STMicroelectronics OA4MPA Datasheet
Annonce
Annonce
OA1MPA, OA2MPA,
OA4MPA
High precision low-power CMOS op amp
Single (OA1MPA) Quad (OA4MPA)
Datasheet
-
production data
Energy saving
Guaranteed operation on low-voltage battery
SC70-5 QFN16 3x3
Applications
Wearable
Fitness and healthcare
Medical instrumentation
Dual (OA2MPA)
Description
DFN8 2x2
Features
MiniSO-8
Low offset voltage: 200 µV max.
Low power consumption: 10 µA at 5 V
Low supply voltage: 1.5 V to 5.5 V
Gain bandwidth product: 150 kHz typ.
Low input bias current: 1 pA typ.
Rail-to-rail input and output
EMI hardened operational amplifiers
High tolerance to ESD: 4 kV HBM
Extended temperature range: -40 to +125 °C
The OA1MPA, OA2MPA, OA4MPA series of single, dual, and quad operational amplifiers offer low-voltage operation, rail-to-rail input and output, and excellent precision (V io
lower than 200 µV at
25 °C).
These low power op amps benefit from
STMicroelectronics 5 V CMOS technology and offer an excellent speed/power consumption ratio
(150 kHz typical gain bandwidth) while consuming less than 14 µA at 5 V. The OA1MPA, OA2MPA,
OA4MPA series also feature an ultra-low input bias current.
The OA1MPA, OA2MPA, OA4MPA are respectively the single, dual and quad operational amplifier versions and are housed in the smallest industrial package.
The OA1MPA, OA2MPA, OA4MPA family is the ideal choice for wearable, fitness and healthcare applications.
Benefits
High precision without calibration
Order code
OA1MPA22C
OA2MPA22Q
OA2MPA34S
OA4MPA33Q
Temperature range
Table 1. Device summary
Package
-40° C to +125° C
SC70-5
DFN8 2x2
MiniSO8
QFN16 3x3
Packaging
Tape and reel
Marking
K1W
K1W
V712
K1W
February 2014
This is information on a product in full production.
DocID025992 Rev 1 1/28 www.st.com
Contents
Contents
OA1MPA, OA2MPA, OA4MPA
Absolute maximum ratings and operating conditions . . . . . . . . . . . . . 4
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input offset voltage drift over temperature . . . . . . . . . . . . . . . . . . . . . . . . 16
Long-term input offset voltage drift . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SC70-5 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DFN8 2x2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
MiniSO-8 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
QFN16 3x3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
2/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Pin connections
287
,1
,1
9&&
Figure 1. Pin connections (top view)
Single
,1
9&&
,1
SC70-5 (OA1MPA)
Dual
9&&
287
DFN8 2x2 (OA2MPA)
9&&
287
,1
,1
287
,1
,1
9&&
MiniSO-8 (OA2MPA)
Quad
9&&
287
,1
,1
,1
9&&
1&
,1
1&
,1
9&&
1&
,1
QFN16 3x3 (OA4MPA)
1.
The exposed pads of the QFN16 3x3 can be connected to VCC- or left floating.
DocID025992 Rev 1 3/28
28
Absolute maximum ratings and operating conditions
2
OA1MPA, OA2MPA, OA4MPA
Absolute maximum ratings and operating conditions
Symbol
V
CC
V id
V in
I in
T stg
R thja
R thjc
T j
ESD
Table 2. Absolute maximum ratings (AMR)
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Input current
(4)
Storage temperature
Thermal resistance junction-to-ambient
(5)(6)
SC70-5
DFN8 2x2
MiniSO8
QFN16 3x3
Thermal resistance junction-to-case DFN8 2x2
Value
6
±V
CC
V
CC-
- 0.2 to V
CC+
+ 0.2
10
-65 to +150
205
120
190
45
33
Maximum junction temperature
HBM: human body model
(7)
MM: machine model for OA1MPA
(8)
MM: machine model for OA2MPA
(8)
MM: machine model for OA4MPA
(8)
CDM: charged device model except MiniSO8
(9)
CDM: charged device model for MiniSO8
(9)
Latch-up immunity
150
4
150
200
300
1.5
1.3
200
Unit
V mA
°C
°C/W
°C kV
V kV mA
1.
All voltage values, except the differential voltage are with respect to the network ground terminal.
2.
The differential voltage is a non-inverting input terminal with respect to the inverting input terminal. The
OA2MPA and OA4MPA devices include an internal differential voltage limiter that clamps internal differential voltage at 0.5 V.
3.
V
CC
- V in
must not exceed 6 V, V in
must not exceed 6 V.
4.
Input current must be limited by a resistor in series with the inputs.
5.
Short-circuits can cause excessive heating and destructive dissipation.
6.
R th
are typical values.
7.
Human body model: 100 pF discharged through a 1.5 k
resistor between two pins of the device, done for all couples of pin combinations with other pins floating.
8.
Machine model: a 200 pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5
), done for all couples of pin combinations with other pins floating.
9.
Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to ground.
4/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Absolute maximum ratings and operating conditions
Symbol
V
CC
V icm
T oper
Table 3. Operating conditions
Parameter
Supply voltage
Common mode input voltage range
Operating free air temperature range
Value
1.5 to 5.5
V
CC-
- 0.1 to V
CC+
+ 0.1
-40 to +125
Unit
V
°C
DocID025992 Rev 1 5/28
28
Electrical characteristics OA1MPA, OA2MPA, OA4MPA
V
CC+
= 1.8 V with V
CC-
= 0 V, V
(unless otherwise specified) icm
= V
CC
/2, T = 25 °C, and R
L
= 10 k
connected to V
CC
/2
Symbol Parameter
Table 4. Electrical characteristics
Conditions
DC performance
V
V io
/
T Input offset voltage drift
I io
Input offset current
(V out
= V
CC
/2)
I
A
V
V io ib
CMR vd
OH
OL
Input offset voltage
(V icm
= 0 V)
Low level output voltage
T = 25 °C
-40 °C < T< 85 °C
-40 °C < T< 125 °C
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
Input bias current (V out
= V
CC
/2)
-40 °C < T< 125 °C
T = 25 °C Common mode rejection ratio
20 log (
V icm
/
V io
)
V icm
= 0 V to V
V out
= V
CC
/2, R
CC
,
L
> 1 M
Large signal voltage gain
V out
= 0.5 V to (V
CC
- 0.5 V)
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
High level output voltage
(V
OH
= V
CC
- V out
)
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
(1)
I
I out
CC
I
I sink (
V out source (
V
= V out
CC)
= 0 V)
Supply current (per channel,
V out
= V
CC
/2, R
L
> 1 M
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
AC performance
GBP
F u
F m
G m
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
R
L
= 10 k
, C
L
= 100 pF
Min.
69
61
95
85
100
6
4
5
3
Typ.
1
88
1
1
1
12
7
9
120
100
45
19
Max.
200
850
1200
10
10
(2)
300
(2)
10
(2)
300
(2)
75
80
40
60
14
16
Unit
V
V/°C pA dB mV mA
µA kHz
Degrees dB
6/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Electrical characteristics
Symbol
SR e n
Slew rate
(3)
Table 4. Electrical characteristics (continued)
Parameter Conditions
R
L
V out
= 10 k
, C
L
= 100 pF,
= 0.5 V to V
CC
- 0.5 V
Min.
f = 1 kHz
Equivalent input noise voltage f = 10 kHz
Typ.
0.04
100
Max.
Unit
V/
s
96
Hz t init
Initialization time
(4)
T = 25 °C
-40 °C < T< 125 °C
5
60 ms
1.
See
Section 4.4: Input offset voltage drift over temperature
.
2.
Guaranteed by characterization.
3.
Slew rate value is calculated as the average between positive and negative slew rates.
4.
Initialization time is defined as the delay after power-up to guarantee operation within specified performances. Guaranteed by design. See
Section 4.6: Initialization time .
DocID025992 Rev 1 7/28
28
Electrical characteristics OA1MPA, OA2MPA, OA4MPA
V
CC+
= 3.3 V with V
CC-
= 0 V, V
(unless otherwise specified) icm
= V
CC
/2, T = 25 °C, and R
L
= 10 k
connected to V
CC
/2
Symbol Parameter
Table 5. Electrical characteristics
Conditions
DC performance
V io
Input offset voltage
T = 25 °C
-40 °C < T< 85 °C
-40 °C < T< 125 °C
-40 °C < T< 125 °C
(1)
V io
/
T Input offset voltage drift
V io
Long-term input offset voltage drift
V
V
I
I io ib
CMR
A vd
OH
OL
T = 25 °C
(2)
Input offset current
(V out
= V
CC
/2)
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
Input bias current (V out
= V
CC
/2)
-40 °C < T< 125 °C
Common mode rejection ratio
20 log (
V icm
/
V io
)
V icm
R
L
= 0 V to V
> 1 M
CC
, V out
= V
CC
/2,
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
Large signal voltage gain
V out
= 0.5 V to (V
CC
- 0.5 V) -40 °C < T< 125 °C
T = 25 °C
High level output voltage
(V
OH
= V
CC
- V out
)
-40 °C < T< 125 °C
T = 25 °C
Low level output voltage
-40 °C < T< 125 °C
I
I out
CC
I
I sink (
V out source (
V
= V out
CC)
= 0 V)
Supply current (per channel,
V out
= V
CC
/2, R
L
> 1 M
)
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C
AC performance
GBP
F u
F m
G m
Gain bandwidth product
Unity gain frequency
Phase margin
Gain margin
SR Slew rate
(4)
R
R
L
L
V out
= 10 k
, C
L
= 10 k
, C
L
= 100 pF
= 100 pF,
= 0.5 V to V
CC
- 0.5 V
Min.
80
69
95
85
100
20
15
20
15
Typ.
0.3
1
1
1
1
100
34
26
9
120
100
45
19
0.05
Max.
75
80
40
60
Unit
200
850
1200
10
V
V/°C
V
--------------------------month
10
(3)
300
(3)
10
(3)
300
(3) pA
14
16 dB mV mA
µA kHz
Degrees dB
V/
s
8/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Electrical characteristics
Symbol
Table 5. Electrical characteristics (continued)
Parameter Conditions Min.
Typ.
Max.
Unit f = 1 kHz 100 e n
Equivalent input noise voltage f = 10 kHz 96
Hz t init
Initialization time
(5)
T = 25 °C
-40 °C < T< 125 °C
5
50 ms
1.
See
Section 4.4: Input offset voltage drift over temperature
.
2.
Typical value is based on the V io
drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. See
Long-term input offset voltage drift
.
3.
Guaranteed by characterization.
4.
Slew rate value is calculated as the average between positive and negative slew rates.
5.
Initialization time is defined as the delay after power-up which guarantees operation within specified performances.
Guaranteed by design. See Section 4.6: Initialization time .
DocID025992 Rev 1 9/28
28
Electrical characteristics OA1MPA, OA2MPA, OA4MPA
V
CC+
= 5 V with V
CC-
= 0 V, V icm
= V
CC
(unless otherwise specified)
/2, T = 25 °C, and R
L
= 10 k
connected to V
CC
/2
Symbol Parameter
Table 6. Electrical characteristics
Conditions
DC performance
T = 25 °C
V io
Input offset voltage -40 °C < T< 85 °C
V io
/
T Input offset voltage drift
V io
-40 °C < T< 125 °C
-40 °C < T< 125 °C
Long-term input offset voltage drift
T = 25 °C
(2)
(1)
I
I
A
V
V
I io ib
CMR
SVR vd
EMIRR
OH
OL out
I
I
Input offset current
(V out
= V
CC
/2)
T = 25 °C
-40 °C < T< 125 °C
Input bias current
(V out
= V
CC
/2)
T = 25 °C
-40 °C < T< 125 °C
Common mode rejection ratio
20 log (
V icm
/
V io
)
V icm
= 0 V to V
CC
,
V out
= V
CC
/2, R
L
> 1 M
T = 25 °C
-40 °C < T< 125 °C
Supply voltage rejection ratio
20 log (
V
CC
/
V io
)
V
CC
R
L
= 1.5 to 5.5 V, V
> 1 M
ic
= 0 V,
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
Large signal voltage gain
V out
= 0.5 V to (V
CC
- 0.5 V) -40 °C < T< 125 °C
EMI rejection ratio
EMIRR = 20 log
(V
RFpeak
/
V io)
High level output voltage
(V
OH
= V
CC
- V out
)
V
RF = 100 mVRFpeak, f = 400 MHz
V
RF = 100 mVRFpeak, f = 900 MHz
V
RF = 100 mVRFpeak, f = 1800 MHz
V
RF = 100 mVRFpeak, f = 2400 MHz
T = 25 °C
-40 °C < T< 125 °C
T = 25 °C
Low level output voltage sink
(V out
= V
CC
)
-40 °C < T< 125 °C
T = 25 °C
-40 °C < T< 125 °C source (
V out
= 0 V)
T = 25 °C
-40 °C < T< 125 °C
Min.
Typ.
Max.
Unit
35
20
35
20
71
71
95
85
74
73
1
94
1
1
1
0.7
200
850
1200
10
V
V/°C
V
--------------------------month
10
(3)
300
(3)
10
(3)
300
(3) pA
90 dB
38
(4)
50
(4)
60
(4)
63
(4)
75
80
40
60 mV
56
45 mA
10/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Electrical characteristics
Symbol
Table 6. Electrical characteristics (continued)
Parameter Conditions
I
CC
Supply current (per channel,
V out
= V
CC
/2, R
L
> 1 M
)
T = 25 °C
-40 °C < T< 125 °C
AC performance
Min.
Typ.
Max.
10 14
16
GBP
F u
F m
G m
SR e n
Gain bandwidth product
Unity gain frequency
R
L
= 10 k
, C
L
= 100 pF
Phase margin
Gain margin
Slew rate
(5)
R
L
V out
= 10 k
, C
L
= 100 pF,
= 0.5 V to V
CC
- 0.5 V
Low-frequency peak-to-peak input noise
Bandwidth: f = 0.1 to 10 Hz
110 150
120
45
19
0.06
10
Unit
µA kHz
Degrees dB
V/
s
µV pp e n
Equivalent input noise voltage f = 1 kHz f = 10 kHz
100
96
Hz
THD+N t init
Total harmonic distortion + noise
Initialization time
(6) f in
R
L
= 1 kHz, A
CL
= 1,
= 100 k
, V icm
= (V
CC
- 1 V)/2,
BW = 22 kHz, V out
= 0.5 V pp
T = 25 °C
-40 °C < T< 125 °C
0.008
5
50
% ms
1.
See
Section 4.4: Input offset voltage drift over temperature
.
2.
Typical value is based on the V io
drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and
Long-term input offset voltage drift .
3.
Guaranteed by characterization.
4.
Tested on SC70-5 package.
5.
Slew rate value is calculated as the average between positive and negative slew rates.
6.
Initialization time is defined as the delay after power-up to guarantee operation within specified performances. Guaranteed by design. See
Section 4.6: Initialization time
.
DocID025992 Rev 1 11/28
28
Electrical characteristics OA1MPA, OA2MPA, OA4MPA
Figure 2. Supply current vs. supply voltage at
V icm
= V
CC
/2
Figure 3. Input offset voltage distribution at
V
CC
= 5 V, V icm
= V
CC
/2
Figure 4. Input offset voltage distribution at
V
CC
= 3.3 V, V icm
= V
CC
/2
30
25
VCC = 3.3 V
Vicm = 1.65 V
T = 25 ˚C
20
15
10
5
0
-250 -200 -150 -100 -50 0 50 100
Input offset voltage (µV)
150 200 250
Figure 5. Input offset voltage temperature coefficient distribution
Figure 6. Input offset voltage vs. input common mode voltage
Figure 7. Input offset voltage vs. temperature
12/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Electrical characteristics
Figure 8. Output current vs. output voltage at
V
CC
= 1.5 V
Figure 9. Output current vs. output voltage at
V
CC
= 5 V
Figure 10. Output current vs. supply voltage Figure 11. Bode diagram at V
CC
= 1.5 V
Figure 12. Bode diagram at V
CC
= 5 V Figure 13. Closed-loop gain diagram vs. capacitive load
DocID025992 Rev 1 13/28
28
Electrical characteristics
Figure 14. Positive slew rate
OA1MPA, OA2MPA, OA4MPA
Figure 15. Negative slew rate
Figure 16. Slew rate vs. supply voltage Figure 17. Noise vs. frequency
Figure 18. 0.1 Hz to 10 Hz noise Figure 19. THD+N vs. frequency
14/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA
Figure 20. THD+N vs. output voltage
Electrical characteristics
Figure 21. Output impedance vs. frequency in closed-loop configuration
DocID025992 Rev 1 15/28
28
Application information OA1MPA, OA2MPA, OA4MPA
The OA1MPA, OA2MPA, and OA4MPA series of devices can operate from 1.5 V to 5.5 V.
The parameters are fully specified for 1.8 V, 3.3 V, and 5 V power supplies. However, they are very stable in the full V
CC
range and several characterization curves show OA1MPA,
OA2MPA, and OA4MPA device characteristics at 1.5 V. In addition, the main specifications are guaranteed in the extended temperature range from -40 °C to +125 °C.
The OA1MPA, OA2MPA, and OA4MPA devices have a rail-to-rail input, and the input common mode range is extended from V
CC-
- 0.1 V to V
CC+
+ 0.1 V.
4.4
The output levels of the OA1MPA, OA2MPA, and OA4MPA operational amplifiers can go close to the rails: to a maximum of 40 mV below the upper rail and to a maximum of 75 mV above the lower rail when a 10 k
resistive load is connected to V
CC
/2.
Input offset voltage drift over temperature
The maximum input voltage drift over the temperature variation is defined as the offset variation related to offset value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain, and the amplifier input offset is a major contributor to the chain accuracy. The signal chain accuracy at 25 °C can be compensated during production at application level. The maximum input voltage drift over temperature enables the system designer to anticipate the effect of temperature variations.
The maximum input voltage drift over temperature is computed using Equation 1 .
Equation 1
V
T io
-----------= max
V io
T – V io
25
C
T 25
C
--------------------------------------------------
– with T = -40 °C and 125 °C.
The datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a C pk
(process capability index) greater than 1.33.
16/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Application information
To evaluate product reliability, two types of stress acceleration are used:
Voltage acceleration, by changing the applied voltage
Temperature acceleration, by changing the die temperature (below the maximum junction temperature allowed by the technology) with the ambient temperature.
The voltage acceleration has been defined based on JEDEC results, and is defined using
Equation 2 .
Equation 2
A
FV
= e
V
S
– V
U
Where:
A
FV
is the voltage acceleration factor
is the voltage acceleration constant in 1/V, constant technology parameter (
= 1)
V
S
is the stress voltage used for the accelerated test
V
U
is the voltage used for the application
The temperature acceleration is driven by the Arrhenius model, and is defined in Equation 3 .
Equation 3
A
FT
= e
E a
-----k
T
U
– ------
T
S
Where:
A
FT
is the temperature acceleration factor
E a
is the activation energy of the technology based on the failure rate k is the Boltzmann constant (8.6173 x 10
-5
eV.K
-1
)
T
U
is the temperature of the die when V
U
is used (K)
T
S
is the temperature of the die under temperature stress (K)
The final acceleration factor, A
F
, is the multiplication of the voltage acceleration factor and the temperature acceleration factor ( Equation 4 ).
Equation 4
A
F
= A
FT
A
FV
A
F is calculated using the temperature and voltage defined in the mission profile of the product. The A
F
value can then be used in Equation 5 to calculate the number of months of use equivalent to 1000 hours of reliable stress duration.
DocID025992 Rev 1 17/28
28
Application information OA1MPA, OA2MPA, OA4MPA
Equation 5
Months = A
F
1000 h
12 months
24 h
365.25 days
To evaluate the op amp reliability, a follower stress condition is used where V
CC
is defined as a function of the maximum operating voltage and the absolute maximum rating (as recommended by JEDEC rules).
The V io
drift (in µV) of the product after 1000 h of stress is tracked with parameters at different measurement conditions (see Equation 6 ).
Equation 6
V
CC
= maxV op
with V icm
= V
CC
2
The long term drift parameter ( V io
), estimating the reliability performance of the product, is obtained using the ratio of the V io
(input offset voltage value) drift over the square root of the calculated number of months ( Equation 7 ).
Equation 7
V io
=
V io drift
-----------------------------months
where V io
drift is the measured drift value in the specified test conditions after 1000 h stress duration.
18/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Application information
The OA1MPA, OA2MPA, and OA4MPA series of devices use a proprietary trimming topology that is initiated at each device power-up and allows excellent V io
performance to be achieved. The initialization time is defined as the delay after power-up which guarantees operation within specified performances. During this period, the current consumption ( I
CC and the input offset voltage ( V io
) can be different to the typical ones.
)
Figure 22. Initialization phase
V
CC
(V)
1.8
3.3
5
The initialization time is V
CC
and temperature dependent.
measurement results for different supply voltages and for temperatures varying from -40 °C to 125 °C.
Table 7. Initialization time measurement results
Temperature: -40 °C Temperature: 25 °C Temperature: 125 °C
T init
(ms) I
CC phase 1 (mA) T init
(ms) I
CC
phase 1 (mA) T init
(ms) I
CC
phase 1 (mA)
37 0.33
3.2
0.40
0.35
0.46
2.9
2.4
1.4
3.2
0.95
0.85
1.3
2.4
0.34
0.31
1.2
2.9
For correct operation, it is advised to add a 10 nF decoupling capacitors as close as possible to the power supply pins.
DocID025992 Rev 1 19/28
28
Application information OA1MPA, OA2MPA, OA4MPA
4.8 Macromodel
Accurate macromodels of the OA1MPA, OA2MPA, and OA4MPA devices are available on the STMicroelectronics’ website at www.st.com
. These model are a trade-off between accuracy and complexity (that is, time simulation) of the OA1MPA, OA2MPA, and OA4MPA op amp. They emulate the nominal performance of a typical device within the specified operating conditions mentioned in the datasheet. They also help to validate a design approach and to select the right op amp, but they do not replace on-board measurements .
20/28 DocID025992 Rev 1
OA1MPA, OA2MPA, OA4MPA Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
® specifications, grade definitions and product status are available at: www.st.com
.
ECOPACK
®
is an ST trademark.
DocID025992 Rev 1 21/28
28
Package information
5.1
OA1MPA, OA2MPA, OA4MPA
SC70-5 package information
Figure 23. SC70-5 package mechanical drawing
SIDE VIEW
DIMENSIONS IN MM
GAUGE PLANE
COPLANAR LEADS
SEATING PLANE
22/28
Symbol c
D
E
E1
A
A1
A2 b
L
< e e1
TOP VIEW
Min.
0.10
1.80
1.80
1.15
0.80
0
0.80
0.15
0.26
0°
Table 8. SC70-5 package mechanical data
Dimensions
Millimeters
Typ.
0.90
2.00
2.10
1.25
0.65
1.30
0.36
Max.
0.22
2.20
2.40
1.35
1.10
0.10
1.00
0.30
0.46
8°
Min.
0.032
0.032
0.006
0.004
0.071
0.071
0.045
0.010
0°
Inches
Typ.
0.035
0.079
0.083
0.049
0.025
0.051
0.014
DocID025992 Rev 1
Max.
0.043
0.004
0.039
0.012
0.009
0.087
0.094
0.053
0.018
8°
OA1MPA, OA2MPA, OA4MPA Package information
Figure 24. DFN8 2x2 package mechanical drawing
'
%
3,1,1'(;$5($
& [
7239,(:
&
&
3,1,1'(;$5($
6,'(9,(:
H
6($7,1*
3/$1(
&
ESOFV
& $ %
3LQ,'
Ref.
A
A1 b
D
E e
L
N
%277209,(:
*$06&%
Min.
0.70
0.00
0.15
0.045
Table 9. DFN8 2x2 package mechanical data
Dimensions
Millimeters
Typ.
0.75
0.02
0.20
2.00
2.00
0.50
0.55
8
Max.
0.80
0.05
0.25
0.65
Min.
0.028
0.000
0.006
0.018
Inches
Typ.
0.030
0.001
0.008
0.079
0.079
0.020
0.022
8
Max.
0.031
0.002
0.010
0.026
DocID025992 Rev 1 23/28
28
Package information OA1MPA, OA2MPA, OA4MPA
Figure 25. MiniSO-8 package mechanical drawing
24/28
Ref.
e
L
L1
L2 k ccc c
D
E
E1
A
A1
A2 b
Min.
0
0.75
0.22
0.08
2.80
4.65
2.80
0.40
Table 10. MiniSO-8 package mechanical data
Dimensions
Millimeters
Typ.
Min.
0.85
3.00
4.90
3.00
0.65
0.60
0.95
0.25
Max.
0.23
3.20
5.15
3.10
1.1
0.15
0.95
0.40
0.80
0
0.030
0.009
0.003
0.11
0.183
0.11
0.016
Inches
Typ.
0.033
0.118
0.193
0.118
0.026
0.024
0.037
0.010
0 ° 8 °
0.10
0 °
DocID025992 Rev 1
Max.
0.043
0.006
0.037
0.016
0.009
0.126
0.203
0.122
0.031
8 °
0.004
OA1MPA, OA2MPA, OA4MPA
5.4 QFN16 3x3 package information
Package information
Figure 26. QFN16 3x3 package mechanical drawing
DocID025992 Rev 1
4)1B[B9BB&
25/28
28
Package information OA1MPA, OA2MPA, OA4MPA b
D
D2
E
E2
A
A1
A3 e
L
Ref.
Table 11. QFN16 3x3 mm package mechanical data (pitch 0.5 mm)
Dimensions
Millimeters Inches
Min.
0.80
0
Typ.
0.90
Max.
1.00
0.05
Min.
0.031
0
Typ.
0.035
0.18
2.90
1.50
2.90
1.50
0.30
0.20
3.00
3.00
0.50
0.30
3.10
1.80
3.10
1.80
0.50
0.007
0.114
0.059
0.114
0.059
0.012
0.008
0.118
0.118
0.020
Max.
0.039
0.002
0.012
0.122
0.071
0.122
0.071
0.020
Figure 27. QFN16 3x3 footprint recommendation
26/28 DocID025992 Rev 1
4)1B[B9BIRRWSULQWBB&
OA1MPA, OA2MPA, OA4MPA
Date
28-Feb-2014
Table 12. Document revision history
Revision Changes
1 Initial release
Revision history
DocID025992 Rev 1 27/28
28
OA1MPA, OA2MPA, OA4MPA
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