SCTWA70N120G2V-4
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package
Features
1
2
4
3
Order code
VDS
RDS(on) max.
ID
SCTWA70N120G2V-4
1200 V
30 mΩ
91 A
•
•
•
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
•
Source sensing pin for increased efficiency
HiP247-4
Applications
Drain(1, TAB)
•
•
•
Gate(4)
Switching mode power supply
DC-DC converters
Industrial motor control
Description
Driver
source(3)
Power
source(2)
ND1TPS2DS3G4
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
SCTWA70N120G2V-4
Product summary
Order code
SCTWA70N120G2V-4
Marking
SCT70N120G2V
Package
HiP247-4
Packing
Tube
DS13730 - Rev 1 - June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTWA70N120G2V-4
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VDS
VGS
Parameter
Value
Unit
Drain-source voltage
1200
V
Gate-source voltage
-10 to 22
Gate-source voltage (recommended operating values)
-5 to 18
V
Drain current (continuous) at TC = 25 °C
91
Drain current (continuous) at TC = 100 °C
69
IDM(1)
Drain current (pulsed)
274
A
PTOT
Total power dissipation at TC = 25 °C
547
W
Tstg
Storage temperature range
-55 to 200
°C
Value
Unit
0.32
°C/W
40
°C/W
ID
TJ
Operating junction temperature range
A
1. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
DS13730 - Rev 1
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
page 2/12
SCTWA70N120G2V-4
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero-gate voltage drain current
VDS = 1200 V, VGS = 0 V
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
RDS(on)
Static drain-source on-resistance
Min.
Typ.
Max.
1200
Unit
V
10
µA
±100
nA
2.45
4.90
V
VGS = 18 V, ID = 50 A
21
30
VGS = 18 V, ID = 50 A, TJ = 200 °C
46
1.9
mΩ
Table 4. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
RG
Intrinsic gate resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 800 V, f = 1 MHz, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 800 V, ID = 50 A, VGS = -5 to 18 V
Min.
Typ.
Max.
Unit
-
3540
-
pF
-
176
-
pF
-
28
-
pF
-
1
-
Ω
-
150
-
nC
-
28
-
nC
-
63
-
nC
Min.
Typ.
Max.
Unit
Table 5. Switching energy
Symbol
Parameter
Test conditions
Eon
Turn-on switching energy
VDD = 800 V, ID = 50 A
-
932
-
µJ
Eoff
Turn-off switching energy
RG= 3.3 Ω, VGS = -5 to 18 V
-
226
-
µJ
Min.
Typ.
Max.
Unit
-
15.5
-
ns
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS13730 - Rev 1
Parameter
Test conditions
Turn-on delay time
Rise time
VDD = 800 V, ID = 50 A
-
9
-
ns
Turn-off delay time
RG= 3.3 Ω, VGS = -5 to 18 V
-
36
-
ns
-
18
-
ns
Fall time
page 3/12
SCTWA70N120G2V-4
Electrical characteristics
Table 7. Reverse SiC diode characteristics
Symbol
VSD
DS13730 - Rev 1
Parameter
Forward on voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Test conditions
ISD = 50 A, VGS = 0 V
ISD = 50 A, VDD = 800 V,
VGS = -5 to 18 V
Min.
Typ.
Max.
Unit
-
2.7
-
V
-
11.16
-
ns
-
276
-
nC
-
40
-
A
page 4/12
SCTWA70N120G2V-4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2. Maximum transient thermal impedance
Figure 1. Safe operating area
ID
(A)
10 1
tp =1µs
tp =100µs
RDS(on) max.
tp =1ms
10
10
1
10
10
2
VDS (V)
3
0.05
10-2
RthJC = 0.32 °C/W
duty = ton / T
Single pulse
VGS =14V
VGS =16, 18, 20V
10-3
10-6
ton
T
10-5
10-4
10-3
10-2
tp (s)
Figure 4. Typical output characteristics (TJ = 200 °C)
IC
(A)
GADG210420201032OC25
150
0.2
0.1
V(BR)DSS
Figure 3. Typical output characteristics (TJ = 25 °C)
IC
(A)
0.3
tp =10ms
TJ = 200 °C
TC = 25 °C
Single pulse
0
10-1
tp =10µs
10 0
10 -1
10 -1
GADG210420201030ZTH
duty=0.5 0.4
O
is per
lim ati
ite on
d in
by th
R is a
DS
(o rea
n)
10 2
ZthJC
(°C/W)
GADG210420201030SOA
IDM
GADG210420201032OC200
VGS =14,16,18, 20V
100
VGS =12V
VGS =10V
VGS =12V
80
120
90
VGS =10V
60
40
60
VGS =6V
VGS =8V
30
0
0
VGS =6V
1
2
3
4
5
6
VCE (V)
20
0
0
Figure 5. Typical transfer characteristics
ID
(A)
GADG210420201033TCH
150
PTOT
(W)
3
4
TJ = 200 °C
VDS = 5 V
100
8
12
6
VCE (V)
16
VGS (V)
TJ ≤ 200 °C
300
30
4
5
GADG210420201035PDT
400
200
DS13730 - Rev 1
2
Figure 6. Total power dissipation
60
0
0
1
500
TJ = 25 °C
120
90
VGS =8V
0
0
50
100
150
TC (°C)
page 5/12
SCTWA70N120G2V-4
Electrical characteristics (curves)
Figure 7. Typical gate charge characteristics
VGS
(V)
15
GADG250520211644QVG
Figure 8. Typical capacitance characteristics
C
(pF)
GADG210420201036CVR
CISS
VDD = 800 V,
ID = 50 A
10 3
10
5
COSS
10
0
2
f = 1 MHz
CRSS
-5
-10
0
40
80
120
Qg (nC)
Figure 9. Typical switching energy vs drain current
E
(μJ)
2500
2000
GADG250520211651SLD
VDD = 800 V,
Etot
RG = 3.3 Ω,
VGS = -5 to 18 V
VDS (V)
10 2
Figure 10. Typical switching energy vs temperature
E
GADG200520211602MT
(µJ) V = 800 V, R = 3.3 Ω,
DD
G
VGS = -5 to 18 V, ID = 50 A
Etot
1200
Eon
600
Eoff
500
Eoff
300
20
40
60
80
100
ID (A)
Figure 11. Normalized breakdown voltage vs temperature
V(BR)DSS
(norm.)
GADG210420201038BDV
1.06
0
-25
25
75
125
175
TJ [C]
Figure 12. Normalized gate threshold vs temperature
VGS(th)
(norm.)
GADG210420201039VTH
1.4
1.04
1.2
ID = 1 mA
1.02
1.0
1.00
0.8
0.98
0.6
DS13730 - Rev 1
10 1
900
1000
0.96
-75
10 0
Eon
1500
0
0
10 1
10 -1
-25
25
75
125
175
TJ (°C)
0.4
-75
ID = 1mA
-25
25
75
125
175
TJ (°C)
page 6/12
SCTWA70N120G2V-4
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
RDS(on)
(norm.)
GADG210420201039RON
2.5
VGS = 10 V
-90
-120
0.5
VGS = 0 V
-150
-25
25
75
125
175
TJ (°C)
Figure 15. Typical reverse conduction characteristics
(TJ = 200 °C)
ID
(A)
GADG210420201043RCC200
-180
-7
VGS = 0 V
-6
-5
-4
-3
-2
E
(μJ)
VDS (V)
2500
GADG250520211653SLG
VDD = 800 V,
ID = 50 A
VGS = -5 to 18 V
Etot
Eon
2000
-90
-1
Figure 16. Typical switching energy vs gate resistance
3000
VGS = -10 V
-60
1500
-120
1000
-150
DS13730 - Rev 1
VGS = -10 V
-60
1.0
-180
-7
GADG210420201043RCC25
VGS = 18 V
1.5
-30
ID
(A)
-30
2.0
0.0
-75
Figure 14. Typical reverse conduction characteristics
(TJ = 25 °C)
500
VGS = 10 V
-6
-5
-4
-3
Eoff
-2
-1
VDS (V)
0
0
3
6
9
12
15
RG (Ω)
page 7/12
SCTWA70N120G2V-4
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
3.1
HiP247-4 package information
Figure 17. HiP247-4 package outline
8405626_Rev_3
DS13730 - Rev 1
page 8/12
SCTWA70N120G2V-4
HiP247-4 package information
Table 8. HiP247-4 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
b1
1.15
b2
0
0.20
c
0.59
0.66
c1
0.58
0.60
0.62
D
20.90
21.00
21.10
D1
16.25
16.55
16.85
D2
1.05
1.20
1.35
D3
24.97
25.12
25.27
E
15.70
15.80
15.90
E1
13.10
13.30
13.50
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
2.44
2.54
2.64
e1
4.98
5.08
5.18
L
19.80
19.92
20.10
P
3.50
3.60
3.70
1.29
1.20
P1
7.40
P2
2.40
Q
5.60
S
2.50
2.60
6.00
6.15
T
9.80
10.20
U
6.00
6.40
aaa
DS13730 - Rev 1
1.25
0.04
0.10
page 9/12
SCTWA70N120G2V-4
Revision history
Table 9. Document revision history
DS13730 - Rev 1
Date
Revision
01-Jun-2021
1
Changes
First release.
page 10/12
SCTWA70N120G2V-4
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
3
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
HiP247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13730 - Rev 1
page 11/12
SCTWA70N120G2V-4
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© 2021 STMicroelectronics – All rights reserved
DS13730 - Rev 1
page 12/12
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