SCTL35N65G2V
Datasheet
Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 40 A in a PowerFLAT 8x8 HV package
5
4
3
2
1
PowerFLAT 8x8 HV
Gate(1)
Driver source(2)
Drain(5)
Features
Order code
SCTL35N65G2V
V
DS
650 V
• Very fast and robust intrinsic body diode
• Low capacitances
• Source sensing pin for increased efficiency
R
DS(on)
max.
67 mΩ
I
D
40 A
Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control
Power source(3, 4)
NG1DS2PS34D5
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link
SCTL35N65G2V
Product summary
Order code SCTL35N65G2V
Marking
Package
Packing
35N65G2V
PowerFLAT 8x8 HV
Tape and reel
DS13474 - Rev 1 - December 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTL35N65G2V
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
I
V
V
DS
GS
D
(1)
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operating range)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(2)
P
TOT
T stg
T
J
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Value limited by package.
2. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
R thJC
R thJB
(1)
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-board
1. When mounted on an 1-inch² FR-4, 2 Oz copper board.
Value
650
-10 to 22
-5 to 20
40
40
160
417
-55 to 175
A
A
W
°C
°C
Unit
V
V
Value
0.36
45
Unit
°C/W
°C/W
DS13474 - Rev 1 page 2/14
2
SCTL35N65G2V
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified).
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current V
GS
= 0 V, V
DS
= 650 V
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 20 V, I
D
= 20 A
Static drain-source on-resistance V
GS
= 18 V, I
D
= 20 A
V
GS
= 20 V, I
D
= 20 A, T
J
= 175 °C
Min.
Typ.
Max.
Unit
650 V
1.8
3.2
45
5 µA
±100 nA
5.0
67
V
55
58 mΩ
Symbol
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
Table 4. Dynamic, based on HiP247 package option
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
GS
= 0 V, V
DS
= 400 V, f = 1 MHz f = 1 MHz, I
D
= 0 A
V
DD
= 400 V, I
D
= 20 A, V
GS
= 0 to 20 V -
-
-
Min.
Typ.
Max.
Unit
1370 pF
-
-
-
125
30
2
-
-
pF pF
Ω
73
14
27
-
-
nC nC nC
Symbol
E on
E off
Table 5. Switching energy (inductive load), based on HiP247 package option
Parameter
Turn-on switching energy
Turn-off switching energy
Test conditions
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 20 V
Min.
Typ.
Max.
Unit
100 µJ
35 µJ
Symbol t d(on) t f t d(off) t r
Table 6. Switching times, based on HiP247 package option
Parameter
Turn-on delay time
Fall time
Turn-off delay time
Rise time
Test conditions
V
DD
= 400 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 20 V
Min.
Typ.
Max.
Unit
16 ns
14 ns
-
35
9 -
ns ns
DS13474 - Rev 1 page 3/14
SCTL35N65G2V
Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Table 7. Reverse diode characteristics, based on HiP247 package option
Parameter
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
V
GS
= 0 V, I
F
= 20 A,
V
DD
= 400 V, I
F
= 20 A, di/dt = 1000 A/µs
Min.
Typ.
Max.
Unit
3.3
V
18 ns
-
85
7 -
nC
A
DS13474 - Rev 1 page 4/14
SCTL35N65G2V
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG181120201327SOA
I
DM
10 2
10 1
10 0
10 -1
10 -1
R
DS(on)
max.
10 0
T
J
= 175 °C
T
C
= 25 °C
Single pulse
10 1 10 2 t p
=1µs t p
=10µs t p
=1ms t t p
=10ms p
=100ms
V
(BR)DSS
V
DS
(V)
Figure 3. Output characteristics (T
J
= 25 °C), based on HiP247 package option
I
D
(A) V
GS
= 20 V
V
GS
= 16 V
SIC140220171450OC25
V
GS
= 14 V
80
V
GS
= 12 V
60
40
V
GS
= 10 V
20
0
0 2 4 6 8
V
GS
= 8 V
V
GS
= 6 V
10 12 V
DS
(V)
I
D
(A)
Figure 5. Transfer characteristics, based on HiP247 package option
GADG140220171450TCH
V
DS
= 10 V
80
60
40
T
J
= 175 °C
20
0
0 4 8
T
J
= 25 °C
12 16 V
GS
(V)
Figure 2. Thermal impedance
Z thJC
(°C/W) duty=0.5
0.4
0.3
GADG181120201419ZTH
10 -1
0.1
0.2
10 -2
0.05
R thJC
= 0.36 °C/W duty = t on
/ T
Single pulse t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Output characteristics (T
J
= 175 °C), based on HiP247 package option
I
D
(A)
SIC140220171450OC175
80
V
V
V
GS
GS
GS
= 20 V
= 16 V
= 14 V
V
GS
= 12 V
60
V
GS
= 10 V
40
V
GS
= 8 V
20
0
0 2 4 6 8 10 12
V
GS
= 6 V
V
DS
(V)
Figure 6. Gate charge vs gate-source voltage, based on HiP247 package option
V
GS
(V)
GADG140220171452QVG
20
16
12
V
I
DD
D
= 400 V
= 20 A
8
4
0
0 10 20 30 40 50 60 70 Q g
(nC)
DS13474 - Rev 1 page 5/14
C
(pF)
Figure 7. Capacitance variations, based on HiP247 package option
GADG140220171452CVR
10 3
C
ISS
10 2 f = 1 MHz
10 1
10 -1 10 0 10 1 10 2
C
OSS
C
RSS
V
DS
(V)
Figure 9. Switching energy vs junction temperature, based on HiP247 package option
E
(μJ)
140
SIC140220171455SLT
E tot
120
100
80
E on
V
DD
= 400 V, R
G
= 4.7 Ω,
I
D
= 20 A, V
GS
= -5 to 20 V
60
40
20
0
0 50 100
E off
150 T
J
(°C)
Figure 11. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
1.4
GADG140220171458VTH
I
D
= 1 mA
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
SCTL35N65G2V
Electrical characteristics (curves)
Figure 8. Switching energy vs drain current, based on HiP247 package option
E
(μJ)
SIC140220171454SLC
E tot
1000
V
DD
= 400 V,
R
G
= 4.7 Ω,
V
GS
= -5 to 20 V
800
E on
600
400
E off
200
0
0 20 40 60 I
D
(A)
Figure 10. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
1.06
I
D
= 1 mA
GADG140220171455BDV
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 175 T
J
(°C)
Figure 12. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG140220171458RON
V
GS
= 20 V
2.0
1.5
1.0
0.5
0.0
-75 -25 25 75 125 175 T
J
(°C)
DS13474 - Rev 1 page 6/14
Figure 13. Reverse conduction characteristics
(T
J
= 25 °C), based on HiP247 package option
I
D
(A)
-20
V
GS
= -5 V
V
GS
= -2 V
V
GS
= 0 V
SIC140220171501RRT25
V
GS
= 10 V
-40
V
GS
= 5 V
-60
-80
-100
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
SCTL35N65G2V
Electrical characteristics (curves)
Figure 14. Reverse conduction characteristics
(T
J
= 175 °C), based on HiP247 package option
I
D
(A)
-20
V
GS
= -5 V
V
GS
= -2 V
V
GS
= 0 V
SIC140220171502RRT175
-40
V
GS
= 10 V
V
GS
= 5 V
-60
-80
-100
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
DS13474 - Rev 1 page 7/14
3
3.1
SCTL35N65G2V
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
PowerFLAT 8x8 HV type A package information
Figure 15. PowerFLAT 8x8 HV type A package outline
DS13474 - Rev 1
8222871_Rev_4 page 8/14
Ref.
E2 e
L
E
D2
E1
A
A1
A3 b
D
SCTL35N65G2V
PowerFLAT 8x8 HV type A package information
Table 8. PowerFLAT 8x8 HV type A mechanical data
Min.
0.75
0.00
0.10
0.90
7.90
7.90
7.10
2.65
4.25
0.40
Dimensions (in mm)
Typ.
0.85
0.20
1.00
8.00
8.00
7.20
2.75
4.35
2.00 BSC
0.50
Figure 16. PowerFLAT 8x8 HV footprint
Max.
0.95
0.05
0.30
1.10
8.10
8.10
7.30
2.85
4.45
0.60
Note: All dimensions are in millimeters.
DS13474 - Rev 1
8222871_REV_4_footprint page 9/14
3.2
PowerFLAT 8x8 HV packing information
Figure 17. PowerFLAT 8x8 HV tape
P0 (4.0±0.1) P2 (2.0±0.1)
D0 ( 1.55±0.05) T (0.30±0.05)
SCTL35N65G2V
PowerFLAT 8x8 HV packing information
E (1.75±0.1)
D1 ( 1.5 Min)
P1 (12.00±0.1) A0 (8.30±0.1)
K0 (1.10±0.1)
Note:
Note: Base and Bulk qu antity 3000 pcs
All dimensions are in millimeters.
Figure 18. PowerFLAT 8x8 HV package orientation in carrier tape
Pin 1 identification
8229819_Tape_revA
ST
ST ST ST
DS13474 - Rev 1 page 10/14
Figure 19. PowerFLAT 8x8 HV reel
SCTL35N65G2V
PowerFLAT 8x8 HV packing information
Note: All dimensions are in millimeters.
8229819_Reel_revA
DS13474 - Rev 1 page 11/14
Revision history
Date
02-Dec-2020
Version
1
Table 9. Document revision history
Changes
First release.
SCTL35N65G2V
DS13474 - Rev 1 page 12/14
SCTL35N65G2V
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
PowerFLAT 8x8 HV type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.2
PowerFLAT 8x8 HV packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
DS13474 - Rev 1 page 13/14
SCTL35N65G2V
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks . All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved
DS13474 - Rev 1 page 14/14
