SCTW40N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
G(1)
HiP247
D(2, TAB)
S(3)
1
2
3
AM01475v1_noZen
Features
Order code
SCTW40N120G2V
V
DS
1200 V
R
DS(on) max.
100 mΩ
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance
• Very high operating junction temperature capability (T
J
= 200 °C)
Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control
I
D
36 A
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2 nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link
SCTW40N120G2V
Product summary
Order code SCTW40N120G2V
Marking
Package
Packing
SCT40N120G2V
HiP247
Tube
DS13504 - Rev 2 - June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTW40N120G2V
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
V
V
I
DS
GS
D
Parameter
Drain-source voltage
Gate-source voltage
Gate-source voltage (recommended operational values)
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
I
DM
(1)
P
TOT
T stg
T
J
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Storage temperature range
Operating junction temperature range
1. Pulse width is limited by safe operating area.
Symbol
R thJC
R thJA
Table 2. Thermal data
Parameter
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient
Value
1200
-10 to 22
-5 to 18
36
27
108
278
-55 to 200
A
A
W
°C
°C
Unit
V
V
Value
0.63
40
Unit
°C/W
°C/W
DS13504 - Rev 2 page 2/12
2
SCTW40N120G2V
Electrical characteristics
Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 3. On/off states
Parameter Test conditions
Drain-source breakdown voltage V
GS
= 0 V, I
D
= 1 mA
Zero gate voltage drain current V
GS
= 0 V, V
DS
= 1200 V
Gate-body leakage current
Gate threshold voltage
V
DS
= 0 V, V
GS
= -10 to 22 V
V
DS
= V
GS
, I
D
= 1 mA
V
GS
= 18 V, I
D
= 20 A
Static drain-source on-resistance
V
GS
= 18 V, I
D
= 20 A, T
J
= 200 °C
Symbol
E on
E off
Parameter
Turn-on switching energy
Turn-off switching energy
Table 5. Switching energy (inductive load)
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 V to 18 V
Min.
Typ.
Max.
Unit
1200 V
1.90
2.45
62
10 µA
±100 nA
4.90
100
V mΩ
137
Symbol
C iss
C oss
C rss
R
G
Q g
Q gs
Q gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
Table 4. Dynamic
DS
Test conditions
= 800 V, f = 1 MHz, V f = 1 MHz, I
D
= 0 A
GS
= 0 V
V
DD
= 800 V, V
GS
= -5 to 18 V, I
D
= 20 A
-
-
-
Min.
Typ.
Max.
Unit
1233 pF
56 pF
-
-
15
1
61
13
25
-
-
-
-
nC nC pF
Ω nC
Min.
Typ.
Max.
Unit
243 µJ
48 µJ
Symbol t d(on) t f t d(off) t r
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V
DD
= 800 V, I
D
= 20 A,
R
G
= 4.7 Ω, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
-
13.4
10.3
-
ns ns
-
22
7.9
-
ns ns
DS13504 - Rev 2 page 3/12
SCTW40N120G2V
Electrical characteristics
Symbol
V
SD t rr
Q rr
I
RRM
Parameter
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Table 7. Reverse SiC diode characteristics
Test conditions
I
SD
= 20 A, V
GS
= 0 V
I
SD
= 20 A, di/dt = 2000 A/μs,
V
DD
= 800 V, V
GS
= -5 to 18 V
Min.
Typ.
Max.
Unit
3.3
V
15 ns
-
77
9 -
nC
A
DS13504 - Rev 2 page 4/12
SCTW40N120G2V
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
I
D
(A)
Figure 1. Safe operating area
GADG021020200809SOA
I
DM
10 2
10 1
area
this
DS(on)
by R
R
DS(on)
max.
10 0
10 -1
10 -1 10 0
T
J
= 200 °C
T
C
= 25 °C
Single pulse
10 1 10 2 10 3 t p
=1µs t p
=10µs t p
=100µs t p
=1ms t p
=10ms
V
(BR)DSS
V
DS
(V)
Figure 3. Typical output characteristics (T
J
= 25°C)
I
D
(A)
70
V
GS
= 16, 18, 20 V
GADG021020200810OCH25
14 V
60
12 V
50
40
30
10 V
20
10
0
0 2 4 6 8
8 V
V
6 V
DS
(V)
Figure 2. Maximum transient thermal impedance
Z thJC
(°C/W) duty=0.5
0.4
0.3
0.2
GADG021020200810ZTH
10 -1
0.1
0.05
10 -2
R thJC
= 0.63 °C/W duty = t on
/ T
Single pulse t on
T
10 -3
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t p
(s)
Figure 4. Typical output characteristics (T
J
= 200 °C)
I
D
(A)
GADG021020200811OCH200
V
GS
= 14, 16, 18, 20 V
50
12V
10V
40
30
8V
20
10
0
0 2 4 6 8
6V
10 V
DS
(V)
Figure 5. Typical transfer characteristics
I
D
(A)
70
60
50
40
30
20
10
0
0
V
DS
= 8 V
4 8
GADG021020200811TCH
T
J
= 25 °C
12
T
J
= 200 °C
16 V
GS
(V)
P
TOT
(W)
250
Figure 6. Total power dissipation
GADG021020200812PDT
T
J
= 200 °C
200
150
100
50
0
-75 -25 25 75 125 175 T
C
(°C)
DS13504 - Rev 2 page 5/12
SCTW40N120G2V
Electrical characteristics (curves)
Figure 7. Typical gate charge characteristics
V
GS
(V)
GADG260420211149QVG
15
I
V
DD
D
= 800 V
= 20 A
10
Figure 9.
E
(μJ)
V
DD
= 800 V, R
G
= 4.7 Ω,
V
GS
= -5 to 18 V,
600
GADG021020200815SLD
E tot
400
200
0
0
5
0
-5
0 10 20 30 40 50 60 Q g
(nC)
Typical switching energy vs drain current
10 20
E on
30
E off
I
D
(A)
Figure 8. Typical capacitance characteristics
C
(pF)
GADG021020200813CVR
10 3
C iss
10 2
C rss f = 1 MHz C oss
10 1
10 -1 10 0 10 1 10 2 10 3
V
DS
(V)
Figure 10. Typical switching energy vs junction temperature
E
(μJ)
GADG021020200816SLT
V
DD
= 800 V, V
GS
= -5 to 18 V,
E tot
R
G
= 4.7 Ω, I
D
= 20 A,
400
E on
300
200
100
0
25 75 125
E off
175 T
J
(°C)
Figure 11. Normalized breakdown voltage vs temperature
V
(BR)DSS
(norm.)
1.06
I
D
= 1 mA
GADG021020200834BDV
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 175 T
J
(°C)
Figure 12. Normalized gate threshold vs temperature
V
GS(th)
(norm.)
GADG021020200836VTH
1.2
I
D
= 1mA
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175 T
J
(°C)
DS13504 - Rev 2 page 6/12
SCTW40N120G2V
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
R
DS(on)
(norm.)
2.2
GADG021020200836RON
2.0
1.8
1.6
1.4
1.2
1.0
0.8
-75 -25
V
GS
= 18 V
25 75 125 175 T
J
(°C)
Figure 14. Typical reverse conduction characteristics
(T
J
= 25 °C)
I
D
(A)
-10
GADG021020200840RCC25
-20
-30
V
GS
= -10 V
-40
-50
-60
-70
-80
-8 -6 -4
V
GS
= 10 V
V
GS
= 0 V
-2 V
DS
(V)
Figure 15. Typical reverse conduction characteristics
(T
J
= 200 °C)
I
D
(A)
-10
V
GS
= -10 V
GADG021020200843RCC200
-20
-30
V
GS
= 0 V
-40
-50
-60
-70
-80
-8 -6
V
GS
= 10 V
-4 -2 V
DS
(V)
Figure 16. Typical switching energy vs gate resistance
E
(μJ)
700
600
500
V
DD
= 800 V
I
D
V
GS
= 20 A
= -5 to 18 V
GADG0306202108000SLG
E tot
E on
400
300
200
100
0
0 4 8 12 16
E off
20 R
G
(Ω)
DS13504 - Rev 2 page 7/12
3
3.1
SCTW40N120G2V
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com
. ECOPACK is an ST trademark.
HiP247 package information
Figure 17. HiP247 package outline
DS13504 - Rev 2
8581091_4 page 8/12
DS13504 - Rev 2
Dim.
e
L
L1
L2
P
Q
S aaa b2 c
D
E
E3
A
A1
A2 b b1
Table 8. HiP247 package mechanical data
Min.
3.00
0.40
19.85
15.45
1.45
4.85
2.20
1.90
1.00
2.00
5.30
14.20
3.70
18.30
3.55
5.65
5.30
mm
Typ.
5.00
2.00
20.00
15.60
5.45
18.50
5.50
0.04
SCTW40N120G2V
HiP247 package information
Max.
5.60
14.80
4.30
18.70
3.65
5.95
5.70
0.10
3.40
0.80
20.15
15.75
1.65
5.15
2.60
2.10
1.40
2.40
page 9/12
SCTW40N120G2V
Revision history
Date
08-Oct-2020
09-Jun-2021
Version
1
2
Table 9. Document revision history
Changes
First release.
Modified title, R
DS(on)
value, applications and description on cover page.
Modified Table 2. Thermal data
and Table 3. On/off states
.
Modified Section 2.1 Electrical characteristics (curves) .
Minor text changes.
DS13504 - Rev 2 page 10/12
SCTW40N120G2V
Contents
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1
HiP247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13504 - Rev 2 page 11/12
SCTW40N120G2V
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DS13504 - Rev 2 page 12/12
