SCTW40N120G2VAG
Datasheet
Automotive
‑
grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 package
Features
Order code
SCTW40N120G2VAG
V
DS
1200 V
R
DS(on)
max.
105 mΩ
I
D
33 A
G(1)
HiP247
D(2, TAB)
S(3)
1
2
3
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (T
J
= 200 °C)
Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd
generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link
SCTW40N120G2VAG
Product summary
Order code SCTW40N120G2VAG
Marking
Package
Packing
SCT40N120G2VAG
HiP247
Tube
DS12970 - Rev 5 - November 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTW40N120G2VAG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
V
I
DS
GS
D
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operating values)
Gate-source voltage (pulsed, t p
= 25 ns repetitive overshoot during switching for an accumulated time of 10 h)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT
T stg
T
J
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1200
-10 to 22
-5 to 18
-11 to 25
33
25
100
290
-55 to 200
Unit
V
V
A
A
W
°C
°C
Value
0.6
40
Unit
°C/W
°C/W
DS12970 - Rev 5 page 2/12
2
SCTW40N120G2VAG
Electrical characteristics
Electrical characteristics
T
C
= 25 °C unless otherwise specified.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current V
DS
= 1200 V, V
GS
= 0 V
Gate-body leakage current
Gate threshold voltage
Static drain-source on-resistance
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 18 V, I
D
= 20 A
V
GS
= 18 V, I
D
= 20 A, T
J
= 200 °C
Symbol
E on
E off
Parameter
Turn-on switching energy
Turn-off switching energy
Table 5. Switching energy
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
1200 V
1.9
3.2
75
10 µA
±100 nA
5.0
105
V mΩ
195
Symbol
C iss
C oss
C rss
Q g
Q gs
Q gd
R
G
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
V
Table 4. Dynamic
DS
Test conditions
= 800 V, f = 1 MHz, V f = 1 MHz, I
D
= 0 A
GS
= 0 V
V
DS
= 800 V, V
GS
= -5 to 18 V, I
D
= 20 A
-
-
-
Min.
Typ.
Max.
Unit
1230 pF
56 pF
-
-
15
63
15
20
1
-
-
-
-
nC
Ω pF nC nC
Min.
Typ.
Max.
Unit
235 µJ
77 µJ
Symbol t d(on) t r t d(off) t f
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
-
11
5
-
ns ns
-
18
13 -
ns ns
DS12970 - Rev 5 page 3/12
SCTW40N120G2VAG
Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Reverse SiC diode characteristics
Test conditions
I
SD
= 20 A, V
GS
= 0 V
I
SD
= 20 A, di/dt = 2000 A/µs,
V
DD
= 800 V, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
3.4
V
19 ns
-
132
20 -
nC
A
DS12970 - Rev 5 page 4/12
SCTW40N120G2VAG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG040420191022FSOA t p
=1 µs
10 1
DS(on)
in this area
10 0
R
DS(on)
max.
t p
=10 µs t p
=100 µs
V
(BR)DSS t p
=1 ms t p
=10 ms
10 -1
10 -1 10 0
T
C
= 25 °C
T
J
≤ 200 °C single pulse
10 1 10 2 10 3
V
DS
(V)
Figure 3. Output characteristics (T
J
= -50 °C)
I
D
(A)
60
V
GS
= 18, 20 V
GADG091120200800OC-50
16V 14V
30
20
50
40 12V
10
0
0 2 4 6
10V
8V
8 10 12 V
DS
(V)
Figure 5. Output characteristics (T
J
= 200 °C)
I
D
(A)
60
GADG041120201238OC200
30
20
50
40
V
GS
=12, 14, 16, 18, 20 V
12V
10V
8V
10
0
0 2 4 6 8 10 12
6V
V
DS
(V)
Figure 2. Maximum transient thermal impedance
GADG040420191023ZTH
Z thJC
(°C/W) duty=0.5
4
3
2
10 -1
0.05
10 -2
Single pulse
R thJC
= 0.6 °C/W duty = t on
/ T t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Output characteristics (T
J
= 25 °C)
I
D
(A)
60
V
GS
= 16, 18, 20 V
GADG041120201238OC25
14V
12V
30
20
50
40
10V
10
0
0 2 4 6
8V
6V
8 10 12 V
DS
(V)
I
D
(A)
Figure 6. Transfer characteristics
GADG040420191026TCH
V
DS
= 12 V
80
T j
= 25 °C
60
40
T j
= 200 °C
20
T j
= -50 °C
0
2 4 6 8 10 12 14 16 18 V
GS
(V)
DS12970 - Rev 5 page 5/12
P
TOT
(W)
300
Figure 7. Total power dissipation
GADG040420191027PDT
T
J
= 200 °C
250
200
150
100
50
0
-75 -25 25 75 125 175 T
C
(°C)
C
(pF)
Figure 9. Capacitance variations
GADG220320190909CVR
10 3
C
ISS
10 2
C
OSS f = 1 MHz
10 1
10 -1 10 0 10 1 10 2 10 3
C
RSS
V
DS
(V)
Figure 11. Switching energy vs junction temperature
E
(μJ)
500
GADG220320190922SLT
V
DD
R
G
= 800 V, I
D
= 20 A,
= 4.7 Ω, V GS = -5 to 18 V E ts
E on
400
300
200
100
0
0 50 100 150
E off
200 T
J
(°C)
SCTW40N120G2VAG
Electrical characteristics (curves)
Figure 8. Gate charge vs gate-source voltage
V
GS
(V)
GADG220320190908QVG
15
V
DD
= 800 V
I
D
= 20 A
10
5
0
-5
0 10 20 30 40 50 60 Q g
(nC)
Figure 10. Switching energy vs drain current
E
(μJ)
GADG220320190920SLC
V
DD
= 800 V, R
G
= 4.7 Ω
E ts
V
GS
= -5 to 18 V
800
E on
600
400
200
0
0
E off
10 20 30 40 I
D
(A)
Figure 12. Normalized V
(BR)DSS
vs temperature
V
(BR)DSS
(norm.)
GADG040420191240BDV
I
D
= 1 mA
1.06
1.04
1.02
1.00
0.98
0.96
-75 -25 25 75 125 175 T
J
(°C)
DS12970 - Rev 5 page 6/12
SCTW40N120G2VAG
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
GADG040420191047RON
V
GS
= 18 V
2.6
2.2
1.8
1.4
1.0
0.6
-75 -25 25 75 125 175 T
J
(°C)
Figure 14. Normalized gate threshold voltage vs temperature
V
GS(th)
(norm.)
GADG040420191047VTH
I
D
= 250 μA
1.4
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
Figure 15. Reverse conduction characteristics
(T
J
= -50 °C)
I
D
(A) V
GS
= -5 V
-20
V
GS
= -3 V
GADG260320191007SDF_-50
-40
-60
-80
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 0 V
-100
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
Figure 16. Reverse conduction characteristics (T
J
= 25 °C)
I
D
(A) V
GS
= -5 V
-20
V
GS
= -3 V
V
GS
= 0 V
GADG220320190904SDF_25
-40
-60
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-80
-100
-7 -6 -5 -4 -3 -2 -1
T j
= -50 °C
V
DS
(V)
Figure 17. Reverse conduction characteristics (T
J
= 200 °C)
I
D
(A) V
GS
= -5 V
V
GS
= -3 V
-20
V
GS
= 0 V
GADG040420191058RCC200
-40
-60
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
-80
-100
-7 -6 -5 -4 -3 -2 -1 V
DS
(V)
DS12970 - Rev 5 page 7/12
3
3.1
SCTW40N120G2VAG
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
HiP247 package information
Figure 18. HiP247 package outline
DS12970 - Rev 5
8581091_4 page 8/12
DS12970 - Rev 5
Dim.
e
L
L1
L2
P
Q
S aaa b2 c
D
E
E3
A
A1
A2 b b1
Table 8. HiP247 package mechanical data
Min.
3.00
0.40
19.85
15.45
1.45
4.85
2.20
1.90
1.00
2.00
5.30
14.20
3.70
18.30
3.55
5.65
5.30
mm
Typ.
5.00
2.00
20.00
15.60
5.45
18.50
5.50
0.04
SCTW40N120G2VAG
HiP247 package information
Max.
5.60
14.80
4.30
18.70
3.65
5.95
5.70
0.10
3.40
0.80
20.15
15.75
1.65
5.15
2.60
2.10
1.40
2.40
page 9/12
SCTW40N120G2VAG
Revision history
Date
09-Apr-2019
21-Jul-2020
12-Nov-2020
06-Sep-2021
23-Nov-2021
Revision
1
2
3
4
5
Table 9. Document revision history
Changes
First release.
Updated Table 3. On/off states and Table 7. Reverse SiC diode characteristics .
Updated Section 3 Package information .
Updated Section 2.1 Electrical characteristics (curves) .
Minor text changes.
Modified Table 5. Switching energy (inductive load) .
Updated Section 3.1 HiP247 package information.
Modified Table 1. Absolute maximum ratings
.
Modified Figure 1. Safe operating area and Figure 2. Maximum transient thermal impedance .
DS12970 - Rev 5 page 10/12
SCTW40N120G2VAG
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS12970 - Rev 5 page 11/12
SCTW40N120G2VAG
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DS12970 - Rev 5 page 12/12
