STC6NF30V
N-channel 30V - 0.020
Ω
- 6A - TSSOP8
2.5V-drive STripFET™ II Power MOSFET
General features
Type V
DSS
STC6NF30V 30V
R
DS(on)
< 0.025 Ω (@ 4.5 V)
< 0.030 Ω (@ 2.7 V)
I
D
6A
■
■
■
Ultra low threshold gate drive (2.5V)
Standard outline for easy automated surface mount assembly
Double dice in common drain configuration
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance.
Applications
■ Switching application
TSSOP8
Internal schematic diagram
Obsolete Product(s) - Obsolete Product(s)
Order code
Part number
STC6NF30V
Marking
C6NF30V
Package
TSSOP8
Packaging
Tape & reel
February 2007 Rev 4 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STC6NF30V
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Obsolete Product(s) - Obsolete Product(s)
2/13
STC6NF30V Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T stg
Drain-source voltage (V
GS
Drain-gate voltage (R
GS
Gate-source voltage
= 0)
= 20K Ω )
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
C
= 25°C
C
C
= 25°C
=100°C
T
J
Max. Operating Junction Temperature
1.
Pulse width limited by safe operating area
Table 2.
Thermal data
Symbol Parameter Value
R thJ-PBC
Thermal resistance junction-PBC Max 100
(1)
R thJ-PBC
Thermal resistance junction-PBC Max
1.
When Mounted on FR-4 board with 1 inch
2 pad, 2 oz. of Cu. and t = 10 sec.
2.
When Mounted on minimum recommended footprint
83.5
(2)
Value
30
20
± 12
6
3.8
24
1.5
–55 to 150
–55 to 150
Unit
A
W
A
A
V
V
V
°C
°C
Unit
°C/W
°C/W
Obsolete Product(s) - Obsolete Product(s)
3/13
Electrical characteristics STC6NF30V
(T
J
= 25°C unless otherwise specified)
Table 3.
Symbol
On/off states
Parameter
V
(BR)DSS
Drain-source breakdown voltage
V
I
I
DSS
GSS
GS(th)
Zero gate voltage drain current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
R
DS(on)
Static drain-source on resistance
Test conditions
I
D
= 250
µ
A, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
GS
= ±12V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 3A
V
GS
=2.5V, I
D
= 3A
Min.
Typ.
Max.
Unit
30
0.6
1
10
±100 nA
0.020
0.025
0.025
0.030
V
µA
µA
V
Ω
Ω
Table 4.
Symbol
Dynamic
Parameter Test conditions g fs
(1)
C iss
C oss
C rss
Forward transconductance V
DS
= 10V, I
D
= 6A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
V
DS
GS
=25V, f = 1 MHz,
= 0
Q g
Q gs
Q gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
V
GS
=15V, I
D
= 2.5V
= 6A
Figure 16 on page 9
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Min.
Typ.
Max.
Unit
18 S
800
180
32 pF pF pF
6.8
2.0
3.4
9 nC nC nC
Table 5.
Symbol
Switching times
Parameter Test conditions Min.
Typ.
Max.
Unit t d(on) Turn-on delay time 20 ns
V
DD
= 15V, I
D
= 3A, t r
Rise time 25 ns
R
G
= 4.7
Ω,
V
GS
= 2.5V
t d(off) t f
Turn-off delay time 32 ns
Obsolete Product(s) - Obsolete Product(s)
4/13
STC6NF30V Electrical characteristics
Table 6.
Symbol
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Test conditions
I
SD
= 6A, V
GS
= 0
I
SD
= 6A, di/dt = 100A/µs,
V
DD
= 15V, T
J
= 150°C
Figure 16 on page 9
Min.
Typ.
Max Unit
6 A
24 A
1.2
25
21
1.7
V ns
µC
A
Obsolete Product(s) - Obsolete Product(s)
5/13
Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STC6NF30V
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
Obsolete Product(s) - Obsolete Product(s)
6/13
STC6NF30V Electrical characteristics
Figure 7.
Gate charge vs. gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
Figure 12.
Normalized breakdown voltage temperature
Obsolete Product(s) - Obsolete Product(s)
7/13
Electrical characteristics
Figure 13.
Thermal resistance and max power
STC6NF30V
Obsolete Product(s) - Obsolete Product(s)
8/13
STC6NF30V
3 Test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Obsolete Product(s) - Obsolete Product(s)
9/13
Package mechanical data
4 Package mechanical data
STC6NF30V
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Obsolete Product(s) - Obsolete Product(s)
10/13
STC6NF30V Package mechanical data
Obsolete Product(s) - Obsolete Product(s)
11/13
Revision history STC6NF30V
Table 7.
Date
Revision history
Revision
21-Jun-2004
03-Aug-2006
01-Feb-2007
2
3
4
Changes
Complete document
The document has been reformatted, SOA updated
Typo mistake on first page
Obsolete Product(s) - Obsolete Product(s)
12/13
STC6NF30V
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
13/13
