STMicroelectronics SCTWA60N120G2-4 Datasheet

SCTWA60N120G2-4
Datasheet
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A
in an HiP247-4 package
Features
1
2
4
3
Order code
VDS
RDS(on) max.
ID
SCTWA60N120G2-4
1200 V
52 mΩ
60 A
•
•
•
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
•
Source sensing pin for increased efficiency
HiP247-4
Applications
Drain(1, TAB)
•
•
•
Gate(4)
Switching mode power supply
DC-DC converters
Industrial motor control
Description
Driver
source(3)
Power
source(2)
ND1TPS2DS3G4
This silicon carbide Power MOSFET device has been developed using ST’s
advanced and innovative 2nd generation SiC MOSFET technology. The device
features remarkably low on-resistance per unit area and very good switching
performance. The variation of switching loss is almost independent of junction
temperature.
Product status link
SCTWA60N120G2-4
Product summary
Order code
SCTWA60N120G2-4
Marking
SCT60N120G2
Package
HiP247-4
Packing
Tube
DS13620 - Rev 3 - June 2021
For further information contact your local STMicroelectronics sales office.
www.st.com
SCTWA60N120G2-4
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
VDS
VGS
Parameter
Value
Unit
Drain-source voltage
1200
V
Gate-source voltage
-10 to 22
Gate-source voltage (recommended operational values)
-5 to 18
V
Drain current (continuous) at TC = 25 °C
60
Drain current (continuous) at TC = 100 °C
45
IDM(1)
Drain current (pulsed)
177
A
PTOT
Total power dissipation at TC = 25 °C
389
W
Tstg
Storage temperature range
ID
TJ
Operating junction temperature range
-55 to 200
A
°C
°C
1. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
DS13620 - Rev 3
Parameter
RthJC
Thermal resistance, junction-to-case
RthJA
Thermal resistance, junction-to-ambient
Value
Unit
0.45
°C/W
40
°C/W
page 2/12
SCTWA60N120G2-4
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 3. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 1200 V
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 22 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 1 mA
RDS(on)
Static drain-source on-resistance
Min.
Typ.
Max.
1200
Unit
V
10
µA
±100
nA
3.0
5.0
V
VGS = 18 V, ID = 30 A
35
52
VGS = 18 V, ID = 30 A, TJ = 200 °C
73
1.9
mΩ
Table 4. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Rg
Gate input resistance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Test conditions
VDS = 800 V, f = 1 MHz, VGS = 0 V
f = 1 MHz, ID = 0 A
VDS = 800 V, VGS = -5 to 18 V, ID = 30 A
Min.
Typ.
Max.
Unit
-
1969
-
pF
-
113
-
pF
-
20
-
pF
-
1
-
Ω
-
94
-
nC
-
22
-
nC
-
36
-
nC
Min.
Typ.
Max.
Unit
Table 5. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Eon
Turn-on switching energy
VDD = 800 V, ID = 40 A
-
617
-
µJ
Eoff
Turn-off switching energy
RG = 4.7 Ω, VGS = -5 V to 18 V
-
188
-
µJ
Min.
Typ.
Max.
Unit
-
16
-
ns
Table 6. Switching times
Symbol
td(on)
tr
td(off)
tf
DS13620 - Rev 3
Parameter
Test conditions
Turn-on delay time
Rise time
VDD = 800 V, ID = 30 A,
-
15
-
ns
Turn-off delay time
RG = 4.7 Ω, VGS = -5 to 18 V
-
32
-
ns
-
14
-
ns
Fall time
page 3/12
SCTWA60N120G2-4
Electrical characteristics
Table 7. Reverse SiC diode characteristics
Symbol
DS13620 - Rev 3
Parameter
VSD
Diode forward voltage
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Test conditions
ISD = 30 A, VGS = 0 V
ISD = 30 A, VGS = 0 V,
di/dt = 2000 A/μs, VDD = 800 V
Min.
Typ.
Max.
Unit
-
3
-
V
-
17
-
ns
-
102
-
nC
-
10
-
A
page 4/12
SCTWA60N120G2-4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 2. Maximum transient thermal impedance
Figure 1. Safe operating area
ID
(A)
ZthJC
(°C/W)
GADG150220210832SOA
IDM
GADG110520200954ZTH
duty=0.5
n)
tp =1µs
DS
(o
O
is per
lim ati
ite on
d in
by th
R is a
re
a
10 2
10 1
tp =10µs
10 -1 0.2
0.1
0.05
tp =100µs
RDS(on) max.
10
10 -2
TJ = 200 °C
TC = 25 °C
Single pulse
10 -1
10 -1
10
10
0
tp =10ms
V(BR)DSS
10
1
10
2
VDS (V)
3
Figure 3. Typical output characteristics (TJ = 25 °C)
ID
(A) VGS =14,16,18, 20V
30
12 V
Single pulse
10 -3
10 -6
T
10
10
-5
-4
10
10
-3
10 -1
-2
tp (s)
GADG150220210834OC200
ID
(A) VGS =12,14,16,18, 20 V
10 V
30
GADG150220210833OC25
10 V
25
20
20
15
ton
Figure 4. Typical output characteristics (TJ = 200 °C)
25
8V
10
8V
15
6V
10
5
5
6V
1
2
3
4
5
6
7
VDS (V)
0
0
Figure 5. Typical transfer characteristics
ID
(A)
30
RthJC = 0.45 °C/W
duty = ton / T
tp =1ms
0
0
0
0.4 0.3
GADG150220210834TCH
VDS = 8 V
1
2
3
4
5
6
7
4V
VDS (V)
Figure 6. Total power dissipation
PTOT
(W)
GADG110520201607PDT
400
25
300
20
TJ = 200 °C
15
TJ ≤ 200 °C
TJ = 25 °C
200
10
100
5
0
0
DS13620 - Rev 3
2
4
6
8
10
VGS (V)
0
0
50
100
150
200
TC (°C)
page 5/12
SCTWA60N120G2-4
Electrical characteristics (curves)
Figure 7. Typical gate charge characteristics
VGS
(V)
GADG150220210851QVG
Figure 8. Typical capacitance characteristics
C
(pF)
GADG150220210849CVR
VDD = 800 V
ID = 30 A
15
Ciss
10 3
10
5
Coss
10 2
f = 1 MHz
0
Crss
-5
0
10
10 -1
1
20
40
60
80
Qg (nC)
Figure 9. Typical switching energy vs drain current
E
(µJ) VDD = 800 V
VGS = -5 to 18 V
1200 RG = 4.7 Ω
GADG150220210853SLD
Etot
10 0
10 1
Figure 10. Typical switching energy vs temperature
GADG150220210854SLT
E
(µJ) VDD = 800 V, ID = 30 A,
VGS = -5 to 18 V, RG = 4.7 Ω
Etot
800
1000
Eon
800
400
Eoff
400
200
200
0
0
Eon
600
600
VDS (V)
10 2
10
20
30
40
50
60
ID (A)
Figure 11. Typical switching energy vs gate resistance
E
(µJ) ID = 30 A
VDD = 800 V
VGS = -5 to 18 V
800
GADG150220210856SLG
600
0
0
Eoff
50
100
150
200
TJ (°C)
Figure 12. Normalized gate threshold vs temperature
VGS(th)
(norm.)
Etot
1.4
Eon
1.2
GADG110520201009VTH
ID = 1mA
1.0
400
0.8
Eoff
200
0
0
DS13620 - Rev 3
0.6
2
4
6
8
10
RG (Ω)
0.4
-75
-25
25
75
125
175
TJ (°C)
page 6/12
SCTWA60N120G2-4
Electrical characteristics (curves)
Figure 13. Normalized on-resistance vs temperature
RDS(on)
(norm.)
GADG150220210841RON
2.5
Figure 14. Normalized breakdown voltage vs temperature
V(BR)DSS
(norm.)
1.06
VGS = 18 V
2.0
1.04
1.5
1.02
1.0
1.00
0.5
0.98
0.0
-75
-25
25
75
125
175
TJ (°C)
Figure 15. Typical reverse conduction characteristics
(TJ = 25 °C)
GADG150220210846RCC25
ID
(A)
-5
-10
-25
25
75
125
175
TJ (°C)
Figure 16. Typical reverse conduction characteristics
(TJ = 200 °C)
GADG150220210848RCC200
ID
(A)
-5
VGS = -5 V
-10
-15
-20
-20
-25
VGS = 18 V
-4
-3
-2
VGS = -5 V
VGS = 0 V
-25
VGS = 0 V
-30
DS13620 - Rev 3
ID = 1 mA
0.96
-75
-15
-35
-5
GADG110520201723BDV
-1
VDS(V)
VGS = 18 V
-30
-35
-5
-4
-3
-2
-1
VDS(V)
page 7/12
SCTWA60N120G2-4
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
3.1
HiP247-4 package information
Figure 17. HiP247-4 package outline
8405626_Rev_3
DS13620 - Rev 3
page 8/12
SCTWA60N120G2-4
HiP247-4 package information
Table 8. HiP247-4 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
b1
1.15
b2
0
0.20
c
0.59
0.66
c1
0.58
0.60
0.62
D
20.90
21.00
21.10
D1
16.25
16.55
16.85
D2
1.05
1.20
1.35
D3
24.97
25.12
25.27
E
15.70
15.80
15.90
E1
13.10
13.30
13.50
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
2.44
2.54
2.64
e1
4.98
5.08
5.18
L
19.80
19.92
20.10
P
3.50
3.60
3.70
1.29
1.20
P1
7.40
P2
2.40
Q
5.60
S
2.50
2.60
6.00
6.15
T
9.80
10.20
U
6.00
6.40
aaa
DS13620 - Rev 3
1.25
0.04
0.10
page 9/12
SCTWA60N120G2-4
Revision history
Table 9. Document revision history
Date
Revision
19-Feb-2021
1
24-May-2021
2
16-Jun-2021
3
Changes
First release.
Modified Table 3. On/off states.
Minor text changes.
Modified Table 1. Absolute maximum ratings.
DS13620 - Rev 3
Modified Figure 15. Typical reverse conduction characteristics (TJ = 25 °C) and
Figure 16. Typical reverse conduction characteristics (TJ = 200 °C).
page 10/12
SCTWA60N120G2-4
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
3
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
HiP247-4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
DS13620 - Rev 3
page 11/12
SCTWA60N120G2-4
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DS13620 - Rev 3
page 12/12
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