STN2NF10
N-channel 100V - 0.23
Ω
- 2.4A - SOT-223
STripFET™ II Power MOSFET
Features
Type
STN2NF10
V
DSS
100V
R
DS(on)
< 0.26
Ω
I
D
2.4A
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Application
■ Switching application
– DC-DC converters
2
1
2
3
SOT-223
Internal schematic diagram
Order code
Part number
STN2NF10
Marking
N2NF10
Package
SOT-223
Packaging
Tape & reel
April 2007 Rev 6 1/13 www.st.com
13
3
4
5
1
2
Contents
Contents
STN2NF10
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STN2NF10 Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
V
DS
V
GS
I
D
I
D
I
DM
(1)
Drain-source voltage (V
Gate-source voltage
Drain current (pulsed)
GS
=0)
Drain current (continuous) at T
C
Drain current (continuous) at T
C
= 25°C
= 100°C
Derating factor
P
TOT
(2)
E
AS
(3) dv/dt
(4)
Total dissipation at T
C
= 25°C
Single pulse avalanche energy
Peak diode recovery voltage slope
T j
T stg
Operating junction temperature
Storage temperature
1.
Pulse width limited by safe operating area
2.
This value is rated according to Rthj-amb, t < 10sec
3.
I
AS
= 2.4A, V
DD
= 30V, Rg=4.7
Ω
, starting Tj = 25°C
4.
I
SD
< 6A, di/dt < 500A/µs, V
DD
= 80% V
(BR)DSS
Table 2.
Symbol
Thermal data
Parameter
Rthj-amb
(1) Thermal resistance junction-amb
Rthj-amb
(2) Thermal resistance junction-amb
1.
When mounted on 1inch² FR-4 board, 2 oz. Cu, (t < 10sec)
2.
When mounted on 1inch² FR-4 board, 2 oz. Cu, (t >10sec)
Value
100
± 20
2.4
1.5
17
0.026
3.3
200
30
-55 to 150
Value
38
62.5
Unit
A
A
V
V
A
W/°C
W mJ
V/ns
°C
Unit
°C/W
°C/W
3/13
Electrical characteristics STN2NF10
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol Parameter
V
(BR)DSS
Drain-source breakdown voltage
Test conditions
I
D
= 250µA, V
GS
= 0
I
DSS
Zero gate voltage drain current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc=125°C
V
DS
= 30V, Tc=125°C
I
GSS
V
GS(th)
R
DS(on)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on resistance
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 1.2A
Min.
Typ.
Max.
Unit
100
2
1
10
1
4
0.23
0.26
V
V
Ω
µA
µA
µA
±100 nA
Table 4.
Symbol g fs
C iss
C oss
C rss
Q g
Q gs
Q gd
Dynamic
Parameter Test conditions
Forward transconductance V
DS
=15V, I
D
=1.2A
Input capacitance
Output capacitance
Reverse transfer capacitance
V
DS
=25V, f=1MHz, V
GS
=0
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=80V, I
D
= 6A
V
GS
=10V
(see Figure 15)
Min.
Typ.
Max.
Unit
2.5
S
280
45
20 pF pF pF
10
2.5
4
14 nC nC nC
4/13
STN2NF10 Electrical characteristics
Table 5.
Symbol
Switching times
Parameter t d(on) t r
Turn-on delay time
Rise time t d(off) t f
Turn-off delay time
Fall time
Test conditions
V
DD
=50V, I
D
= 2.4A
V
GS
=10V, R
G
=4.7
Ω
(see Figure 14)
V
DD
=50V, I
D
= 2.4A
V
GS
=10V, R
G
=4.7
Ω
(see Figure 14)
Min.
Typ.
Max.
Unit
6
10 ns ns
20
3 ns ns
Table 6.
Symbol
Source drain diode
Parameter Test conditions
I
SD
I
SDM
(1)
V
SD
(2) t rr
Q rr
I
RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
1.
Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
I
SD
= 2.4A, V
GS
=0
I
SD
= 6A, V
DD
=10V di/dt=100A/µs,Tj=150°C
(see Figure 19)
Min.
Typ.
Max Unit
70
175
5
2.4
17
1.2
A
A
V ns nC
A
5/13
Electrical characteristics
Figure 1.
Safe operating area Figure 2.
Thermal impedance
STN2NF10
Figure 3.
Output characteristics Figure 4.
Transfer characteristics
Figure 5.
Transconductance Figure 6.
Static drain-source on resistance
6/13
STN2NF10
Figure 7.
Gate charge vs. gate-source voltage
Electrical characteristics
Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10.
Normalized on resistance vs. temperature
Figure 11.
Source-drain diode forward characteristics
Figure 12.
Normalized BV
DSS
vs. temperature
7/13
Electrical characteristics
Figure 13.
Max drain current vs. temperature
STN2NF10
8/13
STN2NF10
3 Test circuit
Figure 14. Switching times test circuit for resistive load
Figure 15. Gate charge test circuit
Test circuit
Figure 16. Test circuit for inductive load switching and diode recovery times
Figure 17. Unclamped inductive load test circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
9/13
Package mechanical data
4 Package mechanical data
STN2NF10
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/13
STN2NF10 Package mechanical data
DIM.
e1
E
D e
B1 c
A
B
H
V
A1
MIN.
0.60
2.90
0.24
6.30
3.30
6.70
2.30
4.60
3.50
7.00
0.70
3.00
0.26
6.50
SOT-223 MECHANICAL DATA mm
TYP.
MIN.
MAX.
1.80
0.80
3.10
0.32
6.70
0.024
0.114
0.009
0.248
3.70
7.30
10 o
0.130
0.264
0.02
inch
TYP.
0.090
0.181
0.138
0.276
0.027
0.118
0.010
0.256
MAX.
0.071
0.031
0.122
0.013
0.264
0.146
0.287
10 o
P008B
11/13
Revision history
Table 7.
Date
Revision history
Revision
14-Sep-2006
29-Mar-2007
04-Apr-2007
4
5
6
Changes
The document has been reformatted
Figure 1 has been updated
New test condition for I
DSS
on
Table 3
STN2NF10
12/13
STN2NF10
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
13/13
