STGW15S120DF3,
STGWA15S120DF3
Trench gate field-stop IGBT, S series
1200 V, 15 A low drop
Datasheet - production data
Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 15 A
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode
72
72ORQJOHDGV
Applications
• Industrial drives
Figure 1. Internal schematic diagram
& RU7$%
• UPS
• Solar
• Welding
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the S series of
1200 V IGBTs which is tailored to maximize
efficiency of low frequency industrial systems.
Furthermore, a positive VCE(sat) temperature
coefficient and tight parameter distribution result
in safer paralleling operation.
* ( Table 1. Device summary
Order code
Marking
Package
Packing
STGW15S120DF3
G15S120DF3
TO-247
Tube
STGWA15S120DF3
G15S120DF3
TO-247 long leads
Tube
December 2014
This is information on a product in full production.
DocID026371 Rev 2
1/18
www.st.com
Contents
STGW15S120DF3, STGWA15S120DF3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Test circuits
5
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6
2/18
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1
TO-247, STGW15S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.2
TO-247 long leads, STGWA15S120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
DocID026371 Rev 2
STGW15S120DF3, STGWA15S120DF3
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VCES
Parameter
Collector-emitter voltage (VGE = 0)
Value
Unit
1200
V
IC
Continuous collector current at TC = 25 °C
30
A
IC
Continuous collector current at TC = 100 °C
15
A
ICP(1)
Pulsed collector current
60
A
VGE
Gate-emitter voltage
±20
V
IF
Continuous forward current at TC = 25 °C
30
A
IF
Continuous forward current at TC = 100 °C
15
A
IFP(1)
Pulsed forward current
60
A
PTOT
Total dissipation at TC = 25 °C
259
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature
- 55 to 175
°C
Value
Unit
TJ
1. Pulse width limited by maximum junction temperature.
Table 3. Thermal data
Symbol
Parameter
RthJC
Thermal resistance junction-case IGBT
0.58
°C/W
RthJC
Thermal resistance junction-case diode
1.3
°C/W
RthJA
Thermal resistance junction-ambient
50
°C/W
DocID026371 Rev 2
3/18
18
Electrical characteristics
2
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics
TJ = 25 °C unless otherwise specified
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Collector-emitter
V(BR)CES breakdown voltage
(VGE = 0)
IC = 2 mA
Min.
VF
Unit
V
1.55
V = 15 V, IC = 15 A,
Collector-emitter saturation T GE
J = 125 °C
voltage
VGE = 15 V, IC = 15 A
TJ = 175 °C
Forward on-voltage
Max.
1200
VGE = 15 V, IC = 15 A
VCE(sat)
Typ.
2.05
1.75
V
1.85
IF = 15 A
2.7
IF = 15 A TJ = 125 °C
2.05
V
IF = 15 A TJ = 175 °C
1.75
V
VGE(th)
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
(VGE = 0)
IGES
Gate-emitter leakage
current (VCE = 0)
5
6
3.8
V
7
V
VCE = 1200 V
25
µA
VGE = ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
4/18
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Qg
Total gate charge
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0
VCC = 960 V, IC =15 A,
VGE = 15 V, see Figure 30
Qge
Gate-emitter charge
Qgc
Gate-collector charge
DocID026371 Rev 2
Min.
Typ.
Max.
Unit
-
981
-
pF
-
82
-
pF
-
37
-
pF
-
53
-
nC
-
7.8
-
nC
-
28.2
-
nC
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics
Table 6. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Min.
Typ.
Max.
Unit
Turn-on delay time
-
23
-
ns
Current rise time
-
10
-
ns
-
1200
-
A/µs
-
140
-
ns
-
282
-
ns
Turn-on current slope
VCE = 600 V, IC = 15 A,
VGE = 15 V, RG= 22 Ω
see Figure 29
Turn-off delay time
Current fall time
Turn-on switching losses
-
0.54
-
mJ
(2)
Turn-off switching losses
-
1.375
-
mJ
Total switching losses
-
1.912
-
mJ
Turn-on delay time
-
22
-
ns
Current rise time
-
9.2
-
ns
Turn-on current slope
-
983
-
A/µs
-
146
-
ns
-
438
-
ns
Ets
td(on)
tr
(di/dt)on
td(off)
tf
VCE = 600 V, IC = 15 A,
RG= 22 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 29
Turn-off delay time
Current fall time
(1)
Turn-on switching losses
-
0.923
-
mJ
(2)
Turn-off switching losses
-
1.85
-
mJ
Ets
Total switching losses
-
2.772
-
mJ
tsc
Short-circuit withstand time
-
µs
Eon
Eoff
1.
Test conditions
(1)
Eon
Eoff
Parameter
VCC ≤ 600 V, VGE= 15 V,
TJstart ≤ 150 °C, VP < 1200 V
10
Energy losses include reverse recovery of the diode.
2. Turn-off losses also include the tail of the collector current.
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
270
-
ns
-
960
-
nC
-
15
-
A
-
935
-
A/µs
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dlrr/ /dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
-
0.18
-
mJ
trr
Reverse recovery time
-
534
-
ns
Qrr
Reverse recovery charge
-
3456
-
nC
Irrm
Reverse recovery current
-
23
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-
266
-
A/µs
Err
Reverse recovery energy
-
0.55
-
mJ
IF = 15 A, VR = 600 V,
VGE = 15 V, see Figure 29
di/dt = 1000 A/µs
IF = 15 A, VR = 600 V,
VGE = 15 V, TJ = 175 °C,
see Figure 29
di/dt = 1000 A/µs
DocID026371 Rev 2
5/18
18
Electrical characteristics curves
3
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics curves
Figure 2. Power dissipation vs. case
temperature
Figure 3. Collector current vs. case temperature
*,3*/0
3727
:
*,3*/0
,& $
9*(97 -&
9*(97 -&
7& &
Figure 4. Output characteristics (TJ = 25 °C)
Figure 5. Output characteristics (TJ = 175 °C)
*,3*/0
,& $
*,3*/0
,& $
9*( 9
9
7& &
9*( 9
9
9
9
9
9
9
9&( 9
Figure 6. VCE(sat) vs. junction temperature
*,3*/0
9&( VDW
9
9
9&( 9
Figure 7. VCE(sat) vs. collector current
9&( VDW
9
,& $
9*( 9
*,3*/0
9*( 9
7- &
7- &
,& $
7- &
,& $
6/18
7- &
DocID026371 Rev 2
,& $
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics curves
Figure 8. Collector current vs. switching
frequency
*,3*/0
,& $
7& &
Figure 9. Forward bias safe operating area
*,3*/0
,&
$
V
7& &
V
V
5HFWDQJXODUFXUUHQWVKDSH
GXW\F\FOH 9&& 9
5* ȍ9*( 97- &
7F &
I N+]
Figure 10. Transfer characteristics
9&( 9
Figure 11. Diode VF vs. forward current
*,3*/0
,& $
PV
6LQJOHSXOVH
*,3*/0
9) 9
9&( 9
7- &
7- &
9*( 9
Figure 12. Normalized VGE(th) vs. junction
temperature
*,3*/0
9*( 7+
7- &
7- &
QRUP
,) $
Figure 13. Normalized VBR(CES) vs. junction
temperature
*,3*/0
9 %5 &(6
QRUP
,& P$
,& $9&( 9*(
7- &
7- &
DocID026371 Rev 2
7- &
7/18
18
Electrical characteristics curves
STGW15S120DF3, STGWA15S120DF3
Figure 14. Capacitance variations
Figure 15. Gate charge vs. gate-emitter voltage
*,3*/0
&
S)
9*(
9
9&& 9 ,& $, * P$
I 0+]
*,3*/0
&LHV
&RHV
&UHV
*,3*/0
5* ȍ9&&
9&( 9
Figure 16. Switching loss vs. collector current
(
P
&
97- 9
9*( 4J Q&
Figure 17. Switching loss vs. gate resistance
(
P
*,3*/0
,& $9&&
&
97- 9
9*( (RII
(RII
(RQ
(RQ
,& $
Figure 18. Switching loss vs. temperature
(
P
*,3*/0
,& $9&&
ȍ
95* 9*( 9
5* ȍ
Figure 19. Switching loss vs. collector emitter
voltage
(
P-
*,3*/0
,& $9*(
ȍ
9 5* 7M &
(RII
8/18
(RII
(RQ
(RQ
7- &
DocID026371 Rev 2
9&( 9
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics curves
Figure 20. Short-circuit time and current vs VGE Figure 21. Switching times vs. collector current
*,3*/0
W
QV
*,3*/0
W6&
V
,VF
$
WI
9&& 97- &
WG RII
,6&
W 6&
WG RQ
WU
9&& 99*( 95* ȍ7M &
9*(
Figure 22. Switching times vs. gate resistance
W
QV
9
*,3*/0
WI
,& $
Figure 23. Reverse recovery current vs. diode
current slope
,UUP
$
*,3*/0
WG RII
WG RQ
WU
9&& 99*( 9,F $
&
7- 5* ȍ
Figure 24. Reverse recovery time vs. diode
current slope
*,3*/0
WUU
QV
9&& 99*( 9,) &
$
7- GLGW $V
Figure 25. Reverse recovery charge vs. diode
current slope
*,3*/0
4UU
&
$
7- 9&& 99*( 9,) &
$
7- 9&& 99*( 9,) &
GLGW $V
DocID026371 Rev 2
GLGW $V
9/18
18
Electrical characteristics curves
STGW15S120DF3, STGWA15S120DF3
Figure 26. Reverse recovery energy vs. diode
current slope
*,3*/0
(UU
$
9&& 99*( 9,) &
7- P
10/18
GLGW $V
DocID026371 Rev 2
STGW15S120DF3, STGWA15S120DF3
Electrical characteristics curves
Figure 27. Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
0.05
-1
10
0.02
Zth=k Rthj-c
δ=tp/τ
0.01
Single pulse
tp
τ
-2
10 -5
10
-4
10
-2
-3
10
10
-1
10
tp (s)
Figure 28. Thermal impedance for diode
.
*&
į 6LQJOHSXOVH
DocID026371 Rev 2
WS V
11/18
18
Test circuits
4
STGW15S120DF3, STGWA15S120DF3
Test circuits
Figure 29. Test circuit for inductive load
switching
Figure 30. Gate charge test circuit
AM01504v1
Figure 31. Switching waveform
AM01505v1
Figure 32. Diode recovery time waveform
VG
IF
trr
90%
VCE
Qrr
di/dt
90%
10%
ts
tf
10%
Tr(Voff)
Tcross
10% IRRM
90%
t
IRRM
IC
10%
Td(off)
Td(on)
Tr(Ion)
Ton
VRRM
Tf
Toff
dv/dt
AM01506v1
12/18
DocID026371 Rev 2
AM01507v1
STGW15S120DF3, STGWA15S120DF3
5
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
5.1
TO-247, STGW15S120DF3
Figure 33. TO-247 outline
0075325_H
DocID026371 Rev 2
13/18
18
Package information
STGW15S120DF3, STGWA15S120DF3
Table 8. TO-247 mechanical data
mm
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
14/18
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID026371 Rev 2
5.70
STGW15S120DF3, STGWA15S120DF3
5.2
Package information
TO-247 long leads, STGWA15S120DF3
Figure 34. TO-247 long lead outline
8463846_A_F
DocID026371 Rev 2
15/18
18
Package information
STGW15S120DF3, STGWA15S120DF3
Table 9. TO-247 long leads mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.90
5.00
5.10
A1
2.31
2.41
2.51
A2
1.90
2.00
2.10
b
1.16
1.26
b2
3.25
b3
2.25
c
0.59
0.66
D
20.90
21.00
21.10
E
15.70
15.80
15.90
E2
4.90
5.00
5.10
E3
2.40
2.50
2.60
e
5.34
5.44
5.54
L
19.80
19.92
20.10
L1
16/18
4.30
P
3.50
Q
5.60
S
6.05
3.60
3.70
6.00
6.15
DocID026371 Rev 2
6.25
STGW15S120DF3, STGWA15S120DF3
6
Revision history
Revision history
Table 10. Document revision history
Date
Revision
Changes
16-May-2014
1
Initial release.
18-Dec-2014
2
Updated Section 1 and Section 2.
Inserted Section 3.
DocID026371 Rev 2
17/18
18
STGW15S120DF3, STGWA15S120DF3
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DocID026371 Rev 2
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