223VTH
I
D
=250 μA
1.0
0.9
0.8
0.7
0.6
-75 -25 25 75 125 T
J
(°C)
Figure 10. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.5
V
GS
= 10 V
GIPG221020181224RON
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 T
J
(°C)
Figure 11. Maximum avalanche energy vs temperature
E
AS
(mJ)
360
GIPG231020180827EAS
Single pulse
I
D
= 5 A
V
DD
= 50 V
300
240
180
120
60
0
-75 -25 25 75 125 T
J
(°C)
Figure 12. Typical source-drain diode characteristics
V
SD
(V)
1.0
GIPG231020180825SDF
T
J
= -50 °C
0.9
0.8
T
J
= 25 °C
0.7
0.6
0.5
0.4
2 4 6 8
T
J
= 150 °C
10 12 14 I
SD
(A)
DS12802 - Rev 2 page 6/20
STB16N90K5
Test circuits
3
Test circuits
Figure 13. Test circuit for resistive load switching times
V
GS pulse width
V
D
R
G
R
L
+
2200
μF
3.3
μF V
DD
D.U.T.
Figure 14. Test circuit for gate charge behavior
V
DD
RL
V
GS pulse width
2200
μF
+
1 kΩ
I
G
= CONST
2.7 kΩ
47 kΩ
100 Ω D.U.T.
V
G
AM01469v10
AM01468v1
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
G
25 Ω
D
A
D.U.T.
S
B
A A fast diode
B
B
G
+
_
R
G
100 µH
D
D.U.T.
S
3.3
µF +
1000
µF
V
DD
AM01470v1
Figure 17. Unclamped inductive waveform
V
(BR)DSS
V
D
I
DM
I
D
V
DD
V
DD
AM01472v1
V i pulse width
V
D
L
I
D
+
2200
µF
3.3
µF V
DD
D.U.T.
AM01471v1
0
Figure 18. Switching time waveform t d(on) t on t r t d(off) t off t f
90% 90%
10%
V
GS
V
DS
90%
10%
0 10%
AM01473v1
DS12802 - Rev 2 page 7/20
4
STB16N90K5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
DS12802 - Rev 2 page 8/20
4.1
STB16N90K5
D²PAK (TO-263) package information
D²PAK (TO-263) package information
Figure 19. D²PAK (TO-263) type A package outline
DS12802 - Rev 2
0079457_26 page 9/20
DS12802 - Rev 2
Dim.
e1
H
J1
L
L1
L2
R
V2
D
D1
D2
E
E1
E2 e
A
A1 b b2 c c2
STB16N90K5
D²PAK (TO-263) package information
Table 9. D²PAK (TO-263) type A package mechanical data mm
Typ.
1.14
0.45
1.23
8.95
7.50
Min.
4.40
0.03
0.70
1.10
10.00
8.30
6.85
7.75
1.30
8.50
7.05
2.54
4.88
15.00
2.49
2.29
1.27
1.30
0.40
0°
5.28
15.85
2.69
2.79
1.40
1.75
8°
1.70
0.60
1.36
9.35
8.00
Max.
4.60
0.23
0.93
1.50
10.40
8.70
7.25
page 10/20
STB16N90K5
D²PAK (TO-263) package information
Figure 20. D²PAK (TO-263) type B package outline
DS12802 - Rev 2
0079457_26_B page 11/20
DS12802 - Rev 2
Dim.
c1 c2
D
D1
E
E1 e
A
A1 b b1 b2 c
L2
L3
L4
H
L
L1
STB16N90K5
D²PAK (TO-263) package information
Table 10. D²PAK (TO-263) type B mechanical data mm
Typ.
0.51
1.17
0.38
0.38
1.19
Min.
4.36
0
0.70
8.60
6.90
10.15
8.10
2.54 BSC
15.00
1.90
4.78
0.25
15.60
2.50
1.65
1.78
5.28
Max.
4.56
0.25
0.90
0.89
1.37
0.694
0.534
1.34
9.00
7.50
10.55
8.70
page 12/20
DS12802 - Rev 2
STB16N90K5
D²PAK (TO-263) package information
Figure 21. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint_26 page 13/20
4.2
D²PAK packing information
Figure 22. D²PAK tape outline
STB16N90K5
D²PAK packing information
DS12802 - Rev 2 page 14/20
DS12802 - Rev 2
A
STB16N90K5
D²PAK packing information
D
B
Full radius
Figure 23. D²PAK reel outline
T
40mm min. access hole at slot location
Tape slot in core for tape start
2.5mm min.width
C
N
G measured at hub
Dim.
E
F
K0
P0
P1
P2
R
T
W
A0
B0
D
D1
Min.
1.65
11.4
4.8
3.9
11.9
1.9
50
0.25
23.7
10.5
15.7
1.5
1.59
Tape
Table 11. D²PAK tape and reel mechanical data
Reel mm
Dim.
Max.
10.7
15.9
1.6
1.61
1.85
11.6
5.0
4.1
12.1
2.1
C
D
A
B
G
N
T
Base quantity
Bulk quantity
Min.
1.5
12.8
20.2
24.4
100
0.35
24.3
mm
AM06038v1
Max.
330
13.2
26.4
30.4
1000
1000 page 15/20
4.3
D²PAK type B packing information
Figure 24. D²PAK type B tape outline
STB16N90K5
D²PAK type B packing information
DS12802 - Rev 2
A
Figure 25. D²PAK type B reel outline
D
B
Full radius
T
40mm min. access hole at slot location
Tape slot in core for tape start
2.5mm min.width
C
N
G measured at hub
AM06038v1 page 16/20
Dim.
C
D
A
B
G
N
T
Table 12. D²PAK type B reel mechanical data mm
Min.
1.5
12.8
20.2
24.4
100
STB16N90K5
D²PAK type B packing information
Max.
330
13.2
26.4
30.4
DS12802 - Rev 2 page 17/20
Revision history
Date
23-Oct-2018
05-Aug-2019
Revision
1
2
Table 13. Document revision history
Changes
Initial release.
Updated Section 2.1 Electrical characteristics (curves) .
Minor text changes.
STB16N90K5
DS12802 - Rev 2 page 18/20
STB16N90K5
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4.1
D²PAK (TO-263) package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.3
D²PAK type B packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
DS12802 - Rev 2 page 19/20
STB16N90K5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
DS12802 - Rev 2 page 20/20
